• Title/Summary/Keyword: porous aluminium oxide

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Effect of the Formation of an Initial Oxide Layer on the Fabrication of the Porous Aluminium Oxide (초기 산화 피막의 형성이 다공성 알루미나 막 제작에 미치는 영향)

  • Park, Young-Ok;Kim, Chul-Sung;Kouh, Tae-Joon
    • Journal of the Korean Magnetics Society
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    • v.18 no.2
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    • pp.79-83
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    • 2008
  • We have investigated the effect of the formation of an initial oxide layer on the fabrication of the porous aluminium oxide. The porous aluminium oxide was fabricated by two-step anodization process with a electropolished aluminium foil. Before the first anodization step, the initial oxide layer with thickness of 10 nm was formed under the applied voltage of 1 V and later the anodization was continued under 40 V using oxalic acid solution. With the formation of the initial oxide layer, the anodization process was stable and the anodization current was constant throughout the process. In case of the absence of the initial oxide layer, the anodization was very unstable and the continuous increase in the anodization current was observed. This indicates the formation of the initial oxide layer on the aluminium surface prevents the burning of the surface due to the nonuniform distribution of the applied electric field, and allows the stable anodization process required for the porous aluminium oxide.

Impedance Characteristics of Oxide Layers on Aluminium

  • 오한준;장경욱;치충수
    • Bulletin of the Korean Chemical Society
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    • v.20 no.11
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    • pp.1340-1344
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    • 1999
  • The electrochemical behavior of oxide layers on aluminium was studied using electrochemical impedance spectroscopy. Impedance spectra were taken at a compact and a porous oxide layer of Al. The anodic films on Al have a variable stoichiometry with gradual reduction of oxygen deficiency towards the oxide-electrolyte interface. Thus, the interpretation of impedance spectra for oxide layers is complicated, with the impedance of surface layers differing from those of ideal capacitors. This layer behavior with conductance gradients was caused by an inhomogeneous dielectric. The frequency response cannot be described by a single RC element. The oxide layers of Al are properly described by the Young model of dielectric constant with a vertical decay of conductivity.

Improvement of Corrosion Resistance of Aluminum Alloy with Wettability Controlled Porous Oxide films

  • Sakairi, M.;Goyal, V.
    • Corrosion Science and Technology
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    • v.15 no.4
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    • pp.166-170
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    • 2016
  • The combined process of porous type anodizing and desiccation treatment was applied to improve wettability of A1050 aluminum alloy. The water contact angles of anodized samples were increaseds considerably with desiccation treatment. However, there was no considerable effect of polishing and anodizing time on water contact angle. The corrosion behavior with the treatments was investigated electrochemically. The corrosion resistance of the samples in 3.5 mass% NaCl solutions increased with higher contact angle. Anodized and desiccated samples showed better corrosion resistance than un-desiccated samples around rest potential region.

Aluminum Oxide Photonic Crystals Fabricated on Compound Semiconductor (화합물 반도체 기판 위에 제작된 산화 알루미늄 광결정 특성)

  • Choi, Jae-Ho;Kim, Keun-Joo;Jung, Mi;Woo, Duk-Ha
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.77-78
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    • 2006
  • We fabricated photonic crystals on GaAs and GaN substrates. After anodizing the aluminium thin film in electrochemical embient, the porous alumina was implemented to the mask for reactive ion beam etching process of GaAs wafer. And photonic crystals in GaN wafer were also fabricated using electron beam nano-lithography process. The coated PMMA thin film with 200 nm-thickness on GaN surface was patterned with triangular lattice and etched out the GaN surface by the inductively coupled plasma source. The fabricated GaAs and GaN photonic crystals provide the enhanced intensities of light emission for the wavelengths of 858 and 450 nm, respectively. We will present the detailed dimensions of photonic crystals from SEM and AFM measurements.

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Plasma Electrolytic Oxidation in Surface Modification of Metals for Electronics

  • Sharma, Mukesh Kumar;Jang, Youngjoo;Kim, Jongmin;Kim, Hyungtae;Jung, Jae Pil
    • Journal of Welding and Joining
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    • v.32 no.3
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    • pp.27-33
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    • 2014
  • This paper presents a brief summary on a relatively new plasma aided electrolytic surface treatment process for light metals. A brief discussion regarding the advantages, principle, process parameters and applications of this process is discussed. The process owes its origin to Sluginov who discovered an arc discharge phenomenon in electrolysis in 1880. A similar process was studied and developed by Markov and coworkers in 1970s who successfully deposited an oxide film on aluminium. Several investigation thereafter lead to the establishment of suitable process parameters for deposition of a crystalline oxide film of more than $100{\mu}m$ thickness on the surface of light metals such as aluminium, titanium and magnesium. This process nowadays goes by several names such as plasma electrolytic oxidation (PEO), micro-arc oxidation (MOA), anodic spark deposition (ASD) etc. Several startups and surface treatment companies have taken up the process and deployed it successfully in a range of products, from military grade rifles to common off road sprockets. However, there are certain limitations to this technology such as the formation of an outer porous oxide layer, especially in case of magnesium which displays a Piling Bedworth ratio of less than one and thus an inherent non protective oxide. This can be treated further but adds to the cost of the process. Overall, it can be said the PEO process offers a better solution than the conventional coating processes. It offers advantages considering the fact that he electrolyte used in PEO process is environmental friendly and the temperature control is not as strict as in case of other surface treatment processes.

Synthesis and Characterization of Nickel Nanowires by an Anodic Aluminum Oxide Template-Based Electrodeposition (양극산화 알루미나 주형 기반의 전해 증착법을 이용한 니켈 나노선의 합성 및 특성 연구)

  • Lim, Hyo-Ryoung;Choa, Yong-Ho;Lee, Young-In
    • Journal of Powder Materials
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    • v.22 no.3
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    • pp.216-220
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    • 2015
  • Vertically oriented nickel nanowire arrays with a different diameter and length are synthesized in porous anodic aluminium oxide templates by an electrodeposition method. The pore diameters of the templates are adjusted by controlling the anodization conditions and then they are utilized as templates to grow nickel nanowire arrays. The nickel nanowires have the average diameters of approximately 25 and 260 nm and the crystal structure, morphology and microstructure of the nanowires are systematically investigated using XRD, FE-SEM and TEM analysis. The nickel nanowire arrays show a magnetic anisotropy with the easy axis parallel to the nanowires and the coercivity and remanence enhance with decreasing a wire diameter and increasing a wire length.

Synthesis and Characterization of Cu Nanowires Using Anodic Alumina Template Based Electrochemical Deposition Method (양극산화 알루미나 주형 기반의 전해 증착법을 이용한 구리 나노선의 합성 및 특성 연구)

  • Lee, Young-In;Choa, Yong-Ho
    • Journal of Powder Materials
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    • v.19 no.5
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    • pp.367-372
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    • 2012
  • Single crystalline Cu nanowires with controlled diameters and aspect ratios have been synthesized using electrochemical deposition within confined nanochannels of a porous anodic aluminium oxide(AAO) template. The diameters of nano-sized cylindrical pores in AAO template were adjusted by controlling the anodization conditions. Cu nanowires with diameters of approximately 38, 99, 274 nm were synthesized by the electrodeposition using the AAO templates. The crystal structure, morphology and microstructure of the Cu nanowires were systematically investigated using XRD, FE-SEM, TEM and SAED. Investigation results revealed that the Cu nanowires had the controlled diameter, high aspect ratio and single crystalline nature.

Anodic Oxide Membrane Formation of Hexagonal Pore Arrarys on Aluminium (다공성 알루미나 박막의 나노 스케일 구조 제어)

  • Jung, Kyung-Han;Shin, Hoon-Kyu;Kwon, Young-Soo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.830-833
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    • 2002
  • 최근 나노 구조 (nano structure)를 만들기 위한 시도 중 하나로서 스스로 조직화(self organization)하여 나노 구조를 형성하는 물질을 나노 소자 제작을 위한 형틀 (template)로 이용하려는 시도가 활발히 진행되고 있다. 이러한 물질로서 주목을 받고있는 것 중 하나가 전해질 용액에서 알루미늄을 양극산화(anodization) 시켰을 때 형성되는 다공성 알루미나 박막이다. 본 연구에서는 고 순도 알루미늄을 기계적으로 연마(mechanical polishing)하고 공기 분위기에서 어닐링 (annealing)하여 알루미늄을 재결정화(recrystallization) 시키고 인가 전압이 40 V인 정 전압하에서 0.3 M의 수산(oxalic acid)을 전해질로 사용하면서 양극산화를 수행하여 평균 직경이 65 nm인 고도로 배열된 육방밀집구조의 나노 다공성 박막을 제작하였다. 또한 같은 방향의 육방밀집 배열은 크기가 수 ${\mu}m$인 영역(grain)을 형성하고 있었으며, 평균적인 pore의 밀도는 $1.1{\times}10^{10}/cm^2$였다.

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Optical Properties of Spherical YAG:Ce3+ Phosphor Powders Synthesized by Atmospheric Plasma Spraying Method Appling PVA Solution Route and Domestic Aluminium Oxide Seed (PVA 용액법과 국산 산화알루미늄을 적용하여 대기 플라즈마 용사법으로 합성된 구형의 YAG:Ce3+ 형광체의 발광특성)

  • Yong-Hyeon Kim;Sang-Jin Lee
    • Journal of Powder Materials
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    • v.30 no.5
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    • pp.424-430
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    • 2023
  • YAG phosphor powders were fabricated by the atmospheric plasma spraying method with the spray-dried spherical YAG precursor. The YAG precursor slurry for the spray drying process was prepared by the PVA solution chemical processing utilizing a domestic easy-sintered aluminum oxide (Al2O3) powder as a seed. The homogenous and viscous slurry resulted in dense granules, not hollow or porous particles. The synthesized phosphor powders demonstrated a stable YAG phase, and excellent fluorescence properties of approximately 115% compared with commercial YAG:Ce3+ powder. The microstructure of the phosphor powder had a perfect spherical shape and an average particle size of approx imately 30 ㎛. As a result of the PKG test of the YAG phosphor powder, the synthesized phosphor powders exhibited an outstanding luminous intensity, and a peak wavelength was observed at 531 nm.