• 한국세라믹학회지
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• 제43권11호
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• pp.688-692
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• 2006

Ferroelectric lanthanides-substituted $Bi_4Ti_3O_{12}$ $(Bi_{4-x}Ln_xTi_3O_{12}, BLnT)$ thin films approximately 200 nm in thickness were deposited by metal organic chemical vapor deposition onto Pt(111)/Ti/SiO$_2$/Si(100) substrates. Many researchers reported that the lanthanides substitution for Bi in the pseudo-perovskite layer caused the distortion of TiO$_6$ octahedron in the a-b plane accompanied with a shift of the octahedron along the a-axis. In this study, the effect of lanthanides (Ln=Pr, Eu, Gd, Dy)-substitution and crystallization temperature on their ferroelectric properties of bismuth titanate $(Bi_4Ti_3O_{12}, BIT)$ thin films were investigated. As BLnT thin films were substituted to lanthanide elements (Pr, Eu, Gd, Dy) with a smaller ionic radius, the remnant polarization (2P$_r$) values had a tendency to increase and made an exception of the Eu-substituted case because $Bi_{4-x}Eu_xTi_3O_{12}$ (BET) thin films had the smaller grain sizes than the others. In this study, we confirmed that better ferroelectric properties can be expected for films composed of larger grains in bismuth layered peroskite materials. The crystallinity of the thin films was improved and the average grain size increased as the crystallization temperature,increased from 600 to 720$^{\circ}C$. Moreover, the BLnT thin film capacitor is characterized by well-saturated polarization-electric field (P-E) curves with an increase in annealing temperature. The BLnT thin films exhibited no significant degradation of switching charge for at least up to $1.0\times10^{11}$ switching cycles at a frequency of 1 MHz. From these results, we can suggest that the BLnT thin films are the suitable dielectric materials for ferroelectric random access memory applications.

• 한국진공학회지
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• 제9권2호
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• pp.136-143
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• 2000

RF magnetron sputtering법으로 $SrBi_2Ta_2O_9$ (SBT)박막을 상온에서 p-type Si(100) 기판위에 증착하여 DRO 강유전체 메모리(destructive read out ferroelectric random access memory)에 사용되는 강유전체막으로 Pt/SBT/Pt/Ti/$SiO_2$/Si (MFM)구조의 응용가능성을 확인하였다. 구조적인 특징들이 열처리 시간의 변화와 Ar/$O_2$의 가스 유량비의 변화에 따라서 XRD(x-ray diffractometer)에 의해 관찰되었으며 표면 특성은 FE-SEM(field emission scanning electron microscopy)에 의해서 관찰하고 박막의 전기적 특성들은 P-V(polarization-voltage measurement)와 I-V(current-voltage measurement)를 사용하여 관찰하였다. 스퍼터링 증착시 Ar/$O_2$의 가스 유량비는 1:4에서 4:1까지 변화 시켰고 SBT박막은 상온에서 증착시켰다. XRD 측정시 박막들은 SBT의 (105), (110) peak들을 나타내었다. 상온에서 증착시킨 박막은 1시간, 2시간 동안 산소 분위기에서 $800^{\circ}C$ 열처리를 하여 결정화 시켰다. SBT 박막의 P-V곡선은 이력 곡선의 모양을 갖추었으며 비대칭적인 강유전체 특성을 나타내었다. Ar/$O_2$ 가스유량비가 1 : 1, 2 : 1인 경우에 박막의 누설 전류밀도 값이 제일 좋았으며, 그 값은 3V 5V 7V에서 각각 $3.11\times10^{-8} \textrm{A/cm}^2$, $5\times10^{-8}\textrm{A/cm}^2$, $7\times10^{-8}\textrm{A/cm}^2$ 이었다. 열처리 시간을 2시간으로 증가시킨 후, 그들의 전기적 특성과 결정화특성이 개선됨을 확인하였다. AES 분석 및 EPMA분석으로 SBT박막의 깊이 분포 및 조성을 확인하였다.

• 산경연구논집
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• 제11권7호
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• pp.29-40
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• 2020

Purpose: In modern society, many urban problems are occurring, such as aging, hollowing out old city centers and polarization within cities. In this study, we intend to apply big data and machine learning methodologies to predict depression symptoms in the elderly population early on, thus contributing to solving the problem of elderly depression. Research design, data and methodology: Machine learning techniques used random forest and analyzed the correlation between CES-D10 and other variables, which are widely used worldwide, to estimate important variables. Dependent variables were set up as two variables that distinguish normal/depression from moderate/severe depression, and a total of 106 independent variables were included, including subjective health conditions, cognitive abilities, and daily life quality surveys, as well as the objective characteristics of the elderly as well as the subjective health, health, employment, household background, income, consumption, assets, subjective expectations, and quality of life surveys. Results: Studies have shown that satisfaction with residential areas and quality of life and cognitive ability scores have important effects in classifying elderly depression, satisfaction with living quality and economic conditions, and number of outpatient care in living areas and clinics have been important variables. In addition, the results of a random forest performance evaluation, the accuracy of classification model that classify whether elderly depression or not was 86.3%, the sensitivity 79.5%, and the specificity 93.3%. And the accuracy of classification model the degree of elderly depression was 86.1%, sensitivity 93.9% and specificity 74.7%. Conclusions: In this study, the important variables of the estimated predictive model were identified using the random forest technique and the study was conducted with a focus on the predictive performance itself. Although there are limitations in research, such as the lack of clear criteria for the classification of depression levels and the failure to reflect variables other than KLoSA data, it is expected that if additional variables are secured in the future and high-performance predictive models are estimated and utilized through various machine learning techniques, it will be able to consider ways to improve the quality of life of senior citizens through early detection of depression and thus help them make public policy decisions.

• 한국전자파학회논문지
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• 제15권4호
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• pp.428-435
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• 2004

최근 이동단말기의 급속한 보급과 발전에 의하여, 통상의 시가지에서의 전자파전파의 특성을 해명해야할 뿐만 아니라, 시가지, 산림, 계곡 등의 외부 공간과 실내 공간 등의 종래에는 전파불감지대로 불려오던 공간에 있어서도 안정적으로 통신을 이용할 수 있는 무선통신환경 개선의 중요성이 높게 요구되고 있다. 더욱이, 이동통신의 디지털화와 더불어 건물 등에 의한 반사에 의해서 생기는 멀티패스에 기인하는 수신펄스의 시간지연이 고속디지털통신의 장해가 되고 있다. 이러한 도심 시가지에 대한 전자파전파의 특성을 보다 정도 높게 추정하기 위해서는 건물 벽면의 구조 및 간판 등의 영향도 고려 대상으로 포함시킬 필요성이 있다. 본 연구에서는, 먼저 무선통신환경에서의 시가지, 산림, 해면, 빌딩 벽면 등의 문제를 규칙적 및 불규칙조면(random rough surface)에 의한 산란문제로 취급하여 그 특성을 상세히 파악하고자 한다. 실제 문제에 있어서도 간판과 같은 빌딩의 부착물, 창, 테라스 등과 같은 규칙적 벽면 구조 또는 불규칙적 벽면 구조를 가지고 있는 경우가 일반화되어 있는 실정이다. 따라서 본 논문에서는 FVTD(finite volume time domain)법을 적용하여 기초적인 자료 보완을 위하여 3분류에 의한, 즉 주기적 구조에 의한 산란 특성, 불규칙적 구조에 의한 산란 특성, 주기적 및 불규칙의 복합형구조에 의한 2차원 전파환경 모델들에 대한 산란 특성을 조사하였다. 특히 주기적 벽면구조에 대한 Bragg reflection의 영향을 조사하였다.

• 한국광학회지
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• 제31권5호
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• pp.218-222
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• 2020

본 연구에서는 편광 유지 광섬유 기반의 고출력 이터븀 첨가 광섬유 증폭기를 이용하여 고품질의 2 kW급 출력을 갖는 파장제어 빔 결합 레이저를 구현하였다. 파장제어 빔 결합을 위하여 광섬유 증폭기의 발진 파장은 각각 1062 nm, 1063 nm, 1064 nm, 1065 nm, 1066 nm로서 서로 다른 값을 갖는다. 협대역 광섬유 레이저 증폭 시 발생하는 유도 브릴루앙 산란 비선형 효과를 완화하기 위해 시드 광원은 유사이진난수 신호(pseudo-random bit sequence, PRBS)를 이용하여 위상 변조된 5 GHz의 협대역 선폭을 갖도록 하였으며 전송광섬유는 30 ㎛ 코어 크기를 가지는 대면적 편광 유지 광섬유를 이용하였다. 파장제어 빔 결합으로 얻은 레이저의 최대 출력은 2.3 kW이며 빔 품질(M²)은 1.74이었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.236-236
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• 2008

(Bi,La)$Ti_3O_{12}$(BLT) thin film is one of the most attractive materials for ferroelectric random access memory (FRAM) applications due to its some excellent properties such as high fatigue endurance, low processing temperature, and large remanent polarization [1-2]. The authors firstly investigated and reported the damascene process of chemical mechanical polishing (CMP) for BLT thin film capacitor on behalf of plasma etching process for fabrication of FRAM [3]. CMP process could prepare the BLT capacitors with the superior process efficiency to the plasma etching process without the well-known problems such as plasma damages and sloped sidewall, which was enough to apply to the fabrication of FRAM [2]. BLT-CMP characteristics showed the typical oxide-CMP characteristics which were related in both pressure and velocity according to Preston's equation and Hernandez's power law [2-4]. Good surface roughness was also obtained for the densification of multilevel memory structure by CMP process [3]. The well prepared BLT capacitors fabricated by CMP process should have the sufficient ferroelectric properties for FRAM; therefore, in this study the electrical properties of the BLT capacitor fabricated by CMP process were analyzed with the process parameters. Especially, the effects of CMP pressure, which had mainly affected the removal rate of BLT thin films [2], on the electrical properties were investigated. In order to check the influences of the pressure in eMP process on the ferroelectric properties of BLT thin films, the electrical test of the BLT capacitors was performed. The polarization-voltage (P-V) characteristics show a decreased the remanent polarization (Pr) value when CMP process was performed with the high pressure. The shape of the hysteresis loop is close to typical loop of BLT thin films in case of the specimen after CMP process with the pressures of 4.9 kPa; however, the shape of the hysteresis loop is not saturated due to high leakage current caused by structural and/or chemical damages in case of the specimen after CMP process with the pressures of 29.4 kPa. The leakage current density obtained with positive bias is one order lower than that with negative bias in case of 29.4 kPa, which was one or two order higher than in case of 4.9 kPa. The high pressure condition was not suitable for the damascene process of BLT thin films due to the defects in electrical properties although the better efficiency of process. by higher removal rate of BLT thin films was obtained with the high pressure of 29.4 kPa in the previous study [2].

• 한국전자파학회논문지
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• 제16권5호
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• pp.472-481
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• 2005

본 논문에서는 Pareto 유전자 알고리즘을 이용한 최적화기법을 적용하여 UHF 대역 내에서 동작하는 crooked wire 형태의 RFID 리더 안테나를 설계하였다. 최적화 과정은 안테나의 제한된 크기, 반사 손실 대역폭(VSWR<2), 원형 편파 대역폭(Axial Ratio<3 dB), 인식 영역이 실제 조건과 인식 영역에 부합하도록 수행하였다 최적화된 안테나들 중 표본 안테나를 제작하였으며, 리더 안테나 특성을 측정하여 시뮬레이션 결과와 비교 및 검증하였다. 안테나 동작원리를 안테나 선로에 유기된 전류를 분석하여 설명하였으며, 안테나의 구조적 민감도와 주요 설계 변수(critical design parameters)를 찾기 위해 랜덤 에러(random error) 방식을 안테나 본체의 선로가 꺾이는 부분에 적용한 후, 안테나 구조와 원형 편파 대역폭 및 안테나 반사 손실 대역폭 사이의 관계를 정량화 하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.574-577
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• 2002

In recent year, BLT$(Bi_{3.25}La_{0.75}Ti_3O_{12})$ has been one of promising substitute materials at the ferroelectric random access memory applications. We manufactured $(Bi_{3.25}La_{0.75}Ti_3O_{12})$ Target with a ceramic process. The BLT target was sintered at $1100^{\circ}C$ for 4 hours. Using RF magnetron sputtering, a deposited BLT thin films were estimated about ferroelectric property as a functions of post annealing time. The BLT thin films showed a promoted ferroelectric characteristics at the post annealied sample for 30 minutes. This sample exhibited the (117) preferred crystal orientation, current density of $2{\times}10^{-8}A/cm^2$, a remanent polarization of $10{\mu}C/cm^2$ and a coercive field of 62.1 KV/cm respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.570-573
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• 2002

Pb(Zr0.52Ti0.48)O3 (PZT) thin films were deposited on the Pt/Ti bottom electrode by rf magnetron sputtering method from target containing 5%, 25% and 50% Pb excess for applying ferroelectric random access memory (FRAM). PZT films were deposited at $300^{\circ}C$ and then they were crystallized by rapid thermal annealing (RTA) at $700^{\circ}C$. After RTA treatment, our results showed that all PZT films indicated perovskite polycrystalline structure with preferred orientation (110) and no pyrochlore phase was observed by X-ray diffraction (XRD) and by Scanning electron microscopy (SEM). A well-fabricated PZT film of excess Pb 25% capacitor showed a leakage current density in the order of $2.63{\times}10^{-7}A/cm^2$ at 100kV/cm, a remanent polarization of $3.385{\mu}C/cm^2$ and a coercive field of 41.32 kV/cm. The results showed that Pb excess of target affects to electrical properties of PZT thin film.

• 한국전기전자재료학회논문지
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• 제18권4호
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• pp.338-343
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• 2005

Pb(Zr,Ti)O₃[PZT] thin films were prepared on a highly (100) oriented LaNiO₃[LNO] and a randomly oriented LNO by sol-gel process. The PZT thin films on a highly (100) oriented LNO show a high (100) crystal orientation (F=100 ％), those on a randomly oriented LNO show a random crystal orientation (F=60 ％). All the PZT layer have a flat and dense microstructure with large columnar grains and their grain size are 25 nm. In the ferroelectric curves at electric field of 40 kV/cm, a highly (100) oriented PZT/LNO samples show coercive field, E/sub c/=10 kV/cm and remanent polarization, P/sub r/=14.5 μC/㎠, while a randomly oriented PZT/LNO sample show E/sub c/=10 kV/cm and P/sub r/=5.4 μC/㎠.