• 제목/요약/키워드: plasma sheet

검색결과 170건 처리시간 0.025초

Electromagnetic interference(EMI) shielding efficiency(SE) charhcteristics of IMI multilayer/PMMA structure for plasma display panel(PDP) filter.

  • Lee, Jung-Hyun;Sohn, Sang-Ho;Cho, Yong;Lee, Sang-Gul
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.872-876
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    • 2006
  • This study was made to examine the electromagnetic interference(EMI) shielding effect (SE) of multilayered thin films in which indium-tin oxide(ITO) and Ag were deposited alternately from 3layer to 9 layer on Poly Methyl Meth Acrylate(PMMA) substrate at room temperature using a PF sputtering. We measured optical and electrical characteristics by UV-spectrometer and 4 point probe. The measurement of EMI SE in frequency range from 50MHz to 1.5GHz was performed by using ASTM D4935-89 method. We compared the measured EMI SEs with theoretical simulation data. We obtained relatively low resistivity and high transmittance from the EMI SE multilayers. In this study, we obtain good optical electrical characteristics with a minimun transmittance of about 60% at 550nm wavelength and sheet resistance of $2{\sim}3ohm/sq$., respectivity. Measured EMI SEs were over 50dB and similar to theoretical simulation data.

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Electroforming을 이용한 PDP용 EMI 메시 개발 (EMI Mesh Development for the PDP using Electroforming)

  • 권혁홍;범민욱;임성룡;황춘섭;박동식;이태환
    • 한국생산제조학회지
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    • 제20권1호
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    • pp.108-113
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    • 2011
  • There are a lot of PDP TV for a plasma discharge pulse voltage generated by the use of electromagnetic waves. EMI mesh film is near Infrared ray caused by malfunction of the remote control intended to prevent this phenomenon. In this study, the formation of fine pattern by making the mold is imprinted on the film sheet. EMI mesh film has been granted by filling in the conductive material region imprinted with electroforming in the manufacture of resistance. The fine patterns fabricated with electroforming facility thickness of homogenization process technology were established to optimize the working conditions.

Preparation and characterization of high transmittance and low resistance index matched transparent conducting oxide coated glass for liquid crystal on silicon panel

  • Jang, Chang-Young;Paik, Woo-Sung;Choi, Bum-Ho;Kim, Young-Back;Lee, Jong-Ho
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.1415-1417
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    • 2009
  • High transmittance and low resistance index matched transparent conducting oxide (IMTCO) coated glass was prepared and characterized. IMTCO was deposited by RF magnetron sputtering with the thickness of 15nm and 90nm thick anti-reflection layer was evaporated. To modify surface to hydrophilic, in-situ plasma treatment was also performed. IMTCO coated glass exhibited 96.6% of transmittance in the wavelength range of 400~700nm which is relatively high value compared to commercially available IMTCO glass. The sheet resistance uniformity was measured to be 1.53%.

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어린이 제품에 함유된 유해 물질 관리 방안에 관한 연구 -학용품을 중심으로- (A Study on the Control of Harmful materials in Children's Goods -centering on school supplies-)

  • 곽순진;김광수
    • 대한안전경영과학회지
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    • 제19권1호
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    • pp.115-122
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    • 2017
  • This study analyzed that the standard of school supplies affects the satisfaction of certification. Safety requirements of school supplies in the Republic of Korea is enforced by court duty certification. Therefore, a test was conducted to compare the safety requirements of the United States and Europe and the survey was conducted to know how much manufacturers and importers are satisfied with the certification. To prepare management measures for harmful substances contained in children's product, XRF(X-ray Fluorescence Spectrometry) is utilized to analyze lead(Pb) and cadmium(Cd) in PA(paint), SP(sheet) and PVC(Poly Vinyl Chloride). The results of comparative analysis of ICP(inductively coupled plasma) is analyzed statistically with measured values.

Mutations in the Reactive Center Loop of $\alpha_1$-Antitrypsin That Retard the Loop Insertion

  • Maeng, Jin-Soo;Yu, Myeong-Hee
    • 한국생물물리학회:학술대회논문집
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    • 한국생물물리학회 1997년도 학술발표회
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    • pp.40-40
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    • 1997
  • $\alpha$$_1$- Antitrypsin is a key plasma serine protease inhibitor and its prime physiological role is an inhibitor of leukocyte elastase. The reactive center loop of $\alpha$$_1$-antitrypsin is characterized by the unusual mobility and the ability of insertion into the central $\beta$ sheet A. In particular the rate of loop insertion is considered to be critical for the formation of a stable complex between a serpin and its target protease.(omitted)

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방전가열형 구리증기레이저의 개발 (Development of the Discharge Heated Copper Vapor Laser)

  • 임창환;차병헌;성낙진;이종민
    • 한국광학회지
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    • 제1권1호
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    • pp.28-32
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    • 1990
  • 방전가열형 구리증기레이저를 제작하였으며 그 동작특성을 조사하였다. 레이저관으로는 내경 25mm, 길이 106cm 인 고순도(99.8%) 알루미나관을 이용하였다. 방전전극은 molybdenum 튜브로 제작하였으며 전극간의 거리는 108cm 이었다. Ne 가스압력 40mbar, 충전전압 10kV, 반복률 5KHz, 레이저관 내부온도 $1500^{\circ}C$일 때 평균출력 10W를 얻었다.

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전극봉의 와이어 체결 유무에 따른 자유 벌징 금형의 액중방전성형 실험을 통한 SUS430 소재의 성형성 비교 (Experimental Comparison of Electrohydraulic Forming of SUS430 with Free Bulging Die Depending on Wire of Electrodes)

  • 장윤호;김민석;김정
    • 소성∙가공
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    • 제32권6호
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    • pp.303-310
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    • 2023
  • Electrohydraulic forming(EHF), one of the high-speed forming method, can supplement the weak point of previous forming process such as deep-drawing and electromagnetic forming. Indeed, EHF is time-consuming process during installing wire before experiment that hard to apply to industry. In this research, applying wireless electrode, the formability of SUS430 sheet was compared through EHF experiments using wire-installed electrode and the other, wireless. Although the power was a little lacking, the advantages of the experiment using wireless electrode could be confirmed with checking the optimal location of electrodes where the plasma is generated and comparing free-bulging height depending on former and later condition of electrodes with performing several single and multistage experiments for same voltage, 6 kV.

Interface Control to get Higher Efficiency in a-Si:H Solar Cell

  • Han, Seung-Hee;Kim, En-Kyeom;Park, Won-Woong;Moon, Sun-Woo;Kim, Kyung-Hun;Kim, Sung-Min
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.193-193
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    • 2012
  • In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is the most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. Single-chamber PECVD system for a-Si:H solar cell manufacturing has the advantage of lower initial investment and maintenance cost for the equipment. However, in single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of single-chamber PECVD system. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. In order to remove the deposited B inside of the plasma chamber during p-layer deposition, a high RF power was applied right after p-layer deposition with SiH4 gas off, which is then followed by i-layer, n-layer, and Ag top-electrode deposition without vacuum break. In addition to the p-i interface control, various interface control techniques such as FTO-glass pre-annealing in O2 environment to further reduce sheet resistance of FTO-glass, thin layer of TiO2 deposition to prevent H2 plasma reduction of FTO layer, and hydrogen plasma treatment prior to n-layer deposition, etc. were developed. The best initial solar cell efficiency using single-chamber PECVD system of 10.5% for test cell area of 0.2 $cm^2$ could be achieved by adopting various interface control methods.

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${N_2}O$ 플라즈마에 의한 AlGaN/GaN HEMT의 누설전류 감소 (Reduction of gate leakage current for AlGaN/GaN HEMT by ${N_2}O$ plasma)

  • 양전욱
    • 전기전자학회논문지
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    • 제11권4호
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    • pp.152-157
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    • 2007
  • 본 연구에서는 AlGaN/GaN HEMT (High electron mobility transistor)를 제작하고 20 mTorr의 챔버 압력과 15 sccm의 ${N_2}O$ 유량, 40 W의 RF 전력의 조건으로 원거리에서 형성된 플라즈마로 소스와 드레인 영역을 10초${\sim}$120초 동안 처리하여 HEMT의 전기적 특성을 관찰하였다. 상온에서 ${N_2}O$ 플라즈마에 처리한 경우 HEMT의 특성이 변화하지 않았으나 $200^{\circ}C$의 온도에서 10초 동안 처리한 경우 게이트 길이가 1um, 소스와 드레인 사이의 거리가 4um인 HEMT의 게이트 누설전류가 246 nA로부터 1.2 pA로 크게 감소하였다. 또한 25 um 떨어진 200um 폭의 두 활성층 사이 누설전류가 3 uA로부터 7 nA로 감소하였으며 720 ${\Omega}/{\box}$의 활성층의 면저항을 608 ${\Omega}/{\box}$로 감소시켜 도전율의 증가를 나타내기도 하였다. ${N_2}O$ 플라즈마의 처리에 의한 전기적 특성 개선은 10초 이내의 짧은 시간 동안 이루어지며 더 이상의 처리는 누설전류 특성 개선에 도움이 되지 않았다. 또한 ${N_2}O$ 플라즈마 처리로 개선된 특성은 $SiO_2$의 증착과 식각 후에도 개선된 특성이 유지되었다. ${N_2}O$ 플라즈마의 처리는 트랜지스터의 트랜스컨덕턴스와 드레인 전류의 증가, 드레인 전류의 차단특성의 개선에도 기여하여 고품위의 AlGaN/GaN HEMT 제작에 효과적으로 이용될 수 있음이 확인되었다.

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ITO 투명전극의 $O_2$ 플라즈마 처리가 고분자 유기발광다이오드의 전기.광학적 특성에 미치는 영향 (Dependence of $O_2$ Plasma Treatment of ITO Electrode on Electrical and Optical Properties of Polymer Light Emitting Diodes)

  • 공수철;백인재;유재혁;임현승;양신혁;신상배;신익섭;장지근;장호정
    • 한국표면공학회지
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    • 제39권3호
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    • pp.93-97
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    • 2006
  • Polymer light emitting diodes (PLEDs) are expected to be commercialized as next generation displays by advantages of the fast response time, low driving voltage and easy manufacturing process for large sized flexible display. Generally, the electrical and optical properties of PLEDs are affected by the surface conditions of transparent electrode. The PLED devices with ITO/PEDOT:PSS/PVK/PFO-poss/LiF/Al structures were prepared by using the spin coating method. For this, PEDOT:PSS(poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)) Al 4083 and PVK(N-vinylcabozole) were used as hole injection and transport layers. The PFO-poss(poly(9,9-dioctylfluorene)) was used as the emitting layer. The dependence of $O_2$ plasma treatment of ITO electrode on the electrical and optical properties of PLEDs were investigated. The sheet resistances increased slightly with an improved surface roughness of ITO electrode as the RF power increased during $O_2$ plasma treatment. The PLED devices prepared on the ITO/Glass substrates, which were plasma-treated at 40 watt in RF power for 30 seconds under 40 mtorr $O_2$ pressure, showed the maximum external emission efficiency of 0.86 lm/W and the maximum luminance of $250\;cd/m^2$, respectively. The CIE color coordinates are ranged $X\;=\;0.13{\sim}0.18$ and $Y\;=\;0.10{\sim}0.16$, showing blue color. emission.