• 제목/요약/키워드: raman microscopy

검색결과 426건 처리시간 0.034초

펄스 레이저 증착법에 의한 DLC 박막 제작 연구 (Study on the fabrication of DLC thin films by pulsed laser deposition)

  • 정영식;은동석;이상렬;정해석;박형호
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1997년도 추계학술대회 논문집 학회본부
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    • pp.285-287
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    • 1997
  • We have deposited hydrogen-free diamond-like carbon (DLC) films by pulsed laser deposition of graphite. Pulsed laser deposition (PLD) can be utilized to generate films with desired properties quite different from those of the starting material. Since DLC films grown by PLD using turbo pump are perpared without hydrogen, they have a higher density and a higher index of refraction than the hydrogenated DLC films. In this study, effects of the substrate temperature and laser energy density on the properties of DLC films were systematically investigated. The structure and properties of the films have been studied by scanning electron microscopy (SEM), Fourier Transform Infrared (FT-IR), X-ray diffraction (XRD), and Raman spectroscopy.

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Si Nanostructure on Graphene

  • Han, Yong;Kim, Heeseob;Hwang, Chan-Cuk;Lee, Hangil;Kim, Bongsoo;Kim, Ki-jeong
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.184.1-184.1
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    • 2014
  • Nanostructures on Graphene surface receive highly attraction for many applications ranging from sensing technologies to molecular electronics. Recently J. Jasuja et al. reported the electrical property tailoring and Raman enhancement by the implantation and growth of dendritic gold nanostructures on graphene derivatives [ACSNANO, 3, 2358, 2013] Here, we introduced Si vapor on the graphen to induce the nanostructure. The surface property change of graphene by controlling the amount of Si and the thickness of graphene were investigated using high resolution photoemission spectroscopy (HRPES), and atomic force microscopy (AFM). The Si nanostructures on graphene show the thickness dependency of graphene, and the size of Si nano-structure reached to 7 nm and 15 nm on the mono and the multilayered graphene after $30{\AA}$ Si evaporation.

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Investigations of Graphene Grown on Copper Substrates

  • Cho, Sangmo;Kang, Yura;Nam, Jungtae;Kim, Keun Soo;Hong, Suklyun
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.188.2-188.2
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    • 2014
  • Chemical vapor deposition (CVD) method is usually used to grow high-quality large area graphene. In the CVD process, copper is an especially important catalytic-substrate due to the fact that graphene films grown on Cu foils are predominantly one monolayer thick. In this study, we has grown graphene on several types of copper substrates: Cu foils and copper single crystal surfaces such as Cu(100) and Cu(111) are chosen. To investigate the differences between graphene grown on foils and single crystals, we use Raman spectroscopy, X-ray diffraction and atomic force microscopy. Details of the experimental results will be presented.

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External rf plasma treatment effect on multi-wall carbon nanotubes grown inside anodic alumina nanoholes at low deposition temperatures

  • Ahn, Kyoung-Soo;Kim, Jun-Sik;Kim, Eun-Kyu;Kim, Chae-Ok;Hong, Jin-Pyo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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    • pp.692-693
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    • 2002
  • Well-aligned multi-wall carbon nanotubes (MWNTs) were fabricated by utilizing a radio frequency plasma-enhanced chemical vapor deposition (rf-PECVD) system from Ni particles at the bottom of anodic alumina nanoholes (AAN). To remove the amorphous graphite layers on the AAN surface and to eliminate the protrusion of MWNT tips, the AAN surface with MWNTs were treated by external rf plasma source. As a result, the AAN surface almost became flat without having any protrusion of MWNT tips. The diameter, length of MWNTs and AAN were investigated by using a scanning electron microscopy (SEM). Raman spectroscopy was also used to characterize wall structure of the carbon nanotube. And the emission properties of the MWNTs were measured for the application of field emission display (FED) in near future.

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단층벽 탄소나노튜브의 고순도 정제에 관한 연구 (A study on high purification of single-walled carbon nanotubes)

  • 김종식;김관하;김창일
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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    • pp.122-123
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    • 2005
  • 단층벽 탄소나노튜브(Single-walled carbon nanotube)를 성장시키고 성장된 탄소나노튜브를 여러 단계의 여과과정이 필요 없는 단순한 정제과정을 통하여 비정질 탄소 찌꺼기, 촉매 금속 등의 불순물을 제거하였다. 성장 온도가 증가함에 따라 수율이 증가하고 불순물의 함유량이 적은 탄소나노튜브가 성장이 되었으며 전반적으로 0.41-2.0 nm의 균일한 직경을 가진 SWNT가 합성이 되었으며 정제 후 96% 이상의 순도를 가진 SWNT를 얻을 수 있었다. 전반적으로 실험결과에 대한 물질의 특성 은 field emission scanning electron microscopy (FESEM)와 X-ray diffraction (XRD) 그리고 Raman spectroscopy로 조사하였다.

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나노세공 보에마이트의 합성 및 그 특성평가 (Synthesis and Characterization of Nanoporous Boehmite)

  • 김호건;김태용
    • 한국분말재료학회지
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    • 제12권3호
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    • pp.220-224
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    • 2005
  • Boehmite (AlOOH) powder with uniform pore size and high specific surface area were synthesized via sol-gel method using metal salts, $Al_2(SO_4)_3$ and $NaAlO_2$. During these synthetic process, the effects of the aging time were investigated to determine the optimal synthetic conditions of boehmite. X-ray diffraction, BET, Raman/IR, and scanning electron microscopy techniques were used for the characterization of the powder. Boehmite gel synthesized at the first stage of the experimental procedure transformed to crystalline boehmite phase after aging for 6 hours. The specific surface area of the crystalline boehmite showed a maximum value, $350m^2/g$, at aging time of 72 hours. The pore size of the boehmite increased with increasing aging time and the boehmite with average pore diameter of 3.6 nm was obtained at aging time of 96 hours.

"Crystallized Quantum Dot (Ge)" in Dielectric Matrix Synthesised by Metallic Ion Implantation

  • 전준홍;최진영;박원웅;임상호;한승희
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.270-270
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    • 2010
  • 4족 반도체 원소 양자점들은 원소가 가지고 있는 반도체적 성질과, 양자점에서 나타나는 quantum confinements 적인 특성 때문에 전자재료나 광학적 분야, 특히 태양전지 분야에서 그 쓰임이 대두되고 있다. 이러한 4족 반도체 원소의 양자점들을 만들기 위한 여러 방법들이 시도되고 있는데, 그 중에서 특히 절연체 박막에 4족 반도체 원소의 양자점들을 만드는 방법에는 이온주입, PVD, 그리고 CVD 를 통한 multi-layer 증착후 열처리 과정을 반드시 포함하는 Stranski- krastanov 방법이 주로 사용되고 있다. 본 실험에서는 고체원소 이온주입이라는 방법을 통해 절연체 박막의 증착과 이온주입이 한 진공용기 내에서 연속공정으로 이루어 지면서, 별도의 열처리 과정 없이 결정화된 게르마늄 양자점을 만들어 보았다. 이는 (X-ray diffraction) XRD와 Raman spectroscopy로 결정화된 게르마늄을 확인할 수 있었으며, (X-ray photoelectron spectroscopy)XPS 데이터로도 순수한 게르마늄이 표면에서 깊이 방향으로 약 $1,000\;{\AA}$ 만큼 게르마늄 양자점들이 만들어 짐을 알 수 있었다. 마지막으로 (High resolution transmittance electron microscopy) HRTEM으로 그 양자점의 크기와 분포도 그리고 결정성을 알아 보았다.

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물리기상증착법으로 형성된 다이아몬드상 탄소 박막의 마찰 특성에 관한 연구

  • 박관우;문일도;나종주;김대은
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2004년도 춘계학술대회 논문요약집
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    • pp.141-141
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    • 2004
  • 다이아몬드상 탄소(diamond-like carbon, DLC) 박막은 명칭에 함축된 의미로 알 수 있듯이 다이아몬드와 유사한 특징을 지니고 있다. DLC 박막은 비정질(amorphous) 고상 탄소 박막으로 구조적으로 Sp$^1$, Sp$^2$, Sp$^3$의 결합들로 구성되어 있다. DLC 박막의 물성으로는 우수한 경도, 내마모성, 낮은 마찰계수, 화학적 안정성 그리고 적외선(IR) 영역에서의 높은 투과율 등이 있다. 현재 DLC 박막은 앞서 열거된 물성들의 장점을 활용하여 다양한 산업분야에서 활발히 응용되고 있다.(중략)

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Growth and Structural Characterization of Single Layer Dichalcogenide $MoS_2$

  • Hwang, Jae-Seok;Kang, Dae-Joon
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.575-575
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    • 2012
  • Synthesis of novel two dimensional materials has gained tremendous attention recently as they are considered as alternative materials for replacing graphene that suffers from a lack of bandgap, a property that is essential for many applications. Single layer molybdenum disulfide ($MoS_2$) has a direct bandgap (1.8eV) that is promising for use in next-generation optoelectronics and energy harvesting devices. We have successfully grown high quality single layer $MoS_2$ by a facile vapor-solid transport route. As-grown single layer $MoS_2$ was carefully characterized by using X-ray diffraction, Raman spectroscopy, field emission scanning electron microscopy and electrical transport measurement. The results indicate that a high quality single layer $MoS_2$ can be successfully grown on silicon substrate. This may open up great opportunities for the exploration of novel nanoelectronic devices.

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Morphology and Thermal Oxidation Behavior of Graphene Supported on Atomically Flat Mica Substrates

  • 고택영;심지혜;류순민
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.459-459
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    • 2011
  • Graphene has many fascinating material properties such as high electron mobility, high optical transparency, excellent thermal conductivity, superior Young's modulus, etc. Several studies have recently found that single-layer graphene is chemically more reactive than few-layer graphene when supported on silicon dioxide substrates with sub-nm roughness. In this study, we have investigated the influence of substrates on chemical reactivity of graphene. Morphology and thermal oxidation behavior of graphene on atomically flat mica substrates were studied by atomic force microscopy (AFM) and Raman spectroscopy compared to graphene on SiO2/Si substrates. Notably, oxidation of single-layer graphene proceeds more slowly on mica than SiO2/Si. Detailed analysis led to a conclusion that deformation along the out-of-plane direction enhances reactivity of graphene.

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