• Transactions of the Korean Society of Mechanical Engineers B
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• v.36 no.10
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• pp.1019-1023
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• 2012

In this research, a novel direct-aluminum-heating-induced crystallization method was developed for the purpose of application to solar cells. By applying a constant current of 3 A to an aluminum thin film, a 200-nm-thick amorphous silicon (a-Si) thin film with a size of $1cm{\times}1cm$ can be crystallized into a polycrystalline silicon (poly-Si) thin film within a few tens of seconds. The Raman spectrum analysis shows a peak of 520 $cm^{-1}$, which verifies the presence of poly-Si. After removing the aluminum layer, the poly-Si thin film was found to be porous. SIMS analysis showed that the porous poly-Si thin film was heavily p-doped with a doping concentration of $10^{21}cm^{-3}$. Thermal imaging shows that the crystallization from a-Si to poly-Si occurred at a temperature of around 820 K.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.36 no.6
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• pp.591-598
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• 2012

In this study, the cutting characteristics of bulk metallic glass (BMG) cut using a computer numerically controlled (CNC) lathe were investigated for different insert tool materials and cutting speeds. The surface roughness, chip morphology, cutting forces, and tool wear during turning of $Zr_{50}Cu_{40}Al_{10}$ BMG alloy were examined. Four kinds of tool materials were used to cut an 8-mm-diameter BMG. The examination of the surface roughnesses of the BMG specimens machined at each cutting speed showed that the surface roughness became better as the cutting speed increased, and the tool materials also influenced the surface roughness. The chip morphology investigations showed that the unoxidized BMG chips had serrated curled chips with adiabatic shear bands, while the oxidized chips exhibited local melting and tangling rather than the usual spiral-shaped chips. The cutting force induced during machining of the Zr-based BMG was the largest for the TiN-WC tool, followed by the polycrystalline diamond (PCD) tool. The cermet tool exerted the smallest cutting force.

• Journal of the Korean Society for Heat Treatment
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• v.12 no.1
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• pp.31-39
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• 1999

In the present study, oxidation behavior of 304 and 316 stainless steels was investigated. After solution treatment, specimens were polished up to $1{\mu}m$ $Al_2O_3$ grade and then subjected to oxidation treatment in dry air. The range of temperature was used for oxidation treatment at $300^{\circ}C{\sim}500^{\circ}C$ and TEM was used for analyzing the components and structure of oxide film. Also, these results were compared with the results of ESCA and TG. According to the results of TEM analysis, it was found that Cr oxide film was formed on top of the surface after room temperature oxidation but amorphous Fe oxide was formed on top of the surface and polycrystalline $(Cr,Fe)_2O_3$ was formed below the amorphous Fe oxide layer after $500^{\circ}C$ oxidation treatment. The oxidized specimens at $500^{\circ}C$ showed that 316 stainless steel resists more strongly to grain and grain boundary oxidation than 304 stainless steel. These results suggested that Mo component resolved in 316 stainless steel matrix suppressed the formation of Cr carbide which may results in local Cr deplete area.

• 한국신재생에너지학회:학술대회논문집
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• 2005.06a
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• pp.397-402
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• 2005

Photovoltaic (PV) module can generate electricity using sunlight without causing any environmental degradation. Due to higher fossil fuel prices and environmental awareness, PV applications are becoming more popular as clean source of electricity generation. PV output is sensitive to the operating temperature and can be drastically affected in Building Integrated PV (BIPV) systems. PV Solarwall (SWPV) combination and PV systems have been evaluated in this study for improvement in electrical output and system costs. PV modules under forced ventilation. A 75W polycrystalline silicon PV module was fixed on SW in front of the ventilation fan as it was indicated to be the coolest position on the SW in phoenix simulations. The effectiveness of cooling by means of the forced ventilating air stream has been studied experimentally. The results indicate that there appears to be significant difference in temperature as well as electricity output comparing the SWPV and BIPV options. Electrical output power recovered is about $4\%$ during the typical day of the month of February. RETScreen(R) analysis of a 3kW PV system hypothetically located at Taegu has shown that with typical temperature reduction of $15^{{\circ}C$, it is possible to reduce the simple payback periods by one year. The work described in this paper may be viewed as an appraisal of a SWPV system based on its improved electrical and financial performances due to its ability to operate at relatively lower temperatures.

• Progress in Superconductivity
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• v.11 no.1
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• pp.25-29
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• 2009

Polycrystalline samples of $(R_{0.8}Ca_{0.2})Ba_2Cu_3O_{7-z}$ (R = Lu and Y) were synthesized by a solid-state reaction route, and the phase stabilities were examined by heating at temperatures between $800^{\circ}C$ and $900^{\circ}C$ in various atmospheres. A comparative analyses of the x-ray diffraction data of the $(Lu_{0.8}Ca_{0.2})Ba_2Cu_3O_{7-z}$ and $(Y_{0.8}Ca_{0.2})Ba_2Cu_3O_{7-z}$ compounds showed that the 123 phase of both compounds is stable under heating in air and $O_2$ of 1 atm. However, contrary to the $(Y_{0.8}Ca_{0.2})Ba_2Cu_3O_{7-z}$ compound, the $(Lu_{0.8}Ca_{0.2})Ba_2Cu_3O_z$ compound was found to become unstable when heated in the low oxygen partial pressure below about 8 % $O_2\;in\;N_2$, Considering the instability of parent $LuBa_2Cu_3O_z$ compound, this result suggests that the phase stability of Lu-based 123 compounds is sensitive to both the composition and the oxygen partial pressure.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.213-218
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• 2001

ZnO and ZnO:In films were deposited on the glass substrates by a spray pyrolysis method. It is found that ZnO films were polycrystalline with the preferred orientation (002) and have a hexagonal structure with lattice constants of a=3.242 $\AA$ and c=5.237 $\AA$. The crystalline structure of ZnO:In films deposited at the In content of 0~6.03 at. % were the same as that of ZnO films, but its lattice constants was slightly larger than those of ZnO films. The relative atomic ratios of metal ion of ZnO:In films were in accordance with those of the spray solution within the experimental error. The minimum resistivity of and the maximum carrier concentration of 19.1 $\Omega\cdot\textrm{cm}$ and the maximum carrier concentration of $2.11\times10^{19}\textrm{cm}^{-3]$ obtained from the ZnO:In films when In content was 2.76 at. %. The optical transmission of the sample grown at the In content of 3.93 at. % was about 95% in the wavelength between 400 and 800 nm.

• Korean Journal of Materials Research
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• v.10 no.9
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• pp.607-611
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• 2000

Zr modified $(Ba_{1-x},Sr_x)TiO_3$ thin films as capacitor for high density DRAM were deposited by r.f. magnetron sputtering. The films deposited at various chamber pressure exhibited a polycrystalline structure. The Zr/Ti ratio of the films increased significantly with decreasing the chamber pressure and this variation affected the microstructure and surface roughness of films When chamber pressure increased dielectric constant of the films effected due to decrease of Zr. The thin films prepared in this study show dielectric constant of 380 to 525 at 100KHz. The variation of capacitance and polarization measured as a function of bias voltage suggested that all films were paraelectric phases. Leakage current exhibited smaller value as chamber pressure decrease and the leakage current density of the films deposited above 10mTorr was $10^{-7}~10^{-8}A/cm^2$ order at 200kV/cm. $(Ba_{1-x},Sr_x)(Ti_{1-y},Zr_y)O_3$ thin films in this study appeared to be potential thin film capacitor for high density DRAM.

• Korean Journal of Materials Research
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• v.3 no.4
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• pp.336-343
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• 1993

The standard map for polyerystalline $YBa_2Cu_3O_7$-X was construeted and indexed from pressed tape sintered bulk and compressed bulk samples were drawn by the [001-110-110] stereographie quadrant map and by the ECPs from individual grains of the speeimens. The relationship between the (001) texture development and critical current density (Jc) for various samples was discussed. An (001) orintation was preferred in the pressed tape thickness was decreased. and in the compressed bulk as the compression strain was increaesed.The (001) orientation made a signifieant in crease on Jc. We conclded that an ECP technique was very useful for the analysis of the orientation distribution in small-sized $YBa_2Cu_3O_7$-X specimens such as superonducting tapes or thin films.

• Current Industrial and Technological Trends in Aerospace
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• v.7 no.2
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• pp.76-84
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• 2009

In this review an attempt is made to give the background to the current trends in foreign developments in the ceramic matrix composites for space vehicles. The lightweight and high temperature specific modulus properties of ceramic composites have continued to develop for designing advanced propulsion structures and for increasing space vehicle performances. Those applications require advanced materials with good resistance to high temperatures, to oxidation environments and to mechanical stresses. The advantages of ceramic matrix composites are the low specific weight, the high specific strength over a wide temperature ranges, and their good damage tolerance compared to tungsten, pyrographites and polycrystalline graphites. Due to these advantages ceramic matrix composites are currently used in rocket engine chamber, nozzle, solar array, radar antenna, mirror support structures, hypersonic leading edge articles, heat shields, reentry vehicle nose tips, and radiators for spacecraft. Various processes are discussed together with examples of current application so that some of the advanced technologies can be possibly applied to Korean space technology.

• Korean Journal of Crystallography
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• v.3 no.1
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• pp.23-30
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• 1992

a-SiC crystals were grown on the (001) plane of a-SiC seed crystals by sublimation method to find effects of pressure-reduction rate of the crystal growth furnace own the growth rate and orientstion of grown SiC crystals. Pressure-reduction rate at the initial growth stage affected the crystallinity of grown SiC crystals. In case of high pressure-reduction rate, growth rate was high and 3csic polycrystalline was grown on the seed. On the other hand, low pressure-reduction rate caused the growth rate to be slow and 6H-SiC single crystal was grown on the seed. However, even after growing SiC for 2 hours under the condition in which.