• 한국전기전자재료학회논문지
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• 제22권11호
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• pp.941-948
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• 2009

The present study aims at the examination of the effects of 1 mol% NiO addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and interface state levels of $ZnO-Bi_2O_3-Sb_2O_3$ (Sb/Bi=0.5, 1.0, and 2.0) systems (ZBS). The samples were prepared by conventional ceramic process, and characterized by density, XRD, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. The sintering and electrical properties of Ni-doped ZBS (ZBSN) systems were controlled by Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$) was decomposed more than $100^{\circ}C$ lowered in ZBS (Sb/Bi=1.0) by Ni doping. The reproduction of pyrochlore was suppressed by the addition of Ni in ZBS. Between two polymorphs of $Zn_7Sb_2O_{12}$ spinel ($\alpha$ and $\beta$), microstructure of ZBSN (Sb/Bi=0.5) composed of a-spinel was more homogeneous than $Sb/Bi{\geq}1.0$ composed of $\beta$-spinel phase. In ZBSN, the varistor characteristics were not improved drastically (non-linear coefficient $\alpha\;=\;6{\sim}11$) and independent on microstructure according to Sb/Bi ratio. Doping of Ni to ZBS seemed to form ${V_0}^{\cdot}$ (0.33 eV) as dominant bulk defect. From IS & MS, especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one and electrically inactive intergranular one with temperature.

• 한국전기전자재료학회논문지
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• 제23권3호
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• pp.211-215
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• 2010

Pulsed laser deposition is a very efficient technique for fabricating thin films of complex compounds. In the present work, $Bi_2O_3$-MgO-ZnO-$Nb_2O_5$ (BMZN) pyrochlore thin films were deposited on platinized Si substrates at various temperatures by using pulsed laser deposition technique. These films have been characterized by X-ray diffractometer (XRD), atomic force microscopy (AFM) to investigate their structural, morphological properties. MIM structure was manufactured to analyze di-electrical properties of BMZN thin films. XRD results reveal the thin films deposited at less than $400^{\circ}C$ show only amorphous phase, the crystallized thin films was observed when the thin films were prepared temperature at above $500^{\circ}C$. From AFM, it was known that the thin film grown at $400^{\circ}C$ is the densest. Dielectric constant increased with increasing temperature up to $400^{\circ}C$ at 100 kHz and dramatically decreased at the higher temperature. A aspect of dissipation factor was the exact opposite of dielectric constant. BMZN thin films grown at $400^{\circ}C$ exhibited a high dielectric constant of 60.9, a low dissipation factor of 0.007 at 100 kHz.

• 한국분말재료학회지
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• 제20권6호
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• pp.453-459
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• 2013

Lanthanum/gadolinium zirconate coatings are deposited via suspension plasma spray with suspensions fabricated by a planetary mill and compared with hot-pressed samples via solid-state reaction. With increase in processing time of the planetary mill, the mean size and BET surface area change rapidly in the case of lanthanum oxide powder. By using suspensions of planetary-milled mixture between lanthanum or gadolinium oxide and nano zirconia, dense thick coatings with fully-developed pyrochlore phases are obtained. The possibilities of these SPS-prepared coatings for TBC application are also discussed.

• Transactions on Electrical and Electronic Materials
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• 제8권2호
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• pp.84-88
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• 2007

[ $Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7$ ] (BZN), $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMN), and $Bi_2Cu_{2/3}Nb_{4/3}O_7$ (BCN) pyrochlore thin films were prepared on $Cu/Ti/SiO_2/Si$ substrates by pulsed laser deposition and the micro-structural and electrical properties were characterized for embedded capacitor applications. The BZN, BMN, and BCN films deposited at $25\;^{\circ}C$ and $150\;^{\circ}C$, respectively show smooth surface morphologies and dielectric constants of about $39\;{\sim}\;58$. The high dielectric loss of the films deposited at $150\;^{\circ}C$ compared with films deposited at $25\;^{\circ}C$ was attributed to the defects existing at interface between the films and copper electrode by an oxidation of copper bottom electrode. The leakage current densities and breakdown voltages in 200 nm thick-BMN and BZN films deposited at $150\;^{\circ}C$ are approximately $2.5\;{\times}\;10^{-8}\;A/cm^2$ at 3 V and above 10 V, respectively. Both BZN and BMN films are considered to be suitable materials for embedded capacitor applications.

• 한국세라믹학회지
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• 제32권12호
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• pp.1323-1330
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• 1995

The effects of various additives on the microstructures of sintered ZnO varistors were examined. Bi2O3, Sb2O3 and Cr2O3 were added to ZnO step by step to identify the effect of each component. The specimens were prepared by sintering at 110$0^{\circ}C$ and 120$0^{\circ}C$ in ambient atmosphere. In ZnO-Bi2O3-Sb2O3 ternary system, decrease of averge grain size due to antimony oxide addition depends on sintering temperature as well as Bi2O3 content. When Sb2O3 was partly or completely replaced by Cr2O3, grain size was further reduced. A significant amount of pyrochlore phase which was not transformed to spinel and Bi2O3-rich liquid phase seemed to remain during sintering at 110$0^{\circ}C$. Unlike ZnO-Bi2O3-Sb2O3 system, the $\alpha$-spinel phase containing significant amount of Cr did not transform to pyrochlore during furnace cooling. Fine spinel particles around 1${\mu}{\textrm}{m}$ size were ovserved within ZnO grains and grain boundaries, which were believed to be responsible for grain-growth inhibition in ZnO-Bi2O3-Sb2O3.

• 한국자기학회지
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• 제8권3호
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• pp.111-117
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• 1998

최근 perovskit 구조의 망간산화물에서 발견된 초거대자기저항(colossal magnetoresistance: CMR) 현상의 발견은 물리적 특이성과 공업적인 응용 가능성으로 학계의 큰 주목을 받고 있다. 그런데 이러한 CMR 현상은 망간화산화물외에 pyrochlore 구조의 Tl2Mn2O7과 spinel 구조의 Cr-황화물에서도 관측됨었음이 보고되었다. 본 논문에서는 Cr-황화물 Fe1-xCuxCr2S4 (x=0.0, 0.5, 1.0)의 전자구조를 구재밀도근사(local density approximation: LDA) lineatized muffintin orbital(LMTO) 밴드계산 방법을 이용하여 연구하였다. 그 결과 x=0.0, 0.5에 대한 특성저항은 절반금속(Half-Metal)성질과 얀-텔러(Jahn-Teller) 효과를 적용하여 정성적인 이해가 가능하였다. 특히, x=0.0, 0.5, 1.0각각에 대해서 전도모델을 제시하여, 계산결과로 얻어진 절반금속 전자구조가 CMR 현상과 밀접한 관련이 있음을 예측하였다.

• 한국재료학회지
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• 제9권12호
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• pp.1181-1187
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• 1999

diol을 기반으로 하는 Sol-Gel 방법으로 PZT (53/47) 1M sol 용액을 만들어 회전 코팅법으로 Pt/Ti/$SiO_2$/Si 기판위에 코팅하였고 한번 코팅으로 최대 0.9${\mu}m $의 PZT막을 얻었다. PZT는 비강유전성 pyrochlore상을 거쳐 강유전성 perovskite상으로 전이하며 따라서 PZT perovskite seed가 상전이에 미치는 영향을 규명하고자 하였다. 0.2${\mu}m $ 이하의 크기를 갖는 1wt% PZT분말을 propanol용액에 분산시켜 PZT sol 용액에 도입하여 seeded PZT 막을 제조하였다. Seeded PZT막을 열처리한 결과 perovskite상의 생성이 촉진되어 상전이 온도가 50$^{\circ}C$정도 낮아졌다.

• Geosciences Journal
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• 제22권6호
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• pp.921-938
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• 2018

The Motzfeldt intrusions in the Gardar Province, southern Greenland, split into syenitic plutonic and hypabyssal rocks, in which the latter include ring dykes and sheet intrusions. Sheet intrusions, considered as the source for rare earth elements (REE) and high field strength elements (HFSE), comprise sheets of peralkaline microsyenite (SPM), syenitic pegmatite (SP), and peralkaline microsyenite (PM). SP exhibits extremely high concentrations of REE and HFSE, which are positively correlated with increasing alkalinity from early towards late intrusion, caused by magmatic processes. In contrast, some of the SPM and PM are also significantly enriched in REE and HFSE, caused by post-magmatic fluids. The REE- and HFSE-rich phases in SP consist mainly of zircon and allanite with smaller amounts of pyrochlore in pseudomorph from the inferred eudialyte, whereas some of the PM and SPM consist of pyrochlore, REE-carbonate, and zircon in the matrix. The zircon grains in the Motzfeldt Sø Formation (MSF) syenite occur in interstitial spaces, exhibiting an association with magnetite and a bipyramidal form in texture. They are characterized by a highly fractured and embayed rim. Zircons from PM and SP are clearly enriched in Fe, Al, Ca, Na, Y, P, Hf, Y, P, Nb, Ta, and REE, and are depleted in Zr and Si in comparison with magmatic zircon. They also show a clear trend of higher LREE/HREE and $Eu/Eu^{\star}$ ratios, and lower $Ce/Ce^{\star}$ ratios, which define them as typical hydrothermal zircons. In contrast, zircons from the MSF syenite show a relatively lower LREE/HREE ratio and Eu and Ce anomalies of a similar magnitude compared with those from SP and PM. The occurrence and mineral composition of the zircon suggest that post-magmatic fluids have played an important role in the remobilization of REE and HFSE as well as the primary concentration of REE and HFSE, caused by magmatic processes.

• 한국전기전자재료학회논문지
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• 제32권2호
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• pp.174-177
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• 2019

The traditional yttria-stabilized zirconia (YSZ) used in thermal barrier coatings has a limited operating temperature owing to densification and volume changes at high temperatures. A $(La_{1-x}Y_x)_2Zr_2O_7$ sintered compound was prepared by the co-precipitation and oxalate methods, by adding lanthanum zirconate to yttria. The thermal properties and crystallinity obtained by the two different methods were compared. Both methods yielded pyrochlore structures, and the oxalate method confirmed phases at low temperatures. The thermal conductivity of the sintered bulk prepared by co-precipitation was 0.93 W/mK, while that prepared by the oxalate method was 0.85 W/mK. These values are superior to that of 4YSZ at $1,000^{\circ}C$, which is widely used in industries.

• 자원환경지질
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• 제37권3호
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• pp.303-309
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• 2004

Gd-Ti-O 및 Gd-Zr-O계에서의 파이로클로어 (Gd$_2$Ti$_2$$O_7$및 Gd$_2$Zr$_2$$O_7$)는 장주기 방사성 폐기물인 악티나이드 원소들을 고정화시킬 수 있는 물질로써 잘 알려져 있다. 따라서 본 연구에서는 소결법에 의해 이들을 합성하여, 상평형 관계 및 특성을 연구하였다. 혼합된 시료는 상온에서 200-400kgf/$cm^2$의 압력으로 성형한 후, 1000-1$600^{\circ}C$ 범위에서 소결온도 및 분위기를 변화시키면서 소결하였다. 합성된 시료는 XRD 및 SEM/EDS를 사용하여 상분석 및 화학조성을 분석하였다. 실험결과, Gd$_2$Ti$_2$$O_7$의 최적 합성조건은 140$0^{\circ}C$/0.5 hrs, 130$0^{\circ}C$/3 hrs 및 120$0^{\circ}C$/20 hrs였고, 이때의 화학조성은 $Gd_{2.0-2.1}$$Ti_{1.9-2.0}$$O_7$으로 소결온도 및 분위기와 무관하게 화학양론적 조성에 근접하였다. $Gd_{2}$$Zr_{2}$$O_7$의 최적 합성조건은 155$0^{\circ}C$/40 hrs 및 1$600^{\circ}C$/30 hrs였으나 화학조성은 $Gd_{1.5-2.4}$$Zr_{1.7-2.4}$$O_7$로 매우 불균질 하였다. 이 같은 불균질성은 본 연구의 최장 소결시간이었던 40시간에서 조차 평형을 이루지 못할 정도로 Gd$_2$Zr$_2$$O_7$의 생성속도가 매우 낮음을 지시하고 있다.