• ETRI Journal
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• 제20권2호
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• pp.231-240
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• 1998

We report, for the first time, the fabrication of vertically stacked InGaAs/GaAs quantum wires (QWRs) on V-grooved substrates by chemical beam epitaxy (CBE). To fabricate the vertically stacked QWRs structure, we have grown the GaAs resharpening barrier layers on V-grooves with (100)-(322) facet configuration instead of (100)-(111) base at 450 $^{\circ}C$. Under the conditions of low growth temperature, the growth rate of GaAs on the (322) sidewall is higher than that at the (100) bottom. Transmission electron microscopy verifies that the vertically stacked InGaAs QWRs were formed in sizes of about $200{\AA} {\times} 500{\sim}600 {\AA}$. Three distinct photoluminescence peaks related with side-quantum wells (QWLs), top-QWLs and QWRs were observed even at 200 K due to sufficient carrier and optical confinement. These results strongly suggest the existence of the quantized state in the vertically stacked InGaAs/GaAs QWRs grown by CBE.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.489-489
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• 2011

The effect of Si quantum dots for solar cell appications was investigated. The 5 ~ 10 nm Si nanoparticle was fabricated on p-type single and poly crystalline wafer by magnetron sputtering and laser irradiation process. Scanning electron microscopy (SEM), atomic force measurement (AFM) and transmission electron microscopy (TEM) images showed that the Si QDs array were clearly embedded in insulating layer ($SiO_2$). Photoluminesence (PL) measurements reliably exhibited bandgap transitions with every size of Si QDs. The photo-current measurements were showed different result with size of QD and number of superlattice.

• Bulletin of the Korean Chemical Society
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• 제29권9호
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• pp.1729-1731
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• 2008

Colloidal solutions of crystalline PbSe nanoparticles have been synthesized by hot solution chemical process using PbO in oleic acid and tributylphosphine (TBP) bonded selenium. The use of TBP as a capping agent along with oleic acid gives a very good yield (around 10% at 180 ${^{\circ}C}$) with an average diameter of particle of about < 6.6 nm. The effects of temperature on size and production yield of PbSe quantum dots are studied. Xray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM) and UV/VIS/NIR absorption spectroscopy were used to characterize the samples.

• ETRI Journal
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• 제26권5호
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• pp.475-480
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• 2004

Self-assembled InAs quantum dots (QDs) embedded in an InAlGaAs matrix were grown on an InP (001) using a solid-source molecular beam epitaxy and investigated using transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. TEM images indicated that the QD formation was strongly dependent on the growth behaviors of group III elements during the deposition of InAlGaAs barriers. We achieved a lasing operation of around 1.5 ${\mu}m$ at room temperature from uncoated QD lasers based on the InAlGaAs-InAlAs material system on the InP (001). The lasing wavelengths of the ridge-waveguide QD lasers were also dependent upon the cavity lengths due mainly to the gain required for the lasing operation.

• 반도체디스플레이기술학회지
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• 제21권3호
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• pp.114-118
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• 2022

The stabilized all-solid-state battery structure indicate a fundamental alternative to the development of next-generation energy storage devices. Existing liquid electrolyte structures severely limit battery stability, creating safety concerns due to the growth of Li dendrites during rapid charge/discharge cycles. In this study, a low-dimensional graphene quantum dot layer structure was applied to demonstrate stable operating characteristics based on Li+ ion conductivity and excellent electrochemical performance. Transmission electron microscopy analysis was performed to elucidate the microstructure at the interface. The low-dimensional structure of GQD-based solid electrolytes has provided an important strategy for stable scalable solid-state lithium battery applications at room temperature. This study indicates that the low-dimensional carbon structure of Li-GQDs can be an effective approach for the stabilization of solid-state Li matrix architectures.

• 한국재료학회지
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• 제12권4호
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• pp.296-303
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• 2002

For potential application to quantum mechanical devices, nano-composite thin films, consisting of GaAs quantum dots dispersed in SiO$_2$ glass matrix, were fabricated and studied in terms of structural, chemical, and optical properties. In order to form crystalline GaAs quantum dots at room temperature, uniformly dispersed in $SiO_2$matrix, the composite films were made to consist of alternating layers of GaAs and $SiO_2$in the manner of a superlattice using RF magnetron sputter deposition. Among different film samples, nominal thickness of an individual GaAs layer was varied with a total GaAs volume fraction fixed. From images of High Resolution Transmission Electron Microscopy (HRTEM), the formation of GaAs quantum dots on SiO$_2$was shown to depend on GaAs nominal thickness. GaAs deposits were crystalline and GaAs compound-like chemically according to HRTEM and XPS analysis, respectively. From measurement of optical absorbance using a spectrophotometer, absorption edges were determined and compared among composite films of varying GaAs nominal thicknesses. A progressively larger shift of absorption edge was noticed toward a blue wavelength with decreasing GaAs nominal thickness, i.e. quantum dots size. Band gaps of the composite films were also determined from Tauc plots as well as from PL measurements, displaying a linear decrease with increasing GaAs nominal thickness.

• International Journal of Internet, Broadcasting and Communication
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• 제4권2호
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• pp.22-27
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• 2012

The design characteristics of circular vertical-cavity surface-emitting lasers are studied by using a newly developed equivalent network. Optical parameters, such as the stop-band or the reflectivity of periodic mirrors and the resonance wavelength, are explored for the design of these structures. To evaluate the differential quantum efficiency and the threshold current density, a transverse resonance condition of modal transmission-line theory is also utilized. This approach dramatically reduces the computational time as well as gives an explicit insight to explore the optical characteristics of circular vertical-cavity surface-emitting lasers (VCSELs).

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 추계종합학술대회 논문집
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• pp.322-325
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• 1999

We report fiber guiding experiments on the Photonic Quantum Ring(PQR) laser diode. In the 1km transmission measurements, we find that the PQR performs much better than the VCSEL. This suggests that the PQR laser is very promising candidate for LAN-range optical data communications. On the other hand, we have also fabricated 8$\times$8 PQR laser arrays and measured spatial decays for free space properties without using any guiding optics, which showed about 1m distance of spectral angle sensing.

• 한국정보통신학회논문지
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• 제18권1호
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• pp.84-90
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• 2014

비밀통신의 발전은 아날로그 통신에서 디지털 통신으로 진보해 왔다. 디지털통신상의 비밀통신은 one-time pad의 안전성을 승계하여 주로 설계 되어 왔다. One-time pad의 안전성은 상호 보관하는 비밀키의 안전성에 기인하고 비밀키의 교환에 의한 상호 동기화가 가장 중요한 요소이다. 본 논문에서는 quantum cryptography system 중 BB84 알고리즘의 수학적 안전도를 살펴보고 이를 이용하여 양자 키 전송을 시행한다. 생성된 키는 개인의 각 단말에서 AES의 64번 라운드를 시행한 ciphertext을 상호 교환하는 One-time Pad 형 알고리즘을 제안한다.

• KSII Transactions on Internet and Information Systems (TIIS)
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• 제12권3호
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• pp.1083-1097
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• 2018

This paper presents a novel range-free localization algorithm based on quantum particle swarm optimization. The proposed algorithm is capable of estimating the distance between two non-neighboring sensors for multi-hop heterogeneous wireless sensor networks where all nodes' communication ranges are different. Firstly, we construct a new cumulative distribution function of expected hop progress for sensor nodes with different transmission capability. Then, the distance between any two nodes can be computed accurately and effectively by deriving the mathematical expectation of cumulative distribution function. Finally, quantum particle swarm optimization algorithm is used to improve the positioning accuracy. Simulation results show that the proposed algorithm is superior in the localization accuracy and efficiency when used in random and uniform placement of nodes for heterogeneous wireless sensor networks.