• Korean Journal of Materials Research
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• v.13 no.11
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• pp.708-710
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• 2003

One-dimensional array of InAs quantum dots (QDs) have been grown on V-grooved GaAs substrates by low-pressure metalorganic chemical vapor deposition. Atomic force microscope images show that InAs QDs are aligned in one-dimensional rows along the ［011］oriented bottom of V-grooves and no QDs are formed on the sidewalls and the surface of mesa top. Capability to grow one-dimensional InAs QDs array would feasible for the single electron tunneling devices and other novel quantum-confined devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.2
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• pp.99-103
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• 2001

We present a detailed of the interband transitions of InAs/GaAs self-organized quantum dots(QDs) based on surface photovoltage(SPV), photoreflactance(PR) and photoluminescence(PL) spectroscopies. At room temperature, interband absorption transitions of QDs have been observed by using SPV spectrum, which clearly exhibits three well-resolved absorption transitions of QDs have been observed by using SPV spectrum, which clearly exhibits three well-resolved absorption peaks. The absorption line shape is Gaussian-like. Furthermore, the corresponding interband transitions are also observed in PR and PL experiments at 77K.

• Journal of the Korean Ceramic Society
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• v.54 no.6
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• pp.449-469
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• 2017

The development of quantum dots (QDs) has had a significant impact on various applications, such as solar cells, field-effect transistors, and light-emitting diodes (LEDs). Through successful engineering of the core/shell heterostructure of QDs, their photoluminescence (PL) quantum yield (QY) and stability have been dramatically enhanced. Such high-quality QDs have been regarded as key fluorescent materials in realizing next-generation display devices. Particularly, electrically driven (or electroluminescent, EL) QD light-emitting diodes (QLED) have been highlighted as an alternative to organic light-emitting diodes (OLED), mostly owing to their unbeatably high color purity. Structural optimizations in QD material as well as QLED architecture have led to substantial improvements of device performance, especially during the past decade. In this review article, we discuss QDs with various semiconductor compositions and describe the mechanisms behind the operation of QDs and QLEDs and the primary strategies for improving their PL and EL performances.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.92-92
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• 2010

Replacing the existing illumination with solid-state lighting devices, such as light-emitting diodes (LEDs) are expected to reduce energy consumption and environmental pollution as they provide better efficiency and longer lifetimes. Currently, white light emitting diodes are composed of UV or blue LED with down-converting materials such as highly luminescent phosphors White light-emitting diodes (LED) were fabricated with multi-shell nanocrystal quantum dots for enhanced luminance and improved stability over time. Multi-shell quantum dots (QDs) were synthesized through one pot process by using the Successive Ionic Layer Adsorption and Reaction (SILAR) method. As prepared, the multi-shell QD has cubic lattice of zinc-blend structure with semi-spherical shape with quantum yield of higher than 60 % in solution. Further, highly fluorescent multi-shell QD was deposited on the blue LED, which resulted in QD-based white LED with high luminance with excellent color rendering properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.6
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• pp.547-555
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• 2022

Color conversion layer refers to a layer that converts the blue light emitted from the backlight into the red and green light. Heavy metal-free quantum dots and perovskite nanocrystals have attracted great attention as base materials for color conversion layers due to their outstanding optical characteristics. Here, we review recent advances in the development of color conversion layers based on quantum dots. First, we overview the representative optical characteristics of quantum dots and perovskite nanocrystals, and then introduce printing techniques for color converting layers including photolithography, inkjet printing, and nanoimprinting. Finally, we conclude this review with a brief perspective.

• 한국초전도학회:학술대회논문집
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• v.16
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• pp.21-21
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• 2006

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.05a
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• pp.871-872
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• 2012

• Journal of the Korean Electrochemical Society
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• v.10 no.4
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• pp.257-261
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• 2007

The electronic properties of quantum dots can be tuned by changing the size of particles without any change in their chemical composition. CdSe quantum dots, the sizes of which were controlled by changing the concentrations of Cd and Se precursors, were adsorbed on $TiO_2$ photoelectrodes and used as sensitizers for photovoltaic cells. For applications of CdSe quantum dot as sensitizers, $CdSe/TiO_2$ films on conducting glass were employed in a sandwich-type cell that incorporated a platinum-coated conductive glass and an electrolyte consisting of an $I^-/I_3^-$ redox. The fill factor (FF) and efficiency for energy conversion ($\c{c}$) of the photovoltaic cell was 62 % and 0.32 %, respectively.

• Bulletin of the Korean Chemical Society
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• v.28 no.6
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• pp.953-958
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• 2007

Anchoring quantum dots (QDs) onto thermodynamically stable, large band gap oxide semiconductors is a very important strategy to enhance their quantum yields for solar energy conversion in both visible and near-IR regions. We describe a general procedure for anchoring a few chalcogenide QDs onto the titanium oxide layer. To anchor the colloidal QDs onto a mesoporous TiO2 layer, linker molecules containing both carboxylate and thiol functional groups were initially attached to TiO2 layers and subsequently used to capture dispersed QDs with the thiol group. Employing the procedure, we exploited cadmium selenide (CdSe) and cadmium telluride (CdTe) quantum dots (QDs) as inorganic sensitizers for a large band gap TiO2 layer of dye-sensitized solar cells (DSSCs). Their attachment was confirmed by naked eyes, absorption spectra, and photovoltaic effects. A few QD-TiO2 systems thus obtained have been characterized for photoelectrochemical solar energy conversion.

• Journal of the Optical Society of Korea
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• v.10 no.4
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• pp.184-187
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• 2006

For resonant excitation of the ground state $1s^e-1S^h_{3/2}$, dynamics of 'the electron-hole pair in a CdSe quantum dot was investigated by degenerate pump-probe measurement. At low e-h pair densities, the decay of $1s^e-1S^h_{3/2}$ state is dominated by radiative recombination. As the number of the electron-hole pairs increases, new decay features become significant. Theoretical comparison suggests this is attributed to the bi-molecular and Auger-type scattering.