U, Chang-Ho;Kim, Yeong-Lee;An, Cheol-Hyeon;Kim, Dong-Chan;Gong, Bo-Hyeon;Bae, Yeong-Suk;Seo, Dong-Gyu;Jo, Hyeong-Gyun
Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
/
2009.11a
/
pp.5-5
/
2009
Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.
Kim, Jun-Kwan;Song, Jung-Hoon;An, Hye-Jin;Choi, Hye-Kyoung;Jeong, So-Hee
Proceedings of the Korean Vacuum Society Conference
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2012.08a
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pp.189-189
/
2012
Lead sulfide (PbS) nanocrystal quantum dots (NQDs) are promising materials for various optoelectronic devices, especially solar cells, because of their tunability of the optical band-gap controlled by adjusting the diameter of NQDs. PbS is a IV-VI semiconductor enabling infrared-absorption and it can be synthesized using solution process methods. A wide choice of the diameter of PbS NQDs is also a benefit to achieve the quantum confinement regime due to its large Bohr exciton radius (20 nm). To exploit these desirable properties, many research groups have intensively studied to apply for the photovoltaic devices. There are several essential requirements to fabricate the efficient NQDs-based solar cell. First of all, highly confined PbS QDs should be synthesized resulting in a narrow peak with a small full width-half maximum value at the first exciton transition observed in UV-Vis absorbance and photoluminescence spectra. In other words, the size-uniformity of NQDs ought to secure under 5%. Second, PbS NQDs should be assembled carefully in order to enhance the electronic coupling between adjacent NQDs by controlling the inter-QDs distance. Finally, appropriate structure for the photovoltaic device is the key issue to extract the photo-generated carriers from light-absorbing layer in solar cell. In this step, workfunction and Fermi energy difference could be precisely considered for Schottky and hetero junction device, respectively. In this presentation, we introduce the strategy to obtain high performance solar cell fabricated using PbS NQDs below the size of the Bohr radius. The PbS NQDs with various diameters were synthesized using methods established by Hines with a few modifications. PbS NQDs solids were assembled using layer-by-layer spin-coating method. Subsequent ligand-exchange was carried out using 1,2-ethanedithiol (EDT) to reduce inter-NQDs distance. Finally, Schottky junction solar cells were fabricated on ITO-coated glass and 150 nm-thick Al was deposited on the top of PbS NQDs solids as a top electrode using thermal evaporation technique. To evaluate the solar cell performance, current-voltage (I-V) measurement were performed under AM 1.5G solar spectrum at 1 sun intensity. As a result, we could achieve the power conversion efficiency of 3.33% at Schottky junction solar cell. This result indicates that high performance solar cell is successfully fabricated by optimizing the all steps as mentioned above in this work.
An, Sehoon;Lee, Geun-Hyuk;Jang, Seong Woo;Hwang, Sehoon;Yoon, Jung Hyeon;Lim, Sang-Ho;Han, Seunghee
Proceedings of the Korean Vacuum Society Conference
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2016.02a
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pp.129-129
/
2016
Graphene, as a single layer of $sp^2$-bonded carbon atoms packed into a 2D honeycomb crystal lattice, has attracted much attention due to its outstanding properties. In order to synthesize high quality graphene, transition metals, such as nickel and copper, have been widely employed as catalysts, which needs transfer to desired substrates for various applications. However, the transfer steps are not only complicated but also inevitably induce defects, impurities, wrinkles, and cracks of graphene. Furthermore, the direct synthesis of graphene on dielectric surfaces has still been a premature field for practical applications. Therefore, cost effective and concise methods for transfer-free graphene are essentially required for commercialization. Here, we report a facile transfer-free graphene synthesis method through nickel and carbon co-deposited layer. In order to fabricate 100 nm thick NiC layer on the top of $SiO_2/Si$ substrates, DC reactive magnetron sputtering was performed at a gas pressure of 2 mTorr with various Ar : $CH_4$ gas flow ratio and the 200 W DC input power was applied to a Ni target at room temperature. Then, the sample was annealed under 200 sccm Ar flow and pressure of 1 Torr at $1000^{\circ}C$ for 4 min employing a rapid thermal annealing (RTA) equipment. During the RTA process, the carbon atoms diffused through the NiC layer and deposited on both sides of the NiC layer to form graphene upon cooling. The remained NiC layer was removed by using a 0.5 M $FeCl_3$ aqueous solution, and graphene was then directly obtained on $SiO_2/Si$ without any transfer process. In order to confirm the quality of resulted graphene layer, Raman spectroscopy was implemented. Raman mapping revealed that the resulted graphene was at high quality with low degree of $sp^3$-type structural defects. Additionally, sheet resistance and transmittance of the produced graphene were analyzed by a four-point probe method and UV-vis spectroscopy, respectively. This facile non-transfer process would consequently facilitate the future graphene research and industrial applications.
Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
/
2009.06a
/
pp.137-137
/
2009
Thin-film transistors (TFTs) that can be prepared at low temperatures have attracted much attention due to the great potential for flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited by low field effect mobility or rapidly degraded after exposing to air in many cases. Another approach is amorphous oxide semiconductors. Amorphous oxide semiconductors (AOSs) have exactly attracted considerable attention because AOSs were fabricated at room temperature and used lots of application such as flexible display, electronic paper, large solar cells. Among the various AOSs, a-IGZO was considerable material because it has high mobility and uniform surface and good transparent. The high mobility is attributed to the result of the overlap of spherical s-orbital of the heavy pest-transition metal cations. This study is demonstrated the effect of thickness channel layer from 30nm to 200nm. when the thickness was increased, turn on voltage and subthreshold swing were decreased. a-IGZO TFTs have used a shadow mask to deposit channel and source/drain(S/D). a-IGZO were deposited on SiO2 wafer by rf magnetron sputtering. using power is 150W, working pressure is 3m Torr, and an O2/Ar(2/28 SCCM) atmosphere at room temperature. The electrodes were formed with Electron-beam evaporated Ti(30nm) and Au(70nm) structure. Finally, Al(150nm) as a gate metal was evaporated. TFT devices were heat treated in a furnace at $250^{\circ}C$ in nitrogen atmosphere for an hour. The electrical properties of the TFTs were measured using a probe-station to measure I-V characteristic. TFT whose thickness was 150nm exhibits a good subthreshold swing(S) of 0.72 V/decade and high on-off ratio of 1E+08. Field effect mobility, saturation effect mobility, and threshold voltage were evaluated 7.2, 5.8, 8V respectively.
$LiFePO_4$ is an attractive cathode material due to its low cost, good cyclability and safety. But it has low ionic conductivity and working voltage impose a limitation on its application for commercial products. In order to solve these problems, the iron($Fe^{2+}$)site in $LiFePO_4$ can be substituted with other transition metal ions such as $Mn^{2+}$ in pursuance of increase the working voltage. Also, reducing the size of electrode materials to nanometer scale can improve the power density because of a larger electrode-electrolyte contact area and shorter diffusion lengths for Li ions in crystals. Therefore, we chose electrospinning as a general method to prepare $Li[Fe_{0.9}Mn_{0.1}]PO_4$ to increase the surface area. Also, there have been very a few reports on the synthesis of cathode materials by electrospinning method for Lithium ion batteries. The morphology and nanostructure of the obtained $Li[Fe_{0.9}Mn_{0.1}]PO_4$ nanofibers were characterized using scanning electron microscopy(SEM). X-ray diffraction(XRD) measurements were also carried out in order to determine the structure of $Li[Fe_{0.9}Mn_{0.1}]PO_4$ nanofibers. Electrochemical properties of $Li[Fe_{0.9}Mn_{0.1}]PO_4$ were investigated with charge/discharge measurements, electrochemical impedance spectroscopy measurements(EIS).
Transactions of the Korean hydrogen and new energy society
/
v.24
no.3
/
pp.223-229
/
2013
Polymer Electrolyte Membrane Fuel Cell (PEMFC) is a power generation system to convert chemical energy of fuels and oxidants to electricity directly by electrochemical reactions. As a catalyst support for PEMFCs, carbon black has been generally used due to its large surface area and high electrical conductivity. However, under certain circumstances (start up/shut down, fuel starvation, ice formation etc.), carbon supports are subjected to serve corrosion in the presence of water. Therefore, it would be desirable to switch carbon supports to corrosion-resistive support materials such as metal oxide. $TiO_2$ has been attractive as a support with its stability in fuel cell operation atmosphere, low cost, commercial availability, and the ease to control size and structure. However, low electrical conductivity of $TiO_2$ still inhibits its application to catalyst support for PEMFCs. In this paper, to explore feasibility of $TiO_2$ as a catalyst support for PEMFCs, $TiO_2$ nanofibers were synthesized by electrospinning and calcinated at 600, 700, 800 and $900^{\circ}C$. Effects of calcination temperature on crystal structure and electrical conductivity of electrospun $TiO_2$ nanofibers were examined. Electrical conductivity of $TiO_2$ nanofibers increased significantly with increasing calcination temperature from $600^{\circ}C$ to $700^{\circ}C$ and then increased gradually with increasing the calcination temperature from $700^{\circ}C$ to $900^{\circ}C$. It was revealed that the remarkable increase in electrical conductivity could be attributed to phase transition of $TiO_2$ nanofibers from anatase to rutile at the temperature range from $600^{\circ}C$ to $700^{\circ}C$.
Journal of Elementary Mathematics Education in Korea
/
v.21
no.2
/
pp.291-308
/
2017
In 1946, many native korean mathematical terms are coined newly by the ministry of education of USAMGIK(the United States Army Military Government in Korea) through referring to the opinions of various circles. In native korean mathematical terms created at the time, many of them are coined, either by using native korean words corresponding to the meaning of chines characters, or by abbreviating newly coined native korean mathematical terms. However, in less than 20 years, about half of native korean mathematical terms made in 1946~1947 has been went back to chines character mathematical terms, and most of those chines character mathematical terms has been used up to now from then. Although, in the teaching and learning of mathematics, the discomfort of chinese characters mathematical terms is pointed out and it is claimed that the use of native korean mathematical terms is helpful, it is not everything to hurry to use native korean mathematical terms. Attempts to convert chinese characters mathematical terms into native korean mathematical terms should be prudent. When a certain native korean mathematical term is used, if it must be used only because it is a native korean mathematical term, then the term has no choice but to fail. In this paper, we propose the following three implications as conclusions for the successful use of native korean mathematical terms in this viewpoint. First, attempts to coin native korean mathematical terms should be continued. Second, it is necessary to identify the survival power of well-preserved native korean mathematical terms. Third, it is necessary to identify the failure factors of native korean mathematical terms which does not survive today.
The Earth outer core accomodates moderately considerable amount of lighter elements than pure iron itself. Hydrogen is one of the possible candidates of minor constituents in the outer core. It would be worth while to extend for the pressure effect on the solubility of hydrogen in the metal-hydrides including iron hydride. In view of hydrogen being one of the potential substitutes for petroleum, searching a more efficient way for storing hydrogen in the form of hydrides is of considerable value. For two purposes, $TiH_2$was selected among lot of hydrides for its characteristics under pressure and temperature. There have been two kinds of experiment carried out on $TiH_2$ under different experimental conditions. As one of these attempts, polycrystalline $TiH_2$ was loaded up to 15 GPa stepwise at the constant temperature 500${\circ}$ using a piston-cylinder diamond anvil cell equipped with a miniature furnace of an electric power supply. The X-ra diffraction technique was employed on the quenched samples after the simultaneous high pressure and temperature treatments. During these high pressure-temperature runs, and irreversible phase of $TiH_2$ has been observed at the pressures higher than 11.3 GPa, which would be assigned to the orthorhombic crystal system as one of the new phase(s) of $TiH_2$. Molar volume change on this phase transition is ∼10%.
The $HCO^+$ 1-0 transition line was observed toward the Sgr B2 region in our Galactic center. We found that there exist two large-scale velocity structures of $v_{lsr}\;{\sim}50\;and\;{\sim}100kms^{-1}$, which are thought to interact with each other. A new gas clump 'OF28 Cloud'('Odenwald & Fazio FIR 38' Cloud), showing different chemical and kinematical properties with the Sgr B2(M) cloud, was found in the $50kms^{-1}$ gas component. Toward the core of this component, we derive the $HCO^+$ total column density, $N(HCO^+)=(2-5){\times}10^{14}cm^{-2}$ and the mass $M=1{\times}10^6M_{\odot}$, by estimating its size, ${\sim}15pc$, from the half-power width of this component. We also found that there is a highly turbulent component in this region in the velocity range of about $100kms^{-1}$. The column density of this component is $N(HCO^+)=1{\times}10^{13}cm^{-2}$. The $HCO^+$ in this region may form effectively by the reaction between $C^+$ and OH, which are the elements whose abundances increase rapidly in shocked region.
The objective of this study is to identify the kinematic variables of giant swing backward to handstand as well as individual variations of each athlete performing this skill, which in turn will provide the basis for developing suitable training methods and for improving athlete's performance in actual games. For this end, 3 male athletes, members of the national team, who are in ${\Box}{\Box}H{\Box}{\Box}$ University, have been randomly chosen and their giant swing backward to handstand performance was recorded using two digital cameras and analyzed in 3 dimensional graphics. This study came to the following conclusion. 1. Proper time allocation for giant swing backward to handstand are: Phase 1 should provide enough time to attain energy for swing track of a grand round movement. The phase 3 is to throw the body up high in the air and stay in the air as long as possible to smoothen up the transition to the next stage and the phase 4 should be kept short with the moment arm coefficient of the body reduced. 2. As for appropriate changes of locations of body center, the phase 1 should be comprised of horizontal, perpendicular, compositional to make up a big rotational radius. Up to the Phase 3 the changes of displacements of vertical locations should be a good scale and athlete's body should go up high quickly to increase the perpendicular climbing power 3. When it comes to the speed changes of body center, the vertical and horizontal speed should be spurred by the reaction of the body in Phase 2 and Phase 3. In the Phase 4, fast vertical speed throws the body center up high to ensure enough time for in-the-air movement. 4. The changes of angles of body center are: in Phase 2, shoulder joint is stretching and coxa should be curved up to utilize the body reaction. In the Phase 4, shoulder joint and coxa should be stretched out to get the body center as high as possible in the air for stable landing. 5. The speeds of changes in joints angles are: in the Phase 2 should have the speed of angles of shoulder joints increase to get the body up in the air as quickly as possible. The Phase 3 should have the speed of angles in shoulder joint slow down, while putting the angles of a knee joint up to speed as quickly as possible to ensure enough time for in-the-air movement.
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