• Title/Summary/Keyword: quantum optics

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Analysis of the Abnormal Voltage-Current Behaviors on Localized Carriers of InGaN/GaN Multiple Quantum well from Electron Blocking Layer

  • Nam, Giwoong;Kim, Byunggu;Park, Youngbin;Kim, Soaram;Kim, Jin Soo;Son, Jeong-Sik;Leem, Jae-Young
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.219-219
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    • 2013
  • The effect of an electron blocking layer (EBL) on V-I curves in GaN/InGaN multiple quantum well is investigated. For the first time, we found that curves were intersected at 3.012 V and analyzed the reason for intersection. The forward voltage in LEDs with an p-AlGaN EBL is larger than without p-AlGaN EBL at low injection current because the Mg doping efficiency for p-GaN layer was higher than that of p-AlGaN layer. However, the forward voltage in LEDs with an p-AlGaN EBL is smaller than without p-AlGaN EBL at high injection current because the carriers overflow from the active layer when injection current increases in LEDs without p-AlGaN EBL and in case of LED with p-AlGaN EBL, the carriers are blocked by EBL.

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Reducing Efficiency Droop in (In,Ga)N/GaN Light-emitting Diodes by Improving Current Spreading with Electron-blocking Layers of the Same Size as the n-pad

  • Pham, Quoc-Hung;Chen, Jyh-Chen;Nguyen, Huy-Bich
    • Current Optics and Photonics
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    • v.4 no.4
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    • pp.380-390
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    • 2020
  • In this study, the traditional electron-blocking layer (EBL) in (In,Ga)N/GaN light-emitting diodes is replaced by a circular EBL that is the same size as the n-pad. The three-dimensional (3D) nonlinear Poisson, drift-diffusion, and continuity equations are adopted to simulate current transport in the LED and its characteristics. The results indicate that the local carrier-density distribution obtained for the circular EBL design is more uniform than that for the traditional EBL design. This improves the uniformity of local radiative recombination and local internal quantum efficiency (IQE) at high injection levels, which leads to a higher lumped IQE and lower efficiency droop. With the circular EBL, the lumped IQE is higher in the outer active region and lower in the active region under the n-pad. Since most emissions from the active region under the n-pad are absorbed by the n-pad, obviously, an LED with a circular EBL will have a higher external quantum efficiency (EQE). The results also show that this LED works at lower applied voltages.

Periodically Poled BaTiO3: An Excellent Crystal for Terahertz Wave Generation by Cascaded Difference-frequency Generation

  • Li, Zhongyang;Yuan, Bin;Wang, Silei;Wang, Mengtao;Bing, Pibin
    • Current Optics and Photonics
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    • v.2 no.2
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    • pp.179-184
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    • 2018
  • Terahertz (THz) wave generation by periodically poled $BaTiO_3$ (PPBT) with a quasi-phase-matching (QPM) scheme based on cascaded difference-frequency generation (DFG) is theoretically analyzed. The cascaded DFG processes comprise cascaded Stokes and anti-Stokes processes. The calculated results indicate that the cascaded Stokes processes are stronger than the cascaded anti-Stokes processes. Compared to a noncascaded Stokes process, THz intensities from $20^{th}$-order cascaded Stokes processes increase by a factor of 30. THz waves with a maximum intensity of $0.37MW/mm^2$ can be generated by $20^{th}$-order cascaded DFG processes when the optical intensity is $10MW/mm^2$, corresponding to a quantum conversion efficiency of 1033%. The high quantum conversion efficiency of 1033% exceeds the Manley-Rowe limit, which indicates that PPBT is an excellent crystal for THz wave generation via cascaded DFG.

Electrical Properties and Defect States in ZnO Substrates Irradiated by MeV Electron-beam (고 에너지 전자빔 조사에 따른 ZnO 기판의 결함생성 및 전기적 특성 변화)

  • Lee, Dong-Uk;Song, Hoo-Young;Han, Dong-Seok;Kim, Seon-Pil;Kim, Eun-Kyu;Lee, Byung-Cheol
    • Journal of the Korean Vacuum Society
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    • v.19 no.3
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    • pp.199-205
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    • 2010
  • The electrical properties and defect states in ZnO substrates were studied during high-energy electron beam irradiations. 1 MeV and 2 MeV electron-beam with dose of $1{\times}10^{16}$ electrons/$cm^2$ were irradiated on Zn-surface of the sample. In the sample irradiated by 1 MeV, the leakage current was increased by electron-beam induced surface defects, while the enhancement of on/off property and the decrease of leakage current appeared in the 2 MeV irradiated sample. From the deep level transient spectroscopy measurements for these samples, it showed that the defect states with the activation energies of $E_c$-0.33 eV and $E_v$+0.8 eV are generated during the high energy electron-beam irradiation. Especially, it considered that the $E_c$-0.33 eV state related with O-vacancy affects to their electrical properties.

Optical Simulation Study of the Improvement of Color-rendering Characteristics of White Light-emitting Diodes by Using Red Quantum-dot Films (적색 양자점 필름을 이용한 백색 발광 다이오드의 연색성 개선에 대한 광학 시뮬레이션 연구)

  • Lee, Gi Jung;Hong, Seung Chan;Lee, Jung-Gyun;Ko, Jae-Hyeon
    • Korean Journal of Optics and Photonics
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    • v.32 no.4
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    • pp.163-171
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    • 2021
  • Conventional white light-emitting diodes (LEDs) for lighting applications consist of blue LEDs and yellow phosphors, the spectrum of which lacks deep red. To improve the color-rendering characteristics of white LEDs, a red quantum-dot film was applied to the diffuser plate of LED lighting. The mean free paths of the quantum dots and the concentration of the TiO2 particles in the diffuser plate were adjusted to optimize the optical structure of the lighting. The color-rendering index (CRI) was greater than 90 for most conditions, which demonstrates that adoption of the red quantum-dot film is an effective way for improving the color-rendering properties of conventional white LEDs. The angular dispersion of color coordinates could be removed by utilizing the optical cavity formed between the diffuser plate and the reflector on the bottom of the lighting, where multiple passages of the light through the quantum-dot film reduced the differences in optical path length depending on the viewing angle.

SNR Analysis for Practical Electro-Optical Camera System

  • Kim Youngsun;Kong Jong-Pil;Heo Haeng-Pal;Park Jong-Euk;Chang Young-Jun
    • Proceedings of the KSRS Conference
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    • 2005.10a
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    • pp.633-636
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    • 2005
  • An electro-optical camera system consists of many subsystems such as the optics, the detector, and the electronics and so on. They may create variations in the processed image that were not present original scene. The performance analysis of the electro-optical camera system is a mathematical construct that provides an optimum design through appropriate trade off analysis. The SNR(Signal to Noise Ratio) is one of the most important performance for the electro-optical camera system. The SNR analysis shown in this paper is performed based on the practical high resolution satellite camera design. For the purpose of the practical camera design, the analysis assumes that the defined radiance, which is calculated for the Korean peninsula, reached directly to the telescope entrance. In addition, the actual operation concept such as integration time and the normal operation altitude is assumed. This paper compares the SNR analysis results according to the various camera characteristics such as the optics, the detector, and the camera electronics. In detail, the optical characteristics can be split into the focal length, F#, transmittance, and so on. And the system responsivity, the quantum efficiency, the TDI stages, the quantization noise and the analogue noise can be used for the detector and the camera electronics characteristics. Finally this paper suggests the optimum design to apply the practical electro-optical system.

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Fourth-order interference between perpendicularly polarized beams with different intensities in a HOM interferometer (HOM 간섭계에서 세기가 다른 수직편광된 빔사이의 4차 간섭)

  • Kim, Heon-Oh;Kim, Tae-Soo;Ko, Jeon-Hoon
    • Korean Journal of Optics and Photonics
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    • v.14 no.2
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    • pp.116-121
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    • 2003
  • We have observed a nonclassical effect in a fourth-order interference experiment with the photon pairs produced by parametric down-conversion and the Hong-Ou-Handel interferometer. For interfering classical fields with orthogonal polarizations, the visibility can be no larger than 50%, and it depends on the ratio of the two beam intensities. It is found that not only is our observed visibility of 85% well above 50%, but it is also independent of the two beam intensities in coincidence measurements made in a two-photon polarization correlation experiment.

Development of On-axis Raman Lidar System for Remotely Measuring Hydrogen Gas at Long Distance (원거리 수소 가스 원격 계측을 위한 On-axis 라만 라이다 장치 개발)

  • Choi, In Young;Baik, Sung Hoon;Lim, Jae Young;Cha, Jung Ho;Kim, Jin Ho
    • Korean Journal of Optics and Photonics
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    • v.29 no.3
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    • pp.119-125
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    • 2018
  • Hydrogen gas is an important and promising energy resource that has no emissions of pollutants during power generation. However, hydrogen gas is very dangerous because it is colorless, odorless, highly flammable, and explosive at low concentration. Conventional techniques for hydrogen gas detection are very difficult for measuring the hydrogen gas distribution at long distances, because they sample the gas to measure its concentration. Raman lidar is one of the techniques for remotely detecting hydrogen gas and measuring the range of the hydrogen gas distribution. A Raman lidar system with an on-axis optical receiver was developed to improve the range of hydrogen gas detection at long distance. To verify the accuracy and improvement in the range of detecting the hydrogen gas, experiments measuring the hydrogen gas concentration are carried out using the developed on-axis Raman lidar system and a gas chamber, to prevent explosion of the hydrogen gas. As a result, our developed on-axis Raman lidar system can measure a minimum hydrogen gas concentration of 0.66 volume percent at a distance of 50 m.

Measurement of Fluorescence Correlation Function by Using Size and Concentration of Fluorescence Particles (형광입자들의 크기와 농도에 따른 형광 상관 분광함수 측정)

  • Han, Yesul;Lee, Jaeran;Kim, Sok Won
    • Korean Journal of Optics and Photonics
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    • v.23 no.3
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    • pp.113-118
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    • 2012
  • The concentration and hydrodynamic radius of nano-sized fluorescence particles diffusing in solution were compared by using fluorescence correlation spectroscopy (FCS), which can measure the variation of the correlation function of a fluorescence signal by size and number of particles. The used nano-sized fluorescence particles are Alex Fluor 647, quantum dots, and fluorescence beads, and three kinds of sample solutions with different concentrations were prepared by dilution to 1/10 and 1/100 with distilled water for each kind of particles. The effective focal volumes were calculated by using the known diffusion coefficient of Alexa Fluor 647 particles, and the diffusion time, number of particles in focal volume, and variation of concentration according to the dilution could be measured by the FCS system. Through this study, we determined that the concentrations of arbitrarily diluted sample solutions can be measured by a home-built FCS setup in the range of 0.1 nM ~ 10 nM and that the diffusion coefficient of the quantum dot was $27{\pm}1{\mu}m^2/s$.

Recent Progress in High-Luminance Quantum Dot Light-Emitting Diodes

  • Rhee, Seunghyun;Kim, Kyunghwan;Roh, Jeongkyun;Kwak, Jeonghun
    • Current Optics and Photonics
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    • v.4 no.3
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    • pp.161-173
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    • 2020
  • Colloidal quantum dots (QDs) have gained tremendous attention as a key material for highly advanced display technologies. The performance of QD light-emitting diodes (QLEDs) has improved significantly over the past two decades, owing to notable progress in both material development and device engineering. The brightness of QLEDs has improved by more than three orders of magnitude from that of early-stage devices, and has attained a value in the range of traditional inorganic LEDs. The emergence of high-luminance (HL) QLEDs has induced fresh demands to incorporate the unique features of QDs into a wide range of display applications, beyond indoor and mobile displays. Therefore it is necessary to assess the present status and prospects of HL-QLEDs, to expand the application domain of QD-based light sources. As part of this study, we review recent advances in HL-QLEDs. In particular, based on reports of brightness exceeding 105 cd/㎡, we have summarized the major approaches toward achieving high brightness in QLEDs, in terms of material development and device engineering. Furthermore, we briefly introduce the recent progress achieved toward QD laser diodes, being the next step in the development of HL-QLEDs. This review provides general guidelines for achieving HL-QLEDs, and reveals the high potential of QDs as a universal material solution that can enable realization of a wide range of display applications.