• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.9
• /
• pp.756-759
• /
• 2009

We described the growth of undoped ZnO thin films and their optical properties changing with a various growth temperature. The undoped ZnO thin films were grown on $c-Al_2O_3$ substrates using pulsed laser deposition (PLD) at room temperature, 200, 400, and $600^{\circ}C$, respectively. Field emission microscopy (FE-SEM) measurements showed that the grain size of undoped ZnO thin films are increasing as a increase of growth temperature. In addition, we were investigated that the structural and optical properties of undoped ZnO thin films by x-ray diffraction (XRD) and photoluminescence (PL) studied. Also, we could confirmed that the exciton luminescence was strongly related to charge trap by grain boundary of the samples using micro-PL measurement.

• Bulletin of the Korean Chemical Society
• /
• v.25 no.12
• /
• pp.1859-1862
• /
• 2004

Europium doped yttrium vanadate ($YVO_4$:Eu) phosphor thin films were grown using a pulsed laser deposition (PLD) technique on silicon substrate. The structural characterization carried out on a series of ($YVO_4$:Eu films at post annealing temperature in the range of 550 $^{\circ}C$-1150 $^{\circ}C$ indicating that films were preferentially (200) oriented at post annealing temperature above 950 $^{\circ}C.$ Photoluminescence of thin film increased with the increase of post annealing temperature and ambient oxygen pressure though the thin film has the powder-like surface morphology at oxygen pressure above 200 mTorr. Photoluminescence decay from $^5D_1$ level of $Eu^{3+}$ show the great concentration dependency, which can be used as a good parameter to control the composition of ($YVO_4$:Eu thin film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.2
• /
• pp.133-137
• /
• 1998

$(Pb_{0.72}La_{0.28})Ti_{0.93}O_3(PLT(28))$ thin films were fabricated by pulsed laser deposition. PLT films deposited on $Pt/Ti/SiO_2/Si$ at $600^{\circ}C$ had a preferred orientation in (111) plane and at $550^{\circ}C$ had a (100) preferred orientation. We found that (111) preferred oriented films had well grown normal to substrate surface. This PLT(28) thin films of $1{\mu}m$ thickness had dielectric properties of ${\varepsilon}_r$=1300, dielectric $loss{\fallingdotseq}0.03 $. and had charge storage density of 10 [${\mu}C/cm^2$] and leakage current density of less than $10^{-6}[A/cm^2]$ at 100[kV/cm]. These results indicated that the PLT(28) thin films fabricated by pulsed laser deposition are suitable for DRAM capacitor application.

• Proceedings of the KIEE Conference
• /
• 1999.11d
• /
• pp.851-853
• /
• 1999

DLC thin films have been fabricated by pulsed laser deposition with various deposition parameters. The characterization of fabricated thin films was performed depending on the deposition parameters. As the kinetic energies provided by deposition temperature and the laser energy density were increased, the film showed graphite properties. Structural properties of the films were investigated by Raman spectroscopy. The growth energy should be optimized to fabricate high quality DLC thin films. DLC films showed high hardness and their friction coefficient was measured to be about 0.2 regardless of the load of the ball pin.

• Proceedings of the KIEE Conference
• /
• 2004.11a
• /
• pp.54-57
• /
• 2004

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YAG laser with a wavelength of 266 m. During deposition, the experiment of the deposition of ZnO thin films has been performed for substrate temperatures in the range of $400^{\circ}C$ and flow rate of 350 sccm, films have been annealed at various substrate temperatures after deposition. After post-annealing treatment in the oxygen ambient, the structural properties of ZnO thin films were characterized by diffraction (XRD), SEM and the optical of the ZnO were characterized by photoluminescence (PL).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.11a
• /
• pp.224-227
• /
• 1999

Ferroelectric Pb(Zr$\sub$0.52/Ti$\sub$0.48/)O$_3$ thin films were fabricated by pulsed laser deposition, mainly varying process conditions such as substrate temperature, oxygen pressure, and laser energy, PZT films annealed at more than 600$^{\circ}C$ were crystallized into pure perovskite phases regardless of deposition temperatures. Lower deposition temperature of 400$^{\circ}C$ accompanied with post-annealing at 650$^{\circ}C$ resulted in denser microstructures with extremely small grains compated to those of thin films annealed at higher deposition temperatures. Hysteresis curves of thin film with small grains exhibitied good squareness and low leakage characteristics.

• Bulletin of the Korean Chemical Society
• /
• v.22 no.8
• /
• pp.914-916
• /
• 2001

• Proceedings of the KIEE Conference
• /
• 2006.07c
• /
• pp.1404-1405
• /
• 2006

Transparent ZnO thin films were deposited on quartz substrates by a KrF pulsed laser deposition (PLD) technique with different process conditions such as substrate temperature ($T_s$) and oxygen ambient pressure ($pO_2$). Surface morphology, crystal structure, and electrical properties of the ZnO films were investigated in order to characterize their thin film properties. The pulsed laser deposited ZnO films showed highly c-oriented crystalline structures depending on the process conditions: the highest FWHM (Full Width Half Maximum) value of (002) peak was observed for the ZnO film prepared at $T_{s}=550^{\circ}C$, $pO_2$=5mTorr and laser fluence of $2J/cm^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.11a
• /
• pp.11-12
• /
• 2005

[ $Pb(Zr_{0.48}Ti_{0.52})O_3$ ] (PZT) thin films were deposited on Pt(111)/Ti/$SiO_2$/Si substrates by pulsed laser deposition. In order to study the effect of different laser pulse repetition rate on the dielectric and ferroelectric properties of PZT thin films,2 Hz and 5 Hz of laser pulse repetition rate were selected. We compared the results of XRD pattern, dielectric constant and hysteresis characteristics. From the experimental data, we found that the electrical properties of PZT thin films which grown ar 2 Hz of laser pulse repetition rate were better than those which grown at 5 Hz of laser pulse repetition rate.

• Proceedings of the KIEE Conference
• /
• 2004.07c
• /
• pp.1627-1630
• /
• 2004

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YAG laser with a wavelength of 266nm. Before post-annealing treatment in the oxygen ambient, the experiment of the deposition of ZnO thin films has been performed for substrate temperatures in the range of $300{\sim}450^{\circ}C$ and flow rate of 100${\sim}$700 seem. In order to investigate the effect of post-annealing treatment of ZnO thin films, films have been annealed at various temperatures after deposition. After post-annealing treatment in the oxygen ambient, the structural properties of ZnO thin films were characterized by X-ray diffraction(XRD) and the optical properties of the ZnO were characterized by photoluminescence(PL).