• Title/Summary/Keyword: plasma polymerization

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Adsorption of Co(II), Ni(II), Pb(II) and U(VI) from Aqueous Solutions using Polyaniline/Graphene Oxide Composites

  • Liu, Zhengjie;Yang, Jianwei;Li, Changzhen;Li, Jiaxing;Jiang, Yajuan;Dong, Yunhui;Li, Yueyun
    • Korean Chemical Engineering Research
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    • v.52 no.6
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    • pp.781-788
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    • 2014
  • Polyaniline modified graphene oxide (PANI/GO) composites were synthesized by dilute polymerization technique and were characterized by Fourier transformed infrared spectroscopy (FTIR), Raman spectroscopy, and scanning electron microscopy (SEM). The characterization results indicated that polyaniline molecules were successfully grafted on GO surfaces. The application of PANI/GO composites to the adsorption of heavy metals from aqueous solutions was investigated under ambient conditions. The maximum adsorption capacities of Co(II), Ni(II), Pb(II) and U(VI) ions on PANI/GO composites calculated from Langmuir models are 22.28, 25.67, 65.40 and 1552.31 mg/g, respectively. The excellent adsorption capacity suggests that PANI/GO composites can be applied as a promising adsorbent in heavy metal pollution cleanup in environmental pollution management.

Photo-grafting Dyeing of Wool Fabrics with ${\alpha}$-bromoacrylamide reactive dye (반응성 염료를 이용한 양모직물의 광그라프트 염색)

  • Dong, Yuanyuan;Jang, Jin-Ho
    • Proceedings of the Korean Society of Dyers and Finishers Conference
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    • 2011.03a
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    • pp.31-31
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    • 2011
  • Lanasol dyes containing ${\alpha}$-bromoacrylamide or ${\alpha},{\beta}$-dibromopropionylamide group are used for wool dyeing. They are normally applied to wool under pH 4.5 to 6.5 at $100^{\circ}C$. Although wool fabric can be dyed to obtain deep colour, high light and wet fastness, the dyeing processes need long dyeing time at high temperature, with salt addition, which inevitably causes environmental problems. Grafting is a modification method for textile where monomers are covalently bonded onto the polymer chain. It can be initiated by ozone, ${\gamma}$ rays, electron beams, plasma, corona discharge and UV irradiation. Coloration by UV-induced photografting exhibits several advantages such as fast reaction rate, energy saving, simple equipment, easy exploitation and environmentally friendliness. Also it requires much lower energy compared to the conventional dyeing and less damage to the substrate. In this study, a direct sequential UV-induced photografting onto wool fabrics was discussed. To understand the graft polymerization mechanism further, several characterization methods were used. Moreover, the effects of several principal factors on the graft photopolymerization were investigated. Furthermore, the colorfastness results were compared with conventional dyeing methods.

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Characteristics of Organic Thin Film Transistors with Organic and Organic-inorganic Hybrid Polymer Gate Dielectric (유기물과 유무기 혼합 폴리머 게이트 절연체를 사용한 유기 박막 트랜지스터의 특성)

  • Bae, In-Seob;Lim, Ha-Young;Cho, Su-Heon;Moon, Song-Hee;Choi, Won-Seok
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.12
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    • pp.1009-1013
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    • 2009
  • In this study, we have been synthesized the dielectric layer using pure organic and organic-inorganic hybrid precursor on flexible substrate for improving of the organic thin film transistors (OTFTs) and, design and fabrication of organic thin-film transistors (OTFTs) using small-molecule organic semiconductors with pentacene as the active layer with record device performance. In this work OTFT test structures fabricated on polymerized substrates were utilized to provide a convenient substrate, gate contact, and gate insulator for the processing and characterization of organic materials and their transistors. By an adhesion development between gate metal and PI substrate, a PI film was treated using $O_2$ and $N_2$ gas. The best peel strength of PI film is 109.07 gf/mm. Also, we have studied the electric characteristics of pentacene field-effect transistors with the polymer gate-dielectrics such as cyclohexane and hybrid (cyclohexane+TEOS). The transistors with cyclohexane gate-dielectric has higher field-effect mobility, $\mu_{FET}=0.84\;cm^2/v_s$, and smaller threshold voltage, $V_T=-6.8\;V$, compared with the transistor with hybrid gate-dielectric.

Width Control in the Photo patterning of PDP Barrier Ribs

  • Kim, Dong-Ju;Kim, Soon-Hak;Hur, Young-June;Kim, Duck-Gon;Lee, Sam-Jong;Jung, Sang-Kwon;Kim, Myeug-Chan;Park, Lee-Soon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.910-912
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    • 2006
  • Barrier ribs in plasma display panels (PDPs) function to maintain the discharge space between the glass plates as well as to prevent optical cross-talking. The barrier ribs currently employed are typically $300{\mu}m$ pitch, $110{\sim}120{\mu}m$ in height, with upper and lower widths of $50{\mu}m$ and $80{\mu}m$, respectively. It has been reported that barrier ribs can be fabricated by screen-printing, sand blasting, etching and photolithographic processes. In this study, photosensitive barrier rib pastes were formulated and systematically evaluated in terms of photolithographic process variables such as printing, drying, UV exposure, development and sintering. It was found that the use of UV absorbent, polymerization inhibitor and surfactant were very effective in controlling the width uniformity of barrier ribs in the photolithographic method of barrier rib patterning.

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Role of gas flow rate during etching of hard-mask layer to extreme ultra-violet resist in dual-frequency capacitively coupled plasmas

  • Gwon, Bong-Su;Lee, Jeong-Hun;Lee, Nae-Eung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.132-132
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    • 2010
  • In the nano-scale Si processing, patterning processes based on multilevel resist structures becoming more critical due to continuously decreasing resist thickness and feature size. In particular, highly selective etching of the first dielectric layer with resist patterns are great importance. In this work, process window for the infinitely high etch selectivity of silicon oxynitride (SiON) layers and silicon nitride (Si3N4) with EUV resist was investigated during etching of SiON/EUV resist and Si3N4/EUV resist in a CH2F2/N2/Ar dual-frequency superimposed capacitive coupled plasma (DFS-CCP) by varying the process parameters, such as the CH2F2 and N2 flow ratio and low-frequency source power (PLF). It was found that the CH2F2/N2 flow ratio was found to play a critical role in determining the process window for ultra high etch selectivity, due to the differences in change of the degree of polymerization on SiON, Si3N4, and EUV resist. Control of N2 flow ratio gave the possibility of obtaining the ultra high etch selectivity by keeping the steady-state hydrofluorocarbon layer thickness thin on the SiON and Si3N4 surface due to effective formation of HCN etch by-products and, in turn, in continuous SiON and Si3N4 etching, while the hydrofluorocarbon layer is deposited on the EUV resist surface.

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Studies on the Organization of 10-nm Filament Ring in Saccharomyces cerevisiae (Saccharomyces cerevisiae 의 10-nm Filament Ring 의 생성기작에 대한 연구)

  • 김성철;정재욱;김형배
    • Korean Journal of Microbiology
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    • v.30 no.5
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    • pp.333-338
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    • 1992
  • Saccharomyces cerevisiae contains 10-nm tilament ring which lies just under the inner surface of the plasma membrane within the mother-bud neck. Although H)-nm filaments may he involved in cellular morphogenesis. their role and organization are not clear. Here we report the production of antihodies specific for the CDel2 protein hy use of gene fusion techniques. and studies on the organization and function of IO-nm filaments using these antibodies. The CDCl2 protein arc translated through the whtlle cell cycle and present in the cytosol. 'They are polymerized just before bud emergence and unpolymerized alier cytokinesis. and do not have organizational relationship with actin. Thc possible role of 10-nm filaments is the determination of bud emergence site and completion of cytokinesis.

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Preparation of Affinity Column Based on ZR4+ Ion forPhosphoproteins Isolation

  • Lee, Seon-Mi;Bae, In-Ae;Park, Jung-Hyen;Kim, Tae-Dong;Choi, Seong-Ho
    • Journal of the Korean Chemical Society
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    • v.53 no.3
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    • pp.279-285
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    • 2009
  • This paper has described about preparation of $Zr^{4+}$ affinity column based on the poly(styrene-co- gly-cidyl methacrylate) prepared by emulsion polymerization of styrene and glycidyl methacrylate in order to isolate phosphopeptide. The $Zr^{4+}$ ions were introduced after the phophonation of an epoxy group on polymeric microspheres. The successful preparation of $Zr^{4+}$-immobilized polymeric microsphere stationary phase was confirmed through Fourier transform infrared spectra, optical microscopy, scanning electron microscopy, X-ray photoelectron spectra and inductively coupled plasma-atomic emission spectrometer. The separation efficiency for $Zr^{4+}$ affinity column prepared by slurry packing was tested to phosphonated casein and dephosphonated casein. The resolution time (min) of the phosphonated casein was higher than that of dephosphated casein for $Zr^{4+}$ affinity polymeric microsphere by liquid chromatography. This $Zr^{4+}$ affinity column can be used for isolation of phosphonated casein from casein using liquid chromatography.

Anti-corrosion Properties of SiOxCy(-H) thin Films Synthesized and Oxidized by Atmospheric Pressure Dielectric Barrier Discharge (대기압 유전체배리어방전으로 합성 및 산화 처리된 SiOxCy(-H) 박막의 부식방지 특성)

  • Kim, Gi-Taek;Kim, Yoon Kee
    • Journal of the Korean institute of surface engineering
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    • v.53 no.5
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    • pp.201-206
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    • 2020
  • A SiOxCy(-H) thin film was synthesized by atmospheric pressure dielectric barrier discharge(APDBD), and a SiO2-like layer was formed on the surface of the film by oxidation treatment using oxygen plasma. Hexamethylcyclotrisiloxane was used as a precursor for the SiOxCy(-H) synthesis, and He gas was used for stabilizing APDBD. Oxygen permeability was evaluated by forming an oxidized SiOxCy(-H) thin film on a PET film. When the single-layer oxidized SiOxCy(-H) film was coated on the PET, the oxygen gas permeability decreased by 46% compared with bare PET. In case of three-layer oxidized SiOxCy(-H) film, the oxygen gas permeability decreased by 73%. The oxygen permeability was affected by the thickness of the SiO2-like layer formed by oxidation treatment rather than the thickness of the SiOxCy(-H) film. The excellent corrosion resistance was demonstrated by coating an oxidized SiOxCy(-H) thin film on the silver-coated aluminum PCB for light emitting diode (LED).

Ultra Thin Film Encapsulation for Flexible OLED (플렉시블 유기 EL 소자를 위한 초박막 보호층)

  • Lim, J.S.;Shin, P.K.;Lim, K.B.;Song, J.H.;Kim, C.Y.;Lee, B.S.;Jeung, Y.S.;Lim, H.C.
    • Proceedings of the KIEE Conference
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    • 2006.07c
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    • pp.1412-1413
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    • 2006
  • In this research, an organic thin 13 passivation layer was newly adopted to prefect the organic layer from ambient moisture and oxygen. As the organic thin film passivation layer, poly methyl methacrylate thin films (ppMMA) were deposited using a plasma polymerization technique. In order to their passivation performance for OLEDs, water vapor transmission rate (WVTR) of the ppMMAs were analyzed and luminance-current-voltage (L-I-V)/luminance-time (L-T) characteristics of the OLEDs with and without ppMMA passivation layer were investigated. The OLEDs had a structure of ITO/TPD (HTL)/Alq3(EML&ETL)/Al. The OLED with ppMMA passivation layer showed improved L-T performance than that of without ppMMA passivation layer.

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INFLUENCE OF TIP DISTANCE ON DEGREE OF CONVERSION OF COMPOSITE RESIN IN CURING WITH VARIOUS LIGHT SOURCES (광원에 따른 조사거리의 증가가 복합레진의 중합도에 미치는 영향)

  • Kim, Sang-Bae;Park, Ho-Won
    • Journal of the korean academy of Pediatric Dentistry
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    • v.31 no.2
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    • pp.273-279
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    • 2004
  • Recently, newly developed single high-intensity LED curing lights for composite resins are claimed to have a higher intensity than previous LED curing lights and to results in optimal properties and short curing time. The purpose of this study was to determine the curing effectiveness of the curing units and to evaluate the relationship between the degree of polymerization and distance from curing light tip end to resin surface. One composite resin was tested(Filtek Z250). Thin film specimens were cured with a LED curing unit(Elipar Freelight 2, 10s), Plasma Arc curing unit(Flipo, 6s), Halogen curing light(XL3000, 20s) at four curing light tip to the resin surface(0mm, 2mm, 4mm, 6mm). Degree of conversion of composite resins were determined by a Fourier Transform Infrared Spectrometer(FTIR). From the present study, the following results were obtained. 1. In all curing units, relative light intensity was significantly decreased according to the increase of distance of light tip to the resin surface(p<0.05). LED curing units showed a higher percentile decrease in intensity than other curing units. 2. In all curing units, degree of conversion was decreased as increase of the distance but no statistically significant difference(p>0.05) except between 4mm and 6mm(p<0.05). 3. When comparing degree of conversion of light curing units at each distance(0mm, 2mm, 4mm, 6mm), LED curing light had a higher degree of conversion than plasma arc and halogen curing lights at 0, 2, 4mm(p<0.05). At 6mm, there was a no significant difference among the curing units(p>0.05).

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