• 동굴
• /
• 제78호
• /
• pp.29-31
• /
• 2007

This paper is devoted to a study of the characterization of the plasma state. For the purpose of monitoring plasma condition, we experiment on reactive ion etching (RIE) process. Without actual etch process, generated oxygen plasma, measurement of plasma emission intensity. Changing plasma process parameters, oxygen flow, RF power and chamber pressure have controlled. Using the optical emission spectroscopy (OES), we conform to the unique oxygen wavelength (777nm), the most powerful intensity region of the designated range. Increase of RF power and chamber pressure, emission intensity is increased. oxygen flow is not affect to emission intensity.

• 한국정밀공학회지
• /
• 제30권1호
• /
• pp.67-76
• /
• 2013

We present an innovative real-time laser welding monitoring technique employing the correlation analysis of the plasma plume optical emission generated during the process. The plasma optical radiation emitted during Nd:YAG laser welding of S45C steel samples has detected with a Photodiode and analyzed under different process conditions. The discrete DC voltage difference, filter methods and wavelet transform has been used to decompose the optical signal into various discrete series of sequences over different frequency bands. Considering that wavelet analysis can decompose the optical signals, extract the characteristic information of the signals and define the defects location accurately, it can be used to implement process-control of laser welding.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 1996년도 추계학술대회 논문집
• /
• pp.474-478
• /
• 1996

Process monitoring in laser welding is essential for automation and quality control of products. Various signals from laser welding, such as plasma, sound, optical signals, etc., are utilized for monitoring the process and detecting abnormal weld conditions. In this study, both W light from plasma formed above the weld pool and IR signal from the melting pool are detected with photodiodes and PC-based A/D board, and analyzed to give a guidance about the weld quality. Experimental results show the possibility of using the signals for predicting and evaluating the weld qualify and adapting into the system for on-line process monitoring.

• 반도체디스플레이기술학회지
• /
• 제20권3호
• /
• pp.27-31
• /
• 2021

VI probe, which is one of various in-situ plasma monitoring sensor, is frequently used for in-situ process monitoring in mass production environment. In this paper, we correlated the plasma etch results with VI probe data with the small amount of gas flow rate changes to propose usefulness of the VI probe in real-time process monitoring. Several different sized contact holes were employed for the etch experiment, and the etched profiles were measured by scanning electron microscope (SEM). Although the shape of etched hole did not show satisfactory relationship with VI probe data, the chamber status changed along the incremental/decremental modification of the amount of gas flow was successfully observed in terms of impedance monitoring.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
• /
• pp.142.2-142.2
• /
• 2015

Plasma etch endpoint detection (EPD) of SiO2 and PR layer is demonstrated by plasma impedance monitoring in this work. Plasma etching process is the core process for making fine pattern devices in semiconductor fabrication, and the etching endpoint detection is one of the essential FDC (Fault Detection and Classification) for yield management and mass production. In general, Optical emission spectrocopy (OES) has been used to detect endpoint because OES can be a simple, non-invasive and real-time plasma monitoring tool. In OES, the trend of a few sensitive wavelengths is traced. However, in case of small-open area etch endpoint detection (ex. contact etch), it is at the boundary of the detection limit because of weak signal intensities of reaction reactants and products. Furthemore, the various materials covering the wafer such as photoresist (PR), dielectric materials, and metals make the analysis of OES signals complicated. In this study, full spectra of optical emission signals were collected and the data were analyzed by a data-mining approach, modified K-means cluster analysis. The K-means cluster analysis is modified suitably to analyze a thousand of wavelength variables from OES. This technique can improve the sensitivity of EPD for small area oxide layer etching processes: about 1.0 % oxide area. This technique is expected to be applied to various plasma monitoring applications including fault detections as well as EPD.

• Journal of Welding and Joining
• /
• 제28권6호
• /
• pp.51-57
• /
• 2010

Fiber laser is a heat source which is introduced recently, and so has a little researched data compare with conventional laser processing. Moreover basic data for welding monitoring are also insufficient. Therefore, in this study, the change of signal with measuring position and angle of plasma emission signals were analysed as a basic experiment for real time monitoring in fiber laser welding. As a result, the signals measured from the side, front and rear had the biggest intensity at $60^{\circ}$, and frequency peak to reflect the behavior of keyhole and swing of plasma by shield gas was detected at $45{\sim}60^{\circ}$. However, both intensity of signal and the result of FFT for monitoring were satisfied at the angle of $45^{\circ}$ from the side.

• 대한용접접합학회:학술대회논문집
• /
• 대한용접접합학회 2010년도 춘계학술발표대회 초록집
• /
• pp.94-94
• /
• 2010

Fiber laser is a heat source which is introduced recently, and so has a little researched data compare with conventional laser processing. Moreover basic data for welding monitoring are also insufficient. Therefore, in this study, the change of signal with measuring position and angle of plasma emission signals were analysed as a basic experiment for real time monitoring in fiber laser welding. As a result, the signals measured from the side, front and rear had the biggest intensity at $60^{\circ}$, and frequency peak to reflect the behavior of keyhole and swing of plasma by shield gas was detected at $45{\sim}60^{\circ}$. However, both intensity of signal and the result of FFT for monitoring were satisfied at the angle of $45^{\circ}$ from the side.

• 한국생산제조학회지
• /
• 제21권5호
• /
• pp.814-823
• /
• 2012

Fluctuation of light intensity from the keyhole becomes more significant in full penetration welding than partial penetration welding, since the plasma produced in the keyhole can escape from the rear side of the keyhole. The plasma optical radiation emitted during Nd:YAG laser welding of S45C steel samples has been detected with a Photodiode and analyzed under different process conditions. As the results, the BOP was performed for welding, behavior of plasma, spatter or plume was monitored to determine the reference signal. Then, random combination was made for comparison with the reference signal, which aimed at verifying reliability of the welding monitoring system that this study intended to develop.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.185.2-185.2
• /
• 2016

The plasma density is an essential plasma parameter describing plasma physics. Furthermore, it affects the throughput and uniformity of plasma processing (etching, deposition, ashing, etc). Therefore, a novel technique for plasma density measurement has been attracting considerable attention. Microwave probe is a promising diagnostic technique. Various type of cutoff, hairpin, impedance, transmission, and absorption probes have been developed and investigated. Recently, based on the basic type of probes, modified flat probe (curling and multipole probes), have been developing for in situ processing plasma monitoring. There is a need for comparative study between the probes. It can give some hints on choosing the reliable probe and application of the probes. In this presentation, we make attempt of numerical study of different kinds of microwave probes. Characteristics of frequency spectrum from probes were analyzed by using three-dimensional electromagnetic simulation. The plasma density, obtained from the spectrum, was compared with simulation input plasma density. The different microwave probe behavior with changes of plasma density, sheath and pressure were found. To confirm the result experimentally, we performed the comparative experiment between cutoff and hairpin probes. The sheath and collision effects are corrected for each probe. The results were reasonably interpreted based on the above simulation.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2015년도 추계학술대회 논문집
• /
• pp.183-183
• /
• 2015

Arc in plasma processing chamber results in high current discharge marks and particles on wafers, but it is hard to identify or observe it during the proc ess. In this paper, we report the observations of plasma arc s during various plasma proc esses through a non-invasive optic al plasma monitoring system (OPMS) devised for the in-situ detec tion of abnormal discharge.