• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.281-287
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• 2002

The stochiometric composition of AgGaS$_2$ polycrystal source materials for the AgGaS$_2$/GaAs epilayer was prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns it was found that the polycrystal AgGaS$_2$ has tetragonal structure of which lattice constant a$\sub$0/ and c$\sub$0/ were 5.756 ${\AA}$ and 10.305 ${\AA}$, respectively. AgGaS$_2$/GaAs epilayer was deposited on throughly etched GaAs(100) substrate from mixed crystal AgGaS$_2$ by the Hot Wall Epitaxy (100) system. The source and substrate temperature were 590$^{\circ}C$ and 440$^{\circ}C$ respectively. The crystallinity of the grown AgGaS$_2$/GaAs epilayer was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for AgGaS$_2$/GaAs epilayer at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by ${\alpha}$ : 8.695${\times}$10$\^$-4/ eV/K, and ${\beta}$ = 332 K. From the photocurrent spectra by illumination of polarized light of the AgGaS$_2$/GaAs epilayer, we have found that crystal field splitting ΔCr was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pain are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.56-59
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• 2004

The stochiometric composition of $AgGaS_2$ polycrystal source materials for the $AgGaS_2/GaAs$ epilayer was prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns it was found that the polycrystal $AgGaS_2$ has tetragonal structure of which lattice constant $a_0$ and $c_0$ were 5.756 ${\AA}$ and 10.305 ${\AA}$, respectively. $AgGaS_2/GaAs$ epilayer was deposited on throughly etched GaAs (100) substrate from mixed crystal $AgGaS_2$ by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $590^{\circ}C$ and $440^{\circ}C$ respectively. The crystallinity of the grown $AgGaS_2/GaAs$ epilayer was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for $AgGaS_2/GaAs$ epilayer at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by ${\alpha}=8.695{\times}10^{-4}eV/K$, and $\beta$=332 K. From the photocurrent spectra by illumination of polarized light of the $AgGaS_2/GaAs$ epilayer, we have found that crystal field splitting $\Delta$ Cr was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pairs are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• The Journal of Advanced Prosthodontics
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• v.11 no.3
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• pp.162-168
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• 2019

PURPOSE. The aim of this study was to evaluate the effect of occlusal adjustments on the surface roughness of yttria-tetragonal zirconia polycrystal (Y-TZP) and wear of opposing artificial enamel. MATERIALS AND METHODS. Twenty-five Y-TZP slabs from each brand (Lava, 3M and Bruxzir, Glidewell Laboratories) with different surface conditions (Control polished - CPZ; Polished/ground - GRZ; Polished/ground/repolished - RPZ; Glazed - GZ; Porcelain-veneered - PVZ; n=5) were abraded (500,000 cycles, 80 N) against artificial enamel (6 mm diameter steatite). Y-TZP roughness (in ${\mu}m$) before and after chewing simulation (CS) and antagonist steatite volume loss (in $mm^3$) were evaluated using a contact surface profilometer. Y-TZP roughness was analyzed by three-way analysis of variance (ANOVA) and steatite wear by two-way ANOVA and Tukey Honest Difference (HSD) (P=.05). RESULTS. There was no effect of Y-TZP brand on surface roughness (P=.216) and steatite loss (P=.064). A significant interaction effect (P<.001) between surface condition and CS on Y-TZP roughness was observed. GZ specimens showed higher roughness after CS (before CS - $3.7{\pm}1.8{\mu}m$; after CS - $13.54{\pm}3.11{\mu}m$), with partial removal of the glaze layer. Indenters abraded against CPZ ($0.09{\pm}0.03mm^3$) were worn more than those abraded against PVZ ($0.02{\pm}0.01mm^3$) and GZ ($0.02{\pm}0.01mm^3$). Higher wear caused by direct abrasion against zirconia was confirmed by SEM. CONCLUSION. Polishing with an intraoral polishing system did not reduce the roughness of zirconia. Wear of the opposing artificial enamel was affected by the material on the surface rather than the finishing technique applied, indicating that polished zirconia is more deleterious to artificial enamel than are glazed and porcelain-veneered restorations.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2008.10a
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• pp.102-105
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• 2008

To investigate the evolution of deformation texture during cold rolling deformation, cold rolling process on a commercial Al-5% Mg sheet was carried out at different rolling reduction ratio. The evolution of annealing texture in cold-rolled Al-5% Mg sheet was also investigated. The evolution of recrystallization texture during annealing process strongly depends on the rolling reduction ratio before heat treatment. Visco-plastic self-consistent (VPSC) polycrystal model was used to predict r-value anisotropy of the cold-rolled and annealed Al-5% Mg sheets. The change of volume fraction for the major texture components was also analyzed.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.601-604
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• 1998

NOX detecting gas sensors using TiO2 doped tungsten oxide semiconductor were prepared and their electrical and sensing characteristics have been investigated. In normal air condition, the sensors of WO3, TiO2 doped WO3 show grain boundary heights of 0.34 eV, 0.25 eV, respectively. The grain boundary barrier energy variation was increased by doping TiO2 into large variation of resistance to NOX gases. And doping the TiO2 4 wt.%, the particle size of WO3 polycrystal films showed higher sensitivity and better sorption characteristics to NOX gas than the pure WO3 films material in air at operating temperature of $350^{\circ}C.$ The TiO2 doped WO3 semiconductor gas sensor shows nano-sized particle size and good sensitivity to sub-ppm concentration of NOX.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.5
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• pp.372-376
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• 2012

This study focused on the performance characteristics of solar cell using the impedance technique. We measured an impedance according to frequency from 1 Hz until 1 MHz. It could know that the impedance was decreased according to the frequency increases in solar cell. The impedance of single crystal solar cell was 0.61 ${\Omega}$ at 1 Hz, and kept almost settled value to $1{\times}10^2$ Hz. However, the impedance of polycrystal solar cell was $7{\times}10^3{\Omega}$ at 1 Hz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.269-272
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• 1995

As methane concentration was varietal, the textures of diamond films deposited on Si(100)substrate could be observed by XRD, SEM and Raman spectroscope. As a result, O$_2$plasma etching has been useful to observe microscopic structure of diamond films by SEM. The cross section of diamond films deposited on Si(100) substrate with 4% concentration of methane to hydrogen was a polycrystal like a pillar. The diamond crystal like a pillar has been oriented to (110) surface and the high quality diamond with FWHM of Raman spectra being 3.8cm$\^$-1/ has been grown. As time goes by deposition time, the preferred orientation increases.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.75-76
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• 2006

olycrystailine CdSe thin films were grown on ceramic substrate using a chemical bath deposition (CBD)method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdSe polycrystal structure. Its grain size was about 0.3 ${\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and movility depending on temperature. We measured also spectral response, sensitivity($\gamma$), maximum allowable power dissipation and response time on these samples.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2000.10a
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• pp.70-73
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• 2000

A finite element analysis model is suggested for analysis of forming process of milli structure whose size is from a few hundreds ${\mu}m$ to a few mm. In this paper, finite element formulation which assemble crystal plasticity theory considering texture development with damage mechanics is developed, since orientation development and growth of micro voids became the primary factors for deformation aspects in large deformation of milli structure. Applying to, extremely, extrusion process of single crystal and extrusion/drawing process of polycrystal milli-size bar, extrusion force, preferred orientation, and damage evolution are examined to understand the characteristics of deformation of milii-size bar.

• Corrosion Science and Technology
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• v.3 no.3
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• pp.102-106
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• 2004

Al foil used was 99.9 and 99.99 %. Test solution used was NaCl solution. The noise was determined using controlled potential electrolysis at -200 and -700 mV vs. NHE. The current fluctuation was caused by breakdown and repaired process of aluminum oxide film. The current fluctuation value of noise was proportion to degree of growth. The number of noise was proportion to the number of pit. The examining of current flutulation value and number of noise could be evaluated corrosion. A 99.99 % Al foil was the mostly crystal of {100} plane, and showed three-dimensional, as azimuth pit with along the direction of this place piled up. A 99.9 % Al foil was polycrystal, and in order of (311) >(222) >(200) >(111) plane. The azimuth pit did not occurred as the dissolution was occurred from each plane.