• 제목/요약/키워드: polymer light-emitting diode (PLED)

검색결과 29건 처리시간 0.023초

Polymer Light Emitting Diode(PLED)의 특성에 관한 연구 (A study on the Characteristics of the Polymer Light Emitting Diode)

  • 문형돈;김화영;권영호;김영호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.1082-1085
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    • 2003
  • 본 연구에서는 고분자를 사용하여 만든 유기EL소자인 PLED (Polymer Light Emitting Diode)의 제조공정 변화에 따른 소자성능을 연구하였다. PLED의 제작은 크게 ITO 기판 제작, 발광층 및 전극 증착 등의 공정으로 나누어진다. ITO 기판은 사진식각공정으로, 발광층의 증착은 스핀코팅법으로, 전극은 진공증착법으로 각각 제작하였다. 코팅 시 스핀속도 및 점도 조절을 통하여 발광층의 두께를 조절하였고, 스핀코팅 후 건조방법에 따라서 표면의 uniformity와 발광특성을 비교해 보았다. 실험결과 특정 두께에서 발광특성이 우수하게 나타나는 것을 확인할 수 있었다. 그리고 건조방법에 따라 발광층의 표면 uniformity에 차이가 있었으며, 표면 uniformity에 따라 diode의 I-V 특성 경향이 달리 나타났다.

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Study of White Polymer Electrophosphorescent Light-emitting Diode with Heteroleptic Ir-Complex

  • Lee, Jay-Woo;Kim, Eu-Gene
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.648-650
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    • 2007
  • We demonstrate highly efficient White Polymer Electrophosphorescent Light-emitting Diode using newly developed green and red light emitting heteroleptic iridium complex, Ir-(pq)2tpy, and blue light emitting fluorescent dopant, BczVBi. The best luminous efficiency reached 28cd/A with maximum luminance of 87000cd/m2. The scheme for determining optimum device architecture and dopant concentrations were constructed.

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ITO/PEDOT:PSS/MEH-PPV/Al 구조의 고분자 유기발광다이오드의 특성 연구 (The Properties of Polymer Light Emitting Diodes with ITO/PEDOT:PSS/MEH-PPV/Al Structure)

  • 공수철;장호정
    • 마이크로전자및패키징학회지
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    • 제12권3호
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    • pp.213-217
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    • 2005
  • ITO(indium tin oxide)/Glass 기판위에 정공 수송층으로 PEDOT:PSS[poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)]과 발광층으로 MEH-PPV[poly(2-methoxy-5-(2-ethyhexoxy)-1,4phenylenvinylene)]의 고분자를 사용하여 ITO/PEDOT:PSS/MEH-PPV/Al 구조를 갖는 고분자 유기 발광다이오드 (polymer light emitting diode: PLED)를 제작하였다. 고분자 유기 발광다이오드 제작시 MEH-PPV의 농도$(0.1\;wt\%\~0.9\;wt\%)$가 발광층 표면 거칠기와 박막층판의 마찰계수(friction coefficient)에 미치는 영향을 조사하였다. MEH-PPV의 농도를 $0.1\;wt\%$에서 $0.9\;wt\%$로 증가함에 따라 발광층의 RMS 값은 1.72 nm 에서 1.00 nm로 감소하여 거칠기가 개선되는 경향을 보여 주었다. 또한 발광층 박막의 마찰계수는 0.048에서 0.035로 감소하여 박막의 접합상태가 나빠지는 현상을 나타내었다. $0.5\;wt\%$의 농도를 갖는 PLED 다이오드에서 최대 휘도인 $409\;cd/m^2$ 값을 얻었다.

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Study of White Polymer Light Emitting Diode with Blending Method

  • Shin, Byong-Wook;Lee, Sung-Youp;Lee, Eui-Wan;Lee, Hyeong-Rag
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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    • pp.1461-1463
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    • 2007
  • In this study, we report the luminescent properties of white polymer light emitting diode (WPLED) fabricated by soluble methods with poly-fluorenebased polymers blends which emit blue and yellow light. A device structure of ITO/PEDOT:PSS/Emissive Layer (EML)/Al was employed.

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TPBI 전자 수송층을 이용한 청색 고분자 유기발광다이오드의 전기·광학적 특성 향상 (Improving the Electrical and Optical Properties of Blue Polymer Light Emitting Diodes by Introducing TPBI Electron Transport Layer)

  • 공수철;전창덕;유재혁;장호정
    • 한국재료학회지
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    • 제20권6호
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    • pp.294-300
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    • 2010
  • In this study, we fabricated a polymer light emitting diode (PLED) and investigated its electrical and optical characteristics in order to examine the effects of the PFO [poly(9,9-dioctylfluorene-2-7-diyl) end capped with N,N-bis(4-methylphenyl)-4-aniline] concentrations in the emission layer (EML). The PFO polymer was dissolved in toluene ranging from 0.2 to 1.2 wt%, and then spin-coated. To verify the influence of the TPBI [2,2',2"-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole)]electron transport layer, TPBI small molecules were deposited by thermal evaporation. The current density, luminance, wavelength and current efficiency characteristics of the prepared PLED devices with and without TPBI layer at various PFO concentrations were measured and compared. The luminance and current efficiency of the PLED devices without TPBI layer were increased, from 117 to $553\;cd/m^2$ and from 0.015 to 0.110 cd/A, as the PFO concentration increased from 0.2 to 1.0 wt%. For the PLED devices with TPBI layer, the luminance and current efficiency were $1724\;cd/m^2$ and 0.501 cd/A at 1.0 wt% PFO concentration. The CIE color coordinators of the PLED device with TPBI layer at 1.0 wt% PFO concentration showed a more pure blue color compared with the one without TPBI, and the CIE values varied from (x, y) = (0.21, 0.23) to (x, y) = (0.16, 0.11).

Synthesis of Conjugated Polymers with Fluorene and Biphenylamine and Application to PLED Devices

  • Park, Eun-Jung;Kwon, Hyeok-Yong;Park, Lee-Soon
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.458-460
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    • 2008
  • Four kinds of copolymers with fluorene and biphenylamine units were synthesized by palladium-catalyzed polycondensation reaction. These polymers were characterized in terms of their UV/Visible and photoluminescence (PL) properties in solution and film state. These polymers were also studied as a hole transporting material in the polymer light emitting diode (PLED) devices.

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The Analysis of the Characteristics according to Polymer Concentration for Polymer Light Emitting Diode Fabricated on Flexible Substrates

  • Cho, Woo-Jin;Kim, Su-Hwan;Kang, Byoung-Ho;Kim, Do-Eok;Kang, Shin-Won
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.752-755
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    • 2007
  • In this paper, to compare thermal and chemical stabilities of poly-ethylene-terephtalate (PET) and polyether- surphone (PES), we fabricated Polymer Light Emitting Diode (PLED) on each substrate and analyzed these characteristics. Moreover, we analyzed the characteristics of the device deposited LiF (1 nm) before cathode deposition.

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Low Temperature Annealing Effect of PFO-Poss Emission Layer on the Properties of Polymer Light Emitting Diodes

  • Gong, Su-Cheol;Chang, Ho-Jung
    • 한국재료학회지
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    • 제19권6호
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    • pp.313-318
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    • 2009
  • Polymer Light Emitting Diodes (PLEDs) with an ITO/PEDOT:PSS/PVK/PFO-poss/LiF/Al structure were prepared on plasma-treated ITO/glass substrates using spin-coating and thermal evaporation methods. The annealing effects of the PFO-poss film when it acts as the emission layer were investigated by using electrical and optical property measurements. The annealing conditions of the PFO-poss emission film were 100 and $200^{\circ}C$ for 1, 2 and 3 hours, respectively. The luminance increased and the turn-on voltage decreased when the annealing temperature and treatment time increased. After examining the Luminance-Voltage (L-V) properties of the PLED, the maximum luminance was found to be 1497 cd/$m^2$ at 11 V for the device when it was annealed at $200^{\circ}C$ for 3 hours. The peak intensity of the PLED emission spectra at approximately 525 nm in wavelength increased when the annealing temperature and time of the PFO-poss film increased. These results suggest that the light emission color shifted from blue to green.

나노접촉 인쇄공정을 이용한 폴리머 유기정보표시소자 설계 및 구현 (Design and Implementation of Polymer-Light Emitting Diodes by using Nanocantact Printing)

  • 조정대;김광영;이응숙;최병오
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2005년도 춘계학술대회 논문집
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    • pp.1511-1513
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    • 2005
  • The polymer-light emtting diodes(PLEDs) were comprised a design of OLED array, process develop by using ITO thin glass, and fabrication of PDMS stamp by using nanocontact printing. In the study, we describe a different approach for building OLEDs, which is based on physical lamination of thin metal electrodes supported by a PDMS stamp layer against an electroluminescent organic. We develop that devices fabricated in this manner have better performance than those constructed with standard processing techniques. The lamination approach avoids forms of disruption that can be introduced at the electrode organic interface by metal evaporation and has a reduced sensitivity to pinhole or partial pinhole defects. Also, it is easy to build patterned PLED with feature sizes into the nanometer regime. This method provides a new route to PLED for applications ranging from high performance displays to storage and lithography systems, and PLED can used for organic electronics and flexible display.

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