• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.628-635
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• 2004

The characteristic of thin film resistor with low TCR( temperature coefficient of resistance ) and high precision are studied. The thin film resistor for 1/4W was fabricated and characteristic of these resistors was investigated. The fabricated device had the thickness of $2.48{\leqq}$ and the resistivity of $0.27{\omega}mm$. The electrical characteristic was evaluated by HP 4339B and 4284A instruments with HP l6339A. The profile of trimmed structure was also measured by non contact interferometer. The change of resistance and TCR increased with increasing roughness and resistance. To reduce the effect of stress annealing treatment was performed in the range of 563 to 623 K after trimming. The characteristic was improved after annealing. It is expected the fabricated device can be useful for high precision and low TCR. Fabricated thin film resistor has average deviation of resistance less than $0.35{\%}$ and TCR within 60.60ppm/K.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.13-20
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• 1995

To develope a high precision TiAIN thin film resistor, TiAIN films were deposited on A1$_{2}$03 substrates by reactive planar magnetron cosputtering from Ti and Al targets in an Ar-N$_{2}$ atmosphere. The characteristics of the TiAIN thin film were controlled by changing of the R.F. power on Ti and Al targets, and the N$_{2}$ partial pressure. The high precision TiAIN thin film resistor with TCR(Temperature Coefficient of Resistance) of less than 10ppm/.deg. C was obtained under the R.F. power condition of 160(w)/240(w) to Ti and Al targets at the N$_{2}$ partial pressure of 7*10$^{-5}$ Torr. The composition of these films were investigated by XRD, SEM and EDS.

• Journal of Electrical Engineering and Technology
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• v.2 no.4
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• pp.525-531
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• 2007

Ni(75 wt.%)-Cr(20 wt.%)-Al(3 wt.%)-Mn(4 wt.%)-Si(1 wt.%) alloy thin films were prepared using the DC magnetron sputtering process by varying the sputtering conditions such as power, pressure, substrate temperature, and post-deposition annealing temperature in order to fabricate a precision thin film resistor. For all the thin film resistors, sheet resistance, temperature coefficient of resistance (TCR), and crystallinity were analyzed and the effects of sputtering conditions on their properties were also investigated. The oxygen content and TCR of Ni-Cr-Al-Mn-Si resistors were decreased by increasing the sputtering pressure. Their sheet resistance, TCR, and crystallinity were enhanced by elevating the substrate temperature. In addition, the annealing of the resistor thin films in air at a temperature higher than $300^{\circ}C$ lead to a remarkable rise in their sheet resistance and TCR. This may be attributed to the improved formation of NiO layer on the surface of the resistor thin film at an elevated temperature.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.1 s.34
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• pp.1-7
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• 2005

The effect of trimming process to adjust accurate resistance of a thin-film resistor was studied with respect to low temperature coefficient of resistance(TCR) and high precision. The characteristics of a thin-film resistor fabricated by sputtering were investigated depending on trimming condition and annealing temperature. Measured results showed that the characteristic of a thin-film resistor was degraded with increased trimming speed. However, an average resistance deviation and a TCR were improved to $0.26\%$ and 52.77[ppm/K], respectively, through annealing treatment. Also, thin-film resistors with 1 k$\Omega$ and 10k$\Omega$ showed better performance compared to a resistor with 100k$\Omega$. The Optimal trimming speed and annealing temperature were 20mm/sec and 539K, respectively, and under this optimal condition, a thin-film resistor with an average resistance deviation of $0.31\%$ and a TCR of below 10[ppm/K] was obtained.

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.77-84
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• 1997

Super precision resistor was manufactured by controlling properly the thickness of $TaN_{0.1}$ (negative TCR) and Cr(positive TCR) deposited on cylindrical alumina substrate (diameter: 4 mm, length: 11 mm). Multilayer thin film resistor of $Ta_2O_5/TaN_{0.1}$/Cr/Alumina (substrate) was manufactured by depositing of $Ta_2N_5$ film on $TaN_{0.1}$ film to increase Rs to the level of 1;k{\Omega}/{\box}$ and to passivate the film. Super precision resistor with TCR of $20\pm5 ppm/^{\circ}C$ and Rs of $1\;k{\Omega}/{\box}$ was manufactured by depositing thin layers of about 10 nm $Ta_2O_5$, 100 nm $TaN_{0.1}$ and 50 nm Cr film under the properly controlled sputtering condition.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.168-170
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• 2001

The NiCr is an important material for present thin-film resistor application owing to its low TCR and thermal stability. In this work, the NiCr thin films were deposited on corning glass substrate by reactive magnetron sputtering and the annealing at temperatures range from 300 to $500^{\circ}C$ for 20 min in vacuum. X-ray, AFM, $R_s$(surface leakage current) have been used to study the structural and electrical properties of the NiCr thin films. The high precision NiCr thin films resistor with TCR(temperature coefficient of resistance) of less then 10 ppm/$^{\circ}C$ was obtained under in in-situ annealing at $300^{\circ}C$ on Cr buffer layer substrate. It is clear that the NiCr thin-films resistor electrical properties are low TCR related with it's annealing and buffer layer condition. NiCr thin film resistor having a good thermal stability and low TCR properties are expected for the application to the dielectric material of passive component.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.81-84
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• 2004

The NiCr is an important material for present thin-film resistor application owing to its low TCR and thermal stability. In this work, the NiCr thin films were deposited on coming glass substrate by reactive magnetron sputtering and the annealing at temperatures range from 300 to $500^{\circ}C$ for 20 min in vacuum. X-ray, AFM, $R_s$(surface leakage current) have been used to study the structural and electrical properties of the NiCr thin films. The high precision NiCr thin films resistor with TCR(temperature coefficient of resistance) of less then $10\;ppm/^{\circ}C$ was obtained under in in-situ annealing at $300^{\circ}C$ on Cr buffer layer substrate. It is clear that the NiCr thin-films resistor electrical properties are low TCR related with it's annealing and buffer layer condition. NiCr thin film resistor having a good thermal stability and low TCR properties are expected for the application to the dielectric material of passive component.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.537-540
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• 2001

This paper presents the characteristics of Ta-N thin-film for high precision resistors, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4~16 %)$N_2$). Structural properties studied using X-ray diffraction(XRD) indicate the presence of TaN, $Ta_3N_5$ or a mixture of Ta-N phases in the films depending on the amount of nitrogen in the sputtering gas. The chemical composition are investigated by auger electro spectroscopy(AES). The optimized conditions of Ta-N thin-film resistors were deposited in 4 % $N_2$ gas flow ratio. Under optimum conditions, the Ta-N thin-film resistors are obtained a high resistivity, $\rho=305.7{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-36 $ppm/^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.537-540
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• 2001

This paper presents the characteristics of Ta-N thin-(ibm for high precision resistors, which were deposited oni substrate by DC reactive magnetorn sputtering in an argon-nitrogen atmosphere(Ar-(4∼16%)N$_2$). Sturcutural properties sutided using X-ray diffraction (XRD) indicate the presence of TaN, Ta$_3$N$\sub$5/ or a mixture of Ta-N phases in the films depending on the amount of nitrogen in the sputtering gas. The chemical composition are investigated by auger electro spectroscopy(AES). The optimized conditions of Ta-N thin-film resistors were deposited in 4 % N$_2$ gas flow ratio. Under optimum conditions, the Ta-N thin-film resistors are obtained a high resistivity, $\rho$=305.7 ${\mu}$Ωcm, a low temperature coefficient of resistance, TCR=-36 ppm/$^{\circ}C$.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.3
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• pp.445-451
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• 2016

General fuse elements of solution for fast acting operation characteristics made using silver or silver alloy, those are not able to dominate cost competition to the advanced global leaders that have not only high technology but competitive price. In this study, the method that compose the fuse elements manufactured solution of fast acting operation characteristics by using precision multi-layer thin film plating and helical cutting process from low-priced copper metal. Furthermore, in order to move rated current line of fuse due to the heat loses, the manufacture construction method of fixed resistor is introduced, and then Ni-P plating layer and Sn plating layer are introduced multiply for controling fine opening time characteristics. So this study can establish the high productive and low-priced production method.