• 제목/요약/키워드: precursor method.

검색결과 916건 처리시간 0.031초

유기 금속염법에 의한 고효율 전력전송용 BiSrCaCuO 초전도 전구체 합성 (Synthesis of High functional BiSrCaCuO Superconducting Precursor using Organic Metal Salts for Electrical Power Transmission)

  • 이상헌
    • 한국전기전자재료학회논문지
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    • 제18권10호
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    • pp.956-959
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    • 2005
  • High Tc superconducting with a BiSrCaCuO was prepared by the titrate method. The solid precursor produced by the dehydration of the gel at $120^{\circ}C$ for 12 h is not in the amorphous state as expected but in a crystalline state. X-tay diffraction peaks of nearly the same angular position as the peaks of high Tc phase were observed in the precursor.

Doctor blade를 이용한 용액형 CIGS 균일 코팅에 관한 연구 (A Study of CIGS Coated Thin-Film Layer using Doctor Blade Process)

  • 유종수;윤성만;김도진;조정대
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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    • pp.93.2-93.2
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    • 2010
  • Recently, printing and coating technologies application fields have been expanded to the energy field such as solar cell. One of the main reasons, why many researchers have been interested in printing technology as a manufacturing method, is the reduction of manufacturing cost. In this paper, We fabricated CIGS solar cell thin film layer by doctor blade methods using synthesis of CIS precursor nanoparticles ink on molybdenum (Mo) coated soda-lime glass substrate. Synthesis CIS precursor nanoparticles ink fabrication was mixed Cu, In, Se powder and Ethylenediamine, using microwave and centrifuging. Using multi coating process as we could easily fabrication a fine flatness CIS thin-film layer ($0.7{\sim}1.35{\mu}m$), and reduce a manufacture cost and process steps. Also if we use printing and coating method and solution process in each layer of CIGS solar cell (electrode, buffer), it is possible to fabricate all printed thin-film solar cell.

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P/M법과 유도가열법을 이용한 A1 Foam 재료의 기공제어 (Control of Cell Morphology of Al Foams fabricated by P/M Method and Induction Heating)

  • 윤성원;이승후;강충길
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2001년도 추계학술대회 논문집
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    • pp.289-292
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    • 2001
  • Aluminium foams, having a closed cell structure, fabricated by applying the powder compact method and an induction heating were studied. The powdered A6061 mixed with the powdered titanium hydride as a foaming agent was hot pressed into a foamable precursor. The resulting precursor was foamed by induction heating up to desired temperature. The effects of the titanium hydride content ($0.3{\~}1.5 wt.\%$), pressing pressure of the foamable precursor material (50-150kN), the forming temperature ($610{\~}690^{\circ}C$) and heating rate during foaming on the expansion behavior of the foam were investigated.

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Preparation and Characterization of Europium-doped Gadolinium Oxide Phosphors Using Oxalate Coprecipitation Method

  • Park, In-Yong;Lee, Jong-Won
    • 한국세라믹학회지
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    • 제47권2호
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    • pp.177-182
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    • 2010
  • To synthesize $Gd_2O_3:Eu^{3+}$ phosphor, gadolinium-europium oxalate precursors were prepared from oxalic acid, NaOH or aqueous ammonia via coprecipitation method. The obtained precursors were heat-treated and then characterized by XRD, SEM and PL. The kinds and amounts of coprecipitant (NaOH or aqueous ammonia) were found to affect the powder morphology and properties of gadolinium-europium oxalate precursors. Two crystalline precursors and one amorphous precursor were synthesized. The nanometer-sized amorphous gadolinium-europium oxalate precursor was first prepared using the oxalate coprecipitation technique. The calcined powders obtained from the amorphous precursor were nearly spherical in shape, and a narrow size distribution was obtained. The NaOH coprecipitant was more effective in the preparation of nanometer-sized spherical powders. A thermal decomposition process was conducted for the three kinds of precursors. The photoluminescence property was also measured as a function of europium content, and concentration quenching occurred for samples with europium concentrations of over 10 mol%.

MOD 공정으로 제조된 고임계전류 YBCO 후막 (High-Ic YBCO thick film fabricated by the MOD process)

  • 신거명;송규정;문승현;유상임
    • 한국초전도ㆍ저온공학회논문지
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    • 제10권1호
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    • pp.6-9
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    • 2008
  • We have investigated the MOD process successfully for the fabrication of the YBCO thick film on the $LaAlO_3$(001) single crystalline substrate. The cracking problem in YBCO thick film, a serious problem in the conventional TFA-MOD method, could be overcome with a careful control of precursor materials. Thus coating solution was prepared for the YBCO thick film by using fluorine-free precursor material. The precursor solutions were coated on the LAO(001) single crystalline substrate using the dip coating method, calcined at the temperature up to $500^{\circ}C$, and fired at various high temperatures for 2 h in a reduced oxygen atmosphere. Optimally processed YBCO thick film exhibited high critical current($I_c$) over 200 A/cm-width at 77K in self-field.

Patterned Fluorescence Images with a t-Boc-Protected Coumarin Derivative

  • Min Sung-Jun;Park Bum Jun;Kim Jong-Man
    • Macromolecular Research
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    • 제12권6호
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    • pp.615-617
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    • 2004
  • We have developed an efficient method for the generation of patterned fluorescence images using a protected precursor molecule. The t-Boc-protecting group of a coumarin derivative was readily removed from a polymer film upon irradiation with UV light in the presence of a photoacid generator to provide the original properties of the coumarin. Fine fluorescence patterns were obtained when using this photolithographic method.

전력기기 선재 합성 기술 (Fabrication Technology of High Tc Superconductor by Organic Salts Method)

  • 이상헌
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.42-43
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    • 2006
  • High Tc superconducting with a BiSrCaCuO was prepared by the citrate method. The solid precursor produced by the dehydration of the gel at $120^{\circ}C$ for 12h is not in the a morphous state as expected but in a crystalline state. X -ray diffraction peaks of nearly the same angular position as the peaks of high Tc phase were observed in the precursor.

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Magnetic Properties of $Nd_{12}Dy_2Fe_{73.2}Co_{6.6}Ga_{0.6}B_{5.6}$ magnets fabricated by current-applied pressure-assisted method

  • Kim, H. T.;S. H. Cho;Kim, Y. B.;G. A. Kapustin;Kim, H. S.
    • 한국자기학회:학술대회 개요집
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    • 한국자기학회 2002년도 동계연구발표회 논문개요집
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    • pp.232-233
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    • 2002
  • Nanostructed high energy Nd-Fe-B based bulk magnet can be prepared by hot-working process (hot press and die-upset) from melt-spun amorphous or nanocrystalline powder.[1] Recently, we have investigated a modified method, current-applied pressure-assisted (CAPA) process, to produce nanocrystalline isotropic and anisotropic NdFeB magnets. The process consists of current-applied pressing the melt-spun powders to obtain isotropic precursor subsequent current-applied deforming the precursor to obtain textured magnet.[2-3] (omitted)

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화학기상응축법을 이용한 Si-C-N Precursor 분말의 합성 및 특성평가 (Synthesis and Characterization of Si-C-N Precursor by Using Chemical Vapor Condensation Method)

  • 김형인;김대정;홍진석;소명기
    • 한국세라믹학회지
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    • 제39권8호
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    • pp.783-788
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    • 2002
  • 본 연구에서는 TMS[Tetramethylsilane:Si($CH_3)_4$], $NH_3$$H_2$를 이용하여 나노크기의 Si-C-N precursor 분말을 합성하기 위하여 CVC법을 이용하였으며 반응온도, TMS/$NH_3$ 비 그리고 TMS/$H_2$ 비를 변화시켰다. XRD와 FESEM 분석을 통해서 결정상과 입자의 크기 그리고 입자의 형태를 관찰하고자 하였으며, 그 결과 제조된 분말은 모든 실험 조건하에서 87∼130 nm 크기를 지닌 균일한 구형의 비정질 분말이 얻어졌다. 입자 크기는 반응온도의 감소에 따라 감소하였으며, 또한 TMS/$NH_3$, TMS/$H_2$ 비가 작아질수록 감소하였다. EA 분석 결과 제조된 분말은 Si, N, C, H로 이루어졌음을 알 수 있었으며 FT-IR를 통하여 Si-N, C-N, Si-C 결합을 가진 Si-C-N precursor 분말이 제조되었다

Optical and electrical property of Indium-doped ZnO (IZO) grown by Atomic Layer Deposition (ALD) using Et2InN(TMS)2 as In precursor and H2O oxidant

  • 조영준;장효식
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.421.1-421.1
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    • 2016
  • We studied indium-doped zinc oxide (IZO) film grown by atomic layer deposition (ALD) as transparent conductive oxide (TCO). A variety of TCO layer, such as ZnO:Al (AZO), InSnO2(ITO), Zn (O,S) etc, has been grown by various method, such as ALD, chemical vapor deposition (CVD), sputtering, laser ablation, sol-gel technique, etc. Among many deposition methods, ALD has various advantages such as uniformity of film thickness, film composition, conformality, and low temperature deposition, as compared with other techniques. In this study, we deposited indium-doped zinc oxide thin films using diethyl[bis(trimethylsilyl)amido]indium [Et2InN(TMS)2] as indium precursor, DEZn as zinc precursor and H2O as oxidant for ALD and investigated the optical and electrical properties of IZO films. As an alternative, this liquid In precursor would has several advantages in indium oxide thin-film processes by ALD, especially for low resistance indium oxide thin film and high deposition rate as compared to InCp, InCl3, TMIn precursors etc. We found out that Indium oxide films grown by Et2InN(TMS)2 and H2O precursor show ALD growth mode and ALD growth window. We also found out the different growth rate of Indium oxide as the substrate and investigated the effect of the substrate on Indium oxide growth.

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