• Title/Summary/Keyword: proton beam irradiation

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Proton induced Effects on Commercial Single-mode Optical Fibers (상용 단일모드 광섬유의 양성자 영향)

  • Kim, Jong-yeol;Kim, Young-woong;Ryu, Guk-been;Hwang, Young-gwan;Lee, Min-Woong;Song, Keun-young
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2022.10a
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    • pp.623-625
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    • 2022
  • In this paper, the proton induced attenuation characteristics were evaluated for 5 types of commercial single-mode optical fibers using a proton accelerator. The proton beam used in the irradiation test has a high energy of 100 MeV class, and the test was performed by setting the uniformity of the beam irradiation area to 10% or less. According to the type of optical fiber (internal material, impurities), the radiation induced attenuation by the proton irradiation showed a noticeable difference.

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Effect of Proton Irradiation on the Magnetic Properties of Antiferromagnet/ferromagnet Structures

  • Kim, Dong-Jun;Park, Jin-Seok;Ryu, Ho Jin;Jeong, Jong-Ryul;Chung, Chang-Kyu;Park, Byong-Guk
    • Journal of Magnetics
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    • v.21 no.2
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    • pp.159-163
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    • 2016
  • Antiferromagnet (AFM)/ferromagnet (FM) bilayer structures are widely used in the magnetic devices of sensor and memory applications, as AFM materials can induce unidirectional anisotropy of the FM material via exchange coupling. The strength of the exchange coupling is known to be sensitive to quality of the interface of the AFM/FM bilayers. In this study, we utilize proton irradiation to modify the interface structures and investigate its effect on the magnetic properties of AFM/FM structures, including the exchange bias and magnetic thermoelectric effect. The magnetic properties of IrMn/CoFeB structures with various IrMn thicknesses are characterized after they are exposed to a proton beam of 3 MeV and $1{\sim}5{\times}10^{14}ions/cm^2$. We observe that the magnetic moment is gradually reduced as the amount of the dose is increased. On the other hand, the exchange bias field and thermoelectric voltage are not significantly affected by proton irradiation. This indicates that proton irradiation has more of an influence on the bulk property of the FM CoFeB layer and less of an effect on the IrMn/CoFeB interface.

Application of CRAMPS for a Phase Transition in H+-ion irradiated TlH2PO4

  • Kim, Se-Hun;Han, J.H.;Lee, Cheol-Eui;Lee, Kwang-Sei;Kim, Chang-Sam;Dalal, N.S.;Han, Doug-Young
    • Journal of the Korean Magnetic Resonance Society
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    • v.14 no.2
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    • pp.134-143
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    • 2010
  • We studied the hydrogen-bonded $TlH_2PO_4$ (TDP) ferroelectrics treated with the proton-beam bombardment. The TDP material was irradiated with 1-MeV proton beam at a dose of $10^{15}/cm^2$. In order to analyze the hydrogen environment in TDP, we carried out the $^1H$ high resolution nuclear magnetic resonance (NMR) - i.e., Combined Rotation And Multiple Pulse Spectroscopy (CRAMPS) measurement. The isotropic chemical shift of hydrogen indicates its displacive property is related to the $PO_4$ lattice deformation which occurs throughout the antiferroelectric-, the ferroelastic- and the paraelastic-phase transitions. The temperature dependence of $\sigma_{iso}$ reveals the electronic charge redistribution is induced by the proton-beam irradiation and the elastic property.

Preparation of photoresist-derived carbon micropatterns by proton ion beam lithography and pyrolysis

  • Nam, Hui-Gyun;Jung, Jin-Mook;Hwang, In-Tae;Shin, Junhwa;Jung, Chang-Hee;Choi, Jae-Hak
    • Carbon letters
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    • v.24
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    • pp.55-61
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    • 2017
  • Carbon micropatterns (CMs) were fabricated from a negative-type SU-8 photoresist by proton ion beam lithography and pyrolysis. Well-defined negative-type SU-8 micropatterns were formed by proton ion beam lithography at the optimized fluence of $1{\times}10^{15}ions\;cm^{-2}$ and then pyrolyzed to form CMs. The crosslinked network structures formed by proton irradiation were converted to pseudo-graphitic structures by pyrolysis. The fabricated CMs showed a good electrical conductivity of $1.58{\times}10^2S\;cm^{-1}$ and a very low surface roughness.

Effect of Proton Beam Radiation on Bulbil Yield and Gibberellins of Chinese Yam (Dioscorea opposita Thunb.)

  • Kim, Sang-Kuk;Choi, Hong-Jib;Kim, Kye-Ryung;Lee, In-Jung;Kim, Hak-Yoon
    • KOREAN JOURNAL OF CROP SCIENCE
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    • v.56 no.3
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    • pp.250-254
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    • 2011
  • The study was carried out to evaluate the affect of proton beam radiation on production of bulbil and tuber including change of endogenous gibberellins, of Dioscorea opposita Thunb. The yield of bulbils and tubers from non- and irradiated D. opposita Thunb at doses of 5, 10, 15 and 20 Gy were determined. Endogenous gibberellins were also quantified by GC/MS analysis. D. opposita tubers irradiated at 15 Gy produced higher bulbil production than non-irradiated plants. Enlarged bulbil (above size diameter 4 mm) was significantly increased at 15 Gy. Bioactive endogenous $GA_4$ was dominant in bulbils and tubers irradiated with proton beam rather than $GA_1$. Major gibberellins biosynthetic pathways in bulbils and tubers of D. opposita plants were non C-13 hydroxylation route. From the results of this study, 15 Gy proton beam radiation was suggested as an optimal dose that can produce high amounts of bulbil for mass production of D. opposita plant.

Fabrication of a fast Switching Thyristor by Proton Irradiation Method (양성자 조사법에 의한 고속스위칭 사이리스터의 제조)

  • Kim, Eun-Dong;Zhang, Changli;Kim, Sang-Cheol;Kim, Nam-Kyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.12
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    • pp.1264-1270
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    • 2004
  • A fast switching thyristor with a superior trade-off property between the on-state voltage drop and the turn-off time could be fabricated by the proton irradiation method. After making symmetric thyristor dies with a voltage rating of 1,600 V from 350 $\mu$m thickness of 60 $\Omega$ㆍcm NTD-Si wafer and 200 $\mu$m width of n-base drift layer, the local carrier lifetime control by the proton irradiation was performed with help of the HI-13 tandem accelerator in China. The thyristor samples irradiated with 4.7 MeV proton beam showed a superior trade-off relationship of $V_{TM}$ = 1.55 V and $t_{q}$ = 15 $\mu$s attributed to a very narrow layer of short carrier lifetime(~1 $\mu$s) in the middle of its n-base drift region. To explain the small increase of $V_{TM}$ , we will introduce the effect of carrier compensation at the low carrier lifetime region by the diffusion current.ffusion current.t.

Investigation of Various Radiation Proton Energy Effect on n, p Type Silicon by Positron Annihilation Method (양전자 소멸 측정법으로 양성자 조사에너지 변화에 대한 n, p형 실리콘 구조 특성)

  • Lee, Chong Yong
    • Journal of the Korean Vacuum Society
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    • v.22 no.6
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    • pp.341-347
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    • 2013
  • The n-type and p-type silicon samples were exposed by 40.0, 3.98 MeV proton beams ranging between 0 to $20.0{\times}10^{13}protons/cm^2$. Coincidence Doppler Broadening Positron Annihilation Spectroscopy (CDBPAS) were applied to study of defect characteristics of p type and n type silicon samples. In this investigation the numerical analysis of the spectra was employed to the determination of the shape parameter, S, defined as the ratio between the amount of counts in a central portion of the gamma spectrum and the total counts of whole gamma spectrum. The S-parameter values strongly depend on the irradiated proton beam that indicated the defects generate more, rather than the energy intensity. 40 MeV irradiated proton beam in the n-type silicon at $20.0{\times}10^{13}protons/cm^2$ was larger defects than 3.98 MeV irradiated proton beam. It was analysis between the proton irradiation beams and the proton intensities of the irradiation. Because of the Bragg peak, SRIM results shows mainly in a certain depth of the sample to form the defect by the proton irradiation, rather than the defects to appear for the entire sample.

Verification of Periodical Calibration for Iso-center Positions using Quality Assurance System for Irradiation Equipment Position Established at PMRC

  • Yasuoka, Kiyoshi;Ishikawa, Satoko
    • Proceedings of the Korean Society of Medical Physics Conference
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    • 2002.09a
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    • pp.192-194
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    • 2002
  • We present the results on the calibration of iso-center positions using the quality assurance system established at PMRC for determination of center position in X-ray and proton irradiation fields. Details on the system are presented in another presentation in this session. The equipment in the system is mounted on a patient treatment bed in each proton exposure room, G1 or G2. A center of a stainless ball on the equipment is set at a cross of laser markers located around the iso-center and fixed on the room and on the snout in the gantry. A proton beam or an X-ray beam is exposed onto the ball through a brass collimator of 100 mm ${\times}$ 100 mm and projected onto the imaging plate set at I cm behind the ball. On the axis perpendicular to the thrust axis of the gantry on the imaging plate, a distance between a center of the collimator image and a center of the ball image varies as a cosine function of gantry angles unless the ball is set on the iso-center. An amplitude of the cosine curve shows the distance between the ball and the iso-center, an offset the offset of the collimator, and a phase shift at a zero crossing point the ball direction viewed from the iso-center. We present the relation among the iso-center position, the laser maker position, and the center of proton and X-ray irradiation fields. Its stability and its reproducibility are discussed.

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Room-Temperature Luminescence from Ion Beam or Atmospheric Pressure Plasma-Treated SrTiO3

  • Song, J.H.;Choi, J.M.;Cho, M.H.;Choi, E.J.;Kim, J.;Song, J.H.
    • Applied Science and Convergence Technology
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    • v.23 no.5
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    • pp.261-264
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    • 2014
  • $SrTiO_3$ (STO) single crystal irradiated with a 3-MeV proton beam exhibits blue and green mixed luminescence. However, the same proton beam when used to irradiate STO with a very thin layer of deposited Pt does not show any luminescence. This Pt layer prevents any damage which may otherwise be caused by arcing, which stems from the accumulated surface voltage of tens of kV due to the charge induced by secondary electrons on the surface of the insulator during the ion beam irradiation process. Hence, the luminescence of ion-irradiated STO originates from the modification of the STO surface layer caused by arcing rather than from any direct ion beam irradiation effect. STO treated with atmospheric-pressure plasma, a simple and cost-effective method, also exhibits the same type of blue and green mixed luminescence as STO treated with an ion beam, as the plasma also creates a layer of surface damage due to arcing.

Multi-slit prompt-gamma camera for locating of distal dose falloff in proton therapy

  • Park, Jong Hoon;Kim, Sung Hun;Ku, Youngmo;Kim, Chan Hyeong;Lee, Han Rim;Jeong, Jong Hwi;Lee, Se Byeong;Shin, Dong Ho
    • Nuclear Engineering and Technology
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    • v.51 no.5
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    • pp.1406-1416
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    • 2019
  • In this research, a multi-slit prompt-gamma camera was developed to locate the distal dose falloff of the proton beam spots in spot scanning proton therapy. To see the performance of the developed camera, therapeutic proton beams were delivered to a solid plate phantom and then the prompt gammas from the phantom were measured using the camera. Our results show that the camera locates the 90% distal dose falloff (= d90%), within about 2-3 mm of error for the spots which are composed $3.8{\times}10^8$ protons or more. The measured location of d90% is not very sensitive to the irradiation depth of the proton beam (i.e., the depth of proton beam from the phantom surface toward which the camera is located). Considering the number of protons per spot for the most distal spots in typical treatment cases (i.e., 2 Gy dose divided in 2 fields), the camera can locate d90% only for a fraction of the spots depending on the treatment cases. However, the information of those spots is still valuable in that, in the multi-slit prompt-gamma camera, the distal dose falloff of the spots is located solely based on prompt gamma measurement, i.e., not referring to Monte Carlo simulation.