• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.541-541
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• 2012

InP quantum dots capped by myristic acid (InP-MA QDs) were synthesized by a typical hot injection method using MA as stablizing agent. The current density across the InP-MA QDs thin film which was fabricated by spin-coating method is about $10^{-4}A/cm^2$ at the electric field of 0.1 MV/cm from I-V measurement on a metal-insulator-metal (MIM) device. The low conductivity of the InP-MA QDs thin film is interpreted as due to the long interdistances among the dots governed by the MA molecules. Therefore, replacing the MA with thioacetic acid (TAA) by biphasic ligand exchange was conducted in order to obtain TAA capped InP QDs (InP-TAA). InP-TAA QDs were designed due to: 1) the TAA is very short molecule; 2) the thiolate groups on the surface of the InP-TAA QDs are expected to undergo condensation reaction upon thermal annealing which connects the QDs within the QD thin film through a very short linker -S-; and 3) TAA provides better passivation to the QDs both in the solution and thin film states which minimizing the effect of surface trapping states.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.191-191
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• 2012

InP quantum dot (QD) - organosilicon nanocomposites were synthesized and their photoluminescence quenching was mainly investigated because of their applicability to white LEDs (light emitting diodes). The as-synthesized InP QDs which were capped with myristic acid (MA) were incompatible with typical silicone encapsulants. Post ligand exchange the MA with a new ligand, 3-aminopropyldimethylsilane (APDMS), resulted in soluble InP QDs bearing Si-H groups on their surface (InP-APDMS) which allow embedding the QDs into vinyl-functionalized silicones through direct chemical bonding, overcoming the phase separation problem. However, the ligand exchange from MA to APDMS caused a significant decrease in the photoluminescent efficiency which is interpreted by ligand induced surface corrosion relying on theoretical calculations. The InP-APDMS QDs were cross-linked by 1,4-divinyltetramethylsilylethane (DVMSE) molecules via hydrosilylation reaction. As the InP-organosilicon nanocomposite grew, its UV-vis absorbance was increased and at the same time, the PL spectrum was red-shifted and, very interestingly, the PL was quenched gradually. Three PL quenching mechanisms are regarded as strong candidates for the PL quenching of the QD nano-composites, namely the scattering effect, Forster resonance energy transfer (FRET) and cross-linker tension preventing the QD's surface relaxation.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.15 no.7
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• pp.2356-2376
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• 2021

In this paper, we proposed a novel modulation recognition method based on quantum elephant herding algorithm (QEHA) evolving neural network under impulse noise environment. We use the adaptive weight myriad filter to preprocess the received digital modulation signals which passing through the impulsive noise channel, and then the instantaneous characteristics and high order cumulant features of digital modulation signals are extracted as classification feature set, finally, the BP neural network (BPNN) model as a classifier for automatic digital modulation recognition. Besides, based on the elephant herding optimization (EHO) algorithm and quantum computing mechanism, we design a quantum elephant herding algorithm (QEHA) to optimize the initial thresholds and weights of the BPNN, which solves the problem that traditional BPNN is easy into local minimum values and poor robustness. The experimental results prove that the adaptive weight myriad filter we used can remove the impulsive noise effectively, and the proposed QEHA-BPNN classifier has better recognition performance than other conventional pattern recognition classifiers. Compared with other global optimization algorithms, the QEHA designed in this paper has a faster convergence speed and higher convergence accuracy. Furthermore, the effect of symbol shape has been considered, which can satisfy the need for engineering.

• Nuclear Engineering and Technology
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• v.54 no.5
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• pp.1597-1605
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• 2022

A porous silica-based adsorbent was prepared by impregnating the pores of a silica support with the extractant 1,3-[(2,4-diethylheptylethoxy)oxy]-2,4-crown-6-calix[4]arene (Calix[4]arene-R14) and an additive agent 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide (C₂mim ⁺ NTf^-₂) as the materials to remove cesium(I) (Cs⁺) ions from seawater. The as-prepared adsorbent showed excellent adsorption performance toward Cs⁺ ions, with adsorption equilibrium reached within 2 h and an adsorption amount of 0.196 mmol/g observed. The solution pH, temperature, and the presence of coexisting metal ions were found to have almost no effect on Cs⁺ adsorption. The adsorption mechanism was considered to proceed via ion exchange between Cs⁺ and C₂mim⁺. In addition, the particle-induced X-ray emission analysis results further clarified that the adsorbed Cs⁺ ion species on the adsorbent was in the form of both CsCl and CsBr.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.298.1-298.1
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• 2016

Two-dimensional materials have been received significant interest after the discovery of graphene due to their fascinating electronic and optical properties for the application of novel devices. However, graphene lack of certain bandgap which is essential requirement to achieve high performance field-effect transistors. Analogous to graphene materials, molybdenum disulfide ($MoS_2$) as one of transition-metal dichalcogenides family presents considerable bandgap and exhibits promising physical, chemical, optical and mechanical properties. Here we studied nonvolatile memory based on $MoS_2$ which is grown by chemical vapor deposition (CVD) method. $MoS_2$ growth was taken on $1.5{\times}1.5cm^2$ $SiO_2$/Si-substrate. The samples were analyzed by Raman spectroscopy, atomic force microscopy and X-ray photoelectron spectroscopy. Current-voltage (I-V) characteristic was carried out HP4156A. The CVD-$MoS_2$ was analyzed as few layers and 2H-$MoS_2$ structure. From I-V measurement for two metal contacts on CVD-$MoS_2$ sample, we found typical resistive switching memory effect. The device structures and the origin of nonvolatile memory effect will be discussed.

• Journal of the Korean Magnetics Society
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• v.14 no.2
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• pp.83-88
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• 2004

Magnetism of molecular nanomagnet, which attracted a lot of academic attention after the discovery of the macroscopic quantum tunneling of magnetism, is reviewed. Molecular nanomagnet is metal-organic material in which magnetic ions are regularly located in the organic skeleton. Also, the interaction between the molecules is very small and those molecules form macroscopic molecular crystal in which molecules are residing at the element points in the crystal. Molecular nanomagnets show a lot of interesting features, especially, equivalence of macroscopic magnetic properties and molecular magnetic properties. In this paper, research results on molecular nanomagnet with microscopic tool like NMR are reviewed mainly. The new method to observe the quantum tunneling of magnetization discovered in Mnl2-ac with NMR is shown and the research results on the microscopic aspects of the macroscopic quantum tunneling of magnetization using the new method are shown. Also, the physical aspect of the level crossing effect which has been reported originally with NMR in molecular nanomagnet is reviewed with experiment results. The research results on the molecular nanomagnets will reveal the important information about the limit of the miniaturization of magnetic memory units and give us the basic scientific knowledge which is needed for the application for the quantum computation. Moreover, academically, many quantum mechanical theories which have not been checked the validity can be checked with experiments.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.293-293
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• 2014

Over last decade InGaN alloy structures have become the one of the most promising materials among the numerous compound semiconductors for high efficiency light sources because of their direct band-gap and a wide spectral region (ultraviolet to infrared). The primary cause for the high quantum efficiency of the InGaN alloy in spite of high threading dislocation density caused by lattice misfit between GaN and sapphire substrate and severe built-in electric field of a few MV/cm due to the spontaneous and piezoelectric polarizations is generally known as the strong exciton localization trapped by lattice-parameter-scale In-N clusters in the random InGaN alloy. Nonetheless, violet-emitting (390 nm) conventional low-In-content InGaN/GaN multi-quantum wells (MQWs) show the degradation in internal quantum efficiency compared to blue-emitting (450 nm) MQWs owing higher In-content due to the less localization of carrier and the smaller band offset. We expected that an improvement of internal quantum efficiency in the violet region can be achieved by replacing the conventional low-In-content InGaN/GaN MQWs with ultra-thin, high-In-content (UTHI) InGaN/GaN MQWs because of better localization of carriers and smaller quantum-confined Stark effect (QCSE). We successfully obtain the UTHI InGaN/GaN MQWs grown via employing the GI technique by using the metal-organic chemical vapor deposition. In this work, 1 the optical and structural properties of the violet-light-emitting UTHI InGaN/GaN MQWs grown by employing the GI technique in comparison with conventional low-In-content InGaN/GaN MQWs were investigated. Stronger localization of carriers and smaller QCSE were observed in UTHI MQWs as a result of enlarged potential fluctuation and thinner QW thickness compared to those in conventional low-In-content MQWs. We hope that these strong carrier localization and reduced QCSE can turn the UTHI InGaN/GaN MQWs into an attractive candidate for high efficient violet emitter. Detailed structural and optical characteristics of UTHI InGaN/GaN MQWs compared to the conventional InGaN/GaN MQWs will be given.

• Particle and aerosol research
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• v.6 no.2
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• pp.51-59
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• 2010

ZnO quantum dots embedded in a silica matrix without agglomeration were synthesized from $TEOS:Zn(NO_3)_2$ solutions in one-step process by aerosol-gel method. It was successfully demonstrated that the size of ZnO Q-dots could be controlled from 2 to 7 mm verified by a high resolution transmission electron microscope observation. The line scanning energy dispersive X-ray spectroscopy(EDS) revealed that the Q-dots existed preferentially inside SiO2 sphere when Zn/Si < 0.5. However, the Q-dots distributed homogeneously all over the sphere when Zn/Si > 1.0. Blue-shifted UV/Vis absorption peak observation confirmed the quantum size effect on the optical properties. The photoluminescence(PL) emission peaks of the powders at room temperature were consistent with previous reports in the following aspects: 1) PL characteristics are dominated by two peaks of deep-level defect-related emissions at 2.4 - 2.8 eV, 2) the first defect-related peak at 2.4 eV was blue shifted due to the quantum size effect with decreasing the concentration of $Zn(NO_3)_2$(decreasing the size of ZnO q dots). More interestingly, the existence of surface-exposed ZnO q dots affects greatly the second defect PL peak at 2.8 eV.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.276-276
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• 2010

Large-area micropatterned array of Co/Ni bilayer anti-dots was fabricated using photolithography and wet etching process. The surface morphology as well as the surface topography was checked by scanning electron microscopy and atomic force microscopy, whereas the magnetic properties were studied by magneto-optical Kerr effect (MOKE) and magnetic force microscopy (MFM). Systematic studies of the magnetic-reversal mechanism, the in-plane anisotropy and the switching field properties were carried out. To get a comprehensive knowledge about the domain configuration, we also employed OOMMF simulations. It was found from the MOKE measurements that a combined effect of configurational and the magneto-crystalline anisotropy simultaneously works in such micropatterned bilayer structures. In addition, the inclusion of holes in the uniform magnetic film drastically affected the switching field. The MFM images show well-defined domain structures which are periodic in nature. The micromagnetic simulations indicate that the magnetization reversal of such a structure proceeds by formation and annihilation of domain walls, which were equally manifested by the field-dependent MFM images. The observed changes in the magnetic properties are strongly related to both the patterning that hinders the domain-wall motion and to the magneto-anisotropic bilayered structure.

• Journal of the Semiconductor & Display Technology
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• v.18 no.1
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• pp.10-14
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• 2019

In this study, we synthesized two $Y_3Al_5O_{12}:Ce^{3+}$ phosphors ($7{\mu}m$-sized and $2{\mu}m$-sized YAG) with different sizes by controlling particles sizes of starting materials of the phosphors for white LED. In the smaller one ($2{\mu}m$-sized YAG), its photoluminescence intensity in the reflective mode was 63 % that of the bigger one ($7{\mu}m$-sized YAG); the quantum efficiencies were 93 % and 70 % for the smaller and the bigger ones. Two kinds of white LED packages with the same color coordinates were fabricated with a blue package (chip size $53{\times}30$) and two phosphors. The luminous flux of the white LED package with the smaller YAG phosphor was 92 % of that with the bigger one, indicating that the quantum efficiency of phosphor dispersed inside LED package was higher than that of the pure powder. It was consistently confirmed by the optical simulation (LightTools 6.3). It is notable according to the optical simulation that the white LED with the smaller phosphor showed 24 % higher luminous efficiency. If the smaller one had the same quantum efficiency as the bigger one (~93 %). Therefore, it can be suggested that the higher luminous efficiency of white LED can be possible by reducing the particle size of the phosphor along with maintaining its similar quantum efficiency.