• International Journal of Precision Engineering and Manufacturing
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• 제9권4호
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• pp.11-15
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• 2008

Metrology tools with the ability to measure spindle motion error on the order of a nanometer are required due to recent advances in nanotechnology. We propose a direct measurement method for the radial motion error of a precision spindle using a regular crystalline lattice and a scanning tunneling microscope (STM). A highly oriented pyrolytic graphite (HOPG) crystal combined with an STM is used as a two-dimensional reference scale. The measurement principle and the preliminary experimental results are discussed in this article. The preliminary experimental results demonstrated that the proposed method has the capability to incorporate a two-dimensional encoder to measure the spindle motion error.

• Journal of Chest Surgery
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• 제20권3호
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• pp.458-472
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• 1987

A heart supplies bloods of about 15, 000 liters to each human organ in a day. A normal function of heart valves is necessary to this act of heart. The disease of heart valve develops to a narrowness of a closure, resulting in an abnormal circulation of bloods. In an attempt to eliminate the affliction of heart valves, the operation method to repair with artificial heart valves has been developed and saved numerous patients over past 30 years. This replacement operation has been performed since early 1960`s in Korea, but all the artificial heart valves used are imported from abroad with very high costs until recent years. The artificial heart valve using pyrolytic carbon has been developed at KAIST, which was proved to be stable in the mechanical performance and durability. Therefore, the in viva performance of this valve was examined through animal tests. The artificial heart valves used in this study are tilting disc type valves, in which the disc were made of graphite coated with pyrolytic carbon and the cages were made of titanium. In viva testings of these valves were performed in 12 dogs, in which right ventriculo-pulmonary arterial [Croup I] or inter-aortic [Croup IV] valved conduit was implanted using polytetrafluoroethylene conduits containing KAIST valve and aortic valve [Group II] or pulmonary valve [Croup III] was replaced by a KAIST valve with a 21mm or 19mm tissue annulus diameter. In group I and II, pre-and post-operative transvalvular pressure gradient was measured and compared with other prosthetic valves. During post operative period laboratory examination was performed including hemoglobin, hematocrit, red cell count, white cell, lactic acid dehydrogenase and platelet. The eight surviving dogs were sacrificed and autopsy was performed at 2, 6, and 8 weeks. KAIST valve has low transvalvular gradient and relatively high orifice area. Average ventriculo-aortic peak systolic transvalvular gradient was 14 mmHg in 21 mm valve and 19 mmHg in 19 mm valve. The valve has slight intravascular hemolysis effect. Thrombogenic effect of low polishing quality and eddy currents around small orifice is high. The valve has vulnerability of disc movement. These animal tests suggest that the improvement of the heart valve design, surface polishing state and prescription methods.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.490-490
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• 2011

Graphene, hexagonal network of carbon atoms forming a one-atom thick planar sheet, has been emerged as a fascinating material for future nanoelectronics. Huge attention has been captured by its extraordinary electronic properties, such as bipolar conductance, half integer quantum Hall effect at room temperature, ballistic transport over ${\sim}0.4{\mu}m$ length and extremely high carrier mobility at room temperature. Several approaches have been developed to produce graphene, such as micromechanical cleavage of highly ordered pyrolytic graphite using adhesive tape, chemical reduction of exfoliated graphite oxide, epitaxial growth of graphene on SiC and single crystalline metal substrate, and chemical vapor deposition (CVD) synthesis. In particular, direct synthesis of graphene using metal catalytic substrate in CVD process provides a new way to large-scale production of graphene film for realization of graphene-based electronics. In this method, metal catalytic substrates including Ni and Cu have been used for CVD synthesis of graphene. There are two proposed mechanism of graphene synthesis: carbon diffusion and precipitation for graphene synthesized on Ni, and surface adsorption for graphene synthesized on Cu, namely, self-limiting growth mechanism, which can be divided by difference of carbon solubility of the metals. Here we present that large area, uniform, and layer controllable graphene synthesized on Cu catalytic substrate is achieved by acetylene-assisted CVD. The number of graphene layer can be simply controlled by adjusting acetylene injection time, verified by Raman spectroscopy. Structural features and full details of mechanism for the growth of layer controllable graphene on Cu were systematically explored by transmission electron microscopy, atomic force microscopy, and secondary ion mass spectroscopy.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.424-424
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• 2009

그라핀은 밴드갭이 없어서 세미메탈의 성질을 띠므로 초고속 RF 소자에는 응용이 가능하지만, 현재 사용되는 반도체 칩에 사용하기가 불가능하다. 그러나 그라핀을 매우 좁은 리본 형태로 만들 경우 밴드갭이 생기고 이에 따라 반도체특성을 뛰게 된다. 이러한 특성은 시뮬레이션을 통해서만 이해되다가 2007년 P. Kim이 그라핀 나노리본의 밴드캡이 리본의 폭이 좁아짐에 따라 증가함을 실험적으로 최초로 발표하였다. 하지만 그라핀을 나노리본형태로 식각 방법에 대해서는 정확히 연구되지 않았다. 따라서 본 연구에서는 $O_2$ plasma ashing 방법을 이용하여 그라핀을 식각하는 방법에 대해 연구하였다. 먼저 Si기판을 initial cleaning 한 후, highly-oriented pyrolytic graphite(HOPG)를 이용하여 기존의 mechanical exfoliation 방식을 통해 그라핀을 형성하였다. Photo-lithography 방법을 통하여 패터닝한 후, 그라핀을 식각하기 위하여 Reactive Ion Etcher (RIE) system을 이용한 $O_2$ plasma ashing을 50 W에서 1 분간 실시하였다. 다시 image reverse photo-lithography 과정과 E-beam evaporator system를 통해서 Al 전극을 형성하여 graphene-FET를 제작하였고, 광학 현미경과 AFM (Atomic force microscope)을 통해 두께를 확인하였다. 본 연구를 통하여 $O_2$ plasma ashing을 이용하여 쉽게 그라 E을 식각할 수 있음을 확인 하였으며, 제작된 소자의 전기적 특성에 대해서 현재 실험중에 있다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.90.2-90.2
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• 2012

Graphene has recently attracted significant attention because of its unique optical and electrical properties. For practical device applications, special attention has to be paid to the synthesis of high-quality graphene on large-area substrates. Graphene has been synthesized by eloborated mechanical exfoliation of highly oriented pyrolytic graphite, chemical reduction of exfoliated grahene oxide, thermal decomposition of silicon carbide, and chemical vapor deposition (CVD) on Ni or Cu substrates. Among these techniques, CVD is superior to the others from the perspective of technological applications because of its possibility to produce a large size graphene. PECVD has been demonstrated to be successful in synthesizing various carbon nanostructures, such as carbon nanotubes and nanosheets. Compared with thermal CVD, PECVD possesses a unique advantage of additional high-density reactive gas atoms and radicals, facilitating low-temperature, rapid, and controllable synthesis. In the current study, we report results in synthesizing of high-quality graphene films on a Ni films at low temperature. Controllable synthesis of quality graphene on Cu foil through inductively-coupled plasma CVD (ICPCVD), in which the surface chemistry is significantly different from that of conventional thermal CVD, was also discussed.

• Nuclear Engineering and Technology
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• 제50권1호
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• pp.151-158
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• 2018

The neutron powder diffractometer (NPD) is used to study a variety of technologically important and scientifically driven materials such as superconductors, multiferroics, catalysts, alloys, ceramics, cements, colossal magnetoresistance perovskites, magnets, thermoelectrics, zeolites, pharmaceuticals, etc. Monte Carlo-based codes are powerful tools to evaluate the neutronic behavior of the NPD. In the present study, MCNPX 2.6.0 and Vitess 3.3a codes were applied to simulate NPD facilities, which could be equipped with different optic devices such as pyrolytic graphite or neutron chopper. So, the Monte Carlo-based codes were used to simulate the NPD facility of the 5 MW Tehran Research Reactor. The simulation results were compared to the experimental data. The theoretical results showed good conformity to experimental data, which indicates acceptable performance of the Vitess 3.3a code in the neutron optic section of calculations. Another extracted result of this work shows that application of neutron chopper instead of monochromator could be efficient to keep neutron flux intensity higher than $10^6n/s/cm^2$ at sample position.

• 대한화학회지
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• 제61권1호
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• pp.12-15
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• 2017

We presented a mapping the work function of the vanadium pentoxide ($V_2O_5$) nanonet structures by scanning Kelvin probe microscopy (SKPM). In this measurement, the $V_2O_5$ nanonet was self-assembled via dropping the solution of $V_2O_5$ nanowires (NWs) onto the $SiO_2$ substrate and drying the solvent, resulting in the networks of $V_2O_5$ NWs. We found that the SKPM signal as a surface potential of $V_2O_5$ nanonet is attributed to the contact potential difference (CPD) between the work functions of the metal tip and the $V_2O_5$ nanonet. We generated the histograms of the CPD signals obtained from the SKPM mapping of the $V_2O_5$ nanonet as well as the highly ordered pyrolytic graphite (HOPG) which is used as a reference for the calibration of the SKPM tip. By using the histogram peaks of the CPD signals, we successfully estimated the work function of ~5.1 eV for the $V_2O_5$ nanonet structures. This work provides a possibility of a nanometer-scale imaging of the work function of the various nanostructures and helps to understand the electrical characteristics of the future electronic devices.

• 한국산학기술학회논문지
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• 제7권6호
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• pp.1313-1318
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• 2006

흑연 음극 표면상에 형성되는 필름의 생성 기구를 규명하기 위하여, 1 몰의 $LiPF_6$가 함유된 탄산에틸렌과 탄산디에칠의 혼합 용액 중에서 고배향성 열분해 흑연을 0.5 mV $s^{-1}$ 의 느린 속도로 전위주사하면서 원자력간 현미경을 이용하여 전극표면을 in-situ 관찰하였다. 전해질 용액의 분해반응은 전극의 스텝 모서리 상에서 우선적으로 진행되었으며, 전극 전위 2.15 V (vs. $Li^+$/Li) 에서 시작되었다. 0.95-0.8 V (vs. $Li^+$/Li) 의 전위 영역에서 전극 표면의 특정 부분이 평탄하게 부풀어오르는 현상과, 타원형의 돌기 구조가 관찰되었다. 이러한 형상 변화에 있어서 전자는 용매화된 리튬 이온이 흑연 층간에 삽입되며 나타나는 구조 변화이며, 후자는 삽입된 용매화 리튬이 환원 분해되어 생성된 것으로 추정된다. 0.8 V (vs. $Li^+$/Li) 보다 음의 전위 영역에서는 입자상의 침전물이 전극 표면에 형성되었다. 1 사이클 후, 측정된 침전층의 두께는 30 nm 이었다. 이러한 침전물은 리튬염($LiPF_6$)과 용매 분자(EC 및 DEC)들이 분해되어 생성된 것이며, 전극 표면에서 계속적으로 전해질 용액이 분해되는 반응을 억제하는 중요한 역할을 하고 있는 것으로 생각된다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.16.2-16.2
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• 2011

Graphene has attracted significant attention due to its unique characteristics and promising nanoelectronic device applications. For practical device applications, it is essential to synthesize high-quality and large-area graphene films. Graphene has been synthesized by eloborated mechanical exfoliation of highly oriented pyrolytic graphite, chemical reduction of exfoliated grahene oxide, thermal decomposition of silicon carbide, and chemical vapor deposition (CVD) on metal substrates such as Ni, Cu, Ru etc. The CVD has advantages over some of other methods in terms of mass production on large-areas substrates and it can be easily separated from the metal substrate and transferred to other desired substrates. Especially, plasma-enhanced CVD (PECVD) can be very efficient to synthesize high-quality graphene. Little information is available on the synthesis of graphene by PECVD even though PECVD has been demonstrated to be successful in synthesizing various carbon nanostructures such as carbon nanotubes and nanosheets. In this study, we synthesized graphene on $Ni/SiO_2/Si$ and Cu plate substrates with CH4 diluted in $Ar/H_2$ (10%) by using an inductively-coupled PECVD (ICPCVD). High-quality graphene was synthesized at as low as $700^{\circ}C$ with 600 W of plasma power while graphene layer was not formed without plasma. The growth rate of graphene was so fast that graphene films fully covered on substrate surface just for few seconds $CH_4$ gas supply. The transferred graphene films on glass substrates has a transmittance at 550 nm is higher 94%, indicating 1~3 monolayers of graphene were formed. FETs based on the grapheme films transferred to $Si/SiO_2$ substrates revealed a p-type. We will further discuss the synthesis of graphene and doped graphene by ICPVCD and their characteristics.

• 공업화학
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• 제31권5호
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• pp.581-584
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• 2020

The effect of a chemical pretreatment on the surface carbon was investigated using a scanning electron microscope (SEM) and electrochemical methods. Primitive carbon has a reducing power likely due to incompletely oxidized functional groups on the surface. We aim to control this reducing power by chemical treatment and apply for the spontaneous deposition of nanoparticles (NPs). Highly ordered pyrolytic graphite (HOPG) was initially treated with a reducing agent, NaBH4 or an oxidizing agent, KMnO₄, for 5 min. Subsequently, the pretreated carbon was immersed in a platinum (Pt) precursor. Unexpectedly, SEM images showed that the reducing agent increased spontaneous PtNPs deposition while the oxidizing agent decreased Pt loading more as compared to that of using bare carbon. However, the amount of Pt on the carbon obviously decreased by NaBH₄ treatment for 50 min. Secondly, spontaneous reduction on pretreated glassy carbon (GC) was investigated using the catalytic hydrogen evolution reaction (HER). GC electrode treated with NaBH4 for a short and long time showed small (onset potential: -640 mV vs. MSE) and large overpotential for the HER, respectively. Although the mechanism is unclear, the electrochemistry results correspond to the optical data. As a proof-of-concept, these results demonstrate that chemical treatments can be used to design the shapes and amounts of deposited catalytic metal on carbon by controlling the surface state.