• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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• pp.54-57
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• 2004

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YAG laser with a wavelength of 266 m. During deposition, the experiment of the deposition of ZnO thin films has been performed for substrate temperatures in the range of $400^{\circ}C$ and flow rate of 350 sccm, films have been annealed at various substrate temperatures after deposition. After post-annealing treatment in the oxygen ambient, the structural properties of ZnO thin films were characterized by diffraction (XRD), SEM and the optical of the ZnO were characterized by photoluminescence (PL).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.317-318
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• 2007

In this study, transparent conducting oxide indium zinc oxide (IZO) thin films were deposited by pulsed laser deposition (PLD) Process as a function of the deposition time on the glass substrates at $400^{\circ}C$. The crystal structures, electrical and optical properties of IZO films analyzed by XRD, AFM, and UV spectrometer. High quality IZO thin film with the resistivity of $9.1{\times}10^{-4}$ ohm cm and optical transmittance over 85% was obtained for sample when deposition time was 15min. Thin films with the preferred orientations along the c axis were observed as the deposition time increased.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2004년도 동계학술연구발표회 논문개요집
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• pp.227-228
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• 2004

• 전기의세계
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• 제46권4호
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• pp.28-33
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• 1997

본고에서는 현재까지 연구되어온 강유전 박막 물질과 이들의 응용분야들을 개관하고, 또한 비교적 최근에 강유전체 박막 형성에 적용된 pulsed laser deposition(PLD)법을 소개하고, 이를 이용한 강유전체 박막의 제작 및 응용에 대한 연구 동향을 고찰하고자 한다.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2002년도 추계총회 및 연구발표회 초록집
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• pp.113.2-113
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• 2002

• 한국재료학회:학술대회논문집
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• 한국재료학회 2004년도 춘계학술발표대회 및 제6회 신소재 심포지엄
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• pp.76-76
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• 2004

• 한국진공학회지
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• 제9권3호
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• pp.249-253
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• 2000

차세대 마이크로파 유전체 소자에 응용하기 위한 $MgTiO_3$ 박막을 펄스 레이저 증착법(PLD, pulsed laser deposition)을 이용하여 400-$500^{\circ}C$에서 비정질 상태로 실리콘 기판 위에 성장시킨 후 전기적 특성을 분석하였다. PLD로 증착된 $MgTiO_3$ 박막의 전기적 특성은 성장시 온도에 의존하였다. 즉, 증착 온도가 낮아짐에 따라 $MgTiO_3$ 박막 내부에 존재하는 이상정전하 결함 밀도가 증가하였으며, 이들 결함과 실리콘 기판과의 전하교환에 의하여 High Frequency(HF) C-V 곡선이 음의 방향으로 이동하는 현상이 관측된 것으로 사료된다. 또한, 증착 온도간 HF C-V 곡선 이동 폭 및 이상정전하 밀도는 ~l00$\AA$ 두께의 $SiO_2$ 중간층을 사용할 경우에 현저히 감소함을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.55-56
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• 2005

The properties of phosphorus doped ZnO thin films deposited on (001) sapphire substrates by pulsed laser deposition (PLD) were investigated depending on various deposition conditions. The phosphorus (P) doped ZnO target was composed of ZnO + x wt% Al (x=1, 3, 5). The structural, electrical and optical properties of the ZnO thin films were measured by X-ray diffraction (XRD), Hall measurements and photoluminescence (PL). As the deposition temperature optimized, the electrical properties of the phosphorus doped ZnO (ZnO:P) layer showed a electron concentration of $7.76\times10^{16}/cm^3$, a mobility of 10.225 $cm^2/Vs$, a resistivity of 7.932 $\Omega$cm. It was observed the electrical property of the film was changed by dopant activation effect as target variations and deposition conditions.

• 한국전기전자재료학회논문지
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• 제24권2호
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• pp.108-111
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• 2011

The semiconducting material of ZnO in II-VI group was well known as its good application for photo electronics, chemical sensors and field effect transistors due to the remarkable optical properties with wide energy band gap and great ionic reactivities. Up to now the growth of a good quality of ZnO film has been issued for better performances. Even though there were many deposition methods for making ZnO films, pulse laser deposition methods have been preferred for high crystalline films. In this report, the ZnO film was also created by pulsed laser deposition technique which also showed high crystalinity. By controlling several factors when deposited, it was investigated that the optimal condition for ZnO film formation. Mainly, oxygen partial pressures and growth temperatures were changed when ZnO films were synthesized and followed the characterization by HRXRD and AFM.

• 한국전기전자재료학회논문지
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• 제13권1호
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• pp.66-74
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• 2000

The structural and electrical characteristics of SBT thin films, fabricated on Pt/Ti/SiO\ulcorner/Si substrates by a pulsed laser deposition(PLD), were investigated to develop ferroelectric thin films for capacitor lay-ers of FRAM. EFfects of target composition on the characteristics of SBT thin films were examined. Target were prepared by mixed oxide method, and composition of Sr/Bi/Ta on SBT was changed to 1/2/2, 1/2.4/2, 1/2.8/2, 0.8/2/2 and 1.2/2/2. SBt thin films were fabricated, as a function of substrate temperature and oxygen pressure, by PLD. The optimized ocndition, to fabricate high quality SBT thin films, was 700 $^{\circ}C$ of substrate temperature, 200 mTorr of oxygen pressure, and 2 J/$\textrm{cm}^2$ of laser energy density. Maximum remnant value(2Pr) of 9.0 $\mu$C/$\textrm{cm}^2$, coercive field value(Ec) of 50 kV/cm, dielectric constant value of 166, and leakage current densities of <10\ulcorner A/$\textrm{cm}^2$ were observed for the films with 1/2/2 composition, which was prepared at the above PLD condition.