• Tribology and Lubricants
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• v.28 no.1
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• pp.7-11
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• 2012

In this paper, the results of finite element(FE) analysis of chemical mechanical polishing(CMP) process using 2-dimensional elements were discussed. The objective of this study is to find the generation mechanism of microscratches on a wafer surface during the process. Especially, a FE model with a particle inside pad pore was considered to observe how such a contact situation could contribute to microscratch generation. The results of the finite element simulations revealed that during CMP process the pad-particle mixture could be formed and this would be a major factor leading to microscratch generation.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.34.2-34.2
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• 2011

The demand for Ru has been increasing in the electronic, chemical and semiconductor industry. Chemical mechanical planarization (CMP) is one of the fabrication processes for electrode formation and barrier layer removal. The abrasive particles can be easily contaminated on the top surface during the CMP process. This can induce adverse effects on subsequent patterning and film deposition processes. In this study, a post Ru CMP cleaning solution was formulated by using sodium periodate as an etchant and citric acid to modify the zeta potential of alumina particles and Ru surfaces. Ru film (150 nm thickness) was deposited on tetraethylorthosilicate (TEOS) films by the atomic layer deposition method. Ru wafers were cut into $2.0{\times}2.0$ cm pieces for the surface analysis and used for estimating PRE. A laser zeta potential analyzer (LEZA-600, Otsuka Electronics Co., Japan) was used to obtain the zeta potentials of alumina particles and the Ru surface. A contact angle analyzer (Phoenix 300, SEO, Korea) was used to measure the contact angle of the Ru surface. The adhesion force between an alumina particle and Ru wafer surface was measured by an atomic force microscope (AFM, XE-100, Park Systems, Korea). In a solution with citric acid, the zeta potential of the alumina surface was changed to a negative value due to the adsorption of negative citrate ions. However, the hydrous Ru oxide, which has positive surface charge, could be formed on Ru surface in citric acid solution at pH 6 and 8. At pH 6 and 8, relatively low particle removal efficiency was observed in citric acid solution due to the attractive force between the Ru surface and particles. At pH 10, the lowest adhesion force and highest cleaning efficiency were measured due to the repulsive force between the contaminated alumina particle and the Ru surface. The highest PRE was achieved in citric acid solution with NaIO4 below 0.01 M at pH 10.

• Electrical & Electronic Materials
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• v.12 no.10
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• pp.29-33
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• 1999

• Electrical & Electronic Materials
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• v.12 no.10
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• pp.34-38
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• 1999

• Electrical & Electronic Materials
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• v.12 no.10
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• pp.39-43
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• 1999

• Proceedings of the Materials Research Society of Korea Conference
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• 2000.11a
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• pp.53-53
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• 2000

• Transactions on Electrical and Electronic Materials
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• v.2 no.3
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• pp.24-27
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• 2001

The end point of oxide chemical mechanical polishing (CMP) have determined by polishing time calculated from removal rate and target thickness of oxide. This study is about control of oxide removal amounts on the shallow trench isolation (STI) patterned wafers using removal rate and thickness of blanket (non-patterned) wafers. At first, it was investigated the removal properties of PETEOS blanket wafers, and then it was compared with the removal properties and the planarization (step height) as a function of polishing time of the specific STI patterned wafers. We found that there is a relationship between the oxide removal amounts of blanket and patterned wafers. We analyzed this relationship, and the post CMP thickness of patterned wafers could be controlled by removal rate and removal target thickness of blanket wafers. As the result of correlation analysis, we confirmed that there was the strong correlation between patterned and blanket wafer (correlation factor: 0.7109). So, we could confirm the repeatability as applying for STI CMP process from the obtained linear formula. As the result of repeatability test, the differences of calculated polishing time and actual polishing time was about 3.48 seconds. If this time is converted into the thickness, then it is from 104 $\AA$ to 167 $\AA$. It is possible to be ignored because process margin is about 1800 $\AA$.

• Proceedings of the Korea Technical Association of the Pulp and Paper Industry Conference
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• 2006.06b
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• pp.337-347
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• 2006

Papers made from unbleached and bleached bagasse chemimechanical pulp were chemically modified by acetylation. The effects of irradiation on unbleached and bleached also reduced papers of bagasse chemimechanical pulp before and after acetylation were investigated in this study. Chemimechanical pulp was prepared from bagasse and then bleached with hydrogen peroxide. Unbleached and hydrogen bleached pulps were reduced by Sodium borohydride in different procedures. Paper sheets were prepared from pulps and then acetylated using a technical grade of acetic anhydride. Accelerated photo-aging was run on the samples using fluorescent lamps to verify photo-stability of paper sheets before and after pretreatments. Brightness reversion (as Post-color number) and other optical properties of the paper sheets were measured. Efficient inhibition of photo-yellowing of papers made from bagasse CMP was achieved by acetylation. The acetylated unbleached CMP was noticeably photo-bleached during irradiation. Sodium borohydride reduction followed by acetylation had the same effect as acetylation alone at the same degree of reaction time and reductive treatment did not affect the yellowing rate to any great extent. The pre-reduced, acetylated unbleached papers were, however, not brightened during irradiation. Calculation done by Kubelka-Munk equation showed that reductive treatment had little effect in reducing the photo-yellowing of paper made from CMP pulp; a small stabilization effect was observed in the case of bleached CMP, while unbleached CMP was slightly more prone to discolor in the later phase of photo-reversion. The improved stability towards light may was closely related to the decrease in the phenolic hydroxyl content as a result of blocking by acetyl groups during treatment with acetic anhydride. The results support the hypothesis that phenolic hydroxyl has an important role in the process of photo-reversion of high-yield pulps. The results obtained in this study demonstrate that the acetylation of paper manufactured from peroxide bleached Bagasse CMP significantly retards light-induced discoloration. The inhibition of yellowing is connected with a decrease in the phenolic hydroxyl content of both unbleached and peroxide bleached papers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.1
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• pp.17-21
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• 2011

Copper (Cu) had been attractive material due to its superior properties comparing to other metals such as aluminum or tungsten and considered as the best metal which can replace them as an interconnect metal in integrated circuits. CMP (Chemical Mechanical Polishing) technology enabled the production of excellent local and global planarization of microelectronic materials, which allow high resolution of photolithography process. Cu CMP is a complex removal process performed by chemical reaction and mechanical abrasion, which can make defects of its own such as a scratch, particle and dishing. The abrasive particles remain on the Cu surface, and become contaminations to make device yield and performance deteriorate. To remove the particle, buffing cleaning method used in post-CMP cleaning and buffing is the one of the most effective physical cleaning process. AE(Acoustic Emission) sensor was used to detect dynamic friction during the buffing process. When polishing is started, the sensor starts to be loaded and produces an electrical charge that is directly proportional to the applied force. Cleaning efficiency of Cu surface were measured by FE-SEM and AFM during the buffing process. The experimental result showed that particles removed with buffing process, it is possible to detect the particle removal efficiency through obtained signal by the AE sensor.

• The Journal of Advanced Prosthodontics
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• v.10 no.4
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• pp.321-327
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• 2018

PURPOSE. The purpose of this study was to compare the cutting method and the lamination method to investigate whether the CAD data of the proposed inlay shape are machined correctly. MATERIALS AND METHODS. The Mesial-Occlusal shape of the inlay was modeled by changing the stereolithography (STL). Each group used SLS (metal powder) or SLA (photocurable resin) in the additive method, and wax or zirconia in the subtractive method (n=10 per group, total n=40). Three-dimensional (3D) analysis program (Geomagic Control X inspection software; 3D systems) was used for the alignment and analysis. The root mean square (RMS) in the 2D plane state was measured within $50{\mu}m$ radius of eight comparison measuring points (CMP). Differences were analyzed using one-way analysis of variance and post-hoc Tukey's test were used (${\alpha}=.05$). RESULTS. There was a significant difference in RMS only in SLA and SLS of 2D section (P<.05). In CMP mean, CMP 4 ($-5.3{\pm}46.7{\mu}m$) had a value closest to 0, while CMP 6 ($20.1{\pm}42.4{\mu}m$) and CMP 1 ($-89.2{\pm}61.4{\mu}m$) had the greatest positive value and the greatest negative value, respectively. CONCLUSION. Since the errors obtained from the study do not exceed the clinically acceptable values, the lamination method and the cutting method can be used clinically.