• Current Photovoltaic Research
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• 제1권1호
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• pp.63-68
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• 2013

We investigated the effects of Au eutectic reaction on Si thin film growth by hot wire chemical vapor deposition. Small SiC and Si nano-particles fabricated through a wet etching process were coated and biased at 50 V on micro-textured Si p-n junction solar cells. Au thin film of 10 nm and a Si thin film of 100 nm were then deposited by an electron beam evaporator and hot wire chemical vapor deposition, respectively. The Si and SiC nano-particles and the Au thin film were structurally embedded in Si thin films. However, the Au thin film grew and eventually protruded from the Si thin film in the form of Au silicide nano-balls. This is attributed to the low eutectic bonding temperature ($363^{\circ}C$) of Au with Si, and the process was performed with a substrate that was pre-heated at a temperature of $450^{\circ}C$ during HWCVD. The nano-balls and structures showed various formations depending on the deposited metals and Si surface. Furthermore, the samples of Au nano-balls showed low reflectance due to surface plasmon and quantum confinement effects in a spectra range of short wavelength spectra range.

• ETRI Journal
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• 제41권6호
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• pp.829-837
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• 2019

The p-type nanowire field-effect transistor (FET) with a SiGe shell channel on a Si core is optimally designed and characterized using in-depth technology computer-aided design (TCAD) with quantum models for sub-10-nm advanced logic technology. SiGe is adopted as the material for the ultrathin shell channel owing to its two primary merits of high hole mobility and strong Si compatibility. The SiGe shell can effectively confine the hole because of the large valence-band offset (VBO) between the Si core and the SiGe channel arranged in the radial direction. The proposed device is optimized in terms of the Ge shell channel thickness, Ge fraction in the SiGe channel, and the channel length (L_g) by examining a set of primary DC and AC parameters. The cutoff frequency (f_T) and maximum oscillation frequency (f_max) of the proposed device were determined to be 440.0 and 753.9 GHz when L_g is 5 nm, respectively, with an intrinsic delay time (τ) of 3.14 ps. The proposed SiGe-shell channel p-type nanowire FET has demonstrated a strong potential for low-power and high-speed applications in 10-nm-and-beyond complementary metal-oxide-semiconductor (CMOS) technology.

• 대한전자공학회논문지SP
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• 제45권5호
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• pp.95-102
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• 2008

이 논문은 고강도매질 CR(Computed Radiography) 영상의 잡음을 모델링하는 적절한 접근법을 제시한다. 잡음 유형의 통계적이고 비선형적 특성이 구체적으로 고안되었다. CR영상은 컴퓨터 처리에 의해 코드화되기 이전 이미 훼손된다. 다양한 형태의 잡음은 비록 디지털화된 상태로 검출된다 하더라도 통상 방사선 영상을 오염시킨다. 양자 방출시의 포아송 분포는 CR 영상판에서의 광자 분포에서 포아송 잡음 분포를 항상 유지하지 않는다. 그 통계적 특성은 재질 특성에 의해 상대적이며 경우의존적이다. 통계적 잡음모델링 과정에서 통상적인 포아송, 이항 내지는 가우스 통계분포의 가정이 고려되었으며 아울러 비선형 효과 또한 포함시켰다. 이는 잡음 영역의 고저 전 방사선량에 걸쳐 추정하는 해석적 모델을 구현한다. 그리고 이 분석적 접근은 고강도 강판튜브 스텝웨지의 방사선측정실험을 통해 관측한 CR 영상데이터에서 구현되었다. 그 결과는 매질의 두께변화에 따른 잡음의 일관성, 잡음분포특성, SNR 및 비선형 보간을 측정하는 상호비교의 파라미터연구에 유용하다.

• Bulletin of the Korean Chemical Society
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• 제32권3호
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• pp.988-992
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• 2011

$CO_2$ adsorption on mineral sorbents has a potential to sequester $CO_2$. This study used a density functional theory (DFT) study of $CO_2$ adsorption on barium oxide (BaO) in the presence of $H_2O$ to determine the role of $H_2O$ on the $CO_2$ adsorption properties on the ($2{\times}2$; $11.05\;{\AA}{\times}11.05\;{\AA}$) BaO (100) surface because BaO shows a high reactivity for $CO_2$ adsorption and the gas mixture of power plants generally contains $CO_2$ and $H_2O$. We investigated the adsorption properties (e.g., adsorption energies and geometries) of a single $CO_2$ molecule, a single $H_2O$ molecule on the surface to achieve molecular structures and molecular reaction mechanisms. In order to evaluate the coordinative effect of $H_2O$ molecules, this study also carried out the adsorption of a pair of $H_2O$ molecules, which was strongly bounded to neighboring (-1.91 eV) oxygen sites and distant sites (-1.86 eV), and two molecules ($CO_2$ and $H_2O$), which were also firmly bounded to neighboring sites (-2.32 eV) and distant sites (-2.23 eV). The quantum mechanical calculations show that $H_2O$ molecule does not influence on the chemisorption of $CO_2$ on the BaO surface, producing a stable carbonate due to the strong interaction between the $CO_2$ molecule and the BaO surface, resulting from the high charge transfer (-0.76 e).

• 대한화학회지
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• 제28권6호
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• pp.366-373
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• 1984

기질의 치환기가 Y이고 이탈기의 치환기가 Z인 치환된 벤질 벤젠술포네이트 유도체들의 가용매-분해반응 속도를 MeOH-MeCN 혼합용매에서 측정하였다. 결과로 부터 본 반응은 전이 상태에서 기질-이탈기 사이의 결합파괴가 친핵체-기질 사이의 결합형성보다 우세한 dissociative $S_N2$ 메카니즘으로 진행됨을 알 수 있었다. 복합 Hammett 관계 분석에서 상호작용항 ${\rho}_{YZ}$가 작은 것으로 부터 본 반응에서는 기질 및 이탈기의 치환기 사이에 직접적인 상호작용이 중요하지 않음을 알 수 있었으며 이는 본 반응이 dissociative $S_N2 $반응임을 뒷받침해주는 것으로 설명할 수 있었다. 전이 상태 변화에 대한 QM해석 방법은 실험 결과와 잘 일치됨을 알 수 있었으며 PES모형 해석에 의해서는 이탈기 효과를 고려함에 있어 실험결과와 일치되지 않는 면이 있음을 알 수 있었다.

• Nuclear Engineering and Technology
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• 제45권7호
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• pp.847-858
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• 2013

Since 2001, a series of five irradiation test campaigns for atomized U-Mo dispersion fuel rods, KOMO-1, -2, -3, -4, and -5, has been conducted at HANARO (Korea) in order to develop high performance low enriched uranium dispersion fuel for research reactors. The KOMO irradiation tests provided valuable information on the irradiation behavior of U-Mo fuel that results from the distinct fuel design and irradiation conditions of the rod fuel for HANARO. Full size U-Mo dispersion fuel rods of 4-5 $g-U/cm^3$ were irradiated at a maximum linear power of approximately 105 kW/m up to 85% of the initial U-235 depletion burnup without breakaway swelling or fuel cladding failure. Electron probe microanalyses of the irradiated samples showed localized distribution of the silicon that was added in the matrix during fuel fabrication and confirmed its beneficial effect on interaction layer growth during irradiation. The modifications of U-Mo fuel particles by the addition of a ternary alloying element (Ti or Zr), additional protective coatings (silicide or nitride), and the use of larger fuel particles resulted in significantly reduced interaction layers between fuel particles and Al.

• 한국환경과학회지
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• 제11권10호
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• pp.1023-1030
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• 2002

The effects on photosynthesis of NaCl(0, 0.2, 0.4, 0.6, 0.8 or 1.0 M) were examined in etiolated barley seedlings. Chlorophyll(Chl) a, Chl b and carotenoid contents, Chl a fluorescence and quenching coefficients of Chl fluorescence have been determined in the primary leaves of etiolated barley seedlings cultivated under low light(60 $\mu$㏖ $m^{-2}\;s^{-1}$). Chl a, b, and carotenoid contents were decreased remarkably in comparison with the control at 0.4 M NaCl. However, the value of Fo and Fv were decreased at 0.6 M NaCl and the ratio of Fv/Fm were deceased at 1.0 M NaCl. Chlorophyll synthesis was seriously inhibited from 0.4 M NaCl, and the photosynthetic electron transport system was inhibited from 0.6 M NaCl. Quantum of photosystem II reaction center was inhibited at 1.0 M NaCl. The effects of NaCl on the Chl content were raised in a 6 hrs, but the effects of NaCl on the value of Fo, Fv and Fv/Fm were raised in 30 hrs. The value of qP was decreased in comparison with the control at all concentrations, but there was a small change in the value qE. These results provide evidence that NaCl inhibited effects of various concentration of NaCl were inhibited quinone redox, however, proton gradient between thylakoid membranes was little damaged.

• 한국전기전자재료학회논문지
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• 제24권9호
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• pp.750-754
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• 2011

In this research, the electric characteristic of organic light-emitting diodes(OLEDs) was studied depending on thickness of amorphous fluoropolymer(Teflon-AF) which is the material of hole injection layer to improve electric characteristic of OLEDs. Sample composition was fabricated in double layer. The basic structure was fabricated by ITO/tris(8-hydroxyquinoline) aluminum (Alq3)/Al and the 2 layer was fabricated by ITO/2,2-Bistrifluoromethyl-4,5-Difluoro-1,3-Dioxole(Teflon-AF)/tris(8-hydro xyquinoline) aluminum (Alq3)/Al. The experiment was carried with variation of thickness of Teflon-AF at 1.0, 2.0, 2.5, 3.0 nm. The result showed when Teflon-AF thickness was 2.5 nm, the electric and optical characteristic were well performed. Moreover, when it was compared with Teflon-AF without materials, it was improved 15.1 times more on luminance, 12.7 times more on luminous efficiency and 12.1 times more on external quantum efficiency. Therefore, OLEDs element with optimum hole injection layer reduced energy barrier and driving voltage, and confirmed that it improved efficiency widely.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.37-37
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• 2010

Silicate-silsesquioxane or siloxane-silsesquioxane hybrid thin films are strong candidates as matrix materials for ultra low dielectric constant (low-k) thin films. We synthesized the silicate-silsesquioxane hybrid resins from tetraethoxyorthosilicate (TEOS) and methyltrimethoxysilane (MTMS) through hydrolysis and condensation polymerization by changing their molar ratios ([TEOS]:[MTMS] = 7:3, 5:5, and 3:7), spin-coating on Si(100) wafers. In the case of [TEOS]:[MTMS] 7:3, the dielectric permittivity value of the resultant thin film was measured at 4.30, exceeding that of the thermal oxide (3.9). This high value was thought to be due to Si-OH groups inside the film and more extensive studies were performed in terms of electronic, ionic, and orientational polarizations using Debye equation. The relationship between the mechanical properties and the synthetic conditions of the silicate-silsesquioxane precursors was also investigated. The synthetic conditions of the low-k films have to be chosen to meet both the low orientational polarization and high mechanical properties requirements. In addition, we have investigated a new solution-based approach to the synthesis of semiconducting chalcogenide films for use in thin-film transistor (TFT) devices, in an attempt to develop a simple and robust solution process for the synthesis of inorganic semiconductors. Our material design strategy is to use a sol-gel reaction to carry out the deposition of a spin-coated CdS film, which can then be converted to a xerogel material. These devices were found to exhibit n-channel TFT characteristics with an excellent field-effect mobility (a saturation mobility of ${\sim}\;48\;cm^2V^{-1}s^{-1}$) and low voltage operation (< 5 V). These results show that these semiconducting thin film materials can be used in low-cost and high-performance printable electronics.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.200.2-200.2
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• 2013

Yttrium (Y)이 도핑 된 ZnO 나노 구조물을 수열합성법으로 제작하였다. 먼저 졸겔법으로 SiO2/Si 기판 위에 seed layer (Y-doped ZnO ; Y0.02Zn0.98O)를 제작하였으며 5번의 코팅을 진행하여 박막의 두께는 약 180 nm로 측정이 되었다. 그 후 진공 분위기에서 RTA를 이용하여 $500^{\circ}C$에서 3분간 열처리가 진행되었다. 이어서 수열합성법으로 mole 농도를 0.5~1.0 M 범위에서 변화시키며 YZO 시료를 제작하였다. X-ray diffraction (XRD)을 통해서 Y2O3 또는 결함과 관련된 피크는 관찰이 되지 않았으며, 모든 구조물에서 압축응력이 존재하는 알 수 있었으며, field emission scanning electron microscope (FESEM)에서 나노 구조물의 크기와 형태는 수열합성법의 mole 농도에 많은 영향을 받는 것으로 나타났다. Hall effect 측정을 통해서 모든 구조물은 n-type 전도 특성을 가지는 것으로 나타났다. 또한 광학적 특성인 photoluminescence (PL)에서는 수열합성법의 화학식을 고려할 때 Zn가 rich한 상태에서는 Zn interstitial로 존재하는 것으로 나타났고, mole 농도가 높아 질수록 free exciton에 의한 재결합인 UV emission이 우세하게 나타났다.