• Title/Summary/Keyword: pulsed power supply

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Characteristics of Capacitor Bank Composed of Eight Paralleled Modules (300kJ${\times}$B 모듈로 구성된 커패시터 뱅크의 특성 분석)

  • Sung, G.Y.;Jung, J.W.;Choi, Y.H.;Kim, J.S.;Chu, J.H.;Lee, H.S.
    • Proceedings of the KIEE Conference
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    • 2001.07c
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    • pp.1600-1602
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    • 2001
  • A pulsed power supply of 2.4MJ capacitor bank has been developed to make investigation into electric gun technology. It is made up of eight paralleled 300kJ modules, and can supply various shape of high current pulse by changing charging voltage, inductance, capacitance, and firing time of each module. The 300kJ module has been designed and fabricated for the maximum operating voltage of 22kV, peak current of 150kA, and pulse duration of 1msec. The experiments of the modules were done, and the equivalent circuit of the module was determined. The characteristics of the module were analyzed more deeply through the circuit simulation. The experiments of the paralleled modules with inductance of 20 $\mu$H and load resistance of 100 m$\Omega$ were performed, where the modules were discharged simultaneously and/or sequentially. The results of the experiments were analyzed. The 2.4MJ capacitor bank is currently used as the pulsed power supply for the ETCG (Electro Thermal Chemical Gun) research.

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A Diagnostic Study of Pulsed Plasma Process for Reactive Deposition (반응성 증착용 펄스 플라즈마 공정의 진단)

  • Joo, Jung-Hoon
    • Journal of the Korean institute of surface engineering
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    • v.45 no.4
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    • pp.168-173
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    • 2012
  • A real-time monitoring of an immersed antenna type inductively coupled plasma (ICP) was done with optical emission spectroscopy (OES) to check the reports that sputtered atom density is decreasing as the ICP power is increased. At 10 mTorr pressure of Ar, Mg was sputtered by a bipolar pulsed power supply into 2 MHz ICP which has an insulator covered 2.5 turn antenna. Emitted light was collected in two different positions: above the target and inside the ICP region. With 100 W of Mg sputtering power, the intensities of Mg I (285.06 nm), Mg II (279.48 nm), Ar I (420.1 nm) were increased constantly with ICP power from 100 W to 600 W. At 500 W, the intensity of $Mg^+$ exceeded that of Mg under PID controlled discharge voltage of 180 V. The ratio of Mg II/Mg I was increased from 0.45 to 2.71 approximately 6 times.

Design of 60KV, 300A, 3kHz Pulse Power Supply (60kV, 300A, 3kHz 펄스전원 장치 설계)

  • Ryoo, H.J.;Jang, S.R.;Kim, J.S.;Rim, G.H.;Gussev, G.I.
    • Proceedings of the KIEE Conference
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    • 2008.07a
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    • pp.904-905
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    • 2008
  • In this paper, a novel 60kV, 300A, 3kHz pulsed power supply based on IGBT stacks is proposed. Proposed scheme consists of series connected 9 power stages to generate maximum 60kV output pulse and 15kW series resonant power inverter to charge DC capacitor voltage. Each power stages are configured as 8 series connected power cells and each power cell generates up to 830VDC, 300A pulses. Finally pulse output voltage is applied using total 72 series connected IGBTs. The synchronization of gating signal is important of series operation of IGBTs. For gating signal synchronization, full bridge inverter and pulse transformer generates on-off signals of IGBT gating and specially designed gate power circuit was used.

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Pulse Power Supply for Laser Diode (레이저 다이오드용 펄스 전원)

  • Jin, Jeong-Tae;Cha, Byeong-Heon;Lee, Sung-Man;Chang, Dae-Sik;Lee, Heung-Ho
    • Proceedings of the KIEE Conference
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    • 2006.10d
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    • pp.158-159
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    • 2006
  • This paper shows circuits and their output characteristics of a pulse power supply for pulsed laser diodes. The power supply is designed of its output voltages over than 100 V, currents 100 A, pulse repetition rates 100 Hz, and Pulse width $10{\mu}s{\sim} 500{\mu}s$.

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Design of L-Band High Speed Pulsed High Power Amplifier Using LDMOS FET (LDMOS FET를 이용한 L-대역 고속 펄스 고전력 증폭기 설계)

  • Yi, Hui-Min;Hong, Sung-Yong
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.19 no.4
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    • pp.484-491
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    • 2008
  • In this paper, we design and fabricate the L-band high speed pulsed HPA using LDMOS FET. And we propose the high voltage and high speed switching circuit for LDMOS FET. The pulsed HPA using LDMOS FET is simpler than using GaAs FET because it has a high gain, high output power and sin81e voltage supply. LDMOS FET is suitable for pulsed HPA using switching method because it has $2{\sim}3$ times higher maximum drain-source voltage(65 V) than operating drain-source voltage($V_{ds}=26{\sim}28\;V$). As results of test, the output peak power is 100 W at 1.2 GHz, the rise/fall time of output RF pulse are 28.1 ns/26.6 ns at 2 us pulse width with 40 kHz PRF, respectively.

Simulation of Active Compensated Pulsed Alternator with a Laser Flashlamp Load Based on Simplified Model

  • Yuan, Pei;Yu, Kexun;Ye, Caiyong;Ren, Zhang'ao
    • Journal of international Conference on Electrical Machines and Systems
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    • v.1 no.4
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    • pp.434-439
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    • 2012
  • This paper presents a nontraditional laser power system in which an active compensated pulsed alternator (ACPA) drives a flashlamp directly without the use of capacitor groups. As a result, the volume of the laser system is decreased because of the high energy density of the ACPA. However, the difficulty in matching the output of the alternator with the laser flashlamp is a significant issue and needs to be well analyzed. In order to solve this problem, based on the theory for ACPA, the authors propose a simplified model for the system of ACPA with flashlamp load by the way of circuit simulation. The simulation results preliminarily illuminate how the performance of the ACPA laser power system is affected. Meanwhile, the simulation results can also supply a consultation for future ACPA laser power system design and control.

Development of a pulsed power supply for Laser excitation (레이저 여기용 펄스전원의 개발)

  • 박득일
    • Proceedings of the Optical Society of Korea Conference
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    • 1991.06a
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    • pp.13-17
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    • 1991
  • 고반복 레이저의 여기전원에 적합한 3단의 자기펄스 압축 시스템을 제작하고, 시스템의 특성을 고찰하였다. 자기 펄스 압축 시스템의 특성 파라메타는 펄스 변압기의 출력과 펄스파형에 대한 포화 인덕터의 단면적, 코일의 권수가 고려되었다. 실험 결과 3단의 자기 펄스압축 시스템의 최적 조건에서 펄스 압축비와 전류 이득은 각각 22,20 이었다.

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Sputtering technique for magnesium oxide thin films (산화 마그네슘 박막의 스퍼터 제조기술)

  • Choi, Young-Wook
    • Proceedings of the KIEE Conference
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    • 2006.07c
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    • pp.1560-1561
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    • 2006
  • A high rate deposition sputtering process of magnesium oxide thin film in oxide mode has been developed using a 20 kW unipolar pulsed power supply. The power supply was operated at a maximum constant voltage of 500 V and a constant current of 40 A. The pulse repetition rate and the duty were changed in the ranges of $10{\sim}50\;kHz$ and $10{\sim}60%$, respectively. The deposition rate increased with rising incident power to the target. Maximum incident power to the magnesium target was obtained by the control of frequency, duty and current. The deposition rate of a moving state was 9 nm m/min at the average power of 1.5 kW.

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A Design and Implement of the Medical Nd:YAG Laser Firmware under in ZCC method

  • Kim, Whi-Young
    • 제어로봇시스템학회:학술대회논문집
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    • 2001.10a
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    • pp.40.3-40
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    • 2001
  • The pulsed Nd:YAG laser is the most commonly used type of solid-state laser in many fields. In material processing and medical treatment, the power density control of a laser beam Considered to be significant, which depends on the flashlamp current pulse width and pulse repetition rate. For general laser power supply to control the laser power density, the secondary of the power transformer is connected to the rectifier and filter capacitor. The output of a rectifier is applied to a switching element in the secondary of the transformer. So power supply is complicated and the loss of switching is considerably. In addition, according to increasing pulse repetition rate, charged energy of energy-storage capacitor bank is not transferred sufficiently to flashlamp, and laser output efficiency decreases. In this study, we have ...

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Characteristics of Non-Thermal Plasma Process for Air Pollution Control (대기오염 물질 저감을 위한 저온 플라즈마 반응공정의 특성)

  • 송영훈;신동남;신완호;김관태;최연석;최영석;이원남;김석준
    • Journal of Korean Society for Atmospheric Environment
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    • v.16 no.3
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    • pp.247-256
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    • 2000
  • Basic characteristics of non-thermal plasma process to remove C2H4 and NO have been experimentally investigated with a packed-bed type reactor and an ac power supply. The performance of the non-thermal plasma generated by ac power supply was compared with that of a wire-plate type reactor equipped with a pulsed power supply. The result shows that the non-thermal plasma can be effectively generated with an AC power supply that can be easily fabricated with conventional techniques. In order to understand the basic reaction mechanisms of the non-thermal plasma process, parametric tests for different carrier gases(air and nitrogen) and for different reaction pathways have been performed. The test results show that O3 generated by non-thermal plasma plays an dominant role to oxidize C2H4 and NO over N and O radicals when these pollutant gases are carried by dry air under room temperature condition. Experimental observations, however, indicate that N and O radicals can significantly affect on the removal process of the pollutant gases under certain conditions.

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