• 상하수도학회지
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• 제29권1호
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• pp.133-138
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• 2015

Pressure retarded osmosis (PRO) process is one of membrane processes for harvesting renewable energy by using salinity difference between feed and draw solutions. Power is generated by permeation flux multiplied by hydraulic pressure in draw side. Membrane fouling phenomena in PRO process is presumed to be less sever, but it is inevitable. Membrane fouling in PRO process decreases water permeation through membrane, resulting in significant power production decline. This study intended to investigate the effect of hydraulic pressure in PRO process on alginate induced organic fouling as high and low hydraulic pressures (6.5 bar and 12 bar) were applied for 24 h under the same initial water flux. In addition, organic fouling in draw side from the presence of foulant (sodium alginate) in draw solution was examined. As major results, hydraulic pressure was found to be not a significant factor affecting in PRO organic fouling as long as the same initial water flux is maintained, inidicating that operating PRO process with high hydraulic pressure for efficient energy harvesting will not cause severe organic fouling. In addition, flux decline was negligible from the presence of organic foulant in draw side.

• 대한간호학회지
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• 제23권2호
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• pp.245-254
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• 1993

The purpose of this study was to identify effective methods to minimize increases in intracranial pressure(IICP ) during endotracheal suction by means of comparing two methods of hyperventilation and oxygen supply before and after endotracheal suction. In order to evaluate the effects of these two methods, the ICP during suctioning and the sustained time of IICP were measured. For hyperventilation, ambu-bagging was done 10 times for 30 seconds with a tidal volume of 800-900m1. For oxygen supply, 100 percent oxygen was supplied for 2 minutes before and after suction. The subjects for this study were 12 neurosurgical patients who had had a subarachnoid bolt inserted for ICP monitoring and they were all on mechanical ventilatory support in a surgical intensive care unit of Seoul National University Hospital from July 1, 1991 to March 31, 1992. In each patient hyperventilation was performed five times and oxygen supply was given five times and intracranial pressures were measured immediately before and every 30 seconds for 15 minutes after suction. For case assignments counterbalancing and repeated measure designs were combined. And so the total number of experiments were sixty for each group. The effects of hyperventilation and oxygen supply on the IICP and the sustained time of IICP after suction were analyzed by t-test. The results of study were as follows 1. There was a significant difference between the two groups in the increased ICP during suction (t=2.49, p=.014). 2. The sustained time of IICP after suctioning in the oxygen supply group was shorter than that in the hyperventilation group(t=2.35, p=.020) In summary, the Increase in the ICP during suction was lower and the time for the ICP to return to the presuction level was shorter in the oxygen supply group as compared to the hyperventilation group. Therefore, oxygen supply can be re commended before and after endotracheal suction.

• Journal of Chest Surgery
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• 제29권1호
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• pp.1-6
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• 1996

5마리의 잡견(18~22kg)을 이용하여, 경막외강에 생리식염수를 연속 점적하여 뇌사를 유발시킨다. 뇌사발생시 점의 뇌압은 122.0$\pm$6.25mmHg이며 뇌사후 30분 최고치에 도달하였다. 뇌사를 유발시키는데 필요한 생리식염수의 양은 4.8$\pm$1.0ml이었고, 143.0$\pm$30.9분이 필요하였다. 뇌사가 올때까지 동맥압은 변하지 않지만 그후 점차 떨어지고, 맥박수는 뇌사 30분 후 안정시 보다 50% 정도 증가한 최고치에 달한다. 체온, 심박출량, 폐동맥압, 좌심실 이완말기압등의 혈역학적 지표는 뇌사진행 중에는큰 변화가 없었고, 심실 기외수축이 일시적으로 나타난 이외에는 부정맥도 관찰되지 않았다. 급작스러운 뇌압 상승 모델에서 보였던 혈역학적 변화는 관찰되지 않았다.

• 대한의용생체공학회:학술대회논문집
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• 대한의용생체공학회 1992년도 춘계학술대회
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• pp.171-174
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• 1992

Development of a noninvasive intensive care system calls for the use of evoked potentials (EPs), as a means of diagnosing traumatic head-injured patients. The experiment entails surgically plating two subarachnoid bolts and a subdural balloon through the skull to simulate a subdural hematoma. Using various levels of intracranial pressure (ICP) and/or different sizes of balloons, auditory evoked potentials (AEPs) were recorded from a rabbit. Six positive peat latencies ($P_1-P_6$) and five negative peak latencies ($N_1-N_5$) were extracted from an averaged AEP waveform. Multiple regression analyses were performed for determining a relationship between the ICP and AEP peak latencies. The results indicate that a major correlation of changes on AEP peak latencies is due to mechanical forcer of a mass (inflated balloon simulating a hematoma) in the distortion of the brain matter rather than increased ICP.

• 한국표면공학회지
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• 제45권4호
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• pp.168-173
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• 2012

A real-time monitoring of an immersed antenna type inductively coupled plasma (ICP) was done with optical emission spectroscopy (OES) to check the reports that sputtered atom density is decreasing as the ICP power is increased. At 10 mTorr pressure of Ar, Mg was sputtered by a bipolar pulsed power supply into 2 MHz ICP which has an insulator covered 2.5 turn antenna. Emitted light was collected in two different positions: above the target and inside the ICP region. With 100 W of Mg sputtering power, the intensities of Mg I (285.06 nm), Mg II (279.48 nm), Ar I (420.1 nm) were increased constantly with ICP power from 100 W to 600 W. At 500 W, the intensity of $Mg^+$ exceeded that of Mg under PID controlled discharge voltage of 180 V. The ratio of Mg II/Mg I was increased from 0.45 to 2.71 approximately 6 times.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 유기절연재료 방전 플라즈마연구회
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• pp.77-80
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• 2003

MEMS(Micro Electro Mechanical System) 기술에서 실리콘 식각기술의 중요성으로 플라즈마 식각기술의 개발이 꾸준히 진행되고 있다. 이중에서 ICP(Inductive Coupled Plasma)는 기존의 증착장치에 유도결합식 플라즈마를 추가로 발생시켜 증착막의 특성을 획기적으로 개선시키는 가장 최근에 개발된 기술이며, 이용에너지를 증가시키지 않고도 이용밀도를 높이고 이용업자들에 방향성을 가할 수 있는 새로운 플라즈마 기술로, 주로 MEMS 제조공정에 응용되고 있다. 본 연구에서는 STS-ICP $ASE^{HR}$을 이용하여 식각과 증착공정을 반복하여 식각을 하는 Bosch 식각에 관하여 연구하였다 STS-ICP $ASE^{HR}$ 장비의 Platen power, Coil power 및 Process pressure에 다양한 변화를 주어 각 변수에 따른 식각속도를 관찰하였다. 각 공정별 변수를 변화시킨 결과 Platen power 12W, Coil power 500W, 식각/Passivation Cycle 6/7sec 일 경우 식각속도는 $1.2{\mu}m$/min 이었고, Sidewall profile은 $90{\pm}0.7^{\circ}$로 나타나 매우 우수한 결과를 보였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.75-79
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• 2003

We studied InP etch results in high density planar inductively coupled $BCl_3$ and $BCl_3$/Ar plasmas. The investigated process parameters were ICP source power, RIE chuck power, chamber pressure and $BCl_3$/Ar gas composition. It was found that increase of ICP source power and RIE chuck power raised etch rate of InP, while that of chamber pressure decreased etch rate. Etched InP surface was clean and smooth (RMS roughness < 2 nm) with a moderate etch rate ($300\;{\sim}\;500\;{\AA}/min$) after the planar $BCl_3/Ar$ ICP etching. It may make it possible to open a new regime of InP etching with $CH_4/H_2$ - free plasma chemistry. Some amount of Ar addition (< 50%) also improved etch rates of InP, while too much Ar addition reduced etch rates of InP.

• 한국진공학회지
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• 제8권4B호
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• pp.541-547
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• 1999

Reactive ion etching process for InP using BCl3/O2/Ar high density inductively coupled plasma was investigated. The experimental design method proposed by the Taguchi was utilized to cover the whole parameter range while maintaining reasonable number of actual experiments. Results showed that the ICP power and the chamber pressure were the two dominant parameters affectsing etch results. It was also observed that the etch rate decreased and the surface roughness improved as the ICP power and the bias voltage increased and as the chamber pressure decreased. The Addition of oxygen to the gas mixture drastically improved surface roughness by suppressing the formation of the surface reaction product. The optimum condition was ICP power 600W, bias voltage -100V, 10% $O_2$, 6mTorr, and $180^{\circ}C$, resulting in about 0.15$\mu\textrm{m}$ etch rate with smooth surfaces and vertical mesa sidewalls Also, the maximum etch rate of abut 4.5 $\mu\textrm{m}$/min was obtained at the condition of ICP power 800W, bias voltage -150V, 15% $O_2$, 8mTorr and $160^{\circ}C$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.271-271
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• 2012

Many studies have been investigated on high density plasma source (Electron Cyclotron Resonance, Inductively Coupled Plasma, Helicon plasma) for large area source after It is announced that productivity of plasma process depends on plasma density. In this presentation, we will propose the new concept of the multiple source, which consists of a parallel connection of ICP sources and helicon plasma sources. For plasma uniformity, equivalent power (especially, equivalent current in ICP & Helicon) should distribute on each source. We design power feeding line as coaxial transmission line with same length of ground line in each source for equivalent power distribution. And we confirm the equivalent power distribution with simulation and experimental result. Based on basic study, we develop the plasma source for oxidation in semiconductor process. we will discuss the relationship between the processing parameters (With or WithOut magnet, operating pressure, input power ). In ICP, plasma density uniformity is uniform. In ICP with magnet (or Helicon) plasma density is not uniform. As a result, new design (magnet arrangement and gas distributor and etc..) are needed for uniform plasma density in ICP with magnet and Helicon.

• 반도체디스플레이기술학회지
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• 제20권3호
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• pp.32-38
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• 2021

We developed an inductively coupled plasma (ICP) etcher for GaN etching using a parallel plasma electrode source with a multifunctional chuck matched to it in order for the low power consumption and low process cost in comparison with the conventional ICP system with a helical-type plasma electrode source. The optimization process condition using it for the micro light-emitting diode (µ-LED) chip fabrication was established, which is an ICP RF power of 300 W, a chuck power of 200 W, a BCl₃/Cl₂ gas ratio of 3:2. Under this condition, the mesa structure with the etch depth over 1 ㎛ and the etch angle over 75° and also with no etching residue was obtained for the µ-LED chip. The developed ICP showed the improved values on the process pressure, the etch selectivity, the etch depth uniformity, the etch angle profile and the substrate temperature uniformity in comparison with the commercial ICP. The µ-LED chip fabricated using the developed ICP showed the similar or improved characteristics in the L-I-V measurements compared with the one fabricated using the conventional ICP method