• Geomechanics and Engineering
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• v.31 no.3
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• pp.249-263
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• 2022

The specially-shaped Polycrystalline Diamond Compact (PDC) cutter is widely used in drill bit design due to its advantages of high rock cutting efficiency, strong impact resistance and long service life in hard and abrasive formation drilling. A detailed understanding of rock cutting behavior of worn specially-shaped PDC cutter is essential to improve the drilling efficiency and decrease the drilling costs. In this paper, the theoretical models of two new principles (loading performance (LP) and cutting performance (CP)) are derived for evaluating the cutting process of worn specially-shaped cutter, the theoretical models consider the factors, such as cutter geometry, aggressiveness, stress state, working life, and rock cutting efficiency. Besides, the numerical model of heterogeneous granite is developed using finite element method combined with Voronoi tessellation, the LP and CP of 12 kinds of worn specially-shaped PDC (SPDC) cutters are analyzed. The results found that the mechanical specific energy (MSE) of worn cutters first increase and then decrease with increasing the cutting depth, and the MSE increase with the increase of back rake angle except for Conical cutter and Wedge-shaped cutter. From the perspective of CP, the worn PDC cutters are more suitable for the smaller cutting depths, and the back rake angle has little effect on the CP of the specially-shaped worn PDC cutters. Conical cutter, Saddle-shaped cutter and Ellipse-shaped cutter have the highest CP value, while Rhombus-shaped cutter, Convex cutter and Wedge-shaped cutter have the lowest value in selecting cutters. This research leads to an enhanced understanding of rock-breaking mechanisms of worn SPDC cutters, and provides the basis to select of specially-shaped PDC cutters for the specific target formation.

• Progress in Superconductivity and Cryogenics
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• v.25 no.4
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• pp.5-9
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• 2023

Lee, Kim, et al. reported in July 2023 that a modified lead apatite material, Pb_10-xCu_x(PO₄)₆O (0.9 < x < 1.1), exhibited superconductivity at room temperature and atmospheric pressure [1, 2]. However, their X-ray diffraction data clearly showed the presence of impurity phases, including Cu₂S, raising uncertainty about the sample quality. Subsequent studies have been conducted; however, different samples exhibited various physical properties. To verify the recipe for the sample growth process, we synthesized samples following the methodology outlined in the reference [1, 2]. An analysis of the structure and physical properties of the synthesized sample reaffirms the critical importance of high-quality sample growth.

• Current Optics and Photonics
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• v.7 no.6
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• pp.738-744
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• 2023

Graphene-based saturable absorbers (SAs) are widely used as laser mode-lockers at various laser oscillators. In particular, transmission-type graphene-SAs with ultrabroad spectral coverage are typically manufactured on transparent substrates with low nonlinearity to minimize the effects on the oscillators. Here, we developed two types of transmitting graphene SAs based on CaF₂ and ZnSe. Using the graphene-SA based on CaF₂, a passively mode-locked mid-infrared Cr:ZnS laser delivers relatively long 540 fs pulses with a maximum output power of up to 760 mW. In the negative net cavity dispersion regime, the pulse width was not reduced further by inhomogeneous group delay dispersion (GDD) compensation. In the same laser cavity, we replaced only the graphene-SA based on CaF₂ with the SA based on ZnSe. Due to the additional self-phase modulation effect induced by the ZnSe substrate with high nonlinearity, the stably mode-locked Cr:ZnS laser produced Fourier transform-limited ~130 fs near 2,340 nm. In the stable single-pulse operation regime, average output powers up to 635 mW at 234 MHz repetition rates were achieved. To our knowledge, this is the first attempt to achieve shorter pulse widths from a polycrystalline Cr:ZnS laser by utilizing the graphene deposited on the substrate with high nonlinearity.

• The korean journal of orthodontics
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• v.30 no.5 s.82
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• pp.613-623
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• 2000

The purpose of this study was to amount of the frictional forces with the brackets and wires, ligation methods, dry/wet, offsets, interbracket distances, velocity and to compare them each other by different conditions. This study tested 0.018'x0.025' slot sized 8 types of orthodontic bracket systems and 0.016', 0.016'x0.022' sized stainless steel, NiTi, Cu-NiTi orthodontic wires. One cuspid bracket were positioned on the slide glass and archwire was engaged into bracket and ligated with elastomeric modules. The values of frictional forces were measured with the instron universal testing machine. The results were as follows; 1. Polycrystalline ceramic bracket had the highest mean frictional forces and followed and by ceramic reinforced plastic bracket, metal bracket, plastic bracket with metal slot, monocrystalline ceramic bracket, single bracket, self-ligating bracket, friction free bracket in descending order. The self-ligating bracket showed low frictional forces in the round wires and high frictional forces in the rectangular wires. 2. Stainless steel wires had the least frictional forces and followed by NiTi, Cu-NiTi wires in descending order. Round wires had lower frictional forces then that of rectangular wires. 3. The stainless steel ligation method had significantly greater mean frictional forces them the elastomeric module ligation method. 4. Artificial saliva statistically increased the frictional forces in stainless steel wire, NiTi wire and Cu-NiTi wire. 5. There was a statistically significant difference with offset change 6. There was no statistically significant difference with interbracket distance in stainless steel wires but a significant difference in NiTi wires as the interbracket was decreased. 7 There was no statistically significant difference with velocity change. From the above findings, self-ligating bracket, stainless steel wires and the elastomeric module ligation method might be effective than any other materials to reduce the frictional forces in the orthodontic treatment and can be correlated to clinical situations seen in orthodontic patient care.

• The korean journal of orthodontics
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• v.39 no.4
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• pp.213-224
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• 2009

Objective: The aim of this study was to find out whether Er:YAG laser can aid in debonding ceramic brackets, and to see what kind of method will be the most appropriate for debonding. Methods: One hundred and ninety teeth, monocrystalline brackets ($MISO^{TM}$, HT, Ansan-Si, Korea), polycrystalline brackets ($Transcend^{TM}$ series 6000, 3M Untek, Monrovia, CA, USA) and the KEY Laser3 (KavoDental, Biberach, Germany) were used. Experimental groups were classified according to the type of ceramic brackets, and the amount of laser energy (0, 140, 300, 450, 600 mJ). After applying laser on the bracket at two points at 1 pulse each, the shear bond strength was measured. The effect of heat caused by laser was measured at the enamel beneath the bracket and pulp chamber. After measuring the shear bond strength, adhesive residue was evaluated and enamel surface was investigated using SEM. Results: All ceramic bracket groups showed a significant decrease in shear bond strength as the laser energy increased. The greatest average temperature change was $3.78^{\circ}C$ on the enamel beneath the bracket and $0.9^{\circ}C$ on the pulp chamber. Through SEM, crater shape holes caused by the laser was seen on the enamel and adhesive surfaces. Conclusions: If laser is applied on ceramic brackets for debonding, 300 - 450 mJ of laser energy will be safe and efficient for monocrystalline brackets ($MISO^{TM}$), and about 450 mJ for polycrystalline brackets ($Transcend^{TM}$ series 6000).

• Journal of the Korean Magnetics Society
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• v.13 no.1
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• pp.36-40
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• 2003

We have grown D $y_{x}$B $i_{3-x}$F $e_{5}$ $O_{12}$ (x = 0.5,1.0, 1.5,2.0) magnetic garnet thin films upon $Al_2$O3i and GGG substrate using Pechini process. The annealing temperature to get single phase D $y_{x}$B $i_{3-x}$F $e_{5}$ $O_{12}$ garnet is dependent on substrate, i.e. the annealing temperature for GGG substrate il 5$0^{\circ}C$ lower than that for $Al_2$ $O_3$ substrate. The grains of garnet thin film grown on GGG (111) plane align along [111] direction, and in this case the hysteresis curve does not saturate up to H : 5000 Oe. We attribute this phenomenon to rotation magnetization process. The maximum amount of Bi substitution in polycrystalline D $y_{x}$B $i_{3-x}$F $e_{5}$ $O_{12}$ thin film prepared by Pechini process is restricted to 2.0 Bi atom/unit cell, and this value is less than that in single garnet crystall grown by LPE method.own by LPE method.ethod.

• Journal of the Korean Chemical Society
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• v.31 no.4
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• pp.301-307
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• 1987

The electrical conductivity of highly pure polycrystalline sample of $La_2O_3$ has been measured at temperatures from $600^{\circ}C$ to $1,050^{\circ}C$ and oxygen pressure range of $1{\times}10^{-6}$ torr to $1{\times}10^2$ torr. The defect structure and semiconductor type are investigated by measuring the temperature and oxygen pressure dependences of electrical conductivity. Sintered $La_2O_3$ exhibits the electrical conductivities in the range of $1{\times}10^{-9}\;to\;1{\times}10^{-3}\;ohm^{-1}{\cdot}cm^{-1}$ under the above oxygen pressures. The oxygen pressure dependences on electrical conductivity are characterized by 5.3 at $1,000^{\circ}C$ and 5.7 at $700^{\circ}C$ and more higher values of 9∼14 below $700^{\circ}C$. The increase in n value with decreasing temperature indicates that a simple conduction mechanism does not exist in this material. The conduction carriers are not metal vacancy but oxygen ion at lower pressures. The conduction data indicate a significant ionic conduction at lower temperatures and electronic conduction at higher temperatures.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.3
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• pp.691-698
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• 2010

In this study Al-doped ZnO (AZO) thin films have been fabricated on Eagle 2000 glass substrates at various substrate temperature ($100{\sim}500^{\circ}C$) and working pressure (10 ~ 40 mTorr) by RF magnetron sputtering in order to investigate the structural, electrical, and optical properties of the AZO thin films. The obtained films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (002) crystallographic direction. The AZO thin films, which were deposited at $T=300^{\circ}C$ for 10 mTorr, shows the highest (002) orientation, and the full width at half maximum (FWHM) of the (002) diffraction peak is $0.42^{\circ}$. The lowest resistivity ($2.64{\times}10^{-3}\;{\Omega}cm$) with the highest cartier concentration ($5.29{\times}10^{20}\;cm^{-3}$) and a Hall mobility of ($6.23\;cm^2/Vs$) are obtained in the AZO thin films deposited at $T=300^{\circ}C$ for 10 mTorr. The optical transmittance in the visible region is approximately 80%, regardless of process conditions. The optical band-gap depends on the Al doping level as the substrate temperature increases and the working pressure decrease. The optical band-gap widening is proportional to cartier concentration due to the Burstein-Moss effect.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.254-255
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• 2012

Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.

• Korean Journal of Materials Research
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• v.24 no.9
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• pp.443-450
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• 2014

Amorphous (a-Si) films were epitaxially crystallized on a very thin large-grained poly-Si seed layer by a silicide-enhanced rapid thermal annealing (SERTA) process. The poly-Si seed layer contained a small amount of nickel silicide which can enhance crystallization of the upper layer of the a-Si film at lower temperature. A 5-nm thick poly-Si seed layer was then prepared by the crystallization of an a-Si film using the vapor-induced crystallization process in a $NiCl_2$ environment. After removing surface oxide on the seed layer, a 45-nm thick a-Si film was deposited on the poly-Si seed layer by hot-wire chemical vapor deposition at $200^{\circ}C$. The epitaxial crystallization of the top a-Si layer was performed by the rapid thermal annealing (RTA) process at $730^{\circ}C$ for 5 min in Ar as an ambient atmosphere. Considering the needle-like grains as well as the crystallization temperature of the top layer as produced by the SERTA process, it was thought that the top a-Si layer was epitaxially crystallized with the help of $NiSi_2$ precipitates that originated from the poly-Si seed layer. The crystallinity of the SERTA processed poly-Si thin films was better than the other crystallization process, due to the high-temperature RTA process. The Ni concentration in the poly-Si film fabricated by the SERTA process was reduced to $1{\times}10^{18}cm^{-3}$. The maximum field-effect mobility and substrate swing of the p-channel poly-Si thin-film transistors (TFTs) using the poly-Si film prepared by the SERTA process were $85cm^2/V{\cdot}s$ and 1.23 V/decade at $V_{ds}=-3V$, respectively. The off current was little increased under reverse bias from $1.0{\times}10^{-11}$ A. Our results showed that the SERTA process is a promising technology for high quality poly-Si film, which enables the fabrication of high mobility TFTs. In addition, it is expected that poly-Si TFTs with low leakage current can be fabricated with more precise experiments.