• Journal of Nutrition and Health
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• v.31 no.8
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• pp.1235-1243
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• 1998

Although an elevated plasma level of high density lipoprotein (HDL) is known as a protective component against the development of atherosclerosis and ensuing coronary heart diseases, the related mechanisms are still not established . It has been clearly demonstrated in the early stages of atherogenesis that adhesion of monocytes and lymphocytes to the vascular endothelium is enhanced via adhesion molecules, and that monocytes and macrophages accumulate in the subendothelial space. The present study has investigated whether isolated plasma HDL plays a role in protection against atherogenesis by inhibiting the expression of vascular cell adhesioin molecule-1(VCAM-1) on the endothelial cells. Effects of plasma native low density lipoprotein (LDL) and ac ethylated LDL(AcLDL) on VCAM-1 expression were also examined by using an immunocytochemical technique. While plasma HDL did not alter the basal expression of VCAM-1 , lipopolysaccharide(LPS) induction of this adhesion modlecule was markedly inhibited at a phyaiological concentration of HDL. In contrast, 30$\mu\textrm{g}$ protein/ml AcLDL increased sifnificantly both basal VCAM-1 expression and its LPD induction , suggesting that this modified LDL enhances leukocyte adhesiion to endothelial cells. Unlike AcLDL , plasma native LDL inhibited significantly VCAM-1 expression. This indicates that LDL did not undergo oxidative modificantion while incubated with endothelial cells. These results suggest that plasam HDL may inhibit atherogenesis by reducing the expression of adhesion molecules, which is a protective mechanism independent of tis reverse cholesterol transport function . Modified LDL is a potent iducer for adhesion molecules in vascular endothelical cells and could play a role in the pathogenesis of atherosclerosis by adhering to blood cells.

• Membrane and Water Treatment
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• v.1 no.1
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• pp.83-92
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• 2010

To improve the antifouling characteristics of polypropylene hollow fiber microporous membranes in a submerged membrane-bioreactor for wastewater treatment, the surface-modification was conducted by Ar plasma treatment. Surface hydrophilicity was assessed by water contact angle measurements. The advancing and receding water contact angles reduced after the surface modification, and hysteresis between the advancing and receding water contact angles was enlarged after Ar plasma treatment due to the increased surface roughness after surface plasma treatment. After continuous operation in a submerged membrane-bioreactor for about 55 h, the flux recovery after water cleaning and the flux ratio after fouling were improved by 20.0 and 143.0%, while the reduction of flux was reduced by 28.6% for the surface modified membrane after 1 min Ar plasma treatment, compared to those of the unmodified membrane. Morphological observations showed that the mean membrane pore size after Ar plasma treatment reduced as a result of the deposition of the etched species; after it was used in the submerged membrane-bioreactor, the further decline of the mean membrane pore size was caused by the deposition of foulants. X-ray photoelectron spectroscopy and infrared spectroscopy confirmed that proteins and polysaccharide-like substances were the main foulants in the precipitate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.131-134
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• 1998

This work was carried out to develop a pattern on the nanometer scale using plasma polymerization and plasma etching. This study is also aimed at developing a resist for the nano process and a vacuum lithography process. The thin films of plasma polymerization were fabricated by the plasma po1ymerization of inter-electrode capacitively coupled gas flow system. After delineating the pattern at accelerating voltage of 30[kV]. ranging the dose of 1∼500[${\mu}$C/$\textrm{cm}^2$], the pattern was developed with dry tree and formed by plasma etching. By analysing of the molecule structure using FT-lR, it was confirmed that the thin films of PPMST contains the functional radicals of the MST monomer. The thin films of PPMST had a highly crosslinked structure resulting in a higher molecule weight than the conventional resist.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.510-515
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• 2001

It was first time that low frequency R.F. derived plasma enhanced MOCVD with frimethylborate precursor was used to fabricate a new ternary compound $BO_{x}$ $N_{y}$ . The formation of BON molecule was resulted from nitrogen nitrifying B-O, and forming the angular molecule structure proved by XPS and FT-IR results. The relationship between hardness and film thickness was studied. An thickness-independent hardness was fond about 10 GPa. The empirical calculation of band-gap and UV test result showed that our deposited $BO_{x}$ $N_{y}$ thin film was semiconductor material with 3.4eV of wide band gap. The electrical conductivity, $4.8$\times$10^{-2}$ /($\Omega$.cm)$^{-1}$ also confirmed that $BO_{x}$ $N_{y}$ has a semiconductor property. The roughness detected from the as-grown films showed that there was no serious bombarding effect due to anion in the plasma occurring in the RF frequency derived plasma.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.74-74
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• 2010

The aqua-plasma is the non-thermal plasma in electrical conductive electrolyte by generates the vapor film layer on the immersed metal electrode surface. This plasma can generate the hydroxyl radical by dissociate the water molecule with the plasma electron. To develop the plasma discharge device for high efficiency in the hydroxyl radical generation, proper model for estimation of plasma power is necessary. In this work, the 1-D spherical model was developed, considering temperature dependence material constants. The relation between the plasma power and hydroxyl generation was also studied by the comparison between the optical emission intensity from the hydroxyl radical using monochromator and estimated plasma power. First, the thickness of vapor layer thickness was estimated using the Navier-Stokes fluid equation in order to calculate the discharge E-field inside vapor layer. Using the E-field magnitude and power balance on the plasma generation, it was possible to estimate the plasma power. The plasma power was assumed to uniformly fill the vapor layer and the temperature of vapor layer was fixed in the boiling temperature of electrolyte, 375K. In the experiment, the aqua-plasma was discharged in the saline by applied the voltage on the bipolar electrode. The range of applied voltage was 234 to 280V-rms in the frequency of 380 kHz. Two type electrodes were produced with two ${\Phi}0.2$ tungsten. The plasma power was estimated from the V-I signal from the two high voltage probes and current probe. The estimated plasma power agreed with the profile of emission intensity when the plasma discharged between the metal electrode and vapor layer surface. However, when the plasma discharged between the metal electrodes, the increasing rate of emission intensity was lower than the increase of plasma power. It implies that the surface reaction is more sufficient rather than the volume reaction in the radical generation, due to the high density of water molecule in the liquid.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2004.03a
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• pp.327-334
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• 2004

Spectroscopic and electrostatic probe measurements were made to examine plasma characteristics with or without a metal plate for a 10-㎾-class direct-current arcjet Heat fluxes into the plate from the plasma were also evaluated with a Nickel slug and thermocouple arrangement. Ammonia and mixtures of nitrogen and hydrogen were used. The NH$_3$ and $N_2$+3H$_2$ plasmas in the nozzle and in the downstream plume without a plate were in thermodynamical nonequilibrium states. As a result, the H-atom electronic excitation temperature and the $N_2$ molecule-rotational excitation temperature intensively decreased downstream in the nozzle although the NH molecule-rotational excitation temperature did not show an axial decrease. Each temperature was kept in a small range in the plume without a plate except for the NH rotational temperature for NH$_3$ gas. On the other hand, as approaching the plate, the thermodynamical nonequilibrium plasma came to be a temperature-equilibrium one because the plasma flow tended to stagnate in front of the plate. The electron temperature had a small radial variation near the plate. Both the electron number density and the heat flux decreased radially outward, and an increase in H$_2$ mole fraction raised them at a constant radial position. In cases with NH$_3$ and $N_2$+3H$_2$ a large number of NH radical with a radially wide distribution was considered to cause a large amount of energy loss, i.e., frozen flow loss, for arcjet thrusters.

• Proceedings of the Korean Nutrition Society Conference
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• 1999.05b
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• pp.80-80
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• 1999

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.363-363
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• 2008

The development of dry etching process for sapphire wafer with plasma has been key issues for the opto-electric devices. The challenges are increasing control and obtaining low plasma induced-damage because an unwanted scattering of radiation is caused by the spatial disorder of pattern and variation of surface roughness. The plasma-induced damages during plasma etching process can be classified as impurity contamination of residual etch products or bonding disruption in lattice due to charged particle bombardment. Therefor, fine pattern technology with low damaged etching process and high etch rate are urgently needed. Until now, there are a lot of reports on the etching of sapphire wafer with using $Cl_2$/Ar, $BCl_3$/Ar, HBr/Ar and so on [1]. However, the etch behavior of sapphire wafer have investigated with variation of only one parameter while other parameters are fixed. In this study, we investigated the effect of pressure and other parameters on the etch rate and the selectivity. We selected $BCl_3$ as an etch ant because $BCl_3$ plasmas are widely used in etching process of oxide materials. In plasma, the $BCl_3$ molecule can be dissociated into B radical, $B^+$ ion, Cl radical and $Cl^+$ ion. However, the $BCl_3$ molecule can be dissociated into B radical or $B^+$ ion easier than Cl radical or $Cl^+$ ion. First, we evaluated the etch behaviors of sapphire wafer in $BCl_3$/additive gases (Ar, $N_2,Cl_2$) gases. The behavior of etch rate of sapphire substrate was monitored as a function of additive gas ratio to $BCl_3$ based plasma, total flow rate, r.f. power, d.c. bias under different pressures of 5 mTorr, 10 mTorr, 20 mTorr and 30 mTorr. The etch rates of sapphire wafer, $SiO_2$ and PR were measured with using alpha step surface profiler. In order to understand the changes of radicals, volume density of Cl, B radical and BCl molecule were investigated with optical emission spectroscopy (OES). The chemical states of $Al_2O_3$ thin films were studied with energy dispersive X-ray (EDX) and depth profile anlysis of auger electron spectroscopy (AES). The enhancement of sapphire substrate can be explained by the reactive ion etching mechanism with the competition of the formation of volatile $AlCl_3$, $Al_2Cl_6$ or $BOCl_3$ and the sputter effect by energetic ions.

• Journal of the Korean Physical Society
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• v.73 no.12
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• pp.1855-1862
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• 2018

A reliable set of low-energy electron collision cross sections for the triethoxysilane (TRIES) molecule was derived based on the measured electron transport coefficients for a pure TRIES molecule by using an electron swarm method and a two-term approximation of the Boltzmann equation. The electron transport coefficients calculated using the derived set are in good agreement with experimental value over a wide range of E/N values (ratio of the electric field E to the neutral number density N). The present electron collision cross section set for the TRIES molecule, therefore, is the most reliable so far for plasma discharges and for materials processing using the TRIES molecule. Moreover, the electron transport coefficients for the TRIES-Ar and the $TRIES-O_2$ mixtures were also calculated and analyzed over a wide range of E/N for the first time.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.34-34
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• 2010

Absolute electron-impact cross sections for molecular targets including their radicals are important in developing plasma reactors and testing various plasma processing gases. However, low-energy electron collision data for these gases are sparse and only the limited cross section data are available. In this presentation, the methods and the status of measurements of, mainly, absolute elastic cross sections for electron-polyatomic molecule collisions will be discussed with recent results from Chungnam National University. Elastic cross sections are essential for the absolute scale conversion of inelastic cross sections, as well as for testing computational methods.