• Korean Journal of Materials Research
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• v.8 no.2
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• pp.131-134
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• 1998

The deposition rate and surface morphology of Al films deposited by MOCVD have been studied on the $SiO_{2}$ and TiN(60nm/Si) substrates. A1 films were deposited with the pyrolysis of dimethylethylamine alane(DMEAA). When A1 was deposited on Ti& substrate without carrier gas, Al deposition rate increased with H\ulcorner pre- treatment. The $H_2$ gas enhances the CVD reaction at the substrate surface. When Al was deposited on $SiO_{2}$ substrate, $H_2$ plasma pretreatment reduced Al incubation time and made a dense Al film compared with Ar plasma pre- treatment or no pretreatment.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.3
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• pp.472-476
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• 2007

In this study, we investigated methods for p-type ZnO deposition as well as stability enhancement of its properties. The film was prepared by co-depositing AlAs and ZnO in a RF magnetron sputtering system. Property variation was monitored with photoluminescence and Hall measurements by stressing the films at $250^{\circ}C$ for various duration upto 144 hours. Results indicated that co-deposition is a useful method for p-type ZnO preparation. In particular, pre-treatment in 30% $H_2O_2$ for 1min was observed to be effective in reducing the property variation taking place during the subsequent high temperature processes.

• Journal of the Semiconductor & Display Technology
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• v.7 no.2
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• pp.59-62
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• 2008

The Lifetime of OLEDs by ITO/glass substrates cleaning method and cathode deposition method were investigated in the fabrication of green light emitting OLEDs with $Alq_3$-C545T fluorescent system. In our experiments, the optimum cleaning method was obtained at last processing of boiling IPA(isopropyl alcohol). And the optimum deposition methode was obtained at 3 steps deposition rate of Al. The deposition rate of 3 steps progressed changing from $0.5\AA$/sec to $3\AA$/ sec. The green light emitting OLED with plasma treatment at 150W for 2 minutes showed the highest luminance and efficiency of 20000 cd/$m^2$ and 16 lm/W. On the contrary, the OLED device without plasma treatment showed much lower performance with the luminance and efficiency of 3500 cd/$m^2$ and 2 lm/W.

• Journal of the Korean institute of surface engineering
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• v.37 no.5
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• pp.243-248
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• 2004

A palladium-nikel(Pd-Ni) alloy composite membrane has been fabricated on microporous nickel support formed with nickel powder. Plasma surface treatment process is introduced as pre-treatment process instead of HCI activation. Pd coating layer was prepared by dc magnetron sputtering deposition after $H_2$ plasma surface treatment. Palladium-nickel alloy composite layer had a fairly uniform and dense surface morphology. The membrane was characterized by permeation experiments with hydrogen and nitrogen gases at temperature of 773 K and pressure of 2.2psi. The hydrogen permeance was 6 ml/minㆍ$\textrm{cm}^2$ㆍatm and the selectivity was 120 for hydrogen/nitrogen($H_2$/$N_2$) mixing gases at 773 K.

• Journal of Electrochemical Science and Technology
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• v.8 no.1
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• pp.15-24
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• 2017

A comparative study was performed on the passivating abilities of surface films generated on lithium titanate (LTO; $Li_4Ti_5O_{12}$) electrodes during pre-cycling at two different rates. The surface film deposited at a faster pre-cycling rate (i.e., 0.5 C) is irregularly shaped and unevenly covers the LTO electrode. Owing to the incomplete coverage of the protective film, this LTO electrode exhibits poor passivating ability. Additional electrolyte decomposition and concomitant film deposition occur during subsequent charge/discharge cycles. As a result of the thick surface film, severe cell polarization occurs and eventually causes cell failure. However, pre-cycling the Li/LTO cell at a slower rate (0.1 C) improves cell polarization and capacity retention; this occurs because the surface film uniformly covers the LTO electrode and provides strong passivation. Accordingly, there is no significant film deposition during subsequent charge/discharge cycling. Additionally, self-discharge is reduced during high-temperature storage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.10
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• pp.883-888
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• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECYD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of 5.3 kgf/cm$^2$to 15.5 kgf/cm$^2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.176.2-176.2
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• 2009

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.257-258
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• 2006

ZnO thin films were prepared by RF magnetron sputter deposition on p-Si(100) wafer with various cooling rates of substrate temperature such as the substrates were pre-heated to $400^{\circ}C$ before the deposition and then cooled down naturally or slowly to $300^{\circ}C$, $200^{\circ}C$, $100^{\circ}C$, and R.T., by the temperature controller during the deposition. The crystall me and micro-structural characteristics of the films were investigated by XRD and SEM ZnO films which cooled down naturally or slowly by temperature controller during deposition, especially the film were deposited with cooling down from $400^{\circ}C$ to $200^{\circ}C$ slowly, showed the most outstanding c-axis preferred orientation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.190-193
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• 2002

The processing technology of organic thin-film transistors (Ons) performances have improved fur the last decade. Gate insulator layer has generally used inorganic layer, such as silicon oxide which has properties of a low electrical conductivity and a high breakdown field. However, inorganic insulating layers, which are formed at high temperature, may affect other layers termed on a substrate through preceding processes. On the other hand, organic insulating layers, which are formed at low temperature, dose not affect pre-process. Known wet-processing methods for fabricating organic insulating layers include a spin coating, dipping and Langmuir-Blodgett film processes. In this paper, we propose the new dry-processing method of organic gate dielectric film in field-effect transistors. Vapor deposition polymerization (VDP) that is mainly used to the conducting polymers is introduced to form the gate dielectric. This method is appropriate to mass production in various end-user applications, for example, flat panel displays, because it has the advantages of shadow mask patterning and in-situ dry process with flexible low-cost large area displays. Also we fabricated four by four active pixels with all-organic thin-film transistors and phosphorescent organic light emitting devices.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.84.1-84.1
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• 2011

Typical solid oxide fuel cells (SOFCs) have limited applications because they operate at high temperature due to low ionic conductivity of electrolyte. Thin film solid oxide fuel cell with yttria stabilized zirconia (YSZ) electrolyte is developed to decrease operating temperature. Pt/YSZ/Pt thin film SOFC was fabricated on anodic aluminum oxide (AAO). The crystalline structure of YSZ electrolyte by sputter is heavily depends on the roughness of porous Pt layer, which results in pinholes. To deposit YSZ electrolyte without pinholes and electrical shortage, it is necessary to deposit smoother and denser layer between Pt anode layer and YSZ layer by sputter. Atomic Layer Deposition (ALD) technique is used to deposit pre-YSZ layer, and it improved electrolyte quality. 300nm thick Bi-layered YSZ electrolyte was successfully deposited without electrical shortage.