• 제목/요약/키워드: ram

검색결과 3,247건 처리시간 0.032초

압력실의 크기와 운전 조건에 따른 수격펌프의 성능에 대한 실험적 고찰 (Experimental Study on the Effect of Air Chamber Size and Operation Parameters on the Performance of a Hydraulic Ram Pump)

  • 은골 에농진 에봉 죠오지;홍성구
    • 한국농공학회논문집
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    • 제61권4호
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    • pp.55-61
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    • 2019
  • Motor pumps cannot be used in those areas where electricity is not accessible such as remote rural areas in many African countries. Hydraulic ram pump is one of the solutions for supplying water for irrigation or domestic uses. The hydraulic ram pumps are working based on the water hammer effect for pumping without external power or electricity. This study was conducted to investigate the effect of air chamber volume and operation parameters on the performance of the hydraulic ram pump which was assembled with common plumbing parts. The experimental results showed the volume of the air chamber did not affect the performance such as discharge rate and head. When drive heights were 1.7 and 2.35 m, the maximum discharge heads were up to 7 m and 10 m, respectively. When the air chamber volume was 1 L, discharge rates were 0.23 and 2.12 L/min under the drive heights of 1.7 and 2.35 m, respectively. The average energy efficiency of the hydraulic ram pump assembled in this study was about 60% for all the experimental conditions.

ISM truncation due to ram pressure stripping: Comparisons of Theoretical Predictions and Observations

  • Lee, Seona;Sheen, Yun-Kyeong;Yoon, Hyein;Chung, Aeree;Jaffe, Yara
    • 천문학회보
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    • 제44권1호
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    • pp.77.1-77.1
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    • 2019
  • It has been proposed by Gunn & Gott (1972) that galaxies may lose their interstellar gas by ram pressure due to the dense intra-cluster medium while falling to the cluster potential. The observational evidence for this process, which is known as ram pressure stripping, is increasing, and it is believed to be one of the key environmental effects that can dramatically change the star formation activity of galaxies and hence their evolution. Intriguingly however, some cases with clear signs of ram pressure stripping are found in the environment which betrays our expectations (e.g. large clustercentric distances), and our understandings to the detailed working principle behind ram pressure stripping seem to be still lacking. As one of the ways to gain more theoretical insights into the conditions for ram pressure stripping process, we have been comparing the gas truncation radius which is predicted based on the simple Gunn & Gott's prescription with what is actually observed in a sample of carefully selected Virgo galaxies. In this work, we present the results of our comparisons between the theoretically predicted truncation radius and the observationally measured truncation radius for individual galaxies in the sample and discuss which additional conditions are needed in order to fully understand the observations.

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Lack of any Association of the CTLA-4 +49 G/A Polymorphism with Breast Cancer Risk in a North Indian Population

  • Minhas, Sachin;Bhalla, Sunita;Shokeen, Yogender;Jauhri, Mayank;Saxena, Renu;Verma, Ishwar Chandra;Aggarwal, Shyam
    • Asian Pacific Journal of Cancer Prevention
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    • 제15권5호
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    • pp.2035-2038
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    • 2014
  • Cytotoxic T-lymphocyte antigen 4 (CTLA-4) is an important protein involved in the regulation of the immune system. The +49 G/A polymorphism is the only genetic variation in the CTLA-4 gene that causes an amino acid change in the resulting protein. It is therefore the most extensively studied polymorphism among all CTLA-4 genetic variants and contributions to increasing the likelihood of developing cancer are well known in various populations, especially Asians. However, there have hiterto been no data with respect to the effect of this polymorphism on breast cancer susceptibility in our North Indian population. We therefore assayed genomic DNA of 250 breast cancer subjects and an equal number of age-, sex- and ethnicity-matched healthy controls for the CTLA-4 +49 G/A polymorphism but no significant differences in either the gene or allele frequency were found. Thus the CTLA-4 +49 G/A polymorphism may be associated with breast cancer in other Asians, but it appears to have no such effect in North Indians. The study also highlights the importance of conducting genetic association studies in different ethnic populations.

Improved Resistive Characteristic of Ti-doped AlN-based ReRAM

  • 권정용;김희동;윤민주;김태근
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.306.1-306.1
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    • 2014
  • 정보화 시대의 발전에 따라 점점 더 많은 정보를 더욱 빠르게 처리할 수 있는 기기들이 요구되고 있다. 메모리는 그 중에서 핵심적인 부품으로써 소자의 고집적화와 고속화가 계속 진행되면서 기존의 메모리 소자들은 집적화에서 그 한계에 도달하고 있다. 기존 소자들의 집적화의 한계를 극복하기 위하여 새로운 비휘발성 메모리 소자들이 제안되었다. 그 중 resistive switching random access memory(ReRAM)은 저항의 변화특성을 사용하는 메모리로 간단한 구조를 가지고 있기 때문에 집적화에 유리하다는 장점을 가지고 있다. 그 외에도 빠른 동작 속도와 낮은 전압에서의 동작이 가능하여 차세대 메모리로써 각광받고 있는 추세이다. 본 연구실에서는 이미 nitride 물질을 기반으로 한 여러 ReRAM 소자들을 제안해 왔다. 그 중 AlN-based ReRAM 소자는 빠른 동작 속도와 좋은 내구성을 보인 바 있다. 하지만 상업화를 위해서 해결해야 할 문제점들이 아직 존재하고 있다. 대표적으로 소자의 배열에서 각 소자의 균일한 동작이 보증되어야 하기 때문에 소자의 셋/리셋 전압의 산포를 줄이고 동작 전류 레벨을 낮추어야 할 필요성이 존재한다. 이러한 ReRAM의 이슈를 해결하기 위해, 본 실험에서는 기존의 AlN-based ReRAM 소자에 Ti를 도핑 방법을 이용하여 소자의 동작 전압 및 전류의 산포를 줄이기 위한 연구를 진행 하였다. 본 실험은 co-sputtering 방법을 이용하여 Ti가 도핑된 AlN을 저항변화 물질로 사용하여 그 특성을 살펴보았다. Ti의 도핑 효과로 소자의 신뢰성 향상 및 동작 전압의 감소 등의 효과를 얻을 수 있었다. 이는 nitride 기반 물질에서 Ti dopant에 의해 형성된 TiN의 효과로 설명된다. TiN는 metallic한 특성을 지니고 있기에 저항변화물질 내에서 일종의 metallic particle의 역할을 수행할 수 있다. 따라서 conducting path의 형성과정에서 이러한 particle 들이 전계를 유도하여 좀 더 균일한 set/reset 특성을 나타내게 된다.

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Improved Uniformity in Resistive Switching Characteristics of GeSe Thin Film by Ag Nanocrystals

  • Park, Ye-Na;Shin, Tae-Jun;Lee, Hyun-Jin;Lee, Ji-Soo;Jeong, Yong-Ki;Ahn, So-Hyun;Lee, On-You;Kim, Jang-Han;Nam, Ki-Hyun;Chung, Hong-Bay
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.237.2-237.2
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    • 2013
  • ReRAM cell, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of conductive filament in a solid electrolyte [1,2]. Especially, Chalcogenide-based ReRAM have become a promising candidate due to the simple structure, high density and low power operation than other types of ReRAM but the uniformity of switching parameter is undesirable. It is because diffusion of ions from anode to cathode in solid electrolyte layer is random [3]. That is to say, the formation of conductive filament is not go through the same paths in each switching cycle which is one of the major obstacles for performance improvement of ReRAM devices. Therefore, to control of nonuniform conductive filament formation is a key point to achieve a high performance ReRAM. In this paper, we demonstrated the enhanced repeatable bipolar resistive switching memory characteristics by spreading the Ag nanocrystals (Ag NCs) on amorphous GeSe layer compared to the conventional Ag/GeSe/Pt structure without Ag NCs. The Ag NCs and Ag top electrode act as a metal supply source of our devices. Excellent resistive switching memory characteristics were obtained and improvement of voltage distribution was achieved from the Al/Ag NCs/GeSe/Pt structure. At the same time, a stable DC endurance (>100 cycles) and an excellent data retention (>104 sec) properties was found from the Al/Ag NCs/GeSe/ Pt structured ReRAMs.

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RAM기반 자바카드 인스톨러를 이용한 로딩속도 개선 (An Improvement in Loading Speed Using RAM-based Java Card Installer)

  • 진민식;최원호;이동욱;김한나;정민수;박규석
    • 한국멀티미디어학회논문지
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    • 제10권5호
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    • pp.604-611
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    • 2007
  • 자바카드는 스마트카드와 (U)SIM기술의 표준 기술로 받아들여지고 있으며, 그것은 하드웨어 독립성과 이를 통해 구현 가능한 어플리케이션의 사후발행기능으로 Native카드와 구별된다. 그러나 자바카드의 가장 큰 단점 중 하나는 하드웨어 자인의 제약과 자바 언어 자체에서 야기되는 늦은 실행 속도 문제이다. 본 논문에서는 카드 터미널 또는 SMS를 통한 어플리케이션 동적 다운로드시 속도를 개선하기 위해 논리주소를 물리주소로 바꾸는 Resolution작업에서 애플릿의 다운로드시 기존의 EEPROM 기반 심볼릭 참조를 EEPROM에 비해 약 100,000배 빠른 RAM에서의 직접참조가 가능한 자바카드 인스톨러를 설계 및 구현하였다. 실험을 통해 확인한 결과 제안된 Resolution_In_RAM기법이 적용된 자바카드 인스톨러를 통해 애플릿을 다운로드하면 EEPROM 기록 횟수가 37%, 다운로드 시간이 30% 이상 감소됨을 알 수 있었다.

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부체계의 임무 프로파일 및 운용 비율을 고려한 무기체계의 RAM 목표값 설정: A체계 사례 연구 (RAM Target Value Setting for a Defense System Using Subsystems' Mission Profiles and Utilization Rates: Case Study of System A)

  • 배인화;김상부;유재우;박우재;유은지;이민영;송기훈
    • 한국산업융합학회 논문집
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    • 제26권5호
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    • pp.885-894
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    • 2023
  • Setting RAM target value for a defense system plays a crucial role in the development and design phases and the production phase as well. It is apparent that the achieved RAM target value can help maximizing the combat capability of a defense system and improving its performance throughout the system's life cycle from acquisition phase to disposal. Usually a defense system operates according to its OMS/MP (Operational Mode Summary / Mission Profile) and it consists of several subsystems which are supposed to be operated at each utilization rate under its operating conditions and the mission profiles assigned. In this study, a method of setting RAM target value is proposed for a defense system that are composed of several independent subsystems considering their utilization rates and the mission profiles assigned. And the case study of applying the proposed method of setting RAM target value to system A is dealt with.