• 제목/요약/키워드: polymer TFT

검색결과 48건 처리시간 0.029초

All Inkjet Printed Plastic RFID Tag

  • Cho, Gyou-Jin;Song, Jae-Hee;Jung, Min-Hoon;Lee, Bock-Im;Kim, Sun-Hee;Lim, Nam-Soo;Lee, Na-Young
    • 한국고분자학회:학술대회논문집
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    • 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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    • pp.171-171
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    • 2006
  • In this presentation, we would like to report an inkjet printing method to produce 1 to 2 bit RFID tag working in the range of 6 to 28 MHz with or without transistors. The inkjet printing method especially for the formation of transistors, inductors, capacitors will be presented by the view of polymer chemistry. This presentation also includes the printing schemes for memory cell, ring oscillator, rectifier, antenna, and so forth for constructing RFID tag. I illustrate these strategies by describing recent my works on the formation of all SWNT-TFT and conducting polymer-silver nanocomposite inks that can be applied in the construction of electronic devices.

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고분자 기판위에 Poly-Si TFT 제작시 Mis-align방지를 위한 연구 (A Study on the Mis-align during Fabricated Poly-Si TFT on Polymer substrate)

  • 강수희;황정연;서대식;김영훈;문대규;한정인
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 춘계학술대회 논문집 디스플레이 광소자 분야
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    • pp.173-176
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    • 2005
  • Teijin사의 HT100-B60의 폴리카보네이트(polycarbonate) $100{\mu}m$, I-Component사의 PES(polyethersulfone) $200{\mu}m$, Ferrania사의 PAR(polyacrylate) $100{\mu}m$$200{\mu}m$를 사용하였다 열팽창계수의 차이로 인해 공정상 기판의 가열과 냉각시 열응력이 발생하여 기판의 크랙발생의 원인이 된다. 이를 최소화하기 위해 모든 공정이 시작하기 전에 pre-annealing을 통해 plastic 기판의 시간별 공정을 실시하였다. plastic film의 annealing time은 0h, 12h, 24, 40h, 50h, 60h, 70h, 80h으로 사간을 달리하여 오븐 안의 진공상태를 조성하여 실험하였다. Thermal evaporator로 Al을 약 170nm 증착하였으며 (주)동진 세미캠의 DTFR-1011s DR LCD용 감광액을 Spin Coating Spread(500rpm/6sec), Spin(3000rpm/20sec)으로 coating하였다.

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Synthesis and characterization of negative-type photosensitive polyimides for TFT-LCD array

  • Kim, Hyo-Jin;Kim, Hyun-Suk;Kim, Soon-Hak;Park, Lee-Soon;Hur, Young-Hune;Lee, Yoon-Soo;Song, Gab-Deuk;Kwon, Young-Hwan
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.1625-1628
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    • 2006
  • Two different negative-type photosensitive polyimides were synthesized and characterized for an application as an interdielectric layer in TFTLCD array. In the case of photocurable polyimides, the photosensitive moiety, 2-HHSP, was synthesized through 3 step reaction, and then was incorporated into side chains of polyimide precursor by post reaction. Optimum compositions of negative-type photocurable polyimde were also formulated. For photopolymerizable polyimides, two novel UV monomers containing imide linkages were prepared. An aqueous alkaline developable polymer matrix was synthesized by free radical copolymerization. A negative photoresist formulation was developed utilizing synthesized UV monomers containing imide linkage, photoinitiator, UV oligomer, and alkali developable polymer matrix. It was found that viaholes with good resolution, high transmittance and thermal resistance could be obtained by photolithographic process utilizing the negative-type photoresist formulations.

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유기트랜지스터용 p-type 유기반도체 개발 (New p-type Organic Semiconducting Materials for Organic Transistor)

  • 강인남;이지훈
    • 한국전기전자재료학회논문지
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    • 제19권6호
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    • pp.558-562
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    • 2006
  • We have synthesized a new p-type polymer, poly(9,9'-n-dioctylfluorene-alt-phenoxazine) (PFPO), via the palladium catalyzed coupling reaction. The number average molecular weight ($M_n$) of PFPO was found to be 23,000. PFPO dissolves in common organic solvents such as chloroform and toluene. The UV-visible absorption maximum of the PFPO thin film is clearly blue-shifted with respect to that of F8T2, poly-(9,9'-n-dioctylfluorene-alt-bithiophene). The introduction of the phenoxazine moiety into the polymer system results in better field-effect transistor (FET) performance than that of F8T2. A solution processed PFPO TFT device with a top contact geometry was found to exhibit a hole mobility of $2.7{\times}10^{-4}cm^2/Vs$ and a low threshold voltage of -2 V with high on/off ratio(${\sim}10^4$).

Plastic Substrate for Flexible TFT LCD

  • Hwang, Hee-Nam;Choi, Jae-Moon;Yeom, Eun-Hee;Park, Yong-Ho;Kim, Lee-Ju;You, Ho-Young;Lee, Ki-Ho;Kim, In-Sun
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.1406-1408
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    • 2006
  • Plastic substrate for flexible TFT LCD is developed. The gas barrier, optical properties and conductivity in the substrate is improved through depositing silicon oxide/nitride layer and ITO layer, coating polymer layer on plastic film by sputtering process and wet coating process. The whole production process of the plastic substrate is guaranteed the productivity by using roll to roll process.

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Characteristics of Poly-Si TFTs Fabricated on Flexible Substrates using Sputter Deposited a-Si Films

  • Kim, Y.H.;Moon, D.G.;Kim, W.K.;Han, J.I.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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    • pp.297-300
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    • 2005
  • The characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) fabricated using sputter deposited amorphous silicon (a-Si) precursor films are investigated. The a-Si films were deposited on flexible polymer substrates using argon-helium mixture gases to minimize the argon incorporation into the film. The precursor films were then laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated pMOS TFT showed field-effect mobility of $32.4cm^2/V{\cdot}s$ and on/off ratio of $10^6$.

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두 개의 트랜지스터로 구동되는 In-Plane Switching (IPS) 액정 디스플레이 (In-Plane Switching Liquid Crystal Display using Two Transistors)

  • 정준호;박지웅;김민수;하경수;이승희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.308-309
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    • 2008
  • We have proposed a high performance liquid crystal display using two thin film transistors (TFTs) for the large size TFT-LCD desirably 42inch WXGA panel for TVs. The device generates stronger electric fields to reorient liquid crystals than that in the conventional IPS device because the voltages with opposite polarity with respect to the common electrode are applied to each finger-type electrode. As a result, the operation voltage of 2Tr-IPS mode can be decreased and the transmittance can be increased compared to conventional IPS device. Consequently, the 2Tr-IPS has all the advantages over conventional IPS from large size point of view.

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Bottom Gate IGZO 박막트랜지스터를 이용한 투명 AMOLED 패널 제작 (AMOLED Panel Using Transparent Bottom Gate IGZO TFT)

  • 조두희;양신혁;변춘원;신재헌;이정익;박은숙;권오상;황치선;추혜용;조경익
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 춘계학술대회 및 기술 세미나 논문집 디스플레이 광소자
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    • pp.39-40
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    • 2008
  • We have examined post-annealing and passivation for the transparent bottom gate IGZO TFT having an inverse co-planar structure. The oxygen-vacuum two step annealing enhanced the field effect mobility up to 18 $cm^2$/Vsandthesub-threshold swing down to 0.2V/dec. However, the hysterysis and the bias stability problems could not be solved just by post-annealing. Thus, we have passivated the bottom gate IGZO TFTs with organic and inorganic materials. $Ga_2O_3$, $Al_2O_3$, $SiO_2$ and some polymer materials were effective materials for passivations. The hysterysis and the stability of the TFTs were remarkably improved by the passivations. We have manufactured the AMOLED panel with the transparent bottom gate IGZO TFT array successfully.

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Application of Polymer Network Liquid Crystal to Mobile Display and its Electro-Optical Characteristics

  • Woo, Sung-Ho;Jeon, Chan-Wook;Yang, Kee-Jeong;Choi, Byeong-Dae;Rajesh, Kumar;Ahn, Byung-Chul
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.1473-1475
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    • 2006
  • The electro-optic properties of an active-matrix polymer network liquid crystal display (AM-PNLCD) with crossed polarizer films to improve its contrast ratio were evaluated. By using crossed polarizer films, it shows good contrast ratio as well as wide viewing angle and adequate response time at normal TFT-twisted nematic (TN) LCD driving voltage (2.8V).

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Nanofiber Aligned within Ordered Conducting Polymer TFT

  • Hur, Jae-Hyun;Cha, Seung-Nam;Yoon, Chi-Yul;Kim, Seong-Min;Park, Jong-Jin;Kim, Jong-Min
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.315-317
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    • 2009
  • We report the preparation of novel nanofiber organic semiconductors that can be utilized as the active channel materials in the field effect transistors (FETs). The nanofibers produced by the electrospinning reveals the excellent performances (mobility ~ 0.16 $cm^2$/V) due to thier highly ordered molecular packing in the polymer matrix.

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