• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.318-321
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• 2009

We have studied transparent top gate Al-Zn-Sn-O (AZTO) TFTs with an $Al_2O_3$ protective layer (PL) on an active layer. We also fabricated a transparent 2.5 inch QCIF+AMOLED display panel using the AZTO TFT back-plane. The AZTO active layers were deposited by RF magnetron sputtering at room temperature and the PL was deposited by ALD with two different processes. The mobility and subthreshold slope were superior in the cases of the vacuum annealing and the oxygen plasma PL compared to the $O_2$ annealing and the water vapor PL, however, the bias stability was excellent for the TFTs of the $O_2$ annealing and the water vapor PL.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.9
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• pp.527-532
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• 2000

The performance of ac plasma display panels (PDP) is influenced strongly by the surface glow discharge characteristics on the MgO thin films. This paper deals with the surface glow discharge characteristics and some physical properties of MgO thin films prepared by reactive RF planar unbalanced magnetron sputtering in connection with ac PDP. The samples prepared with dc bias voltage of -10V showed lower discharge voltage and lower erosion rate byion bombardment than those samples prepared by conventional magnetron sputtering or E-beam evaporation. The main factor that improves the discharge characteristics by bias voltage is considered to be due to the morphology changes or crystal structure of the MgO thin film by ion bombardement during deposition process.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.205.2-205.2
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• 2014

The effects of ion beam mixing of a SiC film coated on super alloys (hastelloy X substrates) were studied, aiming at developing highly sustainable materials at above $900^{\circ}C$ in decomposed sulfuric acid gas (SO2/SO3/H2O) channels of a process heat exchanger. The bonding between two dissimilar materials is often problematic, particularly in coating metals with a ceramics protective layer. A strong bonding between SiC and hastelloy X was achieved by mixing the atoms at the interface by an ion-beam: The film was not peeled-off at ${\geq}900^{\circ}C$, confirming excellent adhesion, although the thermal expansion coefficient of hastelloy X is about three times higher than that of SiC. Instead, the SiC film was cracked along the grain boundary of the substrate at above $700^{\circ}C$. At ${\geq}900^{\circ}C$, the film was crystallized forming islands on the substrate so that a considerable part of the substrate surface could be exposed to the corrosive environment. To cover the exposed areas and cracks multiple coating/IBM processes have been developed. An immersion corrosion test in 80% sulfuric acid at $300^{\circ}C$ for 100 h showed that the weight retain rate was gradually increased when increasing the processing time.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.364.2-364.2
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• 2014

Magnesium oxide (MgO) thin films have attracted great scientific and technological interest in recent decades. Because of its distinguished properties such as a wide band gap (7.2 eV), a low dielectric constant (9.8), a low refractive index, an excellent chemical, and thermal stability (melting point=$2900^{\circ}C$), it is widely used as inorganic material in diverse areas such as fire resistant construction materials, optical materials, protective layers in plasma display panels, buffer layers of multilayer electronic/photonic devices, and perovskite ferroelectric thin films. Precursor used in the ALD requires volatility, stability, and low deposition temperature. Precursors using a heteroleptic ligands with different reactivity have advantage of selective reaction of the heteroleptic ligands on substrate during ALD process. In this study, we have synethesized new heteroleptic magnesium precursors ${\beta}$-diketonate and aminoalkoxide which have been widely used for the development of precursor because of the excellent volatility, chelating effects by increasing the coordination number of the metal, and advantages to synthesize a single precursor. A newly-synthesized Mg(II) precursor was adopted for growing MgO thin films using ALD.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.338-339
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• 2005

The wider surface of the aluminum foil, electrochemically very important and it is necessary to increase the surface area. A study has been made of the fabrication condition for etching cube texture of high purity aluminium foil and of electrochemical etching of the aluminium foil. In the present work, it is shown there exists a relation between the influence of the pre-treatment time in the NaOH & HCI solution and $H_2SO_4$ concentration in the conversion solution. Also effect of temperature during AC etching was also studied. Result of the etched aluminum film is shown in the typical SEM images. Its electrochemical characteristics were investigated by cyclic voltammetry. And effects of current density and frequency is also reported. Cyclic voltammogram showed that the protective oxide film was formedon the inner surfaces of etch pit. the frequency influence resistance of oxide film in AC etching.

• Journal of the Korean institute of surface engineering
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• v.47 no.1
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• pp.7-12
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• 2014

The characteristics of oxidation for the Zry-4 was measured in the $800^{\circ}C$ and high steam pressure (50 bar, 75 bar, 100 bar) conditions, using an apparatus for high pressure steam oxidation. The effect of accelerated oxidation by high-pressure steam was increased more than 60% in hydrogen-charged cladding than normal cladding. This difference between hydrogen charged claddings and normal claddings tends to be larger as the higher pressure. The accelerated oxidation effect of hydrogen charging cladding is regarded as the hydrogen on the metal layer affects the formation of the protective oxide layer. The creation of the sound monoclinic phase in Zry-4 oxidation influences reinforcement of corrosion-resistance of the oxide layer. The oxidation is estimated to be accelerated due to the creation of equiaxial type oxide film with lower corrosion resistance than that of columnar type oxide film. When tetragonal oxide film transformed into the monoclinic oxide film, surface energy of the new monoclinic phase reduced by hydrogen in the metal layer.

• Journal of the Korean Ceramic Society
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• v.43 no.8 s.291
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• pp.492-497
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• 2006

SiC coating has been introduced as protective layer in TRISO nuclear fuel particle of High Temperature Gas cooled Reactor (HTGR) due to excellent mechanical stability at high temperature. In order to inhibit the failure of the TRISO particles, it is important to evaluate the fracture strength of the SiC coating layer. ]n present work, thin silicon carbide coating was fabricated using chemical vapor deposition process with different microstructures and thicknesses. Processing condition and surface status of substrate.affect on the microstructure of SiC coating layer. Sphere indentation method on trilayer configuration was conducted to measure the fracture strength of the SiC film. The fracture strength of SiC film with different microstructure and thickness were characterized by trilayer strength measurement method nanoindentation technique was also used to characterize the elastic modulus and th ε hardness of the SiC film. Relationships between microstructure and mechanical properties of CVD SiC thin film were discussed.

• Corrosion Science and Technology
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• v.22 no.6
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• pp.399-407
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• 2023

This study investigated the formation of oxide films on 6061 aluminum (Al) alloy and their impacts on corrosion resistance efficiency by regulating anodization voltage. Despite advantageous properties inherent to Al alloys, their susceptibility to corrosion remains a significant limitation. Thus, enhancing corrosion resistance through developing protective oxide films on alloy surfaces is paramount. The first anodization was performed for 6 h with an applied voltage of 30, 50, or 70 V on the 6061 Al alloy. The second anodization was performed for 0.5 h by applying 40 V after removing the existing oxide film. Resulting oxide film's shape and roughness were analyzed using field emission-scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). Wettability and corrosion resistance were compared before and after a self-assembled monolayer (SAM) using an FDTS (1H, 1H, 2H, 2H-Perfluorodecyltrichlorosilane) solution. As the first anodization voltage increased, the final oxide film's thickness and pore diameter also increased, resulting in higher surface roughness. Consequently, all samples exhibited superhydrophilic behavior before coating. However, contact angle after coating increased as the first anodization voltage increased. Notably, the sample anodized at 70 V with superhydrophobic characteristics after coating demonstrated the highest corrosion resistance performance.

• Corrosion Science and Technology
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• v.7 no.1
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• pp.40-44
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• 2008

Passive metal forms an interfacial diffuse layer on the surface of passive film by its reaction with $H^+$ or $OH^-$ ions in solution depending on solution pH. There is a critical pH, called pH point of iso-selectivity ($pH_{pis}$) at which the nature of the diffuse layer is changed from the anion-permeable at pH<$pH_{pis}$ to the cation-permeable at pH>$pH_{pis}$. The $pH_{pis}$ for a passivated Fe was determined by examining the effects of pH on the thickness of passive film and on the dissolution reaction occurring on the passive film under a gavanostatic reduction in borate-phosphate buffer solutions at various pH of 7~11. The steady-state thickness of passive film formed on Fe showed the maximum at pH 8.5~9, and further the nature of film dissolution reaction was changed from a reaction producing $Fe^{3+}$ ion at $pH\leq8.5$ to that producing $FeO_2{^-}$ at $pH\geq9$, suggesting that the $pH_{pis}$ of Fe is about pH 8.5~9. In addition, the passive film formed at pH 8.5~9, $pH_{pis}$, was found to be the most protective with the lowest defect density as confirmed by the Mott-Schottky analysis. Pitting potential was decreased with increasing $Cl^-$ concentration at $pH\leq8.5$ due probably to the formation of anion permeable diffuse layer, but it was almost constant at $pH\geq9$ irrespective of $Cl^-$ concentration due primarily to the formation of cation permeable diffuse layer on the film, confirming again that $pH_{pis}$ of Fe is 8.5~9.

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.197-202
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• 2001

M $g_{1-x}$ Z $n_{x}$O thin films with various composition x of ZnO were fabricated by a RF magnetron sputtering method, which is expected to improve the electro-optical properties of the conventional MgO protective layer for AC-PDP. Test panels with the $Mg_{1-x}$Z $n_{x}$O protective layer have been fabricated in order to investigate the effects of ZnO doping on the electrical characteristics of devices such as the discharge voltages and the memory gain. Experimental results revealed that test panels with the $Mg_{1-x}$Z $n_{x}$O(x=0.5at%) protective layer show lower firing and sustain voltages than those seen in panels with MgO protective layer by 20V. resulting in an increasement of the memory coefficient. In addition, it was found that test panels with the $Mg_{1-x}$Z $n_{x}$O protective layer show higher discharge intensity, i. e., higher plasma density, compared with panels with MgO protective layer.ve layer.layer.