• 제목/요약/키워드: primary silicon

검색결과 106건 처리시간 0.023초

Results of the key comparison in absolute pressure from 1 Pa to 1000 Pa

  • Hong, Seung-Soo;Shin, Yong-Hyeon;Chung, Kwang-Hwa;A. P. Miiller
    • Journal of Korean Vacuum Science & Technology
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    • 제6권3호
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    • pp.109-115
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    • 2002
  • This paper describes a CCM key comparison of low absolute-pressure standards at seven National Measurement Institutes that was carried out during the period March 1998 to September 1999 in order to determine their degrees of equivalence at pressures in the range 1 Pa to 1000 Pa. The Korea Research Institutes of Standards and Science(KRISS) participated from 10 Pa to 1000 Pa pressure range in 1999. The primary standards, which represent two principal measurement methods, included five liquid-column manometers and four static expansion systems. The transfer standard package consisted of four high-precision pressure transducers, two capacitance diaphragm gauges to provide high resolution at low pressures, and two resonant silicon gauges to provide the required calibration stability.

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In-Vivo 및 In-Vitro 실험을 통한 기계식 판막의 혈전현상 검출을 위한 기초연구 (Basis or In-Vivo and In-Vitro Thrombosis Detection of Mechanical Valve)

  • 이혁수;이상훈;김삼현
    • 대한의용생체공학회:학술대회논문집
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    • 대한의용생체공학회 1997년도 추계학술대회
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    • pp.113-117
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    • 1997
  • In this paper we detected the thrombosis formation by spectral analysis and neural network. Using microphone and amplifier, we measured the sound from the mechanical valve which is attached to the pneumatic ventricular assist device. The sound was sampled by A/D converter and the periodogram is the main algorithm or obtaining spectrum. We made the valvular thrombosis models using pellethane and silicon and they are thrombosis model on the disk, around the sewing ring and fibrous tissue growth across the orifice of valve. The spectrum of normal and 5 kinds of thrombotic valve were obtained and primary and secondary peak appeared in each spectrum waveform. So to distinguish the secondary peak of normal and thrombotic valve quantatively, 3 layer back propagation neural network.

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고온/고압 환경 하에서 물로 윤활되는 그루브 저어널 베어링의 윤활 해석 (Lubrication Analysis of the Grooved Journal Bearing Lubricated with Pressurized High Temperature Water)

  • 이재선;박진석;김종인
    • Tribology and Lubricants
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    • 제18권2호
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    • pp.105-108
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    • 2002
  • Specially designed grooved journal bearings are installed in the main coolant pump for SMART (System-integrated Modular Advanced ReacTor) to support radial load on the rotating shaft. The canned motor type main coolant pumps are arranged vertically on the reactor vessel and filled with circulating primary coolant which is pure water. The main coolant pump bearings are lubricated with this coolant without any other external lubricant supply. Because lubricating condition is too severe for this bearing to generate proper hydrodynamic film, investigation of lubrication characteristics of the journal bearing is important to satisfy life constraint of whole pump system, and the results will be applied to the analysis of dynamic characteristics of the shaft system. The bearing is made of silicon graphite which has self$.$lubricating effect. A lubrication analysis method is proposed for this vertically grooved journal bearing in the main coolant pump of SMART, and lubricational characteristics of the bearings are examined in this paper.

Si PIN Radiation Sensor with CMOS Readout Circuit

  • Kwon, Yu-Mi;Kang, Hee-Sung;Lee, Jung-Hee;Lee, Yong Soo
    • 센서학회지
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    • 제23권2호
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    • pp.73-81
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    • 2014
  • Silicon PIN diode radiation sensors and CMOS readout circuits were designed and fabricated in this study. The PIN diodes were fabricated using a 380-${\mu}m$-thick 4-inch n+ Si (111) wafer containing a $2-k{\Omega}{\cdot}cm$ n- thin epitaxial layer. CMOS readout circuits employed the driving and signal processes in a radiation sensor were mixed with digital logic and analog input circuits. The primary functions of readout circuits are amplification of sensor signals and the generation of the alarm signals when radiation events occur. The radiation sensors and CMOS readout circuits were fabricated in the Institute of Semiconductor Fusion Technology (ISFT) semiconductor fabrication facilities located in Kyungpook National University. The performance of the readout circuit combined with the Si PIN diode sensor was demonstrated.

The Mechanical and Cryogenic Design of IGRINS

  • 박찬;이성호
    • 천문학회보
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    • 제36권2호
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    • pp.154.1-154.1
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    • 2011
  • IGRINS (Immersion Grating Infrared Spectrometer) is a cross-dispersed high resolution near-infrared spectrograph whose primary disperser is a silicon immersion grating (SIG) and cross-dispersers are two volume phase holographic gratings (VPHG). IGRINS covers the full ranges of H and K astronomical wavelength bands at a single exposure with the spectral resolution of 40,000. The overall layout of the IGRINS Cryostat is a $960{\times}600{\times}380$ cubic millimeter rectangular box and the whole optical train is sitting on an $880{\times}520{\times}50\;mm^3$ rectangular Optical Bench. The total volume of the instrument has been revolutionarily reduced and remained compact for the spectral coverage and sensitivity of a high resolution spectrograph in infrared. We, in this presentation, introduce the design models, the structural and thermal analysis results of the mechanics and cryogenics of IGRINS.

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Effect of Alternating Magnetic Field on Ion Activation in Low Temperature Polycrystalline Silicon Technology

  • Hwang, Jin Ha;Lim, Tae Hyung
    • 반도체디스플레이기술학회지
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    • 제3권1호
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    • pp.35-39
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    • 2004
  • Statistical design of experiments was successfully employed to investigate the effect of alternating magnetic field on activation of polycrystalline Si (p-Si) doped as n-type using $\textrm{PH}_3$, by full factorial design of three factors with two levels. In this design, the input variables are graphite size, alternating current, and activation time. The output parameter, sheet resistance, is analyzed in terms of the primary effects and multi-factor interactions. Notably, the three-factor interaction is calculated to be a dominant interaction. The interaction between graphite size and activation time and the main effect of current are important effects compared to the other variables and relevant interactions. Alternating magnetic flux activation is proved a significantly beneficial processing technique.

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상태밀도와 overlap integral이 실리콘내 전자의 임팩트이온화율에 미치는 영향 (Influence of the density of states and overlap integral on impact ionization rate for silicon)

  • 정학기;유창관;이종인
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 1999년도 춘계종합학술대회
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    • pp.394-397
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    • 1999
  • 임팩트이온화는 고전계하에서 고에너지를 지닌 캐리어간 산란으로써 전자전송해석에 필수적인 요소이다. 그러나 포물선 또는 비포물선 E-k관계는 고에너지에서 실제 밴드구조와 매우 상이한 결과를 나타내므로 임팩트이온화에 대한 정화한 모델은 풀밴드 E-k관계와 페르미의 황금법칙을 이용하여 제시하고 있다. 본 연구에서는 풀밴드를 이용하여 실리콘 임팩트이온화율에 영향을 미치는 상태밀도와 에너지밴드구조 관계, overlap integral의 에너지에 대한 변화를 조사 분석하였다. 실리콘의 에너지밴드구조를 구하기 위하여 경험적 의사포텐셜방법을 사용하였으며 상태밀도를 구하기 위하여 사면체방법을 사용하였다. 또한 임팩트이온화율을 구하기 위하여 페르미의 황금법칙들 사용하였다. 결과적으로 상태밀도는 에너지증가에 따라 단조 증가하는 임팩트이온화율과 달리 에너지밴드구조에 따라 변화하였다. 그러나 overlap integral은 에너지증가에 따라 큰 값을 갖는 분포가 증가함으로써 임팩트이온화율에 직접 영향을 미치는 것을 알 수 있었다.

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지하철 전력계통의 고조파 영향 분석 및 그 대책에 관한 연구 (Analysis of Harmonic Effects on Substation Power System and its Countermeasure)

  • 송진호;황유모
    • 대한전기학회논문지:전기기기및에너지변환시스템부문B
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    • 제51권4호
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    • pp.210-220
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    • 2002
  • We analysised the effect of harmonics on electric machines of substation power system barred on quantitatively measured harmonics and proposed the methods for prevention of harmonics through checking on transformer, rectifier and cable's capacities against harmonics with reference to KEPCO's electricity service standard. In order to analysis harmoninics of silicon rectifier that is power source in DC substation, computer simulations for a substation with TR of high voltage distribution switchboard are performed. Simulation results show that the total harmonic distortion factor becomes smaller for TR primary and receiving points in order rather than silicon rectifier which is harmonic generation source so that the harmonics generated frets each rectifier are outflowed to power supply and high voltage distribution switchboard The result of higher distortion factors of voltage and current for rectifier with 100% load than those with 50 % and 30% indicates that the waveform of voltage and current for the real substation power system at the office-going and the closing hours with heavy loads might be more distorted. As proposed methods for harmonic reduction, the conventional 6 pulse-type for substation is required to be replaced by 12 pulse-type for reduction of 5th and 7th harmonics. The active filter rather than the passive filter is more effective due to severe variance of rectifier loads, but the high cost is price to be paid. In view of installation area and costs, the use of 12 pulse-type transformer is desirable and then the parallel transformer and the rectifier within the substation must be replaced at the same time. Other substations with parallel feeder can use 6 pulse-type transformer.

실리콘 정포제의 종류에 따른 폴리우레탄 폼 지수제의 내수성 특성에 관한 연구 (Studies on the Water Resistance Properties of the Polyurethane Foam Silicone Foal Control Agent according to the Type of Silicone Foam Stabilizer)

  • 김근허;김현민;김성래;김영근
    • 한국구조물진단유지관리공학회 논문집
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    • 제20권2호
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    • pp.60-66
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    • 2016
  • 본 연구는 실리콘계 정포제의 특성에 따른 폴리우레탄 폼 지수제의 cell 구조와 흡수량 변화를 알아보기 위하여 6종의 정포제를 사용하여 폴리우레탄 폼 지수제를 제조하여 FE-SEM으로 분석한 결과 실리콘 정포제의 실록산 주사슬 말단에 PO n개가 결합되어 있는 DC-193, DC-2585, DC-5125, DC-198의 cell 구조는 close cell로 확인이 되었고, 실리콘 정포제의 실록산 주사슬 말단에 EO n개가 결합 되어 있는 DC-5043과 DC-5598은 open cell 구조로 나타났다. 또한 cell 구조 변화에 따른 흡수량 에서는 close cell의 크기가 가장 세밀하고 균일한 DC-193의 흡수량이 가장 적게 나타나 내수성이 가장 우수한 것으로 나타났으며 open cell의 크기가 가장 크게 형성된 DC-5043의 흡수량이 가장 많은 것으로 나타났다. 이들의 방수성능을 콘크리트 구조물을 모사하여 시험한 결과 누수가 없음을 확인하였다.

High-k ZrO2 Enhanced Localized Surface Plasmon Resonance for Application to Thin Film Silicon Solar Cells

  • Li, Hua-Min;Zang, Gang;Yang, Cheng;Lim, Yeong-Dae;Shen, Tian-Zi;Yoo, Won-Jong;Park, Young-Jun;Lim, Jong-Min
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.276-276
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    • 2010
  • Localized surface plasmon resonance (LSPR) has been explored recently as a promising approach to increase energy conversion efficiency in photovoltaic devices, particularly for thin film hydrogenated amorphous silicon (a-Si:H) solar cells. The LSPR is frequently excited via an electromagnetic (EM) radiation in proximate metallic nanostructures and its primary con sequences are selective photon extinction and local EM enhancement which gives rise to improved photogeneration of electron-hole (e-h) pairs, and consequently increases photocurrent. In this work, high-dielectric-constant (k) $ZrO_2$ (refractive index n=2.22, dielectric constant $\varepsilon=4.93$ at the wavelength of 550 nm) is proposed as spacing layer to enhance the LSPR for application to the thin film silicon solar cells. Compared to excitation of the LSPR using $SiO_2$ (n=1.46, $\varepsilon=2.13$ at the wavelength of 546.1 nm) spacing layer with Au nanoparticles of the radius of 45nm, that using $ZrO_2$ dielectric shows the advantages of(i) ~2.5 times greater polarizability, (ii) ~3.5 times larger scattering cross-section and ~1.5 times larger absorption cross-section, (iii) 4.5% higher transmission coefficient of the same thickness and (iv) 7.8% greater transmitted electric filed intensity at the same depth. All those results are calculated by Mie theory and Fresnel equations, and simulated by finite-difference time-domain (FDTD) calculations with proper boundary conditions. Red-shifting of the LSPR wavelength using high-k $ZrO_2$ dielectric is also observed according to location of the peak and this is consistent with the other's report. Finally, our experimental results show that variation of short-circuit current density ($J_{sc}$) of the LSPR enhanced a-Si:H solar cell by using the $ZrO_2$ spacing layer is 45.4% higher than that using the $SiO_2$ spacing layer, supporting our calculation and theory.

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