• Title/Summary/Keyword: polymer etching

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Removal of Anodic Aluminum Oxide Barrier Layer on Silicon Substrate by Using Cl2 BCl3 Neutral Beam Etching

  • Kim, Chan-Gyu;Yeon, Je-Gwan;Min, Gyeong-Seok;O, Jong-Sik;Yeom, Geun-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.480-480
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    • 2011
  • 양극산화(anodization)는 금속을 전기화학적으로 산화시켜 금속산화물로 만드는 기술로서 최근 다양한 크기의 나노 구조를 제조하는 기술로 각광받고 있으며, 이러한 기술에 의하여 얻어지는 anodic aluminum oxide(AAO)는 magnetic data storage, optoelectronic device, sensor에 적용될 수 있는 nano device 뿐만 아니라 nanostructure를 제조하기 위한 template 및 mask로써 최근 광범위 하게 연구되고 있다. 또한, AAO는 Al2O3의 단단한 구조를 가진 무기재료이므로 solid mask로써 다른 porous materials 보다 뛰어난 특성을 갖고 있다. 또한 electron-beam lithography 및 block co-polymer 에 의한 patterning 과 비교하여 매우 경제적이며, 재현성이 우수할 뿐만 아니라 대면적에서 나노 구조의 크기 및 형상제어가 비교적 쉽기 때문에 널리 사용되고 있다. 그러나, AAO 형성 시 생기게 되는 반구형 모양의 barrier layer는 물질(substance)과 기판과의 direct physical and electrical contact을 방해하기 때문에 해결해야 할 가장 큰 문제점 중 하나로 알려져 있다. 따라서 본 연구에서는 실리콘 기판위의 형성된 AAO의 barrier layer를 Cl/BCl3 gas mixture에서 Neutral Beam Etching (NBE)과 Ion Beam Etching (IBE) 로 각각 식각한 후 그 결과와 비교하였다. NBE와 IBE 모두 Cl2/BCl3 gas mixture에서 BCl3 gas의 첨가량이 60% 일 경우 etch rate이 가장 높게 나타났고, optical emission spectroscopy (OES)로 Cl2/BCl3 플라즈마 내의 Cl radical density와 X-ray photoelectron spectroscopy (XPS)로 AAO 표면 위를 관찰한 결과 휘발성 BOxCly의 형성이 AAO 식각에 크게 관여함을 확인 할 수 있었다. 또한, NBE와 IBE 실험한 다양한 Cl2/BCl3 gas mixture ratio 에서 AAO가 식각이 되지만, 이온빔의 경우 나노사이즈의 AAO pore의 charging에 의해 pore 아래쪽의 위치한 barrier layer를 어떤 식각조건에서도 제거하지 못하였다. 하지만, NBE에서는 BCl3-rich Cl2/BCl3 gas mixture인 식각조건에서 AAO pore에 휘발성 BOxCly를 형성하면서 barrier layer를 제거할 수 있었다.

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Enhanced Adhesion of Tire Cords via Plasma Polymerizations (플라즈마 중합에 의한 타이어 코드의 접착성 향상연구)

  • Kim, R.K.;Sohn, B.Y.;Han, M.H.;Kang, H.M.;Yoon, T.H.
    • Elastomers and Composites
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    • v.34 no.2
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    • pp.128-134
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    • 1999
  • Steel tire cords were coated via RF plasma polymerization of acetylene and butadiene gas in order to enhance adhesion to rubber compounds. Adhesion of tire cords was measured by TCAT and T-test as a function of type of gas, plasma powder, treatment time, gas pressure and Ar gas etching. Some samples were subjected to aging study in distilled water at $80^{\circ}C$ for a period of 7 days. After testing, tire cords were analysed by SEM to elucidate the adhesion mechanism. The highest adhesion values were obtained at 20W, 2min and 25mtorr for acetylene plasma polymerization, and l0W, 4min, 25mtorr for butadiene plasma polymerization. However, Ar plasma etching did not affect adhesion, while the adhesion of tire cords increased rather than decreased, contrary to expectations. It was not possible to elucidate failure mode by SEM, owing to the rough surface of the tire and the thin plasma polymer coating layer.

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Fabrication of Superhydrophobic Micro-Nano Hybrid Structures by Reactive Ion Etching with Au Nanoparticle Masks (나노입자 마스크를 이용하여 제작한 초소수성 마이크로-나노 혼성구조)

  • Lee, C.Y.;Yoon, S.B.;Jang, G.E.;Yun, W.S.
    • Journal of the Korean Vacuum Society
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    • v.19 no.4
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    • pp.300-306
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    • 2010
  • Superhydrophobic micro-nano hybrid structures were fabricated by reactive ion etching of hydrophobic polymer micro patterns using gold nanoparticles as etch masks. Micro structures of perfluoropolyether bisurethane methacrylate (PFPE) were prepared by soft-lithographic technique using polydimethylsiloxane (PDMS) molds. Water contact angles on the surfaces of various PFPE micro structures and corresponding micro-nano hybrid structures were compared to examine the effects of micro patterning and nanostructure formation in the manifestation of superhydrophobicity. The PFPE micro-nano hybrid structures exhibited a very stable superhydrophobicity, while the micro-only structures could not reach the superhydrophobicity but only showed the unstable hydrophobicity.

Etch resist patterning of printed circuit board by ink jet printing technology (잉크젯 인쇄기술을 이용한 인쇄회로기판의 에칭 레지스터 패터닝)

  • Seo, Shang-Hoon;Lee, Ro-Woon;Kim, Yong-Sik;Kim, Tae-Gu;Park, Sung-Jun;Yun, Kwan-Soo;Park, Jae-Chan;Jeong, Kyoung-Jin;Joung, Jae-Woo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.108-108
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    • 2007
  • Inkjet printing is a non-contact and direct writing associated with a computer. In the industrial field, there have been many efforts to utilize the inkjet printing as a new way of manufacturing, especially for electronic devices. The etching resist used in this process is an organic polymer which becomes solidified when exposed to ultraviolet lights and has high viscosity of 300 cPs at ambient temperature. A piezoelectric-driven ink jet printhead is used to dispense $20-40\;{\mu}m$ diameter droplets onto the copper substrate to prevent subsequent etching. In this study, factors affecting the pattern formation such as printing resolution, jetting property, adhesion strength, etching and strip mechanism, UV pinning energy have been investigated. As a result, microscale Etch resist patterning of printed circuit board with tens of ${\mu}m$ high have been fabricated.

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Characterization of saturation of CR-39 detector at high alpha-particle fluence

  • Ghazaly, M. El;Hassan, Nabil M.
    • Nuclear Engineering and Technology
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    • v.50 no.3
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    • pp.432-438
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    • 2018
  • The occurrence of saturation in the CR-39 detector reduces and limits its detection dynamic range; nevertheless, this range could be extended using spectroscopic techniques and by measuring the net bulk rate of the saturated CR-39 detector surface. CR-39 detectors were irradiated by 1.5 MeV high alpha-particle fluence varying from $0.06{\times}10^8$ to $7.36{\times}10^8\;alphas/cm^2$ from Am-241 source; thereafter, they were etched in a 6.25N NaOH solution at a temperature of $70^{\circ}C$ for different durations. Net bulk etch rate measurement of the 1.5 MeV alpha-irradiated CR-39 detector surface revealed that rate increases with increasing etching time and reaches its maximum value at the end of the alpha-particle range. It is also correlated with the alpha-particle fluence. The measurements of UV-Visible (UV-Vis) absorbance at 500 and 600 nm reveal that the absorbance is linearly correlated with the fluence of alpha particles at the etching times of 2 and 4 hour. For extended etching times of 6, 10, and 14.5 hour, the absorbance is saturated for fluence values of $4.05{\times}10^8$, $5.30{\times}10^8$, and $7.36{\times}10^8\;alphas/cm^2$. These new methods pave the way to extend the dynamic range of polymer-based solid state nuclear track detectors (SSNTDs) in measurement of high fluence of heavy ions as well as in radiation dosimetry.

Integrated Optical Wave Plates Fabricated by Incorporating Reactive Mesogen in Polymer Waveguide (반응성 메조겐을 이용한 폴리머 광도파로 편광 변환기)

  • Do, Hyun-Soo;Chu, Woo-Sung;Oh, Min-Cheol
    • Korean Journal of Optics and Photonics
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    • v.22 no.5
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    • pp.219-222
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    • 2011
  • Integrated optical waveguide polarization converters are among the essential components for constructing various functional optical integrated circuits. The RM materials have been widely used in liquid crystal displays for fabricating waveplates. In this work, the polarization converters are fabricated by using a solution of Reactive Mesogen(RM) dissolved in liquid crystal(LC). In the middle of the polymer waveguide, a groove is defined by an oxygen plasma etching in a direction perpendicular to the optical waveguide. The solution of RM-LC is inserted to fill up the groove, and then liquid crystal is aligned in a certain direction by applying an electric field. After the alignment, RM materal is crosslinked by UV light so as to form a permanent waveplate. The phase retardation of the waveplate is determined by the width of the groove, and by the birefringence and the degree of alignment of the LC. Polarization conversion efficiency of 90% is obtained for the wavelength of 1550 nm.

Organic-inorganic Hybrid Materials for Spin Coating Hardmask (스핀코팅 하드마스크용 유-무기 하이브리드 소재에 관한 연구)

  • Yu, Je Jeong;Hwang, Seok-Ho;Kim, Sang Bum
    • Applied Chemistry for Engineering
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    • v.22 no.2
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    • pp.230-234
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    • 2011
  • In this work, the primary material for a single layered hardmask which can afford a spin-on process was prepared by the minture of organic and inorganic sources. The preparation of hybrid polymer was attempted by esterification from silanol terminated siloxane compounds and acetonide-2,2-bis(methoxy)propionic acid. The optical, thermal and morphological properties of the test hardmask film was examined in terms of cross-linking agent and additives. In addition, the etch rate of hardmask film and photo resist layer were compared. The hybrid polymer prepared from organic and inorganic materials was found to be useful for hardmask film to form the nano-patterns.

A Study on Characteristics of Polymer Organic Hard Mask Synthesis (고분자 유기하드마스크 합성에 따른 특성에 관한 연구)

  • Woo-Sik Lee
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.16 no.5
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    • pp.217-222
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    • 2023
  • The purpose of this paper was to synthesize a polymer organic hard mask that simplifies the manufacturing process, reduces process time significantly, and thereby lowers manufacturing costs. The results of measuring residual metals through vapor refining showed that 9-Naphthalen-1-ylcarbazole(9-NC) measured 101.75ppb in the 4th zone, 2-Naphthol (2-NA) measured 306.98ppb in the 5th zone, and 9-Fluorenone(9-F) measured between 129.05ppb across the 4th and 5th zones. After passing through a filtration system, the synthesized organic hard mask measured residual metals in the range of 9 to 7ppb. Additionally, the thermal analysis indicated a decrease of 2.78%, a molecular weight of 942, carbon content of 89.74%, and a yield of 72.4%. The etching rate was measured at an average of 18.22Å/s, and the coating thickness deviation was averaged at 1.19. For particle sizes below 0.2㎛ in the organic hard mask, no particles were observed. By varying the coating speed at 1,000, 1,500, and 1,800rpm and measuring the resulting coating thickness, the shrinkage rate ranged from 17.9% to 20.8%. The coating results demonstrated excellent adhesion to SiON, and it was evident that the organic hard mask was uniformly applied.

Chemically Amplified Resist for Extreme UV Lithography (극자외선 리소그래피용 화학증폭형 레지스트)

  • Choi, Jaehak;Nho, Young Chang;Hong, Seong Kwon
    • Applied Chemistry for Engineering
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    • v.17 no.2
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    • pp.158-162
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    • 2006
  • Poly[4-hydroxystyrene-co-2-(4-methoxybutyl)-2-adamantyl methacrylate] was synthesized and evaluated as a matrix resin for extreme UV (EUV) chemically amplified resist. The resist system formulated with this polymer resolved 120 nm line and space (pitch 240 nm) positive patterns using a KrF excimer laser scanner (0.60 NA). The well defined 50 nm line positive patterns (pitch 180 nm) were obtained using an EUV lithography tool. The dry etching resistance of this resist for a $CF_{4}$-based plasma was 1.1 times better than that of poly(4-hydroxystyrene).

Study on Printing Roll Manufacturing by using 3 Dimensional Laser Scanner (3차원 레이저 스캐너를 이용한 인쇄롤 가공에 관한 연구)

  • Kang, Heeshin;Noh, Jiwhan;Sohn, Hyonkee
    • Laser Solutions
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    • v.16 no.4
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    • pp.17-23
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    • 2013
  • The research for the development of roll-to-roll printing process is actively underway on behalf of the existing semiconductor process. The roll-to-roll printing system can make the electronic devices to low-cost mass production. This study is performed for developing the manufacturing technology of the printing roll used in the printing process of electronic devices. The indirect laser engraving technology is used to create printable roll and the printable roll is made out of the chrome coated roll after coating copper and polymer on the surface of steel roll, ablating the polymer on the surface of roll and etching the roll. The 3 dimensional laser scanner and roll rotating systems are constructed and the system control program is developed. We have used the fiber laser of 100 W grade, the 3 dimensional laser scanner and the 3 axes moving stage system with a rotating axis. We have found the optimal conditions by performing the laser patterning experiments and can make the minimum line width of $24{\mu}m$ by using the developed 3 dimensional laser scanner system.

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