• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.36-36
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• 2010

Low-pressure fluorocarbon plasmas are widely used in microelectronics fabrication for a variety of surface modification purposes. In particular, fluorocarbon plasmas are used for the etching of dielectrics such as silicon dioxide and silicon nitride. Among the various fluorocarbons, this study focuses on C4F6 molecules (C4F6s) which are composed of hexafluorocyclobutene (c-C4F6), hexafluoro-1, 3-butadiene (1, 3-C4F6), and hexafluoro-2-butyne (2-C4F6). We have investigated the dissociation reactions of C4F6s, resulting in CF2, CF3, C2F3, and C3F3 fragments, by using the wB97X-D functional with various basis sets. In this presentation, the geometrical properties, energetics, and dissociation mechanisms of C4F6s will be suggested.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.860-863
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• 2002

In this study, Ag thin films deposited on LCD-grade glass were etched using inductively coupled fluorine-based plasmas and the effect of various $CF_4$-based gas mixtures on the Ag etching characteristics were studied. When $CF_4$-based gas mixtures were used with $N_2$, due to the very low vapor pressure of etch products, etch products remained on the substrate after the etching. However, when $CF_4$ used with Ar, residue-free Ag etching could be obtained due to the removal of etch product by sputtering by $Ar^+$ ions.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.54 no.11
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• pp.527-532
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• 2005

During the last ten years the new interruption techniques, which use the arc energy itself to increase the pressure inside a chamber by the PTFE nozzle ablation, have displaced the puffer circuit breakers due to reduced driving forces and better maintainability. In this paper, we have investigated the thermal flow characteristics inside a thermal puffer type gas circuit breaker by solving the Wavier-Stokes equations coupled with Maxwell's equations for considering all instabilities effects such as turbulence and Lorentz forces by transient arc plasmas. These relative inexpensive computer simulations might help the engineer research and design the new interrupter in order to downscale and uprating the GIS integral.

• Journal of Astronomy and Space Sciences
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• v.17 no.2
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• pp.233-240
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• 2000

Five scientific instruments are planned on KAISTSAT-4 that is scheduled to be launched in 2002. A far ultra-violet imaging spectrograph and a set of space plasma instruments are currently being designed. The imaging spectrograph will make observations of astronomical objects and Earth's upper atmosphere. The plasma instrumentation is capable of fast measuring the thermal magnetosphere plasmas, cold ionospheric plasmas and the Earth's magnetic fields. Major system drivers and constraints on the payloads as well as the spacecraft are identified. A preliminary analysis of the K-4 mission has been undertaken with the system requirements that are derived from the system drivers. Detailed investigation shows that Sun-synchronous orbits with approximate altitudes of 800km are optimal to satisfy the identified requirements. Comparisons with other orbits of different inclinations are also shown. Four operation modes and a daily schedule of spacecraft maneuver are found from the Sun-synchronous orbital model. It is shown that the scientific objectives of K-4 can be achieved with moderate levels of design and operation risks.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.499-499
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• 2012

This study was evaluated on etcher of capacitive coupled plasmas with OES (Optical Emission Spectroscopy) and impedance by VI probe that are widely used for process control and monitoring at semiconductor industry. The experiment was operated at conventional Ar and C4F8 plasma with variable change such as pressure and addition of gas (Atmospheric Leak: N2 and O2), RF, pressure, that are highly possible to impact wafer yield during wafer process, in order to observe OES and VI Probe signals. The sensitivity change on OES and Impedance by Vi probe was analyzed by statistical method to determine healthy of process. The main goal of this study is to understand unwanted tool performance to eventually improve productive capability. It is important for process engineers to actively adjust tool parameter before any serious problem occurs.

• Journal of the Korean institute of surface engineering
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• v.32 no.4
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• pp.513-520
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• 1999

In this study, we investigated the effects of variously configured magnets on the characteristics of the plasmas to enhance plasma uniformity and density of an inductively coupled plasma source. As the magnets, Helmholtz type axial electromagnets and various multi-dipole magnets types around the chamber wall were used. To characterize the plasma as a function of the combination of the magnets and magnetic field strengths, ion density, electron temperature, and plasma potential were measured using an electrostatic probe along the chamber diameter for Ar plasmas. The measured maximum ion densities were $8$\times$10^{ 11}$$cm^{-3}$ with 600W inductive power and at 5mTorr of operational pressure and the uniformity of ion density was less than 5.9% at 2mTorr of operational pressure. The combination of an optimized multi-dipole magnet type and an axial electromagnet showed the lowest electron temperature (3eV) and plasma potential ($34V{p}$ )

• Particle and aerosol research
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• v.5 no.3
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• pp.95-109
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• 2009

A low temperature plasma process has been widely used for semiconductor fabrication and can also be applied for the preparation of solar cell, MEMS or NEMS, but they are notorious in the point of particle contamination. The nano-sized particles can be generated in the low temperature plasma process and they can induce several serious defects on the performance and quality of microelectronic devices and also on the cost of final products. For the preparation of high quality thin films of high efficiency by the low temperature plasma process, it is desirable to increase the deposition rate of thin films with reducing the particle contamination in the plasmas. In this paper, we introduced the studies on the generation and growth of nanoparticles in the low temperature plasmas and tried to introduce the recent interesting studies on nanoparticle generation in the plasma reactors.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.521-521
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• 2013

Collective Thomson scattering (CTS) system is being developed in KAERI based on high power gyrotrons. CTS is a promising diagnostic method to measure fast ion distributions and potentially the fusion product alpha particles in magnetically confined plasmas. By utilizing millimeter-waves from high power gyrotrons as a probing beam, spatially and temporally resolved 1-D ion velocity distributions can be obtained from the scattered radiation with less scattering geometrical constraints. The pulse modulation of gyrotrons enables to separate scattering signal from ECE background noises. The feasibility was assessed with the calculation of spectral density functions under the condition of KSTAR plasmas. Further CTS system requirements are also discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.579-579
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• 2013

We study on Argon metastable and 4p state neutral atom density in magnetized ICP Helicon plasmas by Laser Induced Fluorescence and plasma emission. The results show that metastable density is too low at the center of chamber due to significant neutral depletion. Otherwise, 4p state is high at the center of chamber because electron density is very high. Power and pressure dependence of metastable and 4p state neutral atom have been spatially measured in the radial direction of cylindrical chamber.

• Journal of Industrial Technology
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• v.25 no.A
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• pp.141-149
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• 2005

We investigated numerically the evolutions of several chemical species which are important for film growth and particle generation in the pulsed $SiH_4$ plasmas. During the plasma-on, the $SiH_x$ concentration increases with time mainly by the generation reaction from $SiH_4$, but, during the plasma-off, decreases because of the hydrogen adsorption reaction. During the plasma-on, the concentrations of negative ions increase with time by the polymerization reactions of negative ions and those become almost zero in the sheath regions because of the electrostatic repulsion. During the plasma-off, the concentrations of negative ions decrease with time by the neutralization reactions with positive ions and some negative ions can diffuse toward the sheath regions because there is no electric field inside the reactor. The polymerized negative ions of higher mass can be reduced successfully by using the pulsed plasma process.