• ETRI Journal
• /
• v.21 no.3
• /
• pp.16-21
• /
• 1999

After etching Al-Cu alloy films using SiCl4/Cl_2/He/CHF3 mixed gas plasma, the corrosion phenomenon at the grain boundary of the etched surface and a passivation layer on the etched surface with an SF6 plasma treatment subsequent to the etching were studied. In Al-Cu alloy system, corrosion occurs rapidly on the etched surface by residual chlorine atoms, and it occurs dominantly at the grain boundaries rather than the crystalline surfaces. To prevent corrosion, the SF6 gas plasma treatment subsequent to etching was carried out. The passivation layer is composed of fluorine-related compounds on the etched Al-Cu surface after the SF6 treatment, and it suppresses effectively corrosion on the surface as the SF6 treatment pressure increases. Corrosion could be suppressed successfully with the SF6 treatment at a total pressure of 300 mTorr. To investigate the reason why corrosion could be suppressed with the SF6 treatment, behaviors of chlorine and fluorine were studied by various analysis techniques. It was also found that the residual chlorine incorporated at the grain boundary of the etched surface accelerated corrosion and could not be removed after the SF6 plasma treatment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.5
• /
• pp.401-409
• /
• 2013

Numerical analysis on RF (Radio-Frequency) thermal plasma treatment of micro-sized Ni metal was carried out to understand the synthesis mechanism of nano-sized Ni powder by RF thermal plasma. For this purpose, the behaviors of Ni metal particles injected into RF plasma torch were investigated according to their diameters ($1{\sim}100{\mu}m$), RF input power (6 ~ 12 kW) and the flow rates of carrier gases (2 and 5 slpm). From the numerical results, it is predicted firstly that the velocities of carrier gases need to be minimized because the strong injection of carrier gas can cool down the central column of RF thermal plasma significantly, which is used as a main path for RF thermal plasma treatment of micro-sized Ni metal. In addition, the residence time of the injected particles in the high temperature region of RF thermal plasma is found to be also reduced in proportion to the flow rate of the carrier gas In spite of these effects of carrier gas velocities, however, calculation results show that a Ni metal particle even with the diameter of $100{\mu}m$ can be completely evaporated at relatively low power level of 10 kW during its flight of RF thermal plasma torch (< 10 ms) due to the relatively low melting point and high thermal conductivity. Based on these observations, nano-sized Ni metal powders are expected to be produced efficiently by a simple treatment of micro-sized Ni metal using RF thermal plasmas.

• Journal of the Korean Society of Clothing and Textiles
• /
• v.36 no.10
• /
• pp.1117-1124
• /
• 2012

This study was a preliminary study to investigate the influence of surface morphology and characteristics on the self-cleaning of substrates. PI film was treated by $O_2$ plasma to modify the surface; in addition, AFM and Fe-SEM were employed to examine the morphological changes induced on a PI film treated by $O_2$ plasma and surface energies calculated from measured contact angles between several solutions and PI film based on the geometric mean and a Lewis acid base method. The surface roughness of PI film treated by $O_2$ plasma increased with the duration of the $O_2$ plasma on PI film due to the increased surface etching. The contact angle of film treated by $O_2$ plasma decreased with the increased treatment time in water and surfactant solution; in addition, the surface energy increased with the increased treatment times largely attributed to the increased portion on the polar surface energy of PI film. The coefficient of the correlation between surface roughness and surface polarity such as contact angle and surface energy was below 0.35; however, it was over 0.99 for the contact angle and surface energy.

• Proceedings of the KIEE Conference
• /
• 2011.07a
• /
• pp.1489-1490
• /
• 2011

The $O_2$ plasma treatment is used as improvement of ITO roughness glass for organic light-emitting diodes and organic photovoltaic cells. This study examined the effect of the electrical properties of OLED according to variation of $O_2$ plasma power. In experiment, we found that the electrical characteristics of device are excellent when the power of $O_2$ plasma is 250 W. And when the power of $O_2$ plasma increases over 250 W, the electrical properties were getting worse. $O_2$ plasma treatment not only prevents the diffusion of indium, a metal constituent, to an organic layer but also plays a significant role as improvement of ITO roughness. By considering organic light-emitting diodes treating $O_2$ plasma, it could contribute to the improvement of the efficiency of the device.

• Elastomers and Composites
• /
• v.35 no.4
• /
• pp.296-302
• /
• 2000

The surfaces of injection and pressure-molded sheets of poly(ethylene-covulylacetate)(EVA) foams used for shoe mid-sole were treated with low temperature plasma to improve adhesion with a water-based polyurethane adhesives. Several experimental variables were considered, such as radio frequency power, treating time, type of gas. gas flow, and distance between electrode and sample. The modificated surface by plasma treatment were characterized using contact angle meter, scanning electron microscopy(SEM), universal testing machine(UTM). Adhesion was tested by T-peel tests of treated EVA foams/polyurethane adhesive joints. The treatment in the low temperature plasma produced a noticeable decrease in contact angle. The peel strength of EVA foams treated with plasma was increased with plasma treating time, and gas flow.

• Proceedings of the KIEE Conference
• /
• 2002.11a
• /
• pp.209-211
• /
• 2002

A simple-structured thermal plasma generator for waste gas treatment has been studied. The thermal plasma technology applied to waste treatment has undoubtedly gained high importance owing to its outstanding properties such as flexibility, compact reactor, and clean treatment. Moreover, the thermal plasma generated by ac power has some additional advantages such as simple electrode system and easy maintenance. A prototype 200kW class plasma generator with specifications of 10-30m/sec gas velocity and 3000-5000K temperature on the center just outside of the nozzle has been designed and tested. Case studies on heat transfer, heat flow, velocity distribution, and temperature distribution using a commercial simulation package show lots of flexibility in design. The experimental results from theprototype generator show that the ac thermal plasma is easily controlled by working gas flow once it is ignited. A stabilization condition is discussed with the data from monitoring arc voltage drops with respect to gas flow rate during the test.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.3
• /
• pp.173-176
• /
• 2011

The characteristic changes in ZnO thin film according to H- and O- plasma treatments have been studied by Photoluminescence (PL) spectroscopy at room temperature. The red shift of UV peak by 20-30 meV in PL spectra after plasma treatments is identified, which indicates that there are changes in the binding energy of bound exciton and/or the movement of energy levels of lattice defects and impurities. The width of UV peak is decreased after plasma treatments, which is believed to be closely related to the crystal quality of ZnO film. The increase of UV peak intensity after H-plasma treatment is also observed, and this could mean that the radiative recombination is strengthened because the hydrogen atoms in the plasma diffuse into the film where they passivate and neutralize the defects and the impurities.

• Journal of the Optical Society of Korea
• /
• v.17 no.6
• /
• pp.543-547
• /
• 2013

A temperature dependent (10K-290K) photoluminescence (PL) study for two differently prepared ZnO thin films (as-grown and O-plasma treated) is presented. Four characteristic peaks were identified for both samples: (i) neutral donor-bound excitons ($D^oX$), (ii) two electron satellites (TES), (iii) phonon replica of $D^oX$ ($D^oX$-1LO), and (iv) donor-acceptor pair transition (DAP). As the sample temperature increased, $D^oX$-1LO and DAP transitions became indistinct. This was accompanied by newly-rising emission of free electron-acceptor transitions (e, $A^o$). The spectral evolution with temperature for as-grown samples also showed the optical emission from free excitons, which became dominant at higher temperatures. Some features related to O-plasma were identified in PL spectra: (i) different positions of TES transitions (28meV lower than $D^oX$ for as-grown samples and 35meV for O-plasma treated samples), (ii) the decrease of spectral intensity in both emissions of $D^oX$ and DAP after O-plasma treatment, and (iii) no noticeable transition from free excitons after the O-plasma treatment.

• Proceedings of the Membrane Society of Korea Conference
• /
• 2001.11a
• /
• pp.83-86
• /
• 2001

• Journal of the Korean Society for Heat Treatment
• /
• v.16 no.4
• /
• pp.224-231
• /
• 2003