Phase-Change Properties of the Sb-doped $Ge_1Se_1Te_2$ thin films application for Phase-Change Random Access Memory
(상변화 메모리 응용을 위한 Sb을 첨가한 $Ge_1Se_1Te_2$ 박막의 상변화 특성)
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- Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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- 2007.06a
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- pp.156-157
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- 2007