• Journal of Magnetics
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• v.15 no.1
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• pp.7-11
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• 2010

Spin-orbit coupling (SOC) is a source of strong spin dephasing in two- and three-dimensional semiconducting systems. We report that spin dephasing in a two-dimensional electron gas can be suppressed by introducing a quantum point contact. Surprisingly, this suppression was not limited to the vicinity of the contact but extended to the entire two-dimensional electron gas. This facilitates the electrical control of the spin degree of freedom in a two-dimensional electron gas through spin-orbit coupling.

• Journal of the Korean Vacuum Society
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• v.21 no.3
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• pp.151-157
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• 2012

The two dimensional electron gas system based on GaAs/$Al_xGa_{1-x}As$ heterostructure is widely used for fabricating quantum structures such as quantum dot, quantum point contact, electron interferometer and so on. However the conductance of the device is usually unstable due to the presence of random telegraph noise in the device. To overcome such problem, we have studied the effect of surface state on the stability of the device by altering the surface state of the device with oxygen plasma. The dramatic improvement of the device stability has been observed after cleaning the device surface with oxygen plasma (by 50 W~120 W plasma power) for 30 sec followed by etching in HCl : $H_2O$ (1 : 3) solution.

• Journal of the Korean Chemical Society
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• v.3 no.1
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• pp.3-8
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• 1954

Fowler obtained thermodynamic quantities assuming the theory which could be derived by representing the system with microcanonical ensemble, in order to introduce the temperature T of the system proper, he considered the combined systems which are composed of the system proper and another arbitrary system that is in thermal contact with the former, and represented the combined system by a microcanonical ensemble, here, he used the steepest descent method in his calculation. This Fowler's treatment is not only unsatisfactory at the point of theoretical view but also he could not make the formulation of free energy of Helmholtz's so that this formular was forced to be assumed. From the point of Quantum Statistical Mechanical view, the materially closed system which is in an equilibrium state with the temperature T is best represented by canonical ensemble. At the actual derivation of the distribution law and thermodynamic quantities, however, in order to avoid the difficulty of calculation Tolman proceeded his calculation either representing the system proper by the grand-canonical ensemble or adding a certain limitation.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.12
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• pp.89-100
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• 1997

This paper investigated a new type of low voltage threshold switch (LVTS). As distinguished from the many other types of electronic threshold switches, the LvTS is ; voltage controlled, occurs at low voltages ($V_{2}$ $O_{5}$lV devices. The average low threshold voltage < $V_{LVT}$>=218 mV (standard deviation =24mV~kT/q, where T=300K), and was independent of the device area (x100) and amorphous oxide occurred in an ~22.angs. thick interphase of the V/amorphous- $V_{2}$ $O_{5}$ contacts. At $V_{LVT}$ there was a transition from an initially low conductance (OFF) state into a succession of quantized states of higher conductance (ON). The OFF state was spatically homogeneous and dominated by tunneling into the interphase. The ON state conductances were consistent with the quantized conductances of ballistic transport through a one dimensional, quantum point contact. The temeprature dependence of $V_{LVT}$, and fit of the material parameters (dielectric function, barrier energy, conductivity) to the data, showed that transport in the OFF and ON states occurred in an interphase with the characteristics of, respectively, semiconducting and metallic V $O_{2}$. The experimental results suggest that the LVTS is likely to be observed in interphases produced by a critical event associated with an inelastic transfer of energy.rgy.y.rgy.

• Progress in Superconductivity
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• v.13 no.3
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• pp.139-145
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• 2012

Electric activity of cardiac muscles generates magnetic fields. Magnetocardiography (or MCG) technology, measuring these magnetic signals, can provide useful information for the diagnosis of heart diseases. It is already about 40 years ago that the first measurement of MCG signals was done by D. Cohen using SQUID (superconducting quantum interference device) sensor inside a magnetically shielded room. In the early period of MCG history, bulky point-contact RF-SQUID was used as the magnetic sensor. Thanks to the development of Nb-based Josephson junction technology in mid 1980s and new design of tightly-coupled DC-SQUID, low-noise SQUID sensors could be developed in late 1980s. In around 1990, several groups developed multi-channel MCG systems and started clinical study. However, it is quite recent years that the true usefulness of MCG was verified in clinical practice, for example, in the diagnosis of coronary artery disease. For the practical MCG system, technical elements of MCG system should be optimized in terms of performance, fabrication cost and operation cost. In this review, development history, technical issue, and future development direction of MCG technology are described.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.188.1-188.1
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• 2014

Aluminum is widely used as a material for electrode on silicon based devices. Especially, aluminum films are used as backside and front-side electrodes in silicon quantum dot (QD) solar cells. In this point, the diffusion of aluminum is very important for the enhancement of power conversion efficiency by improvement of contact property. Aluminum was deposited on a Si (100) wafer and a Si QD layer by ion beam sputter system with a DC ion gun. The Si QD layer was fabricated by $1100^{\circ}C$ annealing of the $SiO_2/SiO_1$ multilayer film grown by ion beam sputtering deposition. Cs ion beam with a low energy and a grazing incidence angle was used in SIMS depth profiling analysis to obtain high depth resolution. Diffusion behavior of aluminum in the Al/Si and Al/Si QD interfaces was investigated by secondary ion mass spectrometry (SIMS) as a function of heat treatment temperature. It was found that aluminum is diffused into Si substrate at $450^{\circ}C$. In this presentation, the effect of heat treatment temperature and Si nitride diffusion barrier on the diffusion of Al will be discussed.