• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2022.10a
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• pp.115-117
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• 2022

The electrical characteristics of the monolithic 3-dimensional static random access memory consisting of a feedback field-effect transistor (M3D-SRAM-FBFET) was investigated using technology computer-aided design (TCAD). The N-type FBFET and N-type MOSFET are designed with fully depleted silicon on insulator (FDSOI), and those are located at bottom and top tiers, respectively. For the M3D-SRAM-FBFET, as the supply voltage decreased from 1.9 V to 1.6 V, the reading on-current decreased approximately 10 times.

• Journal of Internet Computing and Services
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• v.21 no.2
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• pp.99-108
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• 2020

In this paper, we analyze the most suitable RA method among PAMA, DAMA, and RA classified by the multiple access method of satellite communication in the rapidly changing traffic environment according to the emergency and tactical situation. It suggests an alternative to improve the limit of output degradation. Based on the CRDSA protocol selected as the standard of DVB-RCS2 among the current satellite communication methods, CRDSA2R (Contention) maintains an optimal RA channel environment by checking the limitations in an environment where packet volume is rapidly increasing and observing channel load and channel conditions. We propose a Resolution Diversity Slotted ALOHA with Adaptive Random Access.

• ETRI Journal
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• v.39 no.4
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• pp.546-557
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• 2017

In a long term evolution-advanced (LTE-A) system, the traffic overload of machine type communication devices is a challenge because too many devices attempt to access a base station (BS) simultaneously in a short period of time. We discuss the challenge of the gap between the theoretical maximum throughput and the actual throughput. A gap occurs when the BS cannot change the number of preambles for a random access channel (RACH) until multiple numbers of RACHs are completed. In addition, a preamble partition approach is proposed in this paper that uses two groups of preambles to reduce this gap. A performance evaluation shows that the proposed approach increases the average throughput. For 100,000 devices in a cell, the throughput is increased by 29.7% to 114.4% and 23.0% to 91.3% with uniform and Beta-distributed arrivals of devices, respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.1
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• pp.31-38
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• 2016

A novel self-reference sense amplifier with parallel reading during writing operation is proposed. Read access time is improved compared to conventional self-reference scheme with fast operation speed by reducing operation steps to 1 for read operation cycle using parallel reading scheme, while large sense margin competitive to conventional destructive scheme is obtained by using self-reference scheme. The simulation was performed using standard $0.18{\mu}m$ CMOS process. The proposed self-reference sense amplifier improved not only the operation speed of less than 20 ns which is comparable to non-destructive sense amplifier, but also sense margin over 150 mV which is larger than conventional sensing schemes. The proposed scheme is expected to be very helpful for engineers for developing MRAM technology.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.26 no.11B
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• pp.1583-1594
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• 2001

In this paper, the transmission structure and procedure of a random access channel for the IMT-2000 satellite radio specification are presented. The proposed random access method has much commonality with that of the 3GPP FD specification which is a terrestrial radio interface of IMT-2000. The proposed method was designed by considering characteristics of satellite link as we71 as the commonality with the terrestrial component. A preamble consists of sub-preamble repetition and a message is transmitted along with the preamble successively. The propose method has fast indication of preamble acquisition by physical layer. The proposed method has been included in the SAT-CDMA which is a radio transmission technology Proposed by TTA, KOREA and approved as a satellite radio interface at ITU-R. Additionally, in this Paper the signaling delay for the proposed random access channel will be analyzed and it will be compared to that of the random access methods using a conventional ALOHA procedure and the 3GPP procedure in aspect of the signaling delay. When the SAT-CDMA satellite constellation at the height of about 1600 km is considered, the delay of the proposed method was estimated to 100 ms less than that of the conventional ALOHA. This delay difference increases with 7he number of retransmissions. The delay is reduced by 30 ms, compared with the 3GPP method.

• Journal of Korea Multimedia Society
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• v.2 no.1
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• pp.47-58
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• 1999

In this paper, we design the radio interface protocols of wideband Wireless Local Loop(WLL) that uses wideband Code Division Multiple Access(CDMA), and propose the random access procedures on access channel and analyze the performance of the channel. The structure of radio interface protocols are designed by three modular parts to meet the requirements of IMT-2000 : radio resource controlling part that depends on the radio resources, connection controlling part that is independent of the radio resources, and application part that supports the interface between different parts and user terminals. In addition, we propose the random access procedures on access channel and analyze the performance of the channel. We assume that both near-far effect and shadow fading can be compensated by open loop power control. We observe that the number of access probes(delay) depend on the initial mobile transmission power and power increment, and the poor estimation of initial mobile transmission power might increase the average number of access probes.

• Transactions on Electrical and Electronic Materials
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• v.12 no.6
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• pp.258-261
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• 2011

A ferroelectric $(Bi,La)_4Ti_3O_{12}$ (BLT) thin film fabricated by the pulsed-DC sputtering method was evaluated on a cell structure to check its compatibility to high density ferroelectric random access memory (FeRAM) devices. The BLT composition in the sputtering target was $Bi_{4.8}La_{1.0}Ti_{3.0}O_{12}$. Firstly, a BLT film was deposited on a buried Pt/$IrO_x$/Ir bottom electrode stack with W-plug connected to the transistor in a lower place. Then, the film was finally crystallized at $700^{\circ}C$ for 30 seconds in oxygen ambient. The annealed BLT layer was found to have randomly oriented and small ellipsoidal-shaped grains (long direction: ~100 nm, short direction: ~20 nm). The small and uniform-sized grains with random orientations were considered to be suitable for high density FeRAM devices.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.11C
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• pp.1158-1163
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• 2002

In this paper it is focused on the relation between CLR (Cell Loss Ratio) and blocking probability, GoS(Grade of Services) parameters in the wireless ATM (Asynchronous Transfer Mode) access network which consists of access node and wireless channel. Traffic model of wireless ATM access network is based on the cell scale, burst scale and call connection level. The CLR equation due to buffer overflow for wireless access node is derived for CBR (Constant Bit Rate) traffic. The CLR equation due to random bit errors and burst errors for wireless channel is derived. Using the CLR equation for both access node and wireless channel, the CLR equation of wireless ATM access network is derived. The relation between access network CLR and blocking probability is analyzed for CBR traffic.

• Journal of Broadcast Engineering
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• v.16 no.4
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• pp.624-634
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• 2011

Recently, the JCT-VC is developing the next generation video coding standard that is called HEVC. HEVC has adopted many coding technologies increasing coding efficiency. For chroma interpolation, DCT-based interpolation filter showing better performance than the linear filter in H.264/AVC was adopted in HEVC. In this paper, a combined filter that utilizes the FIR filter and the linear filter in H.264/AVC is proposed to increase coding efficiency. When the proposed method is compared with DCT-based interpolation filter, the experimental results for various sequences show that the average BD-rate improvements on chroma U and V components are 0.9% and 1.1%, respectively, in the high efficiency case of random access structure, those on U and V components are 1.1% and 1.1%, respectively, in the low complexity case of random access structure, those on U and V components are 0.9% and 1.4%, respectively, in the high efficiency case of low delay structure, and those on U and V components are 1.8% and 1.8%, respectively, in the low complexity case of low delay structure.

• Korean Journal of Materials Research
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• v.34 no.3
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• pp.152-162
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• 2024

In this study, we introduce a novel TiN/Ag embedded TiO₂/FTO resistive random-access memory (RRAM) device. This distinctive device was fabricated using an environmentally sustainable, solution-based thin film manufacturing process. Utilizing the peroxo titanium complex (PTC) method, we successfully incorporated Ag precursors into the device architecture, markedly enhancing its performance. This innovative approach effectively mitigates the random filament formation typically observed in RRAM devices, and leverages the seed effect to guide filament growth. As a result, the device demonstrates switching behavior at substantially reduced voltage and current levels, heralding a new era of low-power RRAM operation. The changes occurring within the insulator depending on Ag contents were confirmed by X-ray photoelectron spectroscopy (XPS) analysis. Additionally, we confirmed the correlation between Ag and oxygen vacancies (V_o). The current-voltage (I-V) curves obtained suggest that as the Ag content increases there is a change in the operating mechanism, from the space charge limited conduction (SCLC) model to ionic conduction mechanism. We propose a new filament model based on changes in filament configuration and the change in conduction mechanisms. Further, we propose a novel filament model that encapsulates this shift in conduction behavior. This model illustrates how introducing Ag alters the filament configuration within the device, leading to a more efficient and controlled resistive switching process.