• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.234-237
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• 2000

In this paper, the structural, dielectric and piezoelectric properties of the Pb[(S $b_{1}$2/N $b_{1}$2/)$_{0.035}$- $_Mn_{1}$3/N $b_{2}$3/)$_{0.065}$-(Z $r_{0.49}$, $Ti_{0.51}$)$_{0.90}$] $O_3$ ceramics were investigated with respect to the variation of the milling time. Grain size was decreased as the increase of milling time. As the milling time is increased, the particle size of the powder was decreased. Dielectric constant and electromechanical coupling factor (Qm)were slowly increased with the increase of milling time. The highest value of Qm was 1,497 at milling time 8 hour. Temperature coefficient of resonant frequency(TC $F_{r}$) was moved to positive side with the increase of milling time.e.e.e.e.e.e.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.15-18
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• 2001

The composites were fabricated 61 vol% $\beta$-SiC and $39vol%TiB_2$ powders with the liquid forming additives of 8, 12, 16wt% $Al_2O_3+Y_2O_3$ by hot pressing at $1730^{\circ}C$ and subsequent pressed annealing and pressureless annealing at $1750^{\circ}C$ for 4 hours to form YAG. The result of phase analysis of composites by XRD revealed $\alpha$-SiC(6H), $TiB_2$, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density of composites were increased with increasing $Al_2O_3+Y_2O_3$ contents. The fracture toughness showed the highest value of $7.77MPa{\cdot}m^{1/2}$ for composites added with 12wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity and the resistance temperature coefficient showed the lowest of $7.3{\times}10^{-4}{\Omega}{\cdot}cm$ and $3.8{\times}10^{-3}/^{\circ}C$, respectively, for composite added with 12wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature range of $25^{\circ}C$ to $700^{\circ}C$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.9
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• pp.516-522
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• 2000

The mechanical and electrical properties of the hot-pressed and annealed $\beta-SiC-ZrB_2$ electroconductive ceramic composites were investigated as a function of the liquid forming additives of$Al_2O_3+Y_2O_3$ Phase analysis of composites by XRD revealed $\alpha-SiC(6H) ZrB_2\; and YAG(Al_5Y_3O_{12})$ The relative density of composites were increased with increased Al2O3+Y2O3 contents. The Flexural strength showed the highest value of 390.6MPa for composites added with 20wt% Al2O3+Y2O3 additives at room temperature. Owing to crack deflection crack bridging phase transition and YAG of fracture toughness mechanism the fracture toughness showed the highest value of 6.3MPa.m1/2 for composites added with 24wt% Al2O3+Y2O3 additives at room temperature. The resistance temperature coefficient showed the value of$ 2.46\times10^{-3}\;, 2.47\times10^{-3},\; 2.52\times10^{-3}/^{\circ}C$ for composite added with 16, 20, 24wt% Al2O3+Y2O3 additives respectively. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature range of $256{\circ}C\; to\; 900^{\circ}C$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.4
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• pp.42-50
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• 2003

This paper presents an embedded RC oscillator which has temperature compensation circuits. The conventional RC oscillator has frequency deviation about 15%, which is caused by variation of resistors and the reference voltage of schmitt trigger from the temperature condition. In this paper, the proposed circuit use a CMOS bandgap reference having balanced current temperature coefficients as a triggering voltage of schmitt trigger. The constant current sources consist of current mirror circuit with the positive and negative temperature coefficient. The proposed circuit shows less 3% frequency deviation for variation of temperature, supply voltage and process parameters.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.2
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• pp.104-108
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• 1999

The electrical conductive mechanism and temperature dependence of electrical resistivity of $\alpha-SiC-ZrB_2$ composites with $ZrB_2$ contents were investigated. The electrical resistivity of hot-pressed composites was measured by the Pauw method form $25^{\circ} to 700^{\circ}C$. The electrical resistivity of the composites follow the electrical conduction model for a homogeneous mixture of two kind of particles with different conductivity. Also, the electrical resistivity versus temperature curves indicate the formation of local chains of $ZrB_2$ particles. In case of $\alpha-SiC-ZrB_2$ composites containing above 39vol.% $ZrB_2$ showed positive temperature coefficient resistance(PTCR), whereas the electrical resistivity of $\alpha-SiC-21vol.% ZrB_2$ showed negative temperature coefficient resistance(NTCR).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.314-314
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• 2010

The SiC-$ZrB_2$ composites were fabricated by combining 40vol.% of Zirconium Diboride(hereafter, $ZrB_2$) powders with Silicon Carbide(hereafter, SiC) matrix. TheSiC+40vol.%$ZrB_2$ composites were manufactured through Spark Plasma Sintering(hereafter, SPS) under argon atmosphere, uniaxial pressure of 50MPa, heating rate of $100^{\circ}C$/min, sintering temperature of $1,500^{\circ}C$ and holding time of 5min. But one on/off pulse sequence(one pulse time: 2.78ms) is 10:9(hereafter, SZ10), and the other is 48:8(hereafter, SZ48). The physical and mechanical properties of the SZ12 and SZ48 were examined. Reactions between $\beta$-SiC and $ZrB_2$ were not observed via X-Ray Diffraction(hereafter, XRD) analysis. The apparent porosity of the SZ10 and SZ48 composites were 9.7455 and 12.2766%, respectively. The SZ10 composite, 593.87MPa, had higher flexural strength than the SZ48 composite, 324.78MPa, at room temperature. The electrical properties of the SiC-$ZrB_2$ composites had Positive Temperature Coefficient Resistance(hereafter, PTCR).

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.11
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• pp.2083-2087
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• 2011

The SiC-$ZrB_2$ composites were produced by subjecting a 40:60 vol.% mixture of zirconium diboride($ZrB_2$) powder and ${\beta}$-silicon carbide (SiC) matrix to spark plasma sintering(SPS). Sintering was carried out for 60sec at $1400^{\circ}C$ (designation as TP145 and TP146), $1500^{\circ}C$(designation as TP155 and TP156) and uniaxial pressure 50MPa, 60MP under argon atmosphere. The physical, electrical, and mechanical properties of the SiC-$ZrB_2$ composites were examined. The relative density of TP145, TP146, TP155 and TP156 were 94.75%, 94.13%, 97.88% and 95.80%, respectively. Reactions between ${\beeta}$-SiC and $ZrB_2$ were not observed via x-ray diffraction (hereafter, XRD) analysis. The flexural strength, 306.23MPa of TP156 was higher than that, 279.42MPa of TP146 at room temperature, but lower than that, 392.30MPa of TP155. The properties of a SiC-$ZrB_2$ composites through SPS under argon atmosphere were positive temperature coefficient resistance (hereafter, PTCR) in the range from $25^{\circ}C$ to $500^{\circ}C$. The electrical resistivities of TP145, TP146, TP155 and TP156 were $6.75{\times}10^{-4}$, $7.22{\times}10^{-4}$, $6.17{\times}10^{-4}$ and $6.71{\times}10^{-4}{\Omega}{\cdot}cm$ at $25^{\circ}C$, respectively. The densification of a SiC-$ZrB_2$ composite through hot pressing depend on the sintering temperature and pressure. However, it is convinced that the densification of a SiC-$ZrB_2$ composite do not depend on sintering pressure under SPS.

• Proceedings of the IEEK Conference
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• 2002.07a
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• pp.74-77
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• 2002

In this paper we present a novel temperature compensated Hall effect power IC for accurate operation of wide temperature and high current drive of the motor coil. In order to compensate the temperature dependence of Hall sensitivity with negative temperature coefficient(TC), the differential amplifier has the gain consisted of epi-layer resistor with positive TC. The material of Hall device and epi-resistor is epi-layer with the same mobility. The variation of Hall sensitivity is -38% at 150$^{\circ}C$ and 88% at - 40$^{\circ}C$. But the operating point(B$\sub$op/) and release point(B$\sub$RP/) of the Hall power IC are within ${\pm}$25%. The experimental results show very stable and accurate performance over wide temperature range of -40$^{\circ}C$ to 125$^{\circ}C$.

• Journal of the Korean Society of Industry Convergence
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• v.1 no.1
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• pp.21-30
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• 1998

The purpose of this study is to clarify the floor temperature on the human body and to estimate thermal comfort zone in a heated room. In order to evaluate the effects of floor heating, a series of experiments were carried out using Korean subjects. The following experiments were conducted: 1) to obtain the effective radiation area and configuration factors of the person in the sitting posture on a floor to get the mean radiant temperature, 2) to measure contacted area of the person to the floor to calculate conduction heat rate, 3) to measure convective heat transfer coefficient of the body and 4) to know the thermal comfort zone of indoor environment heated by ON-DOL. Subjects were exposed to the following conditions: combinations of air temperature $20^{\circ}C$, $22.5^{\circ}C$, $25^{\circ}C$, and floor temperature $20^{\circ}C$, $22.5^{\circ}C$, $25^{\circ}C$, $27.5^{\circ}C$, $30^{\circ}C$, $32.5^{\circ}C$, $35^{\circ}C$, $37.5^{\circ}C$, $40^{\circ}C$ under still air and 50% relative humidity in the controllable artificial climate chamber. To evaluate the effect of heat conduction between the body and a floor modified mean skin temperature was defined. Weighting coefficient to calculate mean skin temperature were modified with the contacted area. The experiments revealed a positive correlation between the modified operative temperature and the modified mean skin temperature. The modified mean skin temperature can indicate the effect of heat conduction between body and a floor surface.

• Composites Research
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• v.16 no.1
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• pp.19-25
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• 2003

In this paper, electrical properties of nanostructured carbon blacks (CB)-filled high density polyethylene (HDPE) composites were investigated as a function of temperature, which were prepared by the conventional melt-mixing method. The composites were irradiated with electron beam in a dosage of 30∼150 kGy to enhance an electronical reproducibility and to reduce a negative temperature coefficient (NTC) phenomenon. And, gel contents (%) of irradiated CB/HDPE composites were estimated by solvent extraction method. From the experimental results. the positive temperature coefficient (PTC) intensity of the composites was strongly depended on the CB content and particle size. And, the increase of gel contents (%) and disappearance of NTC behavior of the composites were identified at a dosage of 60 kGy. It was also found that the electron beam irradiation made an improvement of electrical reproducibility of the composites. This result was probably due to the reduction of the freedom of CB movement at above the melting temperature of the polymer crystalline, resulting in increasing the crosslinking structure of the composites.