• Biotechnology and Bioprocess Engineering:BBE
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• v.10 no.3
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• pp.212-217
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• 2005

Desorption/ionization on silicon mass spectrometry (DIOS-MS) is a relatively new laser desorption/ionization technique for mass spectrometry without employing an organic matrix. This present study was carried to survey the experimental factors to improve the efficiency of DIOS-MS through electrochemical etching condition in structure and morphological properties of the porous silicon. The porous structure of silicon structure and its properties are crucial for the better performance of DIOS-MS and they can be controlled by the suitable selection of electrochemical conditions. The fabrication of porous silicon and ion signals on DIOS-MS were examined as a function of silicon orientation, etching time, etchant, current flux, irradiation, pore size, and pore depth. We have also examined the effect of pre- and post-etching conditions for their effect on DIOS-MS. Finally, we could optimize the electrochemical conditions for the efficient performance of DIOS-MS in the analysis of small molecule such as amino acid, drug and peptides without any unknown noise or fragmentation.

• Transactions on Electrical and Electronic Materials
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• v.14 no.1
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• pp.32-35
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• 2013

In this paper, a manufacturing process was developed for fabricating high-quality AlGaN/GaN high electron mobility transistors (HEMTs) on silicon carbide (SiC) substrates. Various conditions and processing methods regarding the ohmic contact and pre-metal-deposition $BCl_3$ etching processes were evaluated in terms of the device performance. In order to obtain a good ohmic contact performance, we tested a Ti/Al/Ta/Au ohmic contact metallization scheme under different rapid thermal annealing (RTA) temperature and time. A $BCl_3$-based reactive-ion etching (RIE) method was performed before the ohmic metallization, since this approach was shown to produce a better ohmic contact compared to the as-fabricated HEMTs. A HEMT with a 0.5 ${\mu}m$ gate length was fabricated using this novel manufacturing process, which exhibits a maximum drain current density of 720 mA/mm and a peak transconductance of 235 mS/mm. The X-band output power density was 6.4 W/mm with a 53% power added efficiency (PAE).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.407-408
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• 2005

High surface area electrodes for aluminum electrolytic capacitors are produced by AC electrochemical processes. Optimization of crystallographic etch pit growth on aluminium during AC etching of cathode film for aluminium as electrolytic capacitor has been established. In this work, we present the observations of pit distributions by galvanostatic measurements. The effects of electrolyte concentration, current density, frequency, various pre-treatments and etching time have been studied. The specimen was pretreated in 0.5M NaOH and 1M HCl at $40\sim60^{\circ}C$, and transferred into a cell containing 1M HCl, then various mol $H_2SO_4$ etchant was added. Pit size distributions were determined with scanning electron microscopy (SEM).

• ETRI Journal
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• v.27 no.5
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• pp.484-490
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• 2005

We fabricated 40 Gb/s front-end optical receivers using spot-size converter integrated waveguide photodiodes (SSC-WGPDs). The fabricated SSC-WGPD chips showed a high responsivity of approximately 0.8 A/W and a 3 dB bandwidth of approximately 40 GHz. A selective wet-etching method was first adopted to realize the required width and depth of a tapered waveguide. Two types of electrical pre-amplifier chips were used in our study. One has higher gain and the other has a broader bandwidth. The 3 dB bandwidths of the higher gain and broader bandwidth modules were about 32 and 42 GHz, respectively. Clear 40 Gb/s non-return-to-zero (NRZ) eye diagrams showed good system applicability of these modules.

• The Research Journal of the Costume Culture
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• v.11 no.1
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• pp.66-74
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• 2003

This study is to improve the worst lightfastness of a natural dye. To modify the fiber surface, low temperature oxygen plasma was carried out on silk fabric. The result is followed below after the examination of surface shape, dyeability, color change, UV absorbent influence and lightfastness. 1. When electric discharge outputs are 60W, 80W and 100w, and processing times are 10minutes, 20minutes and 40minutes, the etching effect of surface increased as electric discharge outputs and processing times increased. 2. When examined UV absorbent for 5hours, 10hours, 20hours, 40hours and 80hours, the value changes of E are 1.47, 2.51, 2.91, 3.71, 4.51 and 5.31 in case of Al pre-mordanting/ prasma 80W, 20min./ UVabsorbent 5% (100:1), 2.31, 2.47, 3.84, 3.90, 3.61 and 4.42 in case of Al pre-mordanting/prasma 80W, 20min.1 UV absorbent 5% (o.w.f.). The lightfastness decreased when UV absorbent increased. 3. Dyeability of the samples pre-treated with five different methods was in the following order: plasma processing for 20minutes at 60W/Al pre-mordanting > Al pre-mordanting > plasma processing for 20minutes at 60W > Al after-mordanting. non mordanting Plasma treatment had superior effect on dyeability. 4. When UV absorbent was applied in fabric, the sample under higher electric discharge out puts showed more effective in improving lightfastness.

• Journal of the Korean Society for Heat Treatment
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• v.18 no.1
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• pp.24-28
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• 2005

New post plasma nitriding can achieve a high uniformity that have been difficult in DC nitriding and have a high productivity comparable to gas nitriding. However, it has not a enough high nitriding potential for a rapid nitriding, because surface activation or ion etching in the general plasma nitriding cannot be expected. Thus, in this study, the effects of pre-treatments with oxidation and reduction gas have been investigated to improve the nitriding kinetics of post plasma nitriding. An effective pre-treatment consisting of oxidation and reduction resulted in the increase of surface energy of STD 11. This induced the surface hardness and the effective nitriding depth of STD 11. It is thought that the increase of the surface energy and the surface area with pre-treatment promote the nucleation of nitriding layer.

• Restorative Dentistry and Endodontics
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• v.37 no.4
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• pp.207-214
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• 2012

Objectives: This study evaluated the influence of chlorhexidine (CHX) on the microtensile bonds strength (${\mu}TBS$) of resin core with two adhesive systems to dentin in endodontic cavities. Materials and Methods: Flat dentinal surfaces in 40 molar endodontic cavities were treated with self-etch adhesive system, Contax (DMG) and total-etch adhesive system, Adper Single Bond 2 (3M ESPE) after the following surface treatments: (1) Priming only (Contax), (2) CHX for 15 sec + rinsing + priming (Contax), (3) Etching with priming (Adper Single Bond 2), (4) Etching + CHX for 15 sec + rinsing + priming (Adper Single Bond 2). Resin composite build-ups were made with LuxaCore (DMG) using a bulk method and polymerized for 40 sec. For each condition, half of specimens were submitted to ${\mu}TBS$ after 24 hr storage and half of them were submitted to thermocycling of 10,000 cycles between $5^{\circ}C$ and $55^{\circ}C$ before testing. The data were analyzed using ANOVA and independent t-test at a significance level of 95%. Results: CHX pre-treatment did not affect the bond strength of specimens tested at the immediate testing period, regardless of dentin surface treatments. However, after 10,000 thermocycling, all groups showed reduced bond strength. The amount of reduction was greater in groups without CHX treatments than groups with CHX treatment. These characteristics were the same in both self-etch adhesive system and total-etch adhesive system. Conclusions: 2% CHX application for 15 sec proved to alleviate the decrease of bond strength of dentin bonding systems. No significant difference was shown in ${\mu}TBS$ between total-etching system and self-etching system.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.175-175
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• 2000

Si(100) surfaces were exposed to gas-phase thermal-energy hydrogen atoms, H(g). We find that thermal H(g) atoms etch, amorphize, or penetrate into the crystalline silicon substrate, depending on the employed Ts range during the H(g) exposure. We find that etching is enhanced as Ts is lowered in the 300-700K range, while amorphous silicon hydride (a-Si:H) formation dominates at a Ts below 300K. This result was well explained by the fact that formation of the etching precursor, SiHx(a), and amorphization are both facilitated by a lower Ts, whereas the final step for etching, SiH3(a) + H(g) longrightarrow SiH3(g), is suppressed at a lower Ts. we also find that direct absorption of H(g) by the crystalline bulk of Si(100) substrate occurs within a narrow Ts window of 420-530K. The bulk-absorbed hydrogen evolved out molecularly from Si(100) at a Ts 80-120K higher than that for surface monohydride phase ($\beta$1) in temperature-programmed desorption. This bulk-phase H uptake increased with increasing H(g) exposure without saturation within our experimental limits. Direct absorption of H(g) into the bulk lattice occurs only when the surface is atomically roughened by surface etching. While pre-adsorbed hydrogen atoms on the surface, H(a), were readily abstracted and replaced by D(g), the H atoms previously absorbed in the crystalline bulk were also nearly all depleted, albeit at a much lower rate, by a subsequent D(g) at the peak temperature in TPD from the substrate sequentially treated with H(g) and D(g), together with a gas phase-like H2 Raman frequency of 4160cm-1, will be presented.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.34 no.2
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• pp.125-133
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• 2024

Objectives: The aim of this study is to develop a comprehensive Occupational Safety and Health (OSH) guide for maintenance tasks in semiconductor processing, specifically focusing on etching, deposition, and ion implantation processes. Methods: The development of the OSH guide involved a literature review, consultations with industry experts, and field investigations. It concentrates on Maintenance Work (MW) operations in these specialized areas. Results: The result is a detailed OSH guide tailored to MW in etching, deposition, and ion implantation facilities within semiconductor processing. This guide is structured to assist maintenance workers through pre-, during and post-MW phases, ensuring easy comprehension and adherence to safety protocols. It highlights the necessity of safety and health measures throughout the MW process to protect personnel. The guide is enriched with real-life scenarios and visual aids, including cartoons and photographs, to aid in the understanding and implementation of safety and health principles. Conclusions: This OSH guide is designed to enhance the protection of workers engaged in maintenance activities in the electronics sector, particularly in semiconductor manufacturing. It aims to improve compliance with safety and health standards in these high-risk environments.

• Journal of Adhesion and Interface
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• v.4 no.2
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• pp.21-29
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• 2003

Hot AC anodising has been evaluated us pre-treatment for aluminium prior to structural adhesive bonding. Phosphoric and sulphuric acid hot AC anodising showed very promising adhesion promoter capabilities with durability comparable with the best standard DC anodising procedures. AC anodising does not required etching prior to anodising and offers u pre-treatment time down to 20 seconds. The interface/interphase between the aluminium substrate and the adhesive was investigated in order to get a better understanding of the involved adhesion mechanisms and to explain the long-tenn properties. The alkaline medium formed at the oxide layer/adhesive interface has been shown to induce a partial dissolution of the oxide layer leading to the formation of metallic ions which diffuse in the adhesive (EPMA measurements). The effect of diffusion of the Al ions on adhesion and joint durability is still uncertain but studies showed that pre-bond moisture affected the joints durability and to some extent the diffusion length. specially for DC anodised samples. So far no direct correlation could be established between the diffusion length d and the joints durability but new trials with better control over the elapsed time between bonding and adhesive curing are expected to help getting a better understanding of the involved mechanisms.