• 제목/요약/키워드: quantum groups

검색결과 77건 처리시간 0.022초

THE RELATIONSHIP BETWEEN NONCOMMUTATIVE AND LORENTZVIOLATING PARAMETERS IN QUANTUM

  • HEIDARI, A.;GHORBANI, F.;GHORBANI, M.
    • Journal of the Korean Society for Industrial and Applied Mathematics
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    • 제16권3호
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    • pp.205-216
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    • 2012
  • When it comes to Lorentz symmetry violation, there are generally two approaches to studying noncommutative field theory: 1) conventional fields are equivalent to noncommutative fields; however, symmetry groups are larger. 2) The symmetry group is the same as conventional standard model's symmetry group; but fields here are written based on the Seiberg-Witten map. Here by adopting the first approach, we aim to connect Lorentz violation coefficients with noncommutative parameters and compare the results with the second approach's results. Through the experimental values obtained for the Lorentz-violating parameters, we obtain a limit of noncommutative symmetry.

HEISENBERG GROUPS - A UNIFYING STRUCTURE OF SIGNAL THEORY, HOLOGRAPHY AND QUANTUM INFORMATION THEORY

  • Binz, Ernst;Pods, Sonja;Schempp, Walter
    • Journal of applied mathematics & informatics
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    • 제11권1_2호
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    • pp.1-57
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    • 2003
  • Vector fields in three-space admit bundles of internal variables such as a Heisenberg algebra bundle. Information transmission along field lines of vector fields is described by a wave linked to the Schrodinger representation in the realm of time-frequency analysis. The preservation of local information causes geometric optics and a quantization scheme. A natural circle bundle models quantum information visualized by holographic methods. Features of this setting are applied to magnetic resonance imaging.

Excitation Energy Induced S-shaped PL behavior in Graphene Quantum Dots

  • 장민호;조용훈
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.351.2-351.2
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    • 2016
  • Graphene quantum dots (GQDs) have attracted much attention because of various advantages such as cost-effectiveness of synthesis, low toxicity, and photostability. The origins of photoluminescence (PL) in GQDs were suggested as the intrinsic states for localized sp2 carbon domains and the extrinsic states formed by oxygen-functional groups.[1,2] Nevertheless, it is still unclear to understand the information of electric band structure in GQD. Here, we observed excitation energy induced S-shaped PL behavior. The PL peak energy position shows an S-shaped shift (redshift-blueshift-redshift) as function of the excitation wavelengths. From various samples, we only observed S-shaped PL shift in the GQDs with both luminescent origins of intrinsic and extrinsic states. Therefore, this S-shaped PL shift is related to different weight of intrinsic and extrinsic states in PL spectrum depending on the excitation wavelengths. This would be the key result to understand the electric band structure of the GQDs and its derivatives.

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퀀텀정보통신기술의 연구개발 로드맵에 관한 연구 (A Study on the R&D Roadmaps of Quantum Information and Communication Technology)

  • 이문기;박성택;권문주
    • 디지털융복합연구
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    • 제12권9호
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    • pp.139-151
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    • 2014
  • 퀀텀정보통신기술(QICT)은 현재 사용 중인 컴퓨터는 물론 앞으로 개발될 디지털 기반의 컴퓨터로는 해결하기 어려운 많은 문제에 대한 답을 제공해 줄 수 있는 잠재력을 지니고 있다. QICT는 엄청난 규모의 연구개발비 투자가 이루어지며 세계 유명 연구기관들이 앞 다투어 연구에 매진하는 핵심영역 중의 하나이다. 효율적인 연구개발을 이끌어가기 위해서는 이해관계자들이 모두 이해할 수 있는 기술적 로드맵이 필요하다. 로드맵은 연구개발결과물의 상업화로의 전환을 촉진시키고, 다양한 연구접근방법에서 생겨날 수 있는 갈등을 줄이고 시너지 효과를 창출하는데 필요한 방향 제시 역할을 해준다. 본 연구에서는 QICT에 관한 간략한 로드맵과 함께 QICT가 우리나라 산업에 미칠 수 있는 잠재력과 경제적 기여도에 대해 논의해보고자 한다.

Quantum Mechanical Simulation for the Analysis, Optimization and Accelerated Development of Precursors and Processes for Atomic Layer Deposition (ALD)

  • Mustard, Thomas Jeffrey Lomax;Kwak, Hyunwook Shaun;Goldberg, Alexander;Gavartin, Jacob;Morisato, Tsuguo;Yoshidome, Daisuke;Halls, Mathew David
    • 한국세라믹학회지
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    • 제53권3호
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    • pp.317-324
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    • 2016
  • Continued miniaturization and increasingly exact requirements for thin film deposition in the semiconductor industry is driving the search for new effective, efficient, selective precursors and processes. The requirements of defect-free, conformal films, and precise thickness control have focused attention on atomic layer deposition (ALD). ALD precursors so far have been developed through a trial-and-error experimental approach, leveraging the expertise and tribal knowledge of individual research groups. Precursors can show significant variation in performance, depending on specific choice of co-reactant, deposition stage, and processing conditions. The chemical design space for reactive thin film precursors is enormous and there is urgent need for the development of computational approaches to help identify new ligand-metal architectures and functional co-reactants that deliver the required surface activity for next-generation thin-film deposition processes. In this paper we discuss quantum mechanical simulation (e.g. density functional theory, DFT) applied to ALD precursor reactivity and state-of-the-art automated screening approaches to assist experimental efforts leading toward optimized precursors for next-generation ALD processes.

Fabrication of GaN Ring Structure with Broad-band Emission Using MOCVD and Wet Etching Techniques

  • Sim, Young-Chul;Lim, Seung-Hyuk;Cho, Yong-Hoon
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.243.1-243.1
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    • 2016
  • Recently, many groups have attempted to fabricate 3-dimensional (3D) structures of GaN such as pyramids, rods, stripes and annulars. Since quantum structures on non-polar and semi-polar planes of 3D structures have less influence of internal electric filed, multi quantum wells (MQWs) formed on those planes have high quantum efficiency. Especially, pyramidal and annular structures consist of various crystal planes with different emission wavelength, providing a possibillity of phosphor-free white light emtting diodes (WLEDs).[1] However, it still has problem to obtain high color rendering index (CRI) number because of narrow-band emission and poor indium composition caused by the formation of few number of facets during metal-organic chemical vapor deposition growth.[2] If we can fabricate 3D structure having more various facets, we can make broad-band emittied WLEDs and improve CRI number. In this study, we suggest a simple method to fabricate 3D structures having various facet and containing high indium composition by means of a combination of metal-organic chemical vapor deposition and wet chemical etching techniques.

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Highly Stable Photoluminescent Qunatum Dot Multilayers by Layer-by-Layer Assembly via Nucleophilic Substitution Reaction in Organic Media

  • 윤미선;김영훈;정상혁;백현희;조진한
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2011년도 춘계학술발표대회
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    • pp.244.2-244.2
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    • 2011
  • We introduce a novel and robust method for the preparation of nanocomposite multilayers, which allows the excellent photoluminescent (PL) properties as well as the accurate control over the composition and dimensions of multilayers. By exchanging the oleic acid stabilizers of CdSe@ZnS quantum dots (QDs) synthesized in organic solvent with 2-bromo-2-methylpropionic acid (BMPA) in the same solvent, these nanoparticles were be alternately deposited by nucleophilic substitution reaction with highly branched poly(amidoamine) dendrimer (PAMA) through layer-by-layer (LbL) assembly process. Our approach does not need to be transformed into the water-dispersible nanoparticles with electrostatic or hydrogen-bonding groups, which can deteriorate their inherent properties, for the built-up of multilayers. The nanocomposite multilayers including QDs exhibited the strong PL properties achieving densely packed surface coverage as well as long-term PL stability under atmospheric conditions in comparison with those of conventional LbL multilayers based on electrostatic interaction. Furthermore, we demonstrate that the flexible multilayer films with optical properties can be easily prepared using nucleophilic substitution reaction between bromo and amino groups in organic media. This robust and tailored method opens a new route for the design of functional film devices based on nanocomposite multilayers.

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Quantum-chemical Study of Effects of Alkoxy Substitution on the Conformations and Electronic Properties of Poly(p-phenylenevinylenes)

  • Hong, Sung Y.
    • Bulletin of the Korean Chemical Society
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    • 제20권1호
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    • pp.42-48
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    • 1999
  • We have performed a quantum-chemical investigation on the conformations and electronic properties of a variety of methoxy-substituted poly(p-phenylenevinylenes) (PPVs) to elucidate the effects of alkoxy substitution. Geometrical parameters for the polymers were fully optimized through Austin Model I (AM I) semi-empirical Hartree-Fock (HF) band calculations. Electronic properties of the polymers were obtained by applying the AM I optimized structures to the modified extended Huckel method. To confirm validity of the AM I conformational results, we also carried out ab initio HF calculations with the 6-31G (d) basis set for a variety of methoxy-substituted divinylbenzenes. It is found that the potential energy surfaces of alkoxy-substituted PPVs are quite shallow around the planar conformations, suggesting that the prepared films possess a variety of conformations with different torsion angle in the solid state, depending on the synthetic conditions. When two alkoxy groups are concurrently substituted at the adjacent sites in the phenylene ring, these groups are subject to rotating around the C(sp2)-O bonds by 70-80° to avoid the strong steric repulsion between them. Consequently, the overlap between the π-type p orbital of oxygen and the π molecular orbitals of the polymer decreases. This leads to a wide gap and a high oxidation potential for tetramethoxy-substituted PPV, compared to those of dialkoxy-substituted PPV.

Faujasite 표면 수산기의 산성에 관한 양자화학적 해석 (Quantum Chemical Calculations of Surface Hydroxyl Groups as Acid Site)

  • 김명철
    • 공업화학
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    • 제9권3호
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    • pp.361-363
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    • 1998
  • Faujasite 표면 수산기를 나타내는 cluster 모델의 전체에너지, 쌍극자모멘트, Wiberg결합차수 및 형식전하를 CNDO/2법을 이용하여 계산하였다. 이에 관한 양자화학적 고찰은 faujasite 표면 수산기의 산세기가 그 기하학적 구조와 Si/Al비에 의존되어 있음을 보여준다. B산성의 세기는 가교형 수산기가 독립형 수산기에 비해 컸었다. 모델분자들의 구조적 안정성은 Si/Al비가 클수록 증가하였다.

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