• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1270_1271
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• 2009

In this research, gallium-incorporated zinc oxide (ZnO:Ga) thin films have been used as a coating material for enhancing the field-emission property of CNT-emitters. Multi-walled CNTs were directly grown on conical-type ($250{\mu}m$ in diameter) metal-tip substrates at $700^{\circ}C$ by inductively coupled plasma-chemical vapor deposition (ICP-CVD). The pulsed laser deposition (PLD) technique was used to produce 5wt% gallium-doped ZnO (5GZO) films with very low stress. The structural properties of ZnO and 5GZO coated CNTs were characterized by Raman spectroscopy. Field emission scanning electron microscopy (FESEM) and high-resolution transmission electron microscopy (HRTEM) were also used to monitor the variation in the morphology and microstructure of CNTs before and after 5GZO-coating. The measurement of the field emission characteristics showed that the emitter that coated the 5GZO (10nm) on CNTs exhibited the best performance: a maximum emission current of $325{\mu}A$, a threshold field of 2.2 V/${\mu}m$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.439-440
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• 2008

Indium Zinc Tin Oxide (IZTO) thin films for transparent thin film transistor (TTFT) were deposited on glass substrate at room temperature by facing targets sputtering (FTS). The FTS system was designed to array two targets facing each other and forms the high- density plasma between. Two different kinds of targets were installed on FTS system. One is ITO ($In_2O_3$ 90wt.%, $SnO_2$ 10wt.%), the other is IZO($In_2O_3$ 90wt%, ZnO 10wt%). The conductive and optical properties of IZTO thin film is determined depending on variation of DC power and working pressure. Therefore, IZTO thin films were prepared with different DC power and working pressure. As-deposited IZTO thin films were investigated by a UV/VIS spectrometer, an X-ray diffractometer (XRD), a scanning electron microscopy (SEM), a Hall Effect measurement system. As a result, all IZTO thin films deposited on glass substrate showed over 80% of transmittance in visible range (400~800 nm) at $O_2$ gas flow rate. We could obtain IZTO thin films with the lowest resistivity $5.67\times10^{-4}$ [$\Omega{\cdot}cm$] at $O_2$ gas flow rate 0.4 [sccm).

• Journal of Information Display
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• v.12 no.1
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• pp.47-50
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• 2011

Highly stable amorphous indium.gallium.zinc-oxide (a-IGZO) thin-film transistors (TFTs) were fabricated with an etchstopper and via-hole structure. The TFTs exhibited 40 $cm^2$/V s field-effect mobility and a 0.21 V/dec gate voltage swing. Gate-bias stress induced a negligible threshold voltage shift (${\Delta}V_{th}$) at room temperature. The excellent stability is attribute to the via-hole and etch-stopper structure, in which, the source/drain metal contacts the active a-IGZO layer through two via holes (one on each side), resulting in minimized damage to the a-IGZO layer during the plasma etching of the source/drain metal. The comparison of the effects of the DC and AC stress on the performance of the TFTs at $60^{\circ}C$ showed that there was a smaller ${\Delta}V_{th}$ in the AC stress compared with the DC stress for the same effective stress time, indicating that the trappin of the carriers at the active layer-gate insulator interface was the dominant degradation mechanism.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.738-746
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• 2004

Recently zinc oxide(ZnO) has emerged as one of the most promising transparent conducting films with a strong demand of low cost and high performance optoelectronic devices, ZnO film has many advantages such as high chemical and mechanical stabilities, and abundance in nature. In this paper, in order to obtain the excellent transparent conducting film with low resistivity and high optical transmittance for Plasma Display Pannel(PDP), aluminium doped zinc oxide films were deposited on Corning glass substrate by dc magnetron sputtering method. The effects of the discharge power and doping amounts of $Al_2$$O_3$ on the electrical and optical properties were investigated experimentally. Particularly in order to lower the electrical resistivity, positive and negative bias voltages were applied on the substrate, and the effect of bias voltage on the electrical properties of ZnO:Al thin film were also studied and discussed. Films with lowest resistivity of $4.3 \times 10 ^{-4} \Omega-cm$ and good transmittance of 91.46 % have been achieved for the films deposited at 1 mtorr, $400^{\circ}C$, 40 W, Al content of 2 wt% with a substrate bias of +30 V for about 800 nm in film thickness.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.3
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• pp.177-182
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• 2013

Transparent thin film transistors (TTFT) were fabricated on $N^+$ Si wafers. $SiO_2$, $Si_3N_4/SiO_2$ and $Al_2O_3/SiO_2$ grown on the wafers were used as gate insulators. The rf magnetron sputtered zinc tin oxide (ZTO) films were adopted as active layers. $N^+$ Si wafers were wet-oxidized to grow $SiO_2$. $Si_3N_4$ and $Al_2O_3$ films were deposited on the $SiO_2$ by plasma enhanced chemical vapor deposition (PECVD) and atomic layer deposition (ALD), respectively. The mobility, $I_{on}/I_{off}$ and subthreshold swing (SS) were obtained from the transfer characteristics of TTFTs. The properties of gate insulators were analyzed by comparing the characteristics of TTFTs. The property variation of the ZTO TTFTs with time were observed.

• ALGAE
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• v.26 no.3
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• pp.265-275
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• 2011

This study examined the bioaccumulation of the heavy metals copper (Cu) and zinc (Zn) by the giant kelp, Macrocystis pyrifera, by exposing meristematic kelp tissue to elevated metal concentrations in seawater within laboratory aquaria. Specifically, we carried out two different experiments. The first examined metal uptake under a single, ecologically-relevant elevation of each metal (30 ppb Cu and 100 ppb Zn), and the second examined the relationships between varying levels of the metals (i.e., 15, 39, 60, 120, 240, and 480 ppb Cu, and 50, 100, 200, 300, 500, and 600 ppb Zn). Both experiments were designed to contrast the uptake of the metals in isolation (i.e., when only one metal concentration was elevated) and in combination (i.e., when both metals' concentrations were elevated). Following three days of exposure to the elevated metal concentrations, we collected and analyzed the M. pyrifera tissues using inductively coupled plasma atomic emissions spectroscopy. Our results indicated that M. pyrifera bioaccumulated Cu in all treatments where Cu concentrations in the seawater were elevated, regardless of whether Zn concentrations were also elevated. Similarly, M. pyrifera bioaccumulated Zn in treatments where seawater Zn concentrations were elevated, but this occurred only when we increased Zn alone, and not when we simultaneously increased Cu concentrations. This suggests that elevated Cu concentrations inhibit Zn uptake, but not vice versa. Following this, our second experiment examined the relationships among varying seawater Cu and Zn concentrations and their bioaccumulation by M. pyrifera. Here, our results indicated that, as their concentrations in the seawater rise, Cu and Zn uptake by M. pyrifera tissue also rises. As with the first experiment, the presence of elevated Zn in the water did not appear to affect Cu uptake at any concentration examined. However, although it was not statistically significant, we observed that the presence of elevated Cu in seawater appeared to trend toward inhibiting Zn uptake, especially at higher levels of the metals. This study suggests that M. pyrifera may be useful as a bio-indicator species for monitoring heavy metal pollution in coastal environments.

• Proceedings of the KWS Conference
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• 2009.11a
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• pp.95-95
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• 2009

Zinc coatings provide the most effective and economical way of protecting steel against corrosion. There are three types of galvanizing lines typically used in production line in galvanizing industries,Galvanize (GI) coating (Zn-0.1-0.3%Al), Galfan coating (Zn-5%Al), Galvalume(GL) coating (45%Zn-Al). In continuous Galvanizing lines, the immersed bath hardware (e.g. bearings, sink, stabilizer, and corrector rolls, and also support roll arms and snout tip) are subjected to corrosion and wear failure. Understanding the reaction of these materials with the molten Zn alloy is becomes scientific and commercial interest. To investigate the reaction with molten Zn alloys, static immersion test performed for 4, 8, 16, and 24 Hr. Two different baths used for the static immersion, which are molten Zn and molten Zn-55%Al. Microstructures characterization of each of the materials and intermetallic layer formed in the reaction zone was performed using optical microscope, SEM and EDS. The thickness of the reaction layer is examined using image analysis to determine the kinetics of the reaction. The phase dominated by two distinct phase which are eutectic carbide and matrix. The morphology of the intermetallic phase formed by molten Zn is discrete phase showing high dissolution of the material, and the intermetallic phase formed by Zn-55wt%Al is continuous. Aluminum reacts readily with the materials compare to Zinc, forming iron aluminide intermetallic layer ($Fe_2Al_5$) at the interface and leaving zinc behind.

• Journal of the Korean Dietetic Association
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• v.29 no.2
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• pp.73-85
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• 2023

This study examined the nutritional information using the nutrition labels of gimbap sold at convenience stores and evaluated nutritional adequacy compared to dietary reference intakes for Korean adolescents. Thirty gimbaps (triangular gimbaps and regular gimbaps according to the main ingredients of vegetables, fish, and meat) were purchased at five convenience stores of different brands with many stores in Korea. The food and nutrition labels of the gimbaps were investigated, and nine minerals were analyzed using inductively coupled plasma-mass spectrometry (ICP-MS). The average price of gimbap was 1,906.7 won, and average energy was 292.0 kcal, and the protein content was 15.5% of the recommended intake for Korean male adolescents aged 15~18 years. The mineral content ranged from 6.9% for zinc to 39.0% for selenium. Except for sodium and selenium, the energy, protein, and mineral content did not meet 1/3 of dietary reference intakes for adolescents. For the index of nutritional quality (INQ), calcium and zinc were the lowest in the triangular and regular gimbap, respectively. The INQ of potassium was significantly higher in triangular gimbap with vegetables. The content and INQ of selenium were in regular gimbap with fish, and the zinc INQ was in regular gimbap with meat. Overall, gimbap sold in convenience stores has a high sodium content, and the contents of energy, protein, and minerals, except selenium, are insufficient for a single meal.

• Clinical and Experimental Reproductive Medicine
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• v.51 no.1
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• pp.20-27
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• 2024

Objective: While sperm freezing (cryopreservation) is an effective method for preserving fertility, it can potentially harm the structure and function of sperm due to an increase in the production of reactive oxygen species. This study aimed to assess the impact of zinc oxide nanoparticles (ZnONPs) and selenium oxide nanoparticles (SeONPs) on various sperm functional parameters, including motility, plasma membrane integrity (PMI), mitochondrial membrane potential (MMP), acrosome membrane integrity (ACi), and malondialdehyde (MDA) levels. Methods: Semen samples were collected from 20 Albino Wistar rats. These samples were then divided into six groups: fresh, cryopreservation control, and groups supplemented with SeONPs (1, 2, 5 ㎍/mL) and ZnONPs (0.1, 1, 10 ㎍/mL). Results: Statistical analysis revealed that all concentrations of SeONPs increased total motility and progressive reduction of MDA levels compared to the cryopreservation control group (p<0.05). However, supplementation with ZnONPs did not affect these parameters (p>0.05). Conversely, supplements of 1 and 2 ㎍/mL SeONPs and 1 ㎍/mL ZnONPs contributed to the improvement of PMI and ACi (p<0.05). Yet, no significant change was observed in MMP with any concentration of SeONPs and ZnONPs compared to the cryopreservation control group (p>0.05). Conclusion: The findings suggest that optimal concentrations of SeONPs may enhance sperm parameters during the freezing process.

• Korean Journal of Materials Research
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• v.20 no.4
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• pp.175-180
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• 2010

Transparent conducting oxide (TCO) films are widely used for optoelectronic applications. Among TCO materials, zinc oxide (ZnO) has been studied extensively for its high optical transmission and electrical conduction. In this study, the effects of $O_2$ plasma pretreatment on the properties of Ga-doped ZnO films (GZO) on polyethylene naphthalate (PEN) substrate were studied. The $O_2$ plasma pretreatment process was used instead of conventional oxide buffer layers. The $O_2$ plasma treatment process has several merits compared with the oxide buffer layer treatment, especially on a mass production scale. In this process, an additional sputtering system for oxide composition is not needed and the plasma treatment process is easily adopted as an in-line process. GZO films were fabricated by RF magnetron sputtering process. To improve surface energy and adhesion between the PEN substrate and the GZO film, the $O_2$ plasma pre-treatment process was used prior to GZO sputtering. As the RF power and the treatment time increased, the contact angle decreased and the RMS surface roughness increased significantly. It is believed that the surface energy and adhesive force of the polymer surfaces increased with the $O_2$ plasma treatment and that the crystallinity and grain size of the GZO films increased. When the RF power was 100W and the treatment time was 120 sec in the $O_2$ plasma pretreatment process, the resistivity of the GZO films on the PEN substrate was $1.05\;{\times}\;10^{-3}{\Omega}-cm$, which is an appropriate range for most optoelectronic applications.