• Korean Journal of Materials Research
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• v.26 no.3
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• pp.117-122
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• 2016

White organic light-emitting diodes with a structure of indium-tin-oxide [ITO]/N,N-diphenyl-N,N-bis-[4-(phenylm-tolvlamino)-phenyl]-biphenyl-4,4-diamine [DNTPD]/[2,3-f:2, 2-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile [HATCN]/1,1-bis(di-4-poly-aminophenyl) cyclo -hexane [TAPC]/emission layers doped with three color dopants/4,7-diphenyl-1,10-phenanthroline [Bphen]/$Cs_2CO_3$/Al were fabricated and evaluated. In the emission layer [EML], N,N-dicarbazolyl-3,5-benzene [mCP] was used as a single host and bis(2-phenyl quinolinato)-acetylacetonate iridium(III) [Ir(pq)2acac]/fac-tris(2-phenylpyridinato) iridium(III) $[Ir(ppy)_3]$/iridium(III) bis[(4,6-di-fluoropheny)-pyridinato-N,C2] picolinate [FIrpic] were used as red/green/blue dopants, respectively. The fabricated devices were divided into five types (D1, D2, D3, D4, D5) according to the structure of the emission layer. The electroluminescence spectra showed three peak emissions at the wavelengths of blue (472~473 nm), green (495~500 nm), and red (589~595 nm). Among the fabricated devices, the device of D1 doped in a mixed fashion with a single emission layer showed the highest values of luminance and quantum efficiency at the given voltage. However, the emission color of D1 was not pure white but orange, with Commission Internationale de L'Eclairage [CIE] coordinates of (x = 0.41~0.45, y = 0.41) depending on the applied voltages. On the other hand, device D5, with a double emission layer of $mCP:[Ir(pq)_2acac(3%)+Ir(ppy)_3(0.5%)]$/mCP:[FIrpic(10%)], showed a nearly pure white color with CIE coordinates of (x = 0.34~0.35, y = 0.35~0.37) under applied voltage in the range of 6~10 V. The luminance and quantum efficiency of D5 were $17,160cd/m^2$ and 3.8% at 10 V, respectively.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.13 no.2
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• pp.1100-1123
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• 2019

A code-based cryptosystem can resist quantum-computing attacks. However, an original system based on the Goppa code has a large key size, which makes it unpractical in embedded devices with limited sources. Many special error-correcting codes have recently been developed to reduce the key size, and yet these systems are easily broken through side channel attacks, particularly differential power analysis (DPA) attacks, when they are applied to hardware devices. To address this problem, a higher-order masking scheme for a McEliece cryptosystem based on the quasi-dyadic moderate density parity check (QD-MDPC) code has been proposed. The proposed scheme has a small key size and is able to resist DPA attacks. In this paper, a novel McEliece cryptosystem based on the QD-MDPC code is demonstrated. The key size of this novel cryptosystem is reduced by 78 times, which meets the requirements of embedded devices. Further, based on the novel cryptosystem, a higher-order masking scheme was developed by constructing an extension Ishai-Sahai-Wagne (ISW) masking scheme. The authenticity and integrity analysis verify that the proposed scheme has higher security than conventional approaches. Finally, a side channel attack experiment was also conducted to verify that the novel masking system is able to defend against high-order DPA attacks on hardware devices. Based on the experimental validation, it can be concluded that the proposed higher-order masking scheme can be applied as an advanced protection solution for devices with limited resources.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.2
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• pp.153-160
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• 2010

A magnetocardiogram (MCG) is a recording of the biomagnetic signals generated by cardiac electrical activity. Biomagnetic instruments are based on superconducting quantum interference devices (SQUIDs). A liquid cryogenic Dewar flask was used to maintain the superconductors in a superconducting state at a very low temperature (4 K). In this study, the temperature distribution characteristics of the liquid helium in the Dewar flask was investigated. The Dewar flask used in this study has a 30 L liquid helium capacity with a hold time of 5 d. The Dewar flask has two thermal shields rated at 150 and 40 K. The temperatures measured at the end of the thermal shield and calculated from the computer model were compared. This study attempted to minimize the heat transfer rate of the cryogenic Dewar flask using an optimization method about the geometric variable to find the characteristics for the design geometric variables in terms of the stress distribution of the Dewar flask. For thermal and optimization analysis of the structure, the finite element method code ANSYS 10 was used. The computer model used for the cryogenic Dewar flask was useful to predict the temperature distribution for the area less affected by the thermal radiation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.9
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• pp.15-22
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• 2000

The effects of carrier transport and input power on the extinction ratio was theoretically analyzed in a 1.55${\mu}m$ InGaAsP/InGaAsP multiple-quantum-well(MQW) electroabsorption(EA) modulator. Poisson's equation, current continuity equations for electrons and holes, and optical field distribution were self-consistently solved by considering electric field dependent absorption coefficients. The field screening effect due to the carrier accumulation in heterointerface and the space-charge region occurred more seriously at the input side of modulator as input optical intensity increased. It was revealed that extinction ratio could be steeply degraded for modulator with the length of 200${\mu}m$ when an input power exceeds 10mW. A degradation of extinction ratio due to the field screening effect would be more significantly at high-performance devices such as a 1.55${\mu}m$DFB-LD/EA-modulator integrated source where optical coupling efficiency is almost complete or a very high-speed modulator with its length as short as a few tens ${\mu}m$.

• Journal of the Korean Institute of Telematics and Electronics
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• v.18 no.4
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• pp.49-61
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• 1981

A generally applicable computer simulation program for diffused silicon solar cells has been developed on the basis of the experimental results. The program can be easily used to obtain the spectral response and I-V characteristics for N+P, P+N N+PP+, P+NN+cells by changing various input parameters. The insolated spectra can be taken from AMI and constant intensity and GE - ELH lamp light sources. The options for AR coating are Si3N4 film and materials with constant reflectance including zero reflectance for ideal case. The computer simulation demonstrates successful results compared with the measured values for the short circuit current, open circuit voltage, efficiency, spectral response, quantum efficiency, I-V characteristics, etc. This program was used to optimize doping concentration, cell thickness, light concentration, junction depth, and to obtain the limit values for front surface recornbination velocity, effective carrier life time in the depletion regions and shunt resistance, and also to drive the changing rate in conversion efficiency depending on operation temperature, series resistance and electric field strength in N+P+ bulk regions.

• The Transactions of the Korea Information Processing Society
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• v.5 no.10
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• pp.2686-2703
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• 1998

The widening pClformnnce gap between processor and memory causes an emergence of the promising architecture, processor-memory (PM) integration In this paper, various design issues for P-M integration are studied, First, an analytical model of the DRAM access time is constructed considering both the bank conflict ratio and the DRAM page hit ratio. Then the points of both the performance improvement and the perfonnance bottle neck are found by the proposed model as designing on-chip DRAM architectures. This paper proposes the new architecture, called the delayed precharge bank architecture, to improve the perfonnance of memory system as increasing the DRAM page hit ratio. This paper also adapts an efficient bank interleaving mechanism to the proposed architecture. This architecture is verified !II he better than the hierarchical multi-bank architecture as well as the conventional bank architecture by executiun driven simulation. Eight SPEC95 benchmarks are used for simulation as changing parameters for the cache architecture, the number of DRAM banks, and the delayed time quantum.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.196-208
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• 2007

An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.

• The Transactions of the Korea Information Processing Society
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• v.1 no.3
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• pp.367-379
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• 1994

This paper describes scheduling algorithms of the UNIX operating system and shows an analytical approach to approximate the average conditional response time for a process in the UNIX operating system. The average conditional response time is the average time between the submittal of a process requiring a certain amount of the CPU time and the completion of the process. The process scheduling algorithms in thr UNIX system are based on the priority service disciplines. That is, the behavior of a process is governed by the UNIX process schuduling algorithms that (ⅰ) the time-shared computer usage is obtained by allotting each request a quantum until it completes its required CPU time, (ⅱ) the nonpreemptive switching in system mode and the preemptive switching in user mode are applied to determine the quantum, (ⅲ) the first-come-first-serve discipline is applied within the same priority level, and (ⅳ) after completing an allotted quantum the process is placed at the end of either the runnable queue corresponding to its priority or the disk queue where it sleeps. These process scheduling algorithms create the round-robin effect in user mode. Using the round-robin effect and the preemptive switching, we approximate a process delay in user mode. Using the nonpreemptive switching, we approximate a process delay in system mode. We also consider a process delay due to the disk input and output operations. The average conditional response time is then obtained by approximating the total process delay. The results show an excellent response time for the processes requiring system time at the expense of the processes requiring user time.

• Journal of applied mathematics & informatics
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• v.25 no.1_2
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• pp.435-443
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• 2007

Computing the interior spectrum of large sparse generalized eigenvalue problems $Ax\;=\;{\lambda}Bx$, where A and b are large sparse and SPD(Symmetric Positive Definite), is often required in areas such as structural mechanics and quantum chemistry, to name a few. Recently, CG-type methods have been found useful and hence, very amenable to parallel computation for very large problems. Also, as in the case of linear systems proper choice of preconditioning is known to accelerate the rate of convergence. After the smallest eigenpair is found we use the orthogonal deflation technique to find the next m-1 eigenvalues, which is also suitable for parallelization. This offers advantages over Jacobi-Davidson methods with partial shifts, which requires re-computation of preconditioner matrx with new shifts. We consider as preconditioners Incomplete LU(ILU)(0) in two variants, ever-relaxation(SOR), and Point-symmetric SOR(SSOR). We set m to be 5. We conducted our experiments on matrices from discretizations of partial differential equations by finite difference method. The generated matrices has dimensions up to 4 million and total number of processors are 32. MPI(Message Passing Interface) library was used for interprocessor communications. Our results show that in general the Multi-Color ILU(0) gives the best performance.

• Proceedings of the IEEK Conference
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• 2002.07a
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• pp.425-428
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• 2002

The technology of Computer Graphics (CG) has been in great progress for almost 20 years and has proven to be a valuable tool for a broad variety of fields, including nuclear engineering. To work in any hazardous environment for example radiation field is particularly challenging because the danger is not always visually apparent. In this study as the application of CG to nuclear engineering field, we proposed to develop a radiation risk recognition aided system in which various radiation information; radiation risks, radiation distribution, hazard information and so on, were visualized by CG. The system used the server and client system. In the server there were two parts; one (main-server) was the database part having various data and the other (sub-server) was the visualization part visualizing the human phantom by POV-Ray. In the client there was the input and output part. The outputs from the system were various radiation information represented by coloring, circle graph and line graph intuitionally. The system is useful for a broad range of activities including radiation protection, radiation management, dose minimization, and demonstration to the public.