• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2006년도 심포지엄 논문집 정보 및 제어부문
• /
• pp.138-140
• /
• 2006

A new diagnosis model was constructed by combining atomic force microscopy (AFM), wavelet, and neural network. Plasma faults were characterized by filtering AFM-measured etch surface roughness with wavelet. The presented technique was evaluated with the data collected during the etching of silicon oxynitride thin film. A total of 17 etch experiments were conducted. Applying wavelet to AFM, surface roughness was detailed into vertical, horizon%at, and diagonal components. For each component, neural network recognition models were constructed and evaluated. Comparisons revealed that the vertical component-based model yielded about 30% improvement in the recognition accuracy over others. The presented technique was evaluated with the data collected during the etching of silicon oxynitride thin film. A total of 17 etch experiments were conducted

• 한국표면공학회지
• /
• 제23권1호
• /
• pp.1-7
• /
• 1990

Ion implantation is a well established superior superior surface modification technique for the improvement of wear resistance, hardenece, hardness, corrosion resistance, biocompaibity, surface friction, as well as for the modification of surface electric conductance. Conventional ion implantaion is a line-of-sight process witch ues the ion beam accelerator techniques. Plasma sheath ion implantation (PSII), as a new technique, is described in this paper. In PSII high voltage pulse is applied to a target material placed directly in a plasma, forming a think ion-matrix sheath around the target. Ions accelerate through the sheath drop and bombard the traget from all sides simultaneosuslyregardless of the target shape. This paper describes the principle of PSII, which has non-line-of sight characteristics, as well as the experimental appratus.

• 공업화학
• /
• 제25권4호
• /
• pp.341-345
• /
• 2014

아크플라즈마를 이용해 촉매입자를 촉매지지체에 건식으로 직접 분산하는 기술에 대한 개괄과 응용사례를 소개한다. 이 방법은 촉매입자를 담지하는 일반적인 방법인 습식법의 단점을 개선하고자 촉매입자를 기화하여 직접 담지체에 증착하는 방법이다. 아크플라즈마 증착을 이용해 제작한 촉매재료의 성능을 연구한 사례 세가지를 소개한다. 이 사례들을 통해 이 방법으로 증착되는 나노입자의 크기가 1~5 nm 정도이고 일반적으로 습식 방법보다 촉매성능면에서 우수한 성능을 나타낸다는 것을 보인다.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
• /
• 제54권9호
• /
• pp.450-453
• /
• 2005

A high speed address recovery technique for AC plasma display panel(PDP) is proposed. Replacing GND switch by clamping diode. the recovery speed can be increased by saving GND hold-time and switching loss due to GND switch also becomes also be reduced. The proposed method is able to perform load-adaptive operation by controlling the voltage level of energy recovery capacitor, which prevents increasing inefficient power consumption caused by circuit loss during recovery operation. Test results with 50' HD single-scan PDP(resolution = 1366$\times$768) show that less than 3sons of recovery time is successfully accomplished and about$54\%$ of the maximum power consumption can be reduced, tracing minimum power consumption curves.

• Journal of Korean Vacuum Science & Technology
• /
• 제3권2호
• /
• pp.116-120
• /
• 1999

Possible role of hydrogen atoms on the formation of microcrystalline silicon films was schematically investigated using a plasma enhanced chemical vapor deposition system. A layer-by-layer technique that can alternate deposition of ${\alpha}$-Si thin film and then exposure of H2 plasma was used for this end. The experimental process was extensively carried out under different hydrogen plasma times (t2) at a fixed number of 20 cycles in the deposition. structural properties, such as crystalline volume fractions and grain shapes were analyzed by using a Raman spectroscopy and a scanning electron microscopy. Electrical transports were characterized by the temperature dependence of the dark conductivity that gives rise to the calculation of activation energy (Ea). Optical absorption was measured using an ultra violet spectrophotometer, resulting in the optical energy gap (Eopt). Our experimental results indicate that both of the hydrogen etching and the structural relaxation effects on the film surface seem to be responsible for the growth mechanism of the crystallites in the ${\mu}$c-si films.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
• /
• pp.142.2-142.2
• /
• 2015

Plasma etch endpoint detection (EPD) of SiO2 and PR layer is demonstrated by plasma impedance monitoring in this work. Plasma etching process is the core process for making fine pattern devices in semiconductor fabrication, and the etching endpoint detection is one of the essential FDC (Fault Detection and Classification) for yield management and mass production. In general, Optical emission spectrocopy (OES) has been used to detect endpoint because OES can be a simple, non-invasive and real-time plasma monitoring tool. In OES, the trend of a few sensitive wavelengths is traced. However, in case of small-open area etch endpoint detection (ex. contact etch), it is at the boundary of the detection limit because of weak signal intensities of reaction reactants and products. Furthemore, the various materials covering the wafer such as photoresist (PR), dielectric materials, and metals make the analysis of OES signals complicated. In this study, full spectra of optical emission signals were collected and the data were analyzed by a data-mining approach, modified K-means cluster analysis. The K-means cluster analysis is modified suitably to analyze a thousand of wavelength variables from OES. This technique can improve the sensitivity of EPD for small area oxide layer etching processes: about 1.0 % oxide area. This technique is expected to be applied to various plasma monitoring applications including fault detections as well as EPD.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
• /
• pp.132-132
• /
• 2015

Virtual metrology (VM) model based on plasma information (PI) parameter for C4F8 plasma-assisted oxide etching processes is developed to predict and monitor the process results such as an etching rate with improved performance. To apply fault detection and classification (FDC) or advanced process control (APC) models on to the real mass production lines efficiently, high performance VM model is certainly required and principal component regression (PCR) is preferred technique for VM modeling despite this method requires many number of data set to obtain statistically guaranteed accuracy. In this study, as an effective method to include the 'good information' representing parameter into the VM model, PI parameters are introduced and applied for the etch rate prediction. By the adoption of PI parameters of b-, q-factors and surface passivation parameters as PCs into the PCR based VM model, information about the reactions in the plasma volume, surface, and sheath regions can be efficiently included into the VM model; thus, the performance of VM is secured even for insufficient data set provided cases. For mass production data of 350 wafers, developed PI based VM (PI-VM) model was satisfied required prediction accuracy of industry in C4F8 plasma-assisted oxide etching process.

• Korean Chemical Engineering Research
• /
• 제44권5호
• /
• pp.483-488
• /
• 2006

유기고분자에 대한 건식 식각공정으로 remote 플라즈마를 이용하여 유리 표면에 도포된 PMMA의 식각공정에 관한 연구로 플라즈마 출력, 반응가스, 플라즈마 발생원과의 거리에 대한 식각특성을 측정하였다. 플라즈마 발생원으로부터 멀어질수록 플라즈마에 의해 발생된 라디칼 밀도로 인해 PMMA 식각속도가 감소하였다. 플라즈마 내에서 발생된 라디칼에 의해 PMMA가 제거되며, 플라즈마 출력이 증가할수록 PMMA 표면과 반응하는 라디칼 증가로 식각속도는 선형적으로 증가하였다. 식각 기체에서 산소의 양이 증가함에 따라 식각속도 증가와 더불어 식각표면의 거칠기도 증가함을 알 수 있었다.

• Journal of Advanced Marine Engineering and Technology
• /
• 제40권10호
• /
• pp.929-934
• /
• 2016

Plasma technology has long been regarded as a key essential tool in many industrial and technological sectors. However, the advancement of plasma technology in marine applications has not been fully realized yet. Herein, we present a short overview on the recent trends in utilization of plasma technology for air-pollution treatment in marine diesel exhaust. Four non-thermal plasma system, including electron beam dry scrubber (EBDS), dielectric barrier discharge (DBD), electron beam-microwave (EB-MW) plasma hybrid system, and plasma-catalytic hybrid system, are described with emphasis on their efficiency in removals of $NO_x$ and $SO_x$ gases. Non-thermal plasma has the great potential to be an efficient and environmentally compatible technique in simultaneous removals of $NO_x$ and $SO_x$ gases from the exhaust of marine diesel engine in the future.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2012년도 춘계학술대회 논문집
• /
• pp.885-886
• /
• 2012