• 제목/요약/키워드: process gas flow

검색결과 1,109건 처리시간 0.03초

분류층 석탄반응로에서 유동분포가 연소성능에 미치는 영향 (Effect of Flow Distribution on the Combustion Efficiency In an Entrained-Bed Coal Reactor)

  • 조한창;신현동
    • 대한기계학회논문집B
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    • 제23권8호
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    • pp.1022-1030
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    • 1999
  • A numerical study was carried out to analyze the effect of flow distribution of stirred part and plug flow part on combustion efficiency at the coal gasification process in an entrained bed coal reactor. The model of computation was based on gas phase eulerian balance equations of mass and momentum. The solid phase was described by lagrangian equations of motion. The $k-{\varepsilon}$ model was used to calculate the turbulence flow and eddy dissipation model was used to describe the gas phase reaction rate. The radiation was solved using a Monte-Carlo method. One-step parallel two reaction model was employed for the devolatilization process of a high volatile bituminous Kideco coal. The computations agreed well with the experiments, but the flame front was closer to the burner than the measured one. The flow distribution of a stirred part and a plug flow part in a reactor was a function of the magnitude of recirculation zone resulted from the swirl. The combustion efficiency was enhanced with decreasing stirred part and the maximum value was found around S=1.2, having the minimum stirred part. The combustion efficiency resulted from not only the flow distribution but also the particle residence time through the hot reaction zone of the stirred part, in particular for the weak swirl without IRZ(internal recirculation zone) and the long lifted flame.

Effect of ON/OFF Cycles of Ar Gas on Structural and Optical Properties of ZnO Nanostructure Grown by Vapor Phase Transport

  • Nam, Gi-Woong;Kim, Min-Su;Cho, Min-Young;Kim, So-A-Ram;Leem, Jae-Young
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.415-415
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    • 2012
  • ZnO nanostructures were synthesized by a vapor phase transport process in a single-zone furnace within a horizontal quartz tube with an inner diameter of 38 mm and a length of 485 mm. The ZnO nanostructures were grown on Au-catalyzed Si(100) substrates by using a mixture of zinc oxide and graphite powders. The growth of ZnO nanostructures was conducted at $800^{\circ}C$ for 30 min. High-purity Ar and $O_2$ gases were pushed through the quartz tube during the process at a flow rate of 100 and 10 sccm, respectively. The sequence of ON/OFF cycles of the Ar gas flow was repeated, while the $O_2$ flow is kept constant during the growth time. The Ar gas flow was ON for 1 min/cycle and that was OFF for 2 min/cycle. The structure and optical properties of the ZnO nanostructures were investigated by field-emission scanning electron microscope, X-ray diffraction, temperature-dependent photoluminescence. The preferred orientation of the ZnO nanostructures was along c-axis with hexagonal wurtzite structure.

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RH 공정 조건이 다른 TMCP강의 개재물 및 기계적 특성 (Inclusions and Mechanical Properties of TMCP Steel under Different RH Process Conditions)

  • 권영국;최병철;이금화;남기우
    • 한국산업융합학회 논문집
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    • 제26권1호
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    • pp.87-94
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    • 2023
  • TMCP(Thermo Mechanical Control Process) steel was continuously cast (CC) by varying the argon gas flow rate and vacuum time in the Ruhrstahl Heraeus (RH) refining process. Using the CC specimens, the distribution of the inclusions and the mechanical properties were evaluated. A lot of oxides and Al-O type inclusions were observed. The average Vickers hardness did not show a constant, but showed dispersion in a certain range. The shape and scale parameters of the CC specimen with an argon gas flow rate of 160Nm3 and a vacuum time of 12 minutes was the best. Mechanical properties (tensile strength, yield strength and elongation) were consistent with the Weibull probability distribution analysis results. The impact resistance was the best for CC specimens with an argon flow rate of 140 Nm3 and a vacuum time of 12 minutes. Although the inclusions and mechanical properties of the CC specimens were evaluated according to the argon gas flow rate and vacuum time, these values were no significant difference.

Applications of Plasma Modeling for Semiconductor Industry

  • Efremov, Alexandre
    • E2M - 전기 전자와 첨단 소재
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    • 제15권9호
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    • pp.10-14
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    • 2002
  • Plasma processing plays a significant role in semiconductor devices technology. Development of new plasma systems, such as high-density plasma reactors, required development of plasma theory to understand a whole process mechanism and to be able to explain and to predict processing results. A most important task in this way is to establish interconnections between input process parameters (working gas, pressure flow rate input power density) and a various plasma subsystems (electron gas, volume and heterogeneous gas chemistry, transport), which are closely connected one with other. It will allow select optimal ways for processes optimizations.

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가스사출성형을 이용한 TV MASK FRONT의 무도장 제품에 관한 연구 (A Study on Paintless Molded Parts in TV Mask Front Using Gas-Assisted Injection Molding)

  • 조재성
    • 소성∙가공
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    • 제11권8호
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    • pp.691-700
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    • 2002
  • Injection molded plastic parts have many surface detects: weld line, sink mark, flow mark, gloss, shading, scratching, and so on. Because these surface faults have not been accepted esthetically, plastic parts are Produced through painting or texturing. The purpose of this paper is to develop a paintless molded part of TV Mask Front by flow control method and gas-assisted injection molding. In order to minimize defects from injection molding, this study was carried out using computer aided injection mold filling simulations using MF/FLOW and MF/GAS. Based on these numerical results, we developed FR(Flame Retardant) HIPS and established guidelines of part design, mold design, and Processing conditions. We have achieved of cost sayings, improvement of productivity, and utilization of recycling by eliminating surface defects and painting process.

화학기상침투법 반응로 내부 유동에 따른 탄소/탄소 복합재 밀도화 (Effects of the Gas Flow Inside a CVI Reactor on the Densification of a C/C Composite)

  • 김혜규;지우석;권향주;윤성태;김정일
    • Composites Research
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    • 제34권4호
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    • pp.249-256
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    • 2021
  • 본 논문에서는 화학기상침투법(CVI) 공정으로 제작되는 탄소/탄소 복합재의 밀도화 과정을 수치해석적으로 연구하였다. 이를 위해 선행 연구에서 개발된 전산유체역학 모델과 반응로 내 주요 화학 반응 모델을 연계한 다중물리 수치해석 모델을 이용하여, 섬유 프리폼의 밀도와 공극률 변화를 다양한 측면에서 분석하였다. 특히 프리폼 주변 기체 유동의 형태에 따른 밀도화 변화를 알기 위해, 특정 형상의 구조물을 프리폼 주변에 배치시켜 유동을 변화시킨 후 프리폼의 밀도화를 계산하였다. 총 4가지 다른 형태의 구조물로 해석한 결과 프리폼 주변의 유동 형태 및 속도 분포를 구조물 형상으로 제어할 수 있었으며, 프리폼의 평균 밀도를 높이거나 밀도 편차를 감소시키는 것이 가능함을 확인하였다. 본 연구에서는 실제 산업 현장에서 사용되는 반응로와 공정 조건을 모델로 이용하였다.

암모니아 반응기의 분해 효율 최적화를 통한 암모니아 분해 및 수소 정제 공정 모델 연구 (Optimization of Ammonia Decomposition and Hydrogen Purification Process Focusing on Ammonia Decomposition Rate)

  • 조대명;박종화;유돈상
    • 한국수소및신에너지학회논문집
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    • 제34권6호
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    • pp.594-600
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    • 2023
  • In this study, a process model and optimization design direction for a hydrogen production plant through ammonia decomposition are presented. If the reactor decomposition rate is designed to approach 100%, the amount of catalyst increases and the devices that make up the entire system also have a large design capacity. However, if the characteristics of the hydrogen regeneration process are reflected in the design of the reactor, it becomes possible to satisfy the total flow rate of fuel gas with the discharged tail gas flow rate. Analyzing the plant process simulation results, it was confirmed that when an appropriate decomposition rate is maintained in the reactor, the phenomenon of excess or shortage of fuel gas disappears. In addition, it became possible to reduce the amount of catalyst required and design the optimized capacity of the relevant processes.

Non-absorbable Gas Effects on Heat and Mass Transfer in Falling Film Absorption

  • Kim, Byongjoo;Lee, Chunkyu
    • Journal of Mechanical Science and Technology
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    • 제17권4호
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    • pp.581-589
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    • 2003
  • Film absorption involves simultaneous heat and mass transfer in the gas-liquid system. While the non-absorbable gas does not participate directly In the absorption process. its pretence does affect the overall heat and mass transfer. An experimental study was performed to investigate the heat and mass transfer characteristics of LiBr-H$_2$O solution flow ing over 6-row horizontal tubes with the water vapor absorption in the pretence of non-absorbable gases. The volumetric concentration of non-absorbable gas, air, was varied from 0.17 to 10.0%. The combined effects of the solution flow rate and its concentration on the heat and mass transfer coefficients were also examined. The presence of 2% volumetric concentration of air resulted in a 25% reduction in the Nusselt number and 41% reduction in the Sherwood number Optimum film Reynolds number was found to exist at which the heat and mass transfer reach their maximum value independent of air contents. Reduced Nusselt and Sherwood numbers. defined as the ratio of Nusselt and Sherwood numbers at given non-absorbable gas content to that with pure water vapor, were correlated to account for the reduction in the heat and mass transfer due to non-absorbable gases in a falling film absorption process.

다구찌 기법을 이용한 용사코팅의 공정 최적화 (Optimization for Thermal spray Process by Taguchi Method)

  • 김균택;김영식
    • 동력기계공학회지
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    • 제16권2호
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    • pp.54-59
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    • 2012
  • In the present study, process optimization for thermal-sprayed Ni-based alloy coating has been performed using Taguchi method and analysis of variance(ANOVA). Ni-based alloy coatings were fabricated by flame spray process on steel substrate, and the hardness test and wear test were performed. Experiments were designed as per Taguchi's L9 orthogonal array and tests were conducted with different Oxygen gas flow, Acetylene gas flow, Powder feed rate and Spray distance. Multi response signal to noise ratio (MRSN) was calculated for the response variables and the optimum combination level of factors was obtained simultaneously using Taguchi's parametric design.

SiCl$_4$와 Cl$_2$가스에 의한 InP, InGaAs 및 InAIAs의 반응성 이온 식각: 가스유량, rf 전력, 공정압력, Ar 첨가의 영향 (Reactive Ion Etching of InP, InGaAs and InAIAs by SiCl$_4$ and Cl$_2$ Gases: Effects of Gas Flow Rate, rf Power, Process Pressure and Ar Addition)

  • 유재수;송진동;배성주;정지훈;이용탁
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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    • pp.25-28
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    • 2001
  • In this paper, we have investigated the effects of gas flow rate, rf power, process pressure and Ar addition on reactive ion etching of InP, InGaAs and InAlAs using Sic14 and Cl$_2$ gases. The etch rates were measured by using a surface profiler. The etched profiles, sidewall roughness, and surface morphology were observed by scanning electron microscopy and by atomic force microscopy. The selective etching of InGaAs to InP and InAlAs was studied by varying the etching parameters. It was found that Cl$_2$ gas is more efficient for the selective etching of InGaAs to InAlAs than SiCl$_4$ gas. The etch selectivity of InGaAs to InAlAs is strongly dependent on the rf power and the process pressure.

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