• Current Optics and Photonics
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• 제6권4호
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• pp.400-406
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• 2022

We numerically demonstrate that the inherent spiking behavior in the quasi-continuous-wave (QCW) operation of an Nd:YAG laser can be suppressed by adopting bias pumping. After spiking suppression, the output QCW pulses from a bias-pumped Nd:YAG laser are very stable, and they can maintain nearly the same temporal shape as that of pump pulse under different pump repetition rates and peak powers. Our study implies that bias pumping is an alternative method of spiking suppression in solid-state lasers, and the application areas of an Nd:YAG laser may be extended by bias pumping.

• Applied Science and Convergence Technology
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• 제25권6호
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• pp.108-115
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• 2016

Even if ion pumps are widely and mostly used in ultra-high vacuum (UHV) conditions, virtually every existing ion pump has its maximum pumping speed around 1E-6 mbar (1E-4 Pa). Discharge intensity in the ion pump Penning cell is defined as the current divided by pressure (I/P). This quantity reflects the rate of cathode bombardment by ions, which underlies all of the various pumping mechanisms that occur in ion pumps (chemisorption on sputtered material, ion burial, etc.), and therefore is an indication of pumping speed. A study has been performed to evaluate the influence of magnetic fields and cell dimensions on the ion pump discharge intensity and consequently on the pumping speed at different pressures. As a result, a combination of parameters has been developed in order to design and build an ion pump with the pumping speed peak shifted towards lower pressures. Experimental results with several different test set-ups are presented and a prototype of a new 200 l/s ion pump with the maximum pumping speed in the 1E-8 mbar (1E-6 Pa) is described. A model of the system has also been developed to provide a framework for understanding the experimental observations.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 한국해양정보통신학회 2007년도 추계종합학술대회
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• pp.776-780
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• 2007

In this paper, the charge pump circuit of a VPP generator for a low voltage DRAM is newly proposed. The proposed charge pump is a 2-stage cross coupled charge pump circuit. The charge transfer efficiency is improved, and Distributed Clock Inverter is located in each charge pump stage to reduce clock period so that the pumping current is increased. In addition, the precharge circuit is located at Gate node of charge transfer transistor to solve the problem which is that the Gate node is maintained high voltage because the boosted charge can't discharge, so device reliability is decreased. The simulation result is that pumping current, pumping efficiency and power efficiency is improved. The layout of the proposed VPP generator is designed using $0.18{\mu}m$ Triple-Well process.

• Proceedings of the KIEE Conference
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• 대한전기학회 1998년도 하계학술대회 논문집 A
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• pp.337-339
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• 1998

This paper deals with the design and fabrication of a novel superconducting power supply system, and characteristics have been analyzed through experiments. Superconducting power supply consists of rotating and static parts, and superconducting magnet. In this experiment, the current-pumping characteristics have been analyzed with superconducting sheets placed in parallel within the static part of the machine. In addition, in order to observe the 3-dimensional flux distribution in the superconducting sheet, several hall-sensors were placed in it. With the flux distribution acquired, the effect of the flux on the superconducting sheet during the process of current pumping have been analyzed. Also, general operational characteristics of the superconducting power supply system have been investigated on the basis of the current and voltage data and magnetic field values acquired through the experiments. In this experiment, maximum pumping current has been achieved to about 1280 amps.

• Progress in Superconductivity and Cryogenics
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• 제11권3호
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• pp.40-45
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• 2009

Many superconductor applications such as MRI and SMES must be operated in persistent current mode to eliminate the electrical ohmic loss. This paper presents the characteristic analysis of the high temperature superconducting (HTS) power supply made of YBCO coated conductor (CC). In this research, we have manufactured the HTS power supply to charge the 0.73 mH HTS double-pancake magnet made of YBCO CC. Among the all design parameters, the heater triggerring time and magnet applying time were the most important factors for the best performance of the HTS power supply. In this paper, three-dimensional simulation through finite element method (FEM) was used to study the heat transfer in YBCO CC and the magnetic field of the magnetic circuit. Based upon these results, the final operational sequence could be determined to generate the pumping current. In the experiment, the maximum pumping current reached about 16 A.

• Proceedings of the KIEE Conference
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• 대한전기학회 2000년도 하계학술대회 논문집 B
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• pp.1199-1201
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• 2000

This paper proposes a harmonics reducing circuit for fluorescent lamp inverters using hybrid type smoothing circuit with pumping and smoothing capacitors. A waveform of full-wave rectification used as a direct current power supply at fluorescent lamp inverters contains a lot of harmonic wave from inrush current which is generated near the maximum of input voltage with purse shape when voltage smoothing capacitor is charged. Therefore, in order to suppress inrush current which will result in harmonic wave. this paper proposes a method to control abrupt charging current by use of charging voltage at pumping capacitor. The suppression of harmonics generation at lamp current is confirmed through simulations.

• Proceedings of the KIEE Conference
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• 대한전기학회 1995년도 하계학술대회 논문집 A
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• pp.95-97
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• 1995

A superconducting current generator, or a superconducting rectifier(SCR) is used as a current source to energize a superconducting magnets in SMES, MRI. We selected a full-wave SCR among various SCR models and analyzed its operational characteristics by computer simulation. In process of pumping the current, the improvement of performance is dependent on how much bigger the open resistance of the switch is in comparison to load coil impedance when one of two switches become active. Faster transfer can he seen in resistive commutation mode by shortening the time elapsed for the resistance to arrive at certain level from zero state. Although recovery time for the switch has no direct effect on current pumping, optimal switch design is needed to increasing operational frequency.

• Proceedings of the Korea Water Resources Association Conference
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• 한국수자원학회 2006년도 학술발표회 논문집
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• pp.1895-1899
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• 2006

Seawater intrusion phenomenons of coastal area happen by natural or artificial factor. For example, density difference of seawater and fresh water, surface of the water change by tidal current, pumping, aggregate picking from mouth of a river, large scale reclamation in water area business etc. This research analyzed effect that groundwater TDS changed by pumping.As a result, it was expose that TDS density increases by sudden inflow of seawater when do pumping up more than $200m^3/day$. Finally, We are expected to prevent calamity by seawater intrusion in coastal area through this study and propose optimum pumping amount to use groundwater safety.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제13권10호
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• pp.822-827
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• 2000

The Si-SiO$_2$interface trap and nitride bulk trap distribution of SONOSFET(polysilicon-oxide-nitride-oxide-semiconductor field effect transistor) NVSM (nonvolatile semiconductor memory) cell is investigated by single junction charge pumping method. The device was fabricated by 0.35㎛ standard logic fabrication process including the ONO stack dielectrics. The thickness of ONO dielectricis are 24$\AA$ for tunnel oxide, 74 $\AA$ for nitride and 25 $\AA$ for blocking oxide, respectively. By the use of single junction charge pumping method, the lateral profiles of both interface and memory traps can be calculated directly from experimental charge pumping results without complex numerical simulation. The interface traps were almost uniformly distributed over the whole channel region and its maximum value was 7.97$\times$10$\^$10/㎠. The memory traps were uniformly distributed in the nitride layer and its maximum value was 1.04$\times$10$\^$19/㎤. The degradation characteristics of SONOSFET with write/erase cycling also were investigated.

• Proceedings of the IEEK Conference
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.575-576
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• 2008

This paper presents a design of a charge pumping circuit for LCD Driver IC. The charge pumping circuit consists of a control block, a VCIOUT generating block, a DDVDH generating block, a VGH/VGL generating block, and VCL generating block. It generates various higher and lower voltage than supply voltage using external control input. Simulation results show that voltages of DDVDH, VGH, VGL, and VCL satisfy the target voltage, and the output DDVDH drives the output current 7mA.