• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.349-350
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• 2012

Porous silicon (PS) was prepared by electrochemical anodization. Ultra-thin zinc oxide (ZnO) capping layers were deposited on the PS by plasma-assisted molecular beam epitaxy (PA-MBE). The effects of the ZnO capping layers on the properties of the as-prepared PS were investigated using scanning electron microscopy (SEM) and photoluminescence (PL). The as-prepared PS has circular pores over the entire surface. Its structure is similar to a sponge where the quantum confinement effect (QCE) plays a fundamental role. It was found that the dominant red emission of the porous silicon was tuned to white light emission by simple deposition of the ultra-thin ZnO capping layers. Specifically, the intensity of white light emission was observed to be enhanced by increasing the growth time from 1 to 3 min.

• Korean Journal of Materials Research
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• v.34 no.7
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• pp.370-376
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• 2024

In this study, we report significant improvements in lithium-ion battery anodes cost and performance, by fabricating nano porous silicon (Si) particles from Si wafer sludge using the metal-assisted chemical etching (MACE) process. To solve the problem of volume expansion of Si during alloying/de-alloying with lithium ions, a layer was formed through nitric acid treatment, and Ag particles were removed at the same time. This layer acts as a core-shell structure that suppresses Si volume expansion. Additionally, the specific surface area of Si increased by controlling the etching time, which corresponds to the volume expansion of Si, showing a synergistic effect with the core-shell. This development not only contributes to the development of high-capacity anode materials, but also highlights the possibility of reducing manufacturing costs by utilizing waste Si wafer sludge. In addition, this method enhances the capacity retention rate of lithium-ion batteries by up to 38 %, marking a significant step forward in performance improvements.

• Journal of Integrative Natural Science
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• v.5 no.4
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• pp.253-256
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• 2012

The rugate porous silicons containing multiple photonic band gaps have been generated by applying a composite waveform summed three computer-generated pseudo-sinusoidal current waveforms and exhibit three sharp photonic band gaps in the optical reflectivity spectrum. Generated multiple rugate porous silicons display three rugate peaks corresponding to the each of the sine components varied from 0.42, 0.36, and 0.30 Hz, with a spacing of 0.06 Hz between each sine component. The resulting rugate PSi films have been removed from the silicon substrate by applying an lift-off current and are then made into particles by ultrasono-method in a organic solution. The sensing experiments using these particles for organic solvents such as toluene, hexane, acetone, and methanol have been achieved. Condensing of organic vapors in the pores increases the refractive indices of entire particle which results a red shift in the photonic peaks.

• Journal of the Korean Ceramic Society
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• v.45 no.11
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• pp.675-680
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• 2008

The effect of pore former content on both porosity and pore structure was investigated for porous sintered reaction-bonded silicon nitrides (SRBSNs). A spherical PMMA with $d_{50}=8{\mu}m$ was employed as a pore-former. Its amount ranged from 0 to 30 part. Porous SRBSNs were fabricated by post-sintering at various temperatures where the porosity was controlled at $12{\sim}52%$. The strong tendency of increasing porosity with PMMA content and decreasing porosity with sintering temperature was observed. Measured pore-channel diameter increased $(0.3{\rightarrow}1.1{\mu}m)$ with both PMMA content and sintering temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.221-222
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• 2008

In Crystalline Si solar cells, Anti-Reflection Coating is contribute to improvement in energy conversion efficiency due to decrease of optical loss and recombination owing to surface passivation. Porous Si is formed electrochemical etching that uses chemical solution and anodization etching. So It gives that advantage in rapid process time and without high cost equipment. In this paper, We compare Porous Si with $SiO_2$/SiNx ARC and analyze that by anti-reflection coating.

• Journal of the Korean Ceramic Society
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• v.32 no.5
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• pp.608-616
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• 1995

Porous silicon (PS) was prepared under different anodization conditions and the photoluminescence (PL) was measrued. In addition PL of the naturally and thermally oxidized PS was measured. It was found that the PL peak was shifted to shorter wavelength as the anodization current density and the extent of the oxidation increased. The absence of correlation between the PL behavior and the surface hydrogen species (Si-H2, Si-H) implies that the mechanism of PL of PS is not likely related to the surface hydrogen species effect but to the quantum confinement effect.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.608-609
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• 2006

The deformation behavior under three-point bend test was found to depend on the loading uniformity and the macrostructure for SiC reticulated porous ceramics (RPCs). However, this dependence of loading uniformity is alleviated by improved macrostructure with fewer flaws and clogged pores. Even, this dependence becomes less important as the struts become thicker and stronger. The bend result of RPCs with highly uniform macrostructure is in excellent agreement with the GA (Gibson and Ashby) model, but the one with un-uniform macrostructure deviates from the GA model, suggesting that the macrostructure plays an important role in deformation behavior of RPCs under bend.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.36 no.10
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• pp.1019-1023
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• 2012

In this research, a novel direct-aluminum-heating-induced crystallization method was developed for the purpose of application to solar cells. By applying a constant current of 3 A to an aluminum thin film, a 200-nm-thick amorphous silicon (a-Si) thin film with a size of $1cm{\times}1cm$ can be crystallized into a polycrystalline silicon (poly-Si) thin film within a few tens of seconds. The Raman spectrum analysis shows a peak of 520 $cm^{-1}$, which verifies the presence of poly-Si. After removing the aluminum layer, the poly-Si thin film was found to be porous. SIMS analysis showed that the porous poly-Si thin film was heavily p-doped with a doping concentration of $10^{21}cm^{-3}$. Thermal imaging shows that the crystallization from a-Si to poly-Si occurred at a temperature of around 820 K.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.116-117
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• 2006

We investigated selective emitter effect of Porous Silicon (PSI) as antireflection coatings (ARC). The thin PSi layer, less than 100nm, was electrochemically formed by electrochemical method in about $3{\mu}m$ thick $n^+$ emitter on single crystalline silicon wafer (sc-Si). The appropriate PSi formations for selective emitter effect were carried out a two steps. A first set of samples allowed to be etched after metal-contact processing and a second one to evaporate Ag front-side metallization on PSi layer, by evaluating the I-V features The PSi has reflectance less than 20% in wavelength for 450-1000nm and porosity is about 60%. The cell made after front-contact has improved cell efficiency of about in comparison with the one made after PSi. The observed increase of efficiency for samples with PSi coating could be explained not only by the reduction of the reflection loss and surface recombination but also by the increased short-circuit current (Isc) within selective emitter. The assumption was confirmed by numerical modeling. The obtained results point out that it would be possible to prepare a solar cell over 15% efficiency by the proposed simple technology.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.155-156
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• 2007

본 연구에서는 태양전지 표면에 입사된 빛의 반사율을 최소화하기 위해서 단결정 실리콘 기판 표면에 다공성 실리콘층을 적용하여 반사방지막(Anti-Reflection Coating, ARC)을 형성하는 실험을 하였다. 다공성 실리콘(Porous silicon, PSi)은 실온에서, 기판 성질에 따라 일정 비율로 만든 전해질 용액($HF-C_2H_5OH-H_2O$)을 사용하여 실리콘 표면에 양극산화처리 함으로써 단순 공정만으로 실리콘 기판의 반사율을 낮출 수 있다. 본 연구는 일정한 면저항을 가지는 단결정 실리콘 기판에 다공성 실리콘층을 여러 조건으로 형성하여 반사방지막으로써의 특성을 비교 분석하였다.