• 한국주조공학회지
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• 제15권6호
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• pp.566-573
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• 1995

In this study, the microstructural characteristics such as primary silicon, eutectic silicon, $SiC_p$ dispersion behavior, compound amount and Si solubility in $Al/SiC_p$ composite fabricated by the squeeze casting under various conditions were investigated systematically. As applied pressure(MPa) increases, cooling rate and compound amount are increased. In gravity casting, the cooling rate of hypereutectic composite is slower than of hypoeutectic composite by exothermic reaction of primary Si crystallization. But the cooling rate of hypereutectic composite is faster than that of hypoeutectic composite fabricated by same applied pressure, because amount of primary Si crystallization in hypereutectic composite was decreased, on the contrary, primary ${\alpha}-Al$ in hypoeutetic composite was increased due to increase of Si solubility in matrix by applied pressure. The crystalized primary silicon in hypereutectic composite fabricated by squeeze casting become more fine than that in non-pressure casting This is because mush zone became narrow due to increase of Si content of eutectic composition by pressure and time for growth of primary silicon got shorter according to applied pressure. It is turned out that eutectic temperature and liquidus are decreased by the increasing of squeeze pressure in all the composite due to thermal unstability of matrix owing to increasing of Si solubility in matrix by the increasing of applied pressure, as indicated in thermal anaiysis(DSC) results.

• 열처리공학회지
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• 제18권3호
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• pp.157-163
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• 2005

Effects of refinement of primary Si and residual stress on the mechanical properties of Aluminum B.390 alloy have been examined. Calcium was found to have an effect on the size of primary silicon particles. Primary silicon particle was refined as Ca content decreased. Refinement of primary Si particles led to an improvement in mechanical properties of the alloy; increase of elongation was prominent, above all. By the increase of compressive residual stress in the matrix alloy, tensile strength increased but elongation decreased.

• 한국산업융합학회 논문집
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• 제17권3호
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• pp.122-135
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• 2014

This paper was studied on the horizontal continuous casting of Al-xSi(x=10~15%) aluminum alloy. The experiments of the horizontal continuous casting was carried out by the horizontal continuous casting machine for various casting conditions and investigated on fracture types and mechanisms. Surface defect types for the horizontal continuous casting is also investigated. And the study was carried out that the horizontal continuous casting conditions such as casting temperature, cooling rate, and drawing speed affect the hardness and primary silicon size of Al-xSi(x=10~15%) aluminum rod bar. Casting temperature within this experiment conditions don't affect on the hardness of rod bar but the higher casting temperature is the smaller primary silicon size. The higher cooling rate and drawing speed have the higher hardness and the smaller primary silicon size.

• 대한금속재료학회지
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• 제49권11호
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• pp.874-881
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• 2011

The present study describes a new technique to extract the primary silicon from an Al-Si alloy melt using centrifugal force during its solidification. The primary silicon was separated from an Al-50 wt.%Si alloy by centrifugal force in the form of a foam, which facilitated subsequent acid leaching to extract the pure silicon due to its wide surface area. The foam recovery after centrifugal separation was decreased as centrifugal acceleration was increased. The final recovery after acid leaching became closer to the solid fraction of the alloy, which was calculated from the Al-Si binary phase diagram, with increasing centrifugal acceleration due to the effective removal of the attached Al on the foam. The purity of the primary silicon obtained by the centrifugal separation method was over 99.99%, with only aluminum being also present.

• 한국진공학회지
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• 제1권1호
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• pp.153-161
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• 1992

A plasma has been used in a high vaccum, cold wall reactor for low temperature deposition of C54 TiSi2 and for in-situ surface cleaning prior to silicide deposition. SiH4 and TiCl4 were used as the silicon and titanium sources, respectively. The deposited films had low resistivities in the range of 15~25 uohm-cm. The investigation of the experimental variables' effects on the growth of silicide and its concomitant silicon consumption revealed that and were the dominant species for silicide formation and the primary factors in silicon consumption were gas composition ratio and temperature. Increasing silane flow rate from 6 to 9 sccm decreased silicon consumption from 1500 A/min to less than 30 A/min. Furthermore, decreasing the temperature from 650 to $590^{\circ}C$ achieved blanket silicide deposition with no silicon consumption. A kinetic model of silicon consumption is proposed to understand the fundamental mechanism responsible for the dependence of silicon consumption on SiH4 flow rate.

• 소성∙가공
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• 제14권4호
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• pp.319-326
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• 2005

In this study, the nano-deformation behavior of semi-solid Al-Si alloy was investigated using a molecular dynamics simulation as a part of the research on the surface crack behavior in thixoformed automobile parts. The microstructure of the grain-size controlled Al-Si alloy consists of primary and eutectic regions. In eutectic regions the crack initiation begins with initial fracture of the eutectic silicon particles and inside other intermetallic phases. Nano-deformation characteristics in the eutectic and primary phase of the grain-size controlled Al-Si alloy were investigated through the molecular dynamics simulation. The primary phase was assumed to be single crystal aluminum. It was shown that the vacancy occurred at the zone where silicon molecules were.

• 한국진공학회지
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• 제11권4호
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• pp.249-255
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• 2002

이방성 습식 식각기술을 이용하여 멤버레인을 제작하기 위하여 KOH 용액 및 KOH-IPA 혼합용액을 사용하여 단결정 실리콘 기판을 식각하였다. 단결정 실리콘의 식각속도는 식각 용액의 온도와 농도에 좌우되었으며, 식각 용액의 농도에 따라 식각 형태와 패턴 형성 방향이 달라짐도 관찰되었다. 식각을 위한 표면패턴은 실리콘웨이퍼의 primary flat에 $45^{\circ}$로 기울여 형성되었으며 KOH의 농도가 20 wt%로 유지되었을 때, 식각 용액의 온도 $80^{\circ}C$ 이상에서는 U-groove, $80^{\circ}C$ 이하의 온도에서는 V-groove 식각 형태가 형성되었다. 각 면에 대한 식각속도 차이에 의해서 생기는 hillock은 온도와 농도가 높아짐에 따라 현저하게 줄어들었다.

• 전기화학회지
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• 제13권1호
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• pp.70-74
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• 2010

전기화학 반응을 이용한 실리콘 표면상으로의 단백질 고정을 연구하였다. 이를 위해 Nitrobenzendiazonium(NiBD) 양이온을 화학적 환원반응을 통해 수식하고 수식된 실리콘 표면을 전기화학적으로 다시 환원시켜 나이트로 기능기를 일차아민 기능기로 활성화하여 단백질 고정에 이용하였다. 활성화 된 표면에 금 나노입자를 고정하여 일차 아민 생성을 확인하였다. 또한 이 방법을 응용하여 실리콘 나노선 어레이 중 선택된 나노선 만을 활성화하고 단백질을 선택적으로 고정하는 연구를 수행하였다. 이 연구를 통하여 NiBD 양이온의 화학 및 전기화학 반응이 실리콘 나노선 표면으로 단백질의 선택적 고정화에 유용하게 사용될 수 있음을 보였다.

• Bulletin of the Korean Chemical Society
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• 제20권10호
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• pp.1136-1144
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• 1999

The collision-induced reaction of gas-phase atomic hydrogen with hydrogen atoms chemisorbed on a silicon (001)-(2×1) surface is studied by use of the classical trajectory approach. The model is based on reaction zone atoms interacting with a finite number of primary system silicon atoms, which then are coupled to the heat bath, i.e., the bulk solid phase. The potential energy of the Hads‥Hgas interaction is the primary driver of the reaction, and in all reactive collisions, there is an efficient flow of energy from this interaction to the Hads-Si bond. All reactive events occur on a subpicosecond scale, following the Eley-Rideal mechanism. These events occur in a localized region around the adatom site on the surface. The reaction probability shows the maximum near 700K as the gas temperature increases, but it is nearly independent of the surface temperature up to 700 K. Over the surface temperature range of 0-700 K and gas temperature range of 300 to 2500 K, the reaction probability lies at about 0.1. The reaction energy available for the product states is small, and most of this energy is carried away by the desorbing H2 in its translational and vibrational motions. The Langevin equation is used to consider energy exchange between the reaction zone and the bulk solid phase.

• 한국공작기계학회논문집
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• 제16권2호
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• pp.70-77
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• 2007

The application of focused ion beam(FIB) technology has been broadened in the fabrication of nanoscale regime. The extended application of FIB is dependent on complicated reciprocal relation of operating parameters. It is necessary for successful and efficient modifications on the surface of silicon substrate. The primary effect by Gaussian beam intensity is significantly shown from various aperture size, accelerating voltage, and beam current. Also, the secondary effect of other process factors - dwell time, pixel interval, scan mode, and pattern size has affected to etching results. For the process analysis, influence of the secondary factors on FIB micromilling process is examined with respect to sputtering depth during the milling process in silicon material. The results are analyzed by the ratio of signal to noise obtained using design of experiment in each parameter.