• Journal of IKEEE
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• v.25 no.1
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• pp.156-167
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• 2021

In this paper, we propose a digital transceiver unit design for in-building of 5G optical repeaters that extends the coverage of 5G mobile communication network services and connects to a stable wireless network in a building. The digital transceiver unit for driving the proposed 5G optical repeater is composed of 4 blocks: a signal processing unit, an RF transceiver unit, an optical input/output unit, and a clock generation unit. The signal processing unit plays an important role, such as a combination of a basic operation of the CPRI interface, a 4-channel antenna signal, and response to external control commands. It also transmits and receives high-quality IQ data through the JESD204B interface. CFR and DPD blocks operate to protect the power amplifier. The RF transmitter/receiver converts the RF signal received from the antenna to AD, is transmitted to the signal processing unit through the JESD204B interface, and DA converts the digital signal transmitted from the signal processing unit to the JESD204B interface and transmits the RF signal to the antenna. The optical input/output unit converts an electric signal into an optical signal and transmits it, and converts the optical signal into an electric signal and receives it. The clock generator suppresses jitter of the synchronous clock supplied from the CPRI interface of the optical input/output unit, and supplies a stable synchronous clock to the signal processing unit and the RF transceiver. Before CPRI connection, a local clock is supplied to operate in a CPRI connection ready state. XCZU9CG-2FFVC900I of Xilinx's MPSoC series was used to evaluate the accuracy of the digital transceiver unit for driving the 5G optical repeater proposed in this paper, and Vivado 2018.3 was used as the design tool. The 5G optical repeater digital transceiver unit proposed in this paper converts the 5G RF signal input to the ADC into digital and transmits it to the JIG through CPRI and outputs the downlink data signal received from the JIG through the CPRI to the DAC. And evaluated the performance. The experimental results showed that flatness, Return Loss, Channel Power, ACLR, EVM, Frequency Error, etc. exceeded the target set value.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.2
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• pp.213-219
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• 2012

Recently, we are simultaneously exposed by various electromagnetic sources due to an increase of mobile communication services. However, EMF(Electric, Magnetic and Electromagnetic Field) study has been performed mainly about only single frequency. The objective of this paper is to develop an multiple-frequency exposure system for in vitro experiment. The exposure unit for in vitro experiments was designed by radial transmission line type to get broadband characteristics to generate signals of CDMA at 836.5 MHz and WCDMA at 1950 MHz frequency simultaneously. The modulated signals were delivered to the conical antenna through amplifier, digital attenuator and RF combiner. SAR values were obtained by the averaged values of 3 measured values at 9 points in petri dish using the fiber optic temperature probe. The measured return loss was under -15 dB. For 1 W input power, the mean value and standard deviation of SAR were $0.105{\pm}0.019$ for the CDMA frequency and $0.262{\pm}0.055$ for the WCDMA frequency.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.5 s.347
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• pp.35-44
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• 2006

Reflective semiconductor optical amplifiers(R-SOAs) were designed with high gain, wide optical bandwidth, high thermal reliability and wide modulation bandwidth in TO-can package for the transmitter of wavelength division multiplexed-passive optical network(WDM-PON) application. Double trench structure and current block layer were introduced in designing the active layer of R-SOA to enable high speed modulation. The injection power requirement and the viable temperature range of WDM-PON system are experimentally analysed in based on Amplified Spontaneous Emission(ASE)-injected R-SOAs. The effect of the different injection spectrum in the gain-saturated R-SOA was experimentally characterized based on the measurements of excessive intensity noise, Q factor, and BER. The proposed spectral pre-composition method reduces the bandwidth of injection source below the AWG bandwidth and thereby avoids spectrum distortion impeding the intensity noise reduction originated from the amplitude squeezing.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.12 s.354
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• pp.47-54
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• 2006

This work proposes a dual-channel 6b 1GS/s ADC for ultra wide-band communication system applications. The proposed ADC based on a 6b interpolated flash architecture employs wide-band open-loop track-and-hold amplifiers, comparators with a wide-range differential difference pre-amplifier, latches with reduced kickback noise, on-chip CMOS references, and digital bubble-code correction circuits to optimize power, chip area, and accuracy at 1GS/s. The ADC implemented in a 0.18um 1P6M CMOS technology shows a signal-to-noise-and-distortion ratio of 30dB and a spurious-free dynamic range of 39dB at 1GS/s. The measured differential and integral non-linearities of the prototype ADC are within 1.0LSB and 1.3LSB, respectively. The dual-channel ADC has an active area of $4.0mm^2$ and consumes 594mW at 1GS/s and 1.8V.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.6 s.109
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• pp.519-528
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• 2006

This thesis is regarding of fabricating wibro PAM. First of all, we need to set specification based on link budget for wibro communication circumstance in order to develop PAM, then we decided specification concerning of wibro PAM by considering TTAS_Ko_06_0082R1 which is standarded in Korea, and IEEE Std. 802. 16d/e which is international standard. We selected the Doherty structure to increase efficiency, and pre-distorter structure to increase linearity. The fabricated PAM has not only a result of $26.5dB{\pm}1.0dB$ gain characteristics and maximum of -14 dB return loss characteristics in full frequency bands and full output ranges, but also a result of 37 dBc at 4 tone IMD characteristics which is improved result of 843 and a result of 31 dBc spurious characteristics which is improved result of 5 dB at 4.77 MHz offset point in status of having 27 % efficiency in the 26 dBm high power amplifier output signal. We confirmed the suggested structure is better than others by comparing with normal structure, balanced structure and Doherty structure without predistorter.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.10
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• pp.1061-1070
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• 2009

In this paper, we have designed TDL(True-time Delay Line) for eliminating beam-squint occurring in active phased array antenna with large electrical size operated in wide bandwidth, and have tested its electrical performance. The proposed TDL device is composed of 4-bit microstrip delay line structure and MMIC amplifier for compensation of the delay-line loss. The measured results of gain and phase versus delay state satisfy the electrical requirements, also P1dB output power and noise figure meet the requirement. To verify the performance of fabricated TDL, we have simulated the beam patterns of wide-band active phased array antenna using the measured results and have certified the beam pattern compensation performance. As a result of simulated beam pattern compensation with respect to the 675.8 mm size antenna which is operated in X-band, 800 MHz bandwidth, we have reduced the beam squint error of ${\pm}1^{\circ}$ with ${\pm}0.1^{\circ}$. So this TDL module is able to be applied to active phase array antenna system.

• Korean Journal of Optics and Photonics
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• v.31 no.5
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• pp.218-222
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• 2020

In this paper, we have experimentally demonstrated a 2-kW-class spectrally-beam-combined laser with high beam quality, using narrow-linewidth ytterbium-doped polarization-maintaining fiber amplifiers. Five fiber amplifiers with different center wavelengths were implemented for the spectrally-beam-combined laser. The center wavelengths of the five amplifiers were 1062, 1063, 1064, 1065, and 1066 nm, respectively. A phase-modulated laser diode was used as a seed source for each amplifier. The seed sources were modulated by filtered pseudorandom-bit-sequence (PRBS) signals 5 GHz in linewidth. The polarization-maintaining large-mode-area fiber with a core size of 30 ㎛ was used as a delivery fiber to mitigate the stimulated Brillouin scattering (SBS) effect. The laser beams from five amplifiers were spectrally combined by a multilayer dielectric diffraction grating. The maximum output power and beam quality M² of the combined laser were measured to be 2.3 kW and 1.74, respectively.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.5
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• pp.27-37
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• 1999

A CMOS ReadOut Integrated Circuit (ROlC) for InfraRed Focal Plane Array (IRFPA) detector is presented, which is a key component in uncooled thermal imaging systems. The ROIC reads out signals from $64\times64$ Barium Strontium Titanate (BST) infrared detector array, then outputs pixel signals sequentially after amplifying and noise filtering. Various design requirements and constraints have been considered including impedance matching, low noise, low power dissipation and small detector pitch. For impedance matching between detector and pre~amplifier, a new circuit based on MOS diode structure is devised, which can be easily implemented using standard CMOS process. Also, tunable low pass filter with single~pole is used to suppress high frequency noise. In additions, a clamping circuit is adopted to enhance the signal~to-noise ratio of the readout output signals. The $64\times64$ IRFPA ROIC is designed using $0.65-\mu\textrm{m}$ 2P3M (double poly, tripple metal) N~Well CMOS process. The core part of the chip contains 62,000 devices including transistors, capacitors and resistors on an area of about $6.3-mm\times6.7-mm$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.3
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• pp.269-281
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• 2014

In this paper, a systematic design of a low phase noise voltage-tuned dielectric resonator oscillator(VTDRO) using loop group delay is proposed. Designed VTDRO is closed-loop type and consists of a cascade connection of a resonator, phase shifter, and amplifier. Firstly, a reference VTDRO is fabricated and its phase noise and electrical frequency tuning range are measured. Both the phase noise and electrical frequency tuning range depend on the loop group delay. Then, a required value of loop group delay for a new VTDRO with a low phase noise can be systematically computed. In addition, its phase noise and electrical frequency tuning range can be theoretically estimated using those obtained from the measurement of the reference VTDRO. When the loop group delay increases, the phase noise decreases and the electrical frequency tuning range also decreases. The former predominantly depends on the resonator structure. Therefore we propose a systematic design procedure of a resonator with high group delay characteristics. The measured loop group delay of the new VTDRO is about 700 nsec. The measured phase noise of the new VTDRO show a state-of-the-art performance of 154.5 dBc/Hz at 100 kHz frequency offset and electrical frequency tuning range of 448 kHz for a voltage change of 0~10V. The oscillation power is about 4.39 dBm.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.11
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• pp.1275-1284
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• 2010

100 MHz bandwidth and 1 Gbit/s data speed are needed in LTE-advanced for the next generation mobile communication system. Therefore, spectrum aggregation method has been studied recently to extend usable frequency bands. Also bandwidth utilization is increased since vacant frequencies are used to communicate. However, transceiver structure requires the digital RF and SDR. Therefore, frequency synthesizer and PA must operate over wide-bandwidth and RF impairments also increases in transceiver. Uplink of LTE advanced uses DFT-S OFDM using plural power amplifier. The effect of ICI increases in frequency domain of receiver due to phase noise and IQ imbalance. In this paper, we analyze influences of ICI in frequency domain of receiver considering phase noise and IQ imbalance in multiband system. Also, we separate phase noise and IQ imbalance effect from channel response in frequency domain of uplink system. And we propose a method to estimate the channel exactly and to compensate IQ imbalance and phase noise. Simulation result shows that the proposed method achieves the 2 dB performance gain of BER=$10^{-4}$.