• Title/Summary/Keyword: pulsed laser deposition(PLD)

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Effect of Targets on Synthesis of Aluminum Nitride Thin Films Deposited by Pulsed Laser Deposition (펄스레이저법으로 증착 제조된 AlN박막의 타겟 효과)

  • Chung, J.K.;Ha, T.K.
    • Transactions of Materials Processing
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    • v.29 no.1
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    • pp.44-48
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    • 2020
  • Aluminum nitride (AlN), as a substrate material in electronic packaging, has attracted considerable attention over the last few decades because of its excellent properties, which include high thermal conductivity, a coefficient of thermal expansion that matches well with that of silicon, and a moderately low dielectric constant. AlN films with c-axis orientation and thermal conductivity characteristics were deposited by using Pulsed Laser Deposition (PLD). The epitaxial AlN films were grown on sapphire (c-Al2O3) single crystals by PLD with AlN target and Y2O3 doped AlN target. A comparison of different targets associated with AlN films deposited by PLD was presented with particular emphasis on thermal conductivity properties. The quality of AlN films was found to strongly depend on the growth temperature that was exerted during deposition. AlN thin films deposited using Y2O3-AlN targets doped with sintering additives showed relatively higher thermal conductivity than while using pure AlN targets. AlN thin films deposited at 600℃ were confirmed to have highly c-axis orientation and thermal conductivity of 39.413 W/mK.

Formation mechanism of silicon nanocrystals fabricated by pulsed laser deposition (펄스레이저 증착법에 의한 실리콘 나노결정 형성 메커니즘)

  • Kim, Jong-Hoon;Jeon, Kyeong-Ah;Kim, Gun-Hee;Lee, Sang-Yeol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.162-164
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    • 2004
  • Nanocrystalline silicon(nc-Si) thin films on the silicon substrates have been prepared by pulsed laser deposition(PLD). The optical and structural properties of films have been investigated depending on deposition temperature, annealing, and oxidation process. When the deposition temperature increased, photoluminescence(PL) intensity abruptly decreased and peaks showed red shift. Annealing process could reduce the number of defect centers. Oxidation had a considerable effect upon the formation and isolation of the nanocrystals. These results indicate that the formation mechanism of Si nanocrystals grown by PLD can be explained by three steps of growth, passivating defect centers, and isolation, sequentially.

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Light emission properties of ZnO thin films grown by pulsed laser deposition (펄스 레이저 증착법으로 제작한 ZnO 박막의 발광 특성)

  • 배상혁;이상렬
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.539-542
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    • 2000
  • ZnO thin films for light emission device have been deposited on sapphire and silicon substrates by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of 355 nm. In order to investigate the emission properties of ZnO thin films, PL measurements with an Ar ion laser as a light source using an excitation wavelength of 351 nm and a power of 100 mW are used. All spectra were taken at room temperature by using a grating spectrometer and a photomultiplier detector. ZnO exhibited PL bands centered around 390, 510 and 640 nm, labeled near ultra-violet (UV), green and orange bands. Structural properties of ZnO thin films are analized with X-ray diffraction (XRD).

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The Variation of the Characteristics of DLC Thin films by Pulsed Laser Deposition (레이저 증착변수에 의한 다이아몬드상 카본 박막 특성변화)

  • Sim, Gyeong-Seok;Lee, Sang-Ryeol
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.5
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    • pp.344-348
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    • 1999
  • Diamond like carbon(DLC) thin films possesed not only marvelous material characteristics such as large thermal conductivity, high hardness and being chemically inert, but also possesed negative electron affinity (NEA) properties. The NEA is an extremely desirable property of the material used in microelestronics and vacuum microelestronics device. DLC films were fabricated by pulsed laser deposition(PLD). Theeffect of the laser energy density and the substrate temperature on the properies of DLC films was investigated. The experiment was accomplished at temperatures in the range of room temperature to $600^{\circ}C$. The laser energy density was in the range of 6 $J/cm^2$ to 16 $J/cm^2$.

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Structural and Optical Properties of ZnO Thin Films Grown at Various Plume-Substrate Angles by Pulsed Laser Deposition (펄스레이저 증착법에서 기판-플룸 각 변화가 ZnO 박막의 구조 및 광학적 특성에 미치는 영향)

  • 강정석;강홍성;김재원;이상렬
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.3
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    • pp.329-332
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    • 2004
  • ZnO thin films were grown with different plume-substrate angles by pulsed laser deposition (PLD) to control the amount of ablated species arriving on a substrate per laser shot. The angles between plume propagation direction and substrate plane (P-S angle) were 0$^{\circ}$, 45$^{\circ}$ and 90$^{\circ}$. The growth time was changed in order to adjust film thickness. From the XRD pattern exhibiting a dominant (002) and a minor (101) XRD peak of ZnO, all films were found to be well oriented along c-axis. From the AFM image, it was found that the grain size of ZnO thin film was increased, as P-S angle decreased. UV intensity investigated by PL (Photoluminescence) increased as P-S angle decreased.

Study on the fabrication of DLC thin films by pulsed laser deposition (펄스 레이저 증착법에 의한 DLC 박막 제작 연구)

  • Jeong, young-Sik;Eun, Dong-Seog;Lee, Sang-Yeol;Jung, Hae-Suk;Park, Hung-Ho
    • Proceedings of the KIEE Conference
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    • 1997.11a
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    • pp.285-287
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    • 1997
  • We have deposited hydrogen-free diamond-like carbon (DLC) films by pulsed laser deposition of graphite. Pulsed laser deposition (PLD) can be utilized to generate films with desired properties quite different from those of the starting material. Since DLC films grown by PLD using turbo pump are perpared without hydrogen, they have a higher density and a higher index of refraction than the hydrogenated DLC films. In this study, effects of the substrate temperature and laser energy density on the properties of DLC films were systematically investigated. The structure and properties of the films have been studied by scanning electron microscopy (SEM), Fourier Transform Infrared (FT-IR), X-ray diffraction (XRD), and Raman spectroscopy.

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Electrical Properties of the (Ba,Sr)TiO$_3$ Thin Films Prepared by PLD (PLD법으로 제작된 (Ba,Sr)TiO$_3$박막의 전기적 특성)

  • 주학림;김성구;마석범;장낙원;박정흠;박창엽
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.125-128
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    • 1999
  • (Ba$_{0.6}$Sr$_{0.4}$)TiO$_3$(BST) thin films were fabricated with different deposition temperature by Pulsed Laser Deposition(PLD). This BST thin films showed a maximum dielectric constant value of $\varepsilon$$_{r}$=~684 and dielectric loss was ~0.01 when substrate temperature was 75$0^{\circ}C$. Charge storage density of BST thin film was 4.733 [$\mu$C/$\textrm{cm}^2$] and estimated charging time was 0.15 nsec. Leakage current density of BST thin film was below 10$^{-7}$ [A/$\textrm{cm}^2$] at 3V. 3V.V.

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Oxygen Pressure Dependence of Structural and Electrical Characteristics of PLZT Thin Films Prepared by a PLD (PLD 법으로 제작된 PLZT 박막의 산소압에 따른 구조 및 전기적 특성)

  • Jang, Nak-Won
    • Journal of Advanced Marine Engineering and Technology
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    • v.30 no.8
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    • pp.927-933
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    • 2006
  • The structural and electrical characteristics of PLZT thin films fabricated onto $Pt/IrO_2/Ir/Ti/SiO_2/Si$ substrates by a pulsed laser deposition were investigated to develop the high dielectric thin films for capacitor layer of semiconductor memory devices The slim region 14/50/50 PLZT thin films were fabricated by PLD and estimated the characteristics for memory application 14/50/50 PLZT thin films have crystallize into perovskite structure at the $600^{\circ}C$ deposition temperature, 200 mTorr of oxygen pressure, and 2 $J/cm^2$ of laser energy density. In this condition PLZT thin films had the dielectric constant as high as 985, storage charge density 8.17 ${\mu}C/cm^2$ and charging time 0.20 ns. Leakage current density was less than $10^{-10}A/cm^2$ up to 5 V bias voltage.

ZnO Nanostructure Formed by Off-axis Pulsed Laser Deposition (Off-axis 펄스레이저 증착법으로 성장된 ZnO 나노구조에 관한 연구)

  • 강정석;강홍성;김재원;이상렬
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.3
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    • pp.319-322
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    • 2004
  • ZnO nanostructures were formed on a Si substrate by off-axis pulsed laser deposition(PLD) system in which a substrate plane was tilted toward a plume propagation direction. Atomic force microscopy (AFM) showed islands of 20∼40 nm width. From the x-ray diffraction (XRD) pattern exhibiting only (002) ZnO peak, the islands observed in AFM image were found to well crystallized. Optical bandgap enlargement from 3.26 eV to 3.35 and 3.47 eV due to the quantum size effect of ZnO nanostructures were observed by Photoluminescence (PL) at room temperature.